C460UB290-S0101 [CREE]
Visible LED;
| 型号： | C460UB290-S0101 |
| 厂家： | 
CREE, INC |
| 描述： | Visible LED |
| 文件： | 总5页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
•
G SiC Technology
UltraBright™ LEDs
CXXX-UB29X-S0100
®
The Leader in Silicon Carbide Solid State Technology
Features
Applications
• UltraBright™ Performance
• LED Video Displays
– 3.8mW min (460nm) Deep Blue
– 3.4mW min (470nm) Blue
• White LEDs
– 2.5mW min (505nm) Signal Green
– 1.7mW min (527nm) Green
• Automotive Dashboard Lighting
• Cellular Phone Backlighting
• Audio Product Display Lighting
• Sorted to Wavelength and Power Bins
• Single Wire Bond Structure
• Class II ESD Rating
Description
Cree's UB™ series of UltraBright™ LEDs combine highly efficient InGaN materials with Cree's
proprietary SiC® substrate to deliver excellent price performance for high intensity blue and green LEDs.
UltraBright LED chips are available in a geometrically enhanced vertical structure or a straight-wall
design for use in reflector-less applications such as ChipLEDs. Both require only a single wire bond
connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant flux bins.
Cree's UB series chips are individually tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as
outdoor and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also be
used in high volume applications such as LCD backlighting. Cree's CB series chips are compatible with
most radial and SMT LED assembly processes.
CXXX-UB29X-S0100 Chip Diagram
Die Cross Section (UB290)
Straight-wall design (UB291)
Topside View
G·SiC ® LED Chip
300 x 300 µm
Anode (+)
h = 250 µm
Cathode (-)
InGaN
InGaN
Mesa (junction)
240 x 240 µm
SiC Substrate
SiC Substrate
Backside
Metallization
Gold Bond Pad
114 µm Diameter
CPR3AG Rev. E
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CXXX-UB29X-S0100
®
The Leader in Silicon Carbide Solid State Technology
Maximum Ratings at TA = 25°C Notes 1&3
CXXX-UB29X-S0100
30 mA
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
-20°C to +80°C
-30°C to +100°C
1000 V
Storage Temperature Range
Electrostatic Discharge Threshold (HBM) Note 2
Electrostatic Discharge Classification (MIL-STD-883E) Note 2
Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3
Forward Voltage
(Vf, V)
Reverse Current
[I(Vr=5V), µA]
Peak Wavelength
Halfwidth
(λD, nm)
Optical Rise Time
Part Number
(λp, nm)
(τ, ns)
Typ
Max
Max
Typ
Typ
Typ
C460UB29X-S0100
C470UB29X-S0100
C505UB29X-S0100
C527UB29X-S0100
3.5
3.5
3.5
3.5
3.9
3.9
3.9
3.9
10
10
10
10
458
468
502
518
26
26
30
36
30
30
30
30
Mechanical Specifications Note 4
Description
CXXX-UB29X-S0100
Dimension
240 x 240
300 x 300
200 x 200
300 x 300
250
Tolerance
± 25
P-N Junction Area (µm)
Top Area (µm)
± 25
UB290 Bottom Area (µm)
UB291 Bottom Area (µm)
Chip Thickness (µm)
± 25
± 25
± 25
Au Bond Pad Diameter (µm)
Au Bond Pad Thickness (µm)
114
± 20
1.2
± 0.5
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization.
Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to
determine limitations. Assembly processing temperature must not exceed 350°C (< 15 minutes).
2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The
RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of
Class II is based on sample testing according to MIL-STD 883E.
3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA
within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the
manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000
epoxy). Optical characteristics were measured in a Photoresearch Spectrascan Integrating Sphere. Illuminance E.
4) Specifications are subject to change without notice.
CPR3AG Rev. E
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CXXX-UB29X-S0100
®
The Leader in Silicon Carbide Solid State Technology
Standard Bins for UB290:
All LED chips are sorted onto die sheets according to the bins shown below.
8.0mW
460UB290-0103
460UB290-0101
460UB290-0104
460UB290-0102
C460UB290-S0100
6.0mW
Sorted Die Kits may contain any or all
bins shown to the left.
3.8mW
455nm
460nm
465nm
475nm
510nm
7.5mW
5.5mW
3.4mW
470UB290-0103
470UB290-0101
470UB290-0104
470UB290-0102
C470UB290-S0100
465nm
470nm
6.0mW
4.0mW
2.5mW
505UB290-0103
505UB290-0101
505UB290-0104
505UB290-0102
C505UB290-S0100
C527UB290-S0100
500nm
505nm
5.0mW
3.5mW
1.7mW
527UB290-0104
527UB290-0101
527UB290-0105
527UB290-0102
527UB290-0106
527UB290-0103
520nm
525nm
530nm
535nm
CPR3AG Rev. E
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CXXX-UB29X-S0100
®
The Leader in Silicon Carbide Solid State Technology
Standard Bins for UB291:
All LED chips are sorted onto die sheets according to the bins shown below.
11.0mW
460UB291-0105
460UB291-0103
460UB291-0101
460UB291-0106
460UB291-0104
460UB291-0102
8.0mW
6.0mW
3.8mW
C460UB291-S0100
Sorted Die Kits may contain any or all
bins shown to the left.
455nm
460nm
465nm
10.0mW
7.5mW
5.5mW
3.4mW
470UB291-0107
470UB291-0105
470UB291-0101
470UB291-0108
470UB291-0106
470UB291-0103
C470UB291-S0100
465nm
470nm
475nm
6.0mW
4.0mW
2.5mW
505UB291-0103
505UB291-0101
505UB291-0104
505UB291-0102
C505UB291-S0100
C527UB291-S0100
500nm
505nm
510nm
5.0mW
3.5mW
1.7mW
527UB291-0104
527UB291-0101
527UB291-0105
527UB291-0102
527UB291-0106
527UB291-0103
520nm
525nm
530nm
535nm
CPR3AG Rev. E
© 2000-2003 Cree, Inc. All Rights Reserved.
®
•
G SiC Technology
UltraBright™ LEDs
CXXX-UB29X-S0100
®
The Leader in Silicon Carbide Solid State Technology
Characteristic Curves
Wavelength Shift vs Forward Current - All Products
Relative Intensity vs Forward Current - All Products
16.0
14.0
12.0
10.0
8.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
6.0
4.0
2.0
527nm
505nm
470nm
0.0
-2.0
-4.0
0
5
10
15
20
25
30
0
5
10
15
If (mA)
20
25
30
If (mA)
Forward Current vs Forward Voltage - All Products
Relative Intensity vs Wavelength - All Products
30
25
20
15
10
5
100%
80%
60%
40%
20%
0%
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
500
Vf (V)
Wavelength (nm)
CPR3AG Rev. E
© 2000-2003 Cree, Inc. All Rights Reserved.
相关型号：
©2020 ICPDF网 联系我们和版权申明