C4D20120D [CREE]
Silicon Carbide Schottky Diode;
| 型号： | C4D20120D |
| 厂家： | 
CREE, INC |
| 描述： | Silicon Carbide Schottky Diode |
| 文件： | 总6页 (文件大小：772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
C4D20120D
VRRM
=
1200 V
Silicon Carbide Schottky Diode
I (TC=135˚C) =ꢀꢀ33ꢀA**
F
Z-Rec® RectifieR
Qcꢀ ꢀꢀ ꢀꢀ=ꢀꢀꢀꢀꢀꢀ104ꢀnC**
Features
Package
•ꢀ 1.2-KVoltꢀSchottkyꢀRectifier
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent
•ꢀ High-FrequencyꢀOperation
•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior
•ꢀ PositiveꢀTemperatureꢀCoefficientꢀonꢀVF
Benefits
ꢀꢀꢀꢀꢀTO-247-3
•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectifiers
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses
•ꢀ HigherꢀEfficiency
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway
Applications
Part Number
Package
Marking
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ
•ꢀ PowerꢀFactorꢀCorrection
•ꢀ MotorꢀDrives
ꢀ
C4D20120D
TO-247-3
C4D20120
Maximum Ratings (TC=25°Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
RepetitiveꢀPeakꢀReverseꢀVoltage
SurgeꢀPeakꢀReverseꢀVoltage
DCꢀBlockingꢀVoltage
Value
1200
1300
1200
Test Conditions
Note
VRRM
V
V
V
VRSM
VDC
34/68
16.5/33
10/20
TC=25˚C
TC=135˚C
TC=157˚C
ContinuousꢀForwardꢀCurrentꢀ
(PerꢀLeg/Device)ꢀꢀꢀꢀꢀꢀꢀ
IF
A
47*
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
TC-110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
IFRM
IFSM
IF,Max
Ptot
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent
Non-RepetitiveꢀPeakꢀForwardꢀCurrent
PowerꢀDissipation(PerꢀLeg/Device)
OperatingꢀJunctionꢀRange
A
A
31.5*
71*
TC=25˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
TC=110˚C,ꢀtP=10ꢀms,ꢀHalfꢀSineꢀPulse
59.5*
750*
620*
TC=25˚C,ꢀtP=10 ms,ꢀPulse
TC=110˚C,ꢀtP=10 ms,ꢀPulse
A
176/352
76/152
TC=25˚C
TC=110˚C
W
˚C
˚C
-55 to
+175
TJ
-55 to
+135
Tstg
StorageꢀTemperatureꢀRange
1
8.8
Nm M3ꢀScrew
lbf-in 6-32ꢀScrew
TO-247ꢀMountingꢀTorque
*ꢀPerꢀLeg,ꢀ**ꢀPerꢀDevice
1
C4D20120D Rev. C
Electrical Characteristics (Per Leg)
Symbol Parameter
Typ.
Max.
Unit
V
Test Conditions
IF = 10 A TJ=25°C
Note
1.5
2.2
1.8
3
VF
ForwardꢀVoltage
ReverseꢀCurrent
IF = 10 A TJ=175°C
30
55
250
350
VR = 1200 V TJ=25°C
VR = 1200 V TJ=175°C
IR
μA
VRꢀ=ꢀ800ꢀV,ꢀIF = 10A
di/dtꢀ=ꢀ200ꢀA/μs
TJꢀ=ꢀ25°C
QC
TotalꢀCapacitiveꢀCharge
TotalꢀCapacitance
52
nC
pF
754
45
38
VRꢀ=ꢀ0ꢀV,ꢀTJꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ400ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
VRꢀ=ꢀ800ꢀV,ꢀTJꢀ=ꢀ25˚C,ꢀfꢀ=ꢀ1ꢀMHz
C
Note:
