CAS300M17BM2 [CREE]
Half-Bridge Module;
| 型号： | CAS300M17BM2 |
| 厂家： | 
CREE, INC |
| 描述： | Half-Bridge Module |
| 文件： | 总9页 (文件大小：953K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
1.7 kV
CAS300M17BM2
1.7kV, 8.0 mΩ All-Silicon Carbide
Half-Bridge Module
Esw, Total @ 300A, 150 ˚C
RDS(on)
23.7 mJ
8.0 mΩ
C2M MOSFET and Z-Rec® Diode
Features
Package
62mm x 106mm x 30mm
•
•
•
•
•
•
•
UltraꢀLowꢀLoss
High-FrequencyꢀOperation
ZeroꢀReverseꢀRecoveryꢀCurrentꢀfromꢀDiode
ZeroꢀTurn-offꢀTailꢀCurrentꢀfromꢀMOSFET
Normally-off,ꢀFail-safeꢀDeviceꢀOperation
EaseꢀofꢀParalleling
CopperꢀBaseplateꢀandꢀAluminumꢀNitrideꢀInsulator
System Benefits
•
•
•
•
•
EnablesꢀCompactꢀandꢀLightweightꢀSystems
HighꢀEfficiencyꢀOperation
MitigatesꢀOver-voltageꢀProtection
ReducedꢀThermalꢀRequirements
ReducedꢀSystemꢀCost
Applications
Part Number
Package
Marking
•
•
•
•
•
HFꢀResonantꢀConverters/Inverters
SolarꢀandꢀWindꢀInverters
UPSꢀandꢀSMPS
MotorꢀDrive
Traction
CAS300M17BM2
ꢀHalf-BridgeꢀModuleꢀ CAS300M17BM2
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Drainꢀ-ꢀSourceꢀVoltage
Value
Unit
Test Conditions
Notes
VDSmax
VGSmax
VGSop
1.7
kV
V
Gateꢀ-ꢀSourceꢀVoltage
Gateꢀ-ꢀSourceꢀVoltage
-10/+25
Absoluteꢀmaximumꢀvalues
-5/20
325
225
900
556
V
Recommendedꢀoperationalꢀvalues
VGSꢀ=ꢀ20ꢀV,ꢀTCꢀ=ꢀ25ꢀ˚C
ID
ContinuousꢀMOSFETꢀDrainꢀCurrent
PulsedꢀDrainꢀCurrent
A
A
Fig.ꢀ26
Fig.ꢀ27
VGSꢀ=ꢀ20ꢀV,ꢀTCꢀ=ꢀ90ꢀ˚C
ID(pulse)
PulseꢀwidthꢀtpꢀlimitedꢀbyꢀTJ(max)
VGSꢀ=ꢀ-5ꢀV,ꢀTCꢀ=ꢀ25ꢀ˚C
IF
ContinuousꢀDiodeꢀForwardꢀCurrent
JunctionꢀTemperature
A
353
VGSꢀ=ꢀ-5ꢀV,ꢀTCꢀ=ꢀ90ꢀ˚C
TJmax
-40ꢀtoꢀ+150
˚C
TCꢀ,TSTG
CaseꢀandꢀStorageꢀTemperatureꢀRange
CaseꢀIsolationꢀVoltageꢀ
-40ꢀtoꢀ+125
4.5
˚C
Visol
kV
AC,ꢀ50ꢀHzꢀ,ꢀ1ꢀmin
LStray
PD
StrayꢀInductance
PowerꢀDissipation
15
nH
Measuredꢀbetweenꢀterminalsꢀ2ꢀandꢀ3
TCꢀ=ꢀ25ꢀ˚C,ꢀTJꢀ=ꢀ150ꢀ˚C
1760
W
Fig.ꢀ25
Subject to change without notice.
www.cree.com
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drainꢀ-ꢀSourceꢀBreakdownꢀVoltage
GateꢀThresholdꢀVoltage
Min.
