C527RT320-0303 [CREE]

Reduced Forward Voltage 3.1 V Typical at 20 mA; 降低正向电压3.1 V(典型)在20mA
C527RT320-0303
型号: C527RT320-0303
厂家: CREE, INC    CREE, INC
描述:

Reduced Forward Voltage 3.1 V Typical at 20 mA
降低正向电压3.1 V(典型)在20mA

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中文:  中文翻译
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®
RazerThin Gen III LEDs  
CxxxRT320-Sxxxx  
Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials  
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green  
LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward  
voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.  
FEATURES  
APPLICATIONS  
Thin 95 μm Chip  
Reduced Forward Voltage  
3.1 V Typical at 20 mA  
RazerThin LED Performance  
LCD Backlighting Units  
Mobile Appliances  
Digital Still Cameras  
Monitors  
460 nm - 14 mW min.  
470 nm - 12 mW min.  
527 nm - 6 mW min.  
Cellular Phone LCD Backlighting  
Digital Camera Flash For Mobile Appliances  
Automotive Dashboard Lighting  
LED Video Displays  
Single Wire Bond Structure  
Class 2 ESD Rating  
Audio Product Display Lighting  
CxxxRT320-Sxxxx Chip Diagram  
Top View  
Die Cross Section  
Bottom View  
G•SiC LED Chip  
320 x 320 μm  
290 x 290 μm  
Anode (+)  
t = 95 μm  
Backside  
Metallization  
Gold Bond Pad  
112 μm Diameter  
Cathode (-)  
110 μm square  
Subject to change without notice.  
www.cree.com  
Maximum Ratings at TA = 25°CNotes ꢀ&3  
DC Forward Current  
CxxxRT320-Sxxxx  
50 mA  
Peak Forward Current (1/10 duty cycle @ 1kHz)  
LED Junction Temperature  
100 mA  
125°C  
Reverse Voltage  
5 V  
Operating Temperature Range  
Storage Temperature Range  
-40°C to +100°C  
-40°C to +100°C  
1000 V  
Note 2  
Electrostatic Discharge Threshold (HBM)  
Note 2  
Electrostatic Discharge Classification (MIL-STD-883E)  
Class 2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max.  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.1  
Max.  
Max.  
Typ.  
24  
C460RT320-Sxxxx  
C470RT320-Sxxxx  
C527RT320-Sxxxx  
2.7  
2.7  
2.7  
3.7  
3.7  
3.7  
1
1
1
3.1  
25  
3.2  
40  
Mechanical Specifications  
Description  
CxxxRT320-Sxxxx  
Dimension  
Tolerance  
± 35  
P-N Junction Area (μm)  
Top Area (μm)  
270 x 270  
320 x 320  
290 x 290  
95  
± 35  
Bottom Area (μm)  
± 35  
Chip Thickness (μm)  
± 15  
Au Bond Pad Diameter (μm)  
Au Bond Pad Thickness (μm)  
Back Contact Metal Width (μm)  
112  
± 20  
1.0  
± 0.5  
± 10  
110  
Notes:  
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)  
for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.  
The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the  
package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized  
in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).  
2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).  
The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding  
the ability of Products to withstand ESD.  
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled  
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given  
are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances  
products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol  
OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.  
4. Specifications are subject to change without notice.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
www.cree.com  
2
CPR3DU Rev. -  
Standard Bins for CxxxRT320-Sxx000  
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from  
only one bin. Sorted die kit (CxxxRT320-Sxx000) orders may be filled with any or all bins (CxxxRT320-xxxx) contained  
in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 20 mA.  
C460RT320-Sꢀ700  
C460RT320-0313  
C460RT320-0309  
C460RT320-0314  
C460RT320-0310  
C460RT320-0315  
C460RT320-0311  
C460RT320-0316  
C460RT320-0312  
20.0 mW  
17.0 mW  
455 nm  
457.5 nm  
460 nm  
462.5 nm  
465 nm  
Dominant Wavelength  
C460RT320-Sꢀ400  
C460RT320-0313  
C460RT320-0309  
C460RT320-0305  
C460RT320-0314  
C460RT320-0315  
C460RT320-0311  
C460RT320-0307  
C460RT320-0316  
C460RT320-0312  
C460RT320-0308  
20.0 mW  
17.0 mW  
14.0 mW  
C460RT320-0310  
C460RT320-0306  
455 nm  
457.5 nm  
460 nm  
Dominant Wavelength  
462.5 nm  
465 nm  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
3
CPR3DU Rev. -  
Standard Bins for CxxxRT320-Sxx000 (continued)  
C470RT320-Sꢀ700  
C470RT320-0313  
C470RT320-0309  
C470RT320-0314  
C470RT320-0310  
C470RT320-0315  
C470RT320-0311  
C470RT320-0316  
C470RT320-0312  
20.0 mW  
17.0 mW  
465 nm  
467.5 nm  
470 nm  
472.5 nm  
475 nm  
Dominant Wavelength  
C470RT320-Sꢀ400  
C470RT320-0313  
C470RT320-0309  
C470RT320-0305  
C470RT320-0314  
C470RT320-0315  
C470RT320-0311  
C470RT320-0307  
C470RT320-0316  
C470RT320-0312  
C470RT320-0308  
20.0 mW  
17.0 mW  
14.0 mW  
C470RT320-0310  
C470RT320-0306  
465 nm  
467.5 nm  
470 nm  
472.5 nm  
475 nm  
Dominant Wavelength  
C470RT320-Sꢀ200  
C470RT320-0313  
C470RT320-0309  
C470RT320-0305  
C470RT320-0301  
C470RT320-0314  
C470RT320-0315  
C470RT320-0311  
C470RT320-0307  
C470RT320-0303  
C470RT320-0316  
C470RT320-0312  
C470RT320-0308  
C470RT320-0304  
20.0 mW  
17.0 mW  
14.0 mW  
12.0 mW  
C470RT320-0310  
C470RT320-0306  
C470RT320-0302  
465 nm  
467.5 nm  
470 nm  
Dominant Wavelength  
472.5 nm  
475 nm  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.  
USA Tel: +1.919.313.5300  
www.cree.com  
4
CPR3DU Rev. -  
Standard Bins for CxxxRT320-Sxx000 (continued)  
C527RT320-S07500  
C527RT320-0307  
C527RT320-0304  
C527RT320-0308  
C527RT320-0305  
C527RT320-0309  
C527RT320-0306  
10.0 mW  
7.5 mW  
520 nm  
525 nm  
530 nm  
535 nm  
Dominant Wavelength  
C527RT320-S0500  
C527RT320-0307  
C527RT320-0304  
C527RT320-0301  
C527RT320-0308  
C527RT320-0309  
C527RT320-0306  
C527RT320-0303  
10.0 mW  
7.5 mW  
5.0 mW  
C527RT320-0305  
C527RT320-0302  
520 nm  
525 nm  
530 nm  
535 nm  
Dominant Wavelength  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
www.cree.com  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.  
5
CPR3DU Rev. -  
Characteristic Curves  
These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various  
radiant flux and dominant wavelength bins.  
Wavelength Shift vs. Forward Current  
Forward Current vs. Forward Voltage  
15  
10  
5
30  
25  
20  
15  
10  
5
0
-5  
-10  
-15  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
If (mA)  
Vf (V)  
Relative Intensity vs. Forward Current  
250%  
200%  
150%  
100%  
50%  
0%  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
If (mA)  
Cree, Inc.  
4600 Silicon Drive  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
www.cree.com  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.  
6
CPR3DU Rev. -  

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