CAS325M12HM2 [CREE]
Ultra Low Loss, Low (5 nH) Inductance;
| 型号： | CAS325M12HM2 |
| 厂家： | 
CREE, INC |
| 描述： | Ultra Low Loss, Low (5 nH) Inductance |
| 文件： | 总7页 (文件大小：1075K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
1.2 kV
9.3 mJ
3.6 mΩ
CAS325M12HM2
1.2kV, 3.6 mΩ All-Silicon Carbide
High Performance, Half-Bridge Module
C2M MOSFET and Z-RecTM Diode
Esw, Total @ 600V, 300A
RDS(on)
Features
Package
65mm x 110mm x 10mm
•ꢀ UltraꢀLowꢀLoss,ꢀLowꢀ(5ꢀnH)ꢀInductance
•ꢀ Ultra-FastꢀSwitchingꢀOperation
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrentꢀfromꢀDiode
•ꢀ ZeroꢀTurn-offꢀTailꢀCurrentꢀfromꢀMOSFET
•ꢀ Normally-off,ꢀFail-safeꢀDeviceꢀOperation
•ꢀ AlSiCꢀBaseplateꢀandꢀSi3N4ꢀAMBꢀSubstrate
•ꢀ EaseꢀofꢀParalleling
•ꢀ HighꢀTemperatureꢀPackaging,ꢀTJ(max)ꢀ=ꢀ175ꢀ°C
•ꢀ AS9100ꢀ/ꢀISO9001ꢀCertifiedꢀManufacturing
ꢀ
System Benefits
•ꢀ EnablesꢀCompact,ꢀLightweightꢀSystemsꢀ
•ꢀ HighꢀEfficiencyꢀOperation
•ꢀ ReducedꢀThermalꢀRequirements
Applications
Part Number
Package
Marking
•ꢀ High-EfficiencyꢀConvertersꢀ/ꢀInverters
•ꢀ Motorꢀ&ꢀTractionꢀDrives
CAS325