1.7
Typ.
Max. Unit
Test Conditions
VGS,ꢀꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ1ꢀmA
Note
kV
V
ꢀ
1.8
2.3
500
1500
1
VDSꢀ=ꢀ10ꢀV, IDꢀ=ꢀ15ꢀmA
Fig.ꢀ7
1000
3000
600
10
μA
μA
nA
VDSꢀ=ꢀ1.7ꢀkV,ꢀVGSꢀ=ꢀ0V
IDSS
IGSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
Gate-SourceꢀLeakageꢀCurrent
OnꢀStateꢀResistance
VDSꢀ=ꢀ1.7ꢀkV,VGSꢀ=ꢀ0V,ꢀTJꢀ=ꢀ150ꢀ˚C
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0V
8.0
16.2
95
VGSꢀ=ꢀ20ꢀV,ꢀIDSꢀ=ꢀ225ꢀA
Fig.ꢀ4,ꢀ
5,ꢀ6
RDS(on)
mΩ
S
20
VGSꢀ=ꢀ20V,ꢀIDSꢀ=ꢀ225ꢀA,TJꢀ=ꢀ150ꢀ˚C
ꢀ
VDSꢀ=ꢀ20ꢀV, IDSꢀ=ꢀ225ꢀA
gfs
Transconductance
Fig.ꢀ8
ꢀ
VDSꢀ=ꢀ20ꢀV, IDꢀ=ꢀ225ꢀA,ꢀTJꢀ=ꢀ150ꢀ˚C
82
Ciss
Coss
Crss
Eon
InputꢀCapacitance
20
fꢀ=ꢀ200ꢀkHz,ꢀ
VDSꢀ=ꢀ1ꢀkV,ꢀꢀ
VACꢀ=ꢀ25ꢀmV
Fig.ꢀ
16,ꢀ17
OutputꢀCapacitance
2.5
nF
ReverseꢀTransferꢀCapacitance
0.08
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OnꢀSwitchingꢀEnergy
VDDꢀ=ꢀ900ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2.5ꢀΩ
Loadꢀ=ꢀ77ꢀμH,ꢀTJꢀ=ꢀ150ꢀ˚C
Note:ꢀIECꢀ60747-8-4ꢀDefinitions
13.0
10.0
mJ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Fig.ꢀ19
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OffꢀSwitchingꢀEnergy
EOff
mJ
Ω
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
InternalꢀGateꢀResistance
Gate-SourceꢀCharge
Gate-DrainꢀCharge
RGꢀ(int)
QGS
3.7
273
324
1076
105
fꢀ=ꢀ1ꢀMHz,ꢀVACꢀ=ꢀ25ꢀmV
ꢀ
VDD= 900ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V,
ID= 300ꢀA,ꢀPerꢀJEDEC24ꢀpgꢀ27
nC
Fig.ꢀ15
Fig.ꢀ24
QGD
QG
ꢀ
TotalꢀGateꢀCharge
td(on)
Turn-onꢀdelayꢀtimeꢀ
ns
VDDꢀ=ꢀ900V,ꢀꢀVGSꢀ=ꢀ-5/+20V,
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
TimingꢀrelativeꢀtoꢀVDS
Note:ꢀIECꢀ60747-8-4,ꢀpgꢀ83ꢀ
Inductiveꢀloadꢀ
tr
td(off)ꢀ
tf
RiseꢀTime
72
211
56
ns
ns
ns
Turn-offꢀdelayꢀtime
FallꢀTime
1.7
2.2
2.0
2.5
IFꢀ=ꢀ300ꢀA,ꢀVGSꢀ=ꢀ0
Fig.ꢀ10
Fig.ꢀ11
VSD
QC
DiodeꢀForwardꢀVoltage
TotalꢀCapacitiveꢀCharge
V
IFꢀ=ꢀ300ꢀA,ꢀVGSꢀ=ꢀ0ꢀ,ꢀTJꢀ=ꢀ150ꢀ˚C
ISDꢀ=ꢀ300ꢀA,ꢀVDSꢀ=ꢀ900ꢀV,ꢀTJꢀ=ꢀ
25°C,ꢀdiSD/dtꢀ=ꢀ9ꢀkA/μs,ꢀVGSꢀ=ꢀ-5ꢀV
4.4
μC
Thermal Characteristics
Symbol
RthJCM
Parameter
Min.