1. Thisꢀisꢀaꢀmajorityꢀcarrierꢀdiode,ꢀsoꢀthereꢀisꢀnoꢀreverseꢀrecoveryꢀcharge.
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
ThermalꢀResistanceꢀfromꢀJunctionꢀ
toꢀCase
0.85*
RθJC
°C/W
0.43**
*ꢀPerꢀLeg,ꢀ**ꢀPerꢀDevice
Typical Performance (Per Leg)
700
20
18
TJ=-55°C
TJ=ꢀ25°C
TJ=ꢀ75°C
TJꢀ=125°C
TJꢀ=175°C
60
0
16
500
14
12
400
10
300
8
TJ=-55°C
TJ=ꢀ25°C
TJ=ꢀ75°C
TJꢀ=125°C
TJꢀ=175°C
6
200
4
100
2
0
0
0
500
1000
1500
2000
ꢀꢀꢀꢀꢀ0ꢀ
ꢀꢀ0.5ꢀꢀꢀꢀꢀꢀꢀꢀ1ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1.5ꢀꢀꢀꢀꢀꢀꢀꢀ2ꢀꢀꢀꢀꢀꢀꢀꢀ2.5ꢀꢀꢀꢀꢀꢀꢀꢀ3ꢀꢀꢀꢀꢀꢀꢀꢀ3.5
2000
VF
(
V
)
VR(V)
Figureꢀ1.ꢀForwardꢀCharacteristics
Figureꢀ2.ꢀReverseꢀCharacteristics
2
C4D20120D Rev. C
Typical Performance (Per Leg)
200.0
180.0
160.0
140.0
120.0
100.0
80.0
10%ꢀDuty
ꢀꢀ20%ꢀDuty
ꢀꢀ30%ꢀDuty
ꢀꢀ50%ꢀDuty
ꢀꢀ70%ꢀDuty
ꢀꢀDC
60.0
40.0
20.0
0.0
25
50
75
100
125
150
175
TC˚C
TC ˚C
Figureꢀ3.ꢀCurrentꢀDerating
Figureꢀ4.ꢀPowerꢀDerating
800
700
600
500
400
300
200
100
0
70
60
50
40
30
20
10
0
0
200
400
600
800
1000
0.1
1
10
100
1000
VR (V)
VR (V)
ꢀꢀꢀꢀꢀꢀFigureꢀ5.ꢀRecoveryꢀChargeꢀvs.ꢀReverseꢀVoltageꢀ
ꢀ
ꢀ
Figureꢀ6.ꢀCapacitanceꢀvs.ꢀReverseꢀVoltage
3
C4D20120D Rev. C
Typical Performance
1000
25
20
15
100
TJ =ꢀ25°C
TJꢀ=ꢀ110°C
10
5
10
0
ꢀꢀꢀ0ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ200ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ400ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ600ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ800ꢀꢀꢀꢀꢀꢀꢀꢀꢀ1000
ꢀꢀꢀ1E-05ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-04ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-03ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ1E-02
2
tp (s)
VR (V)
Figureꢀ8.ꢀNon-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrentꢀ
versusꢀPulseꢀDurationꢀ(sinusoidalꢀwaveform)
Figureꢀ7.ꢀTypicalꢀCapacitanceꢀStoredꢀEnergy
1
0.1
0.01
0.001
0.0001
1E-6
10E-6
100E-6
1E-3
T (Sec)
10E-3
100E-3
1
10
Figureꢀ9.ꢀTransientꢀThermalꢀImpedance
4
C4D20120D Rev. C
Package Dimensions
Inches
Millimeters
Min
POS
Package TO-247-3
Min
.605
.800
.780
.095
.046
.060
Max
.635
.831
.800
.133
.052
.095
Max
16.130
21.10
20.320
3.380
1.321
2.410
A
B
15.367
20.320
19.810
2.413
C
X
Z
D
E
1.168
W
F
1.524
G
H
J
.215 TYP
.175
5.460 TYP
BB
.205
.085
21˚
6˚
4.450
1.910
6˚
5.210
2.160
21˚
.075
6˚
K
AA
L
4˚
4˚
6˚
M
N
P
2˚
4˚
2˚
4˚
CC
2˚
4˚
2˚
4˚
.090
.020
9˚
.100
.030
11˚
11˚
8˚
2.286
.508
9˚
2.540
.762
11˚
Q
R
S
9˚
9˚
11˚
T
2˚
2˚
8˚
U
V
2˚
8˚
2˚
8˚
.137
.210
.502
.637
.038
.110
.030
.161
.144
.248
.557
.695
.052
.140
.046
.176
3.487
5.334
12.751
16.180
0.964
2.794
0.766
4.100
3.658
6.300
14.150
17.653
1.321
3.556
1.168
4.472
W
X
Y
Z
AA
BB
CC
Recommended Solder Pad Layout
Part Number
Package
TO-247-3
Marking
C4D20120D
C4D20120
TO-247-3
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C4D20120D Rev. C
Diode Model
VfTꢀ= VT+If*RT
T =ꢀ0.98+(TJ*ꢀ-1.71*10-3)
V
T =ꢀ0.040+(TJ*ꢀ5.32*10-4)
R
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ
systems,ꢀorꢀairꢀtrafficꢀcontrolꢀsystems.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
6
C4D20120D Rev. C
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