C4D05120E_15 [CREE]

Silicon Carbide Schottky Diode;


型号：	C4D05120E_15
厂家：	CREE, INC
描述：	Silicon Carbide Schottky Diode
文件：	总6页 (文件大小：894K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

C4D05120E

V_RRMꢀꢀꢀꢀꢀꢀ=ꢀꢀ ꢀ1200ꢀVꢀ

I_F(T_C=135˚C) =ꢀꢀꢀ9ꢀA

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ ꢀꢀꢀ27ꢀnC

Silicon Carbide Schottky Diode

Z-Rec^®RectifieR

Features

Package

•ꢀ 1.2kVꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

Beneﬁts

ꢀꢀꢀꢀꢀTO-252-2ꢀ ꢀꢀꢀꢀꢀꢀꢀ

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ SolarꢀInvertersꢀ

C4D05120E

TO-252-2

C4D05120

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ LEDꢀLightingꢀPowerꢀSupplies

•ꢀ EVꢀChargingꢀandꢀPowerꢀConversion

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol Parameter

Value

1200

1300

1200

Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

T_C=25˚C

T_C=135˚C

T_C=160˚C

I_F

ContinuousꢀForwardꢀCurrentꢀꢀꢀꢀꢀꢀꢀ

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

I_FRM

I_FSM

I_F,Max

P_tot

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

400

320

T_C=25˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀPulse

T_C=25˚C

T_C=110˚C

˚C

-55ꢀtoꢀ

+175

T_J

OperatingꢀJunctionꢀRange

-55ꢀtoꢀ

+135

T_stg

StorageꢀTemperatureꢀRange

C4D05120E Rev. D

Electrical Characteristics

Symbol Parameter

Typ.

Max.

Unit

Test Conditions

I_Fꢀ=ꢀ5ꢀAꢀꢀT_J=25°C

Note

1.4

1.9

1.8

V_F

ForwardꢀVoltage

ReverseꢀCurrent

I_Fꢀ=ꢀ5ꢀAꢀꢀT_J=175°C

150

300

V_Rꢀ=ꢀ1200ꢀVꢀꢀT_J=25°C

V_Rꢀ=ꢀ1200ꢀVꢀꢀT_J=175°C

I_R

μA

V_Rꢀ=ꢀ800ꢀV,ꢀI_Fꢀ=ꢀ5A

di/dtꢀ=ꢀ200ꢀA/μs

T_Jꢀ=ꢀ25°C

Q_C

TotalꢀCapacitiveꢀCharge

390

V_Rꢀ=ꢀ0ꢀV,ꢀT_Jꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz

V_Rꢀ=ꢀ400ꢀV,ꢀT_Jꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz

V_Rꢀ=ꢀ800ꢀV,ꢀT_Jꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz

TotalꢀCapacitance

E_C

CapacitanceꢀStoredꢀEnergy

8.0

μJ

V_Rꢀ=ꢀ800ꢀV

Fig. 7

Note:

1. Thisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.

Thermal Characteristics

Symbol Parameter

Typ.

1.55

Unit

R_θJC

TO-252ꢀPackageꢀThermalꢀResistanceꢀfromꢀJunctionꢀtoꢀCase

°C/W

Typical Performance

1000

900

800

700

600

500

400

300

200

100

T_J=-55°C

T_J=ꢀ25°C

T_J=ꢀ75°C

T_Jꢀ=125°C

T_Jꢀ=175°C

T_J=-55°C

T_J=ꢀ25°C

T_J=ꢀ75°C

T_Jꢀ=125°C

T_Jꢀ=175°C

0.5

1.5

2.5

3.5

4.5

500

1000

1500

2000

V_R(V)

V_F(V)

Voltage (V)

Figureꢀ1.ꢀForwardꢀCharacteristics

Figureꢀ2.ꢀReverseꢀCharacteristics

C4D05120E Rev. D

Typical Performance

100

10%ꢀDuty

ꢀꢀ20%ꢀDuty

ꢀꢀ30%ꢀDuty

ꢀꢀ50%ꢀDuty

ꢀꢀ70%ꢀDuty

ꢀꢀDC

100

125

150

175

100

125

150

175

T_C˚C

Figureꢀ3.ꢀCurrentꢀDerating

Figureꢀ4.ꢀPowerꢀDerating

450

400

350

300

250

200

150

100

200

400

600

800

1000

0.01

0.1

100

1000

V_R(V)

ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ

ꢀ

Figureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage

C4D05120E Rev. D

Typical Performance

14.0

1000

12.0

10.0

8.0

100

6.0

T_J=ꢀ25°C

T_Jꢀ=ꢀ110°C

4.0

2.0

1.E-05

0.0

ꢀꢀꢀ0₀ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000

ꢀꢀꢀ1E-05ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-04ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-03ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-02

200

400

600

800

1000

1.E-04

1.E-03

1.E-02

V_R

^RV^eve_R^rse(^VV^ol)^{tage (V)}

t (s)

_ptp(s)

Figureꢀ8.ꢀNon-repetitiveꢀpeakꢀforwardꢀsurgeꢀcurrentꢀ

versusꢀpulseꢀdurationꢀ(sinusoidalꢀwaveform)

Figureꢀ7.ꢀTypicalꢀCapacitanceꢀStoredꢀEnergy

0.5

0.3

0.1

0.05

100E-3

0.02

SinglePulse

0.01

10E-3

1E-3

1E-6

10E-6

100E-6

1E-3

10E-3

100E-3

T (Sec)

Figureꢀ9.ꢀTransientꢀThermalꢀImpedance

C4D05120E Rev. D

Package Dimensions

PackageꢀTO-252-2

Recommended Solder Pad Layout

Part Number

Package

Marking

C4D05120E

TO-252-2

C4D05120

TO-252-2

Note: Recommended soldering proﬁles can be found in the applications note here:

http://www.cree.com/power_app_notes/soldering

C4D05120E Rev. D

Diode Model

Vf_T=V_T+ If *R_T

V_T= 0.96 + (T_j* -1.22*10^-3)

R_T= 0.08 + (T_j* 8.5*10^-4)

Note: T = Diode Junction Temperature in Degrees Celsius,

Note: T_J_jis diode junction temperature in degrees Celsius

valid from 25°C to 175°C

Notes

•ꢀ RoHSꢀCompliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred

to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance

with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can

be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.

•ꢀ REAChꢀCompliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-

cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable

future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.

REACh banned substance information (REACh Article 67) is also available upon request.

•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into

the human body nor in applications in which failure of the product could lead to death, personal injury or property

damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,

cardiacꢀdeﬁbrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ

systems,ꢀorꢀairꢀtrafﬁcꢀcontrolꢀsystems.

RelatedꢀLinks

•ꢀ Cree SiC Schottky diode portfolio: http://www.cree.com/diodes

•ꢀ C3D Spice models: http://response.cree.com/Request_Diode_model

•ꢀ SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

The information in this document is subject to change without notice.

Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.

Fax: +1.919.313.5451

www.cree.com/power

C4D05120E Rev. D

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