Typ.
Max.
0.071
0.065
Unit
Test Conditions
Note
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀMOSFET
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀDiode
0.067
0.060
Fig.ꢀ27
Fig.ꢀ28
˚C/W
RthJCD
Additional Module Data
Symbol
Parameter
Max.
Unit
Test Condtion
W
M
Weight
300
5
g
Nm
MountingꢀTorque
ClearanceꢀDistance
Toꢀheatsinkꢀandꢀterminals
Terminalꢀtoꢀterminal
9
mm
mm
mm
30
40
Terminalꢀtoꢀterminal
Terminalꢀtoꢀbaseplate
CreepageꢀDistance
CAS300M17BM2,Rev. -
2
Typical Performance
600
600
500
400
300
200
100
0
VGS = 20 V
VGS = 20 V
VGS = 18 V
500
VGS = 18 V
V
GS = 14 V
V
GS = 12 V
V
GS = 14 V
VGS = 16 V
400
V
GS = 16 V
V
GS = 12 V
V
GS = 10 V
300
200
100
0
VGS = 10 V
Conditions:
TJ = -40°C
tp = 200 µs
Conditions:
TJ = 25°C
tp = 200 µs
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
ꢀꢀꢀꢀFigureꢀ1.ꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ-40ꢀ˚C
Figureꢀ2.ꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ25ꢀ˚C
2.5
2.0
1.5
1.0
0.5
0.0
600
500
400
300
200
100
0
Conditions:
VGS = 20 V
VGS = 18 V
I
DS = 225 A
GS = 20 V
tp = 200 µs
V
V
GS = 12 V
GS = 10 V
V
GS = 16 V
V
VGS = 14 V
Conditions:
TJ = 150°C
tp = 200 µs
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
Junction Temperature, TJ (°C)
Drain-Source Voltage VDS (V)
ꢀFigureꢀ4.ꢀNormalizedꢀOn-Resistanceꢀvs.ꢀTemperature
Figureꢀ3.ꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ150ꢀ˚C
18
16
30
25
20
15
10
5
Conditions:
VGS = 20 V
tp = 200 µs
VGS = 12 V
14
12
10
8
VGS = 14 V
VGS = 16 V
Tj = 150 °C
VGS = 18 V
VGS = 20 V
Tj = 25 °C
6
Tj = -40 °C
4
Conditions:
DS = 225 A
tp = 200 µs
I
2
0
0
0
100
200
300
400
500
600
700
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Drain-Source Current, IDS (A)
Figureꢀ5.ꢀOn-Resistanceꢀvs.ꢀDrainꢀCurrentꢀ
ForꢀVariousꢀTemperatures
Figureꢀ6.ꢀOn-Resistanceꢀvs.ꢀTemperatureꢀforꢀ
VariousꢀGate-SourceꢀVoltage
CAS300M17BM2,Rev. -
3
Typical Performance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
400
300
200
100
0
Conditions:
VDS = 20 V
tp = 200 µs
Conditions
DS = 10 V
DS = 15mA
V
I
TJ = 150 °C
TJ = 25 °C
TJ = -40 °C
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
Junction Temperature TJ (°C)
Gate-SourceVoltage, VGS (V)
ꢀꢀꢀꢀFigureꢀ8.ꢀTransferꢀCharacteristicꢀforꢀVarious
JunctionꢀTemperatures
Figureꢀ7.ꢀThresholdꢀVoltageꢀvs.ꢀTemperature
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = 0 V
VGS = -2 V
VGS = 0 V
VGS = -5 V
VGS = -2 V
Conditions:
TJ = -40 °C
tp = 200 µs
Conditions:
TJ = 25°C
tp = 200 µs
VGS = -5 V
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ10.ꢀDiodeꢀCharacteristicꢀatꢀ25ꢀ˚Cꢀ
ꢀFigureꢀ9.ꢀDiodeꢀCharacteristicꢀatꢀ-40ꢀ˚C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
V
GS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = 5 V
VGS = 10 V
VGS = 20 V
VGS = 0 V
VGS = -5 V
VGS = -2 V
V
GS = 15 V
Conditions:
TJ = 150°C
tp = 200 µs
Conditions:
TJ = -40°C
tp = 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ12.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ-40ꢀ
˚C
Figureꢀ11.ꢀDiodeꢀCharacteristicꢀatꢀ150ꢀ˚Cꢀ
CAS300M17BM2,Rev. -
4
Typical Performance
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 0 V
VGS = 5 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
V
GS = 20 V
V
GS = 20 V
VGS = 10 V
V
GS = 15 V
V
GS = 15 V
Conditions:
TJ = 25°C
tp = 200 µs
Conditions:
TJ = 150°C
tp = 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ14.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ150ꢀ
˚C
ꢀꢀꢀꢀFigureꢀ13.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ25ꢀ
˚C
25
100
Conditions:
TJ = 25 °C
Conditions:
I
I
DS =300A
GS = 100 mA
Ciss
VAC = 25 mV
20
15
10
5
f = 200 kHz
VDS = 900 V
TJ = 25 °C
10
1
Coss
Crss
0.1
0.01
0
-5
0
200
400
600
800
1000
1200
0
50
100
Drain-Source Voltage, VDS (V)
150
200
Gate Charge, QG (nC)
Figureꢀ16.ꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ200ꢀV)
Figureꢀ15.ꢀGateꢀChargeꢀCharacteristics
100
10
1.6
Conditions:
TJ = 25 °C
Ciss
1.4
1.2
1
VAC = 25 mV
f = 200 kHz
Coss
1
0.8
0.6
0.4
0.2
0
Crss
0.1
0.01
0
200
400
600
800
1000
0
200
400
600
800
1000
1200
Drain-Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
Figureꢀ17.ꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ1ꢀkV)
Figureꢀ18.ꢀOutputꢀCapacitorꢀStoredꢀEnergy
CAS300M17BM2,Rev. -
5
Typical Performance
25
40
35
30
25
20
15
10
5
Conditions:
TJ = 25 °C
Conditions:
TJ = 25 °C
V
R
V
DD = 900 V
G(ext) = 2.5 Ω
GS = -5/+20 V
VDD = 1200 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
20
15
10
5
ETotal
L = 77 μH
L = 77 μH
ETotal
EOn
EOn
EOff
EOff
0
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
ꢀꢀꢀꢀFigureꢀ19.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDSꢀ=ꢀ900V,ꢀRGꢀ=ꢀ2.5ꢀΩꢀ
ꢀꢀꢀꢀFigureꢀ20.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDSꢀ=ꢀ1200ꢀV,ꢀRGꢀ=ꢀ2.5ꢀΩ
25
20
15
10
5
180
160
140
120
100
80
Conditions:
TJ = 25 °C
ETotal
V
DD = 900 V
DS =300 A
GS = -5/+20 V
I
V
ETotal
L = 77 μH
EOn
EOn
EOff
EOff
60
Conditions:
VDD = 900 V
R
G(ext) = 2.5 Ω
40
I
V
DS =300 A
GS = -5/+20 V
L = 77 μH
20
0
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
30
35
40
45
Junction Temperature, TJ (°C)
External Gate Resistor RG(ext) (Ohms)
Figureꢀ21.ꢀꢀInductiveꢀSwitchingꢀEnergyꢀvs.ꢀRG(ext)
Figureꢀ22.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.ꢀTemperature
1400
1200
1000
800
600
400
200
0
Conditions:
TJ = 25 °C
V
DD = 900 V
DS = 300 A
GS = -5/+20 V
I
V
td (off)
td (on)
tr
tf
0
5
10
15
20
25
30
35
40
External Gate Resistor, RG(ext) (Ohms)
Figureꢀ23.ꢀꢀTimingꢀvs.ꢀRG(ext)ꢀ
ꢀꢀꢀꢀFigureꢀ24.ꢀꢀResistiveꢀSwitchingꢀTimeꢀDescription
CAS300M17BM2,Rev. -
6
Typical Performance
2000
1800
1600
1400
1200
1000
800
350
300
250
200
150
100
50
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
600
400
200
0
0
-40
-20
0
20
40
60
80
100
120
140
-40
-20
0
20
40
60
80
100
120
140
Case Temperature, TC (°C)
Case Temperature, TC (°C)
ꢀꢀꢀꢀFigureꢀ25.ꢀMaximumꢀPowerꢀDissipationꢀ(MOSFET)ꢀDe-
ꢀꢀꢀꢀFigureꢀ26.ꢀꢀContinousꢀDrainꢀCurrentꢀDeratingꢀvsꢀCaseꢀ
Temperature
ratingꢀvs.ꢀCaseꢀTemperature
100E-3
0.5
100E-3
0.5
0.3
0.3
10E-3
10E-3
0.1
0.1
0.05
0.05
0.02
0.02
1E-3
1E-3
0.01
0.01
SinglePulse
SinglePulse
100E-6
10E-6
100E-6
10E-6
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
10
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
10
Figureꢀ28.ꢀDiodeꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
Figureꢀ27.ꢀMOSFETꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
1000.0
10 µs
Limited by RDS On
100 µs
1 ms
100.0
100 ms
10.0
1.0
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
0.1
1
10
100
1000
Drain-Source Voltage, VDS (V)
Figureꢀ29.ꢀꢀMaximumꢀPowerꢀDissipationꢀ(MOSFET)ꢀDerat-
ingꢀvs.ꢀCaseꢀTemperature
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Schematic
Package Dimensions (mm)
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Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ
systems,ꢀairꢀtrafficꢀcontrolꢀsystems.
Module Application Note:
TheꢀSiCꢀMOSFETꢀmoduleꢀswitchesꢀatꢀspeedsꢀbeyondꢀwhatꢀisꢀcustomarilyꢀassociatedꢀwithꢀIGBTꢀbasedꢀmodules.ꢀ
Therefore,ꢀspecialꢀprecautionsꢀareꢀrequiredꢀtoꢀrealizeꢀtheꢀbestꢀperformance.ꢀTheꢀinterconnectionꢀbetweenꢀtheꢀgateꢀ
driverꢀandꢀmoduleꢀhousingꢀneedsꢀtoꢀbeꢀasꢀshortꢀasꢀpossible.ꢀꢀThisꢀwillꢀaffordꢀtheꢀbestꢀswitchingꢀtimeꢀandꢀavoidꢀtheꢀ
potentialꢀforꢀdeviceꢀoscillation.ꢀꢀAlso,ꢀgreatꢀcareꢀisꢀrequiredꢀtoꢀinsureꢀminimumꢀinductanceꢀbetweenꢀtheꢀmoduleꢀandꢀ
linkꢀcapacitorsꢀtoꢀavoidꢀexcessiveꢀVDSꢀovershoots.
PleaseꢀReferꢀtoꢀapplicationꢀnote:ꢀDesignꢀConsiderationsꢀwhenꢀusingꢀCreeꢀSiCꢀModulesꢀPartꢀ1ꢀandꢀPartꢀ2.ꢀ
[CPWR-AN12,ꢀCPWR-AN13]
ꢀ
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
9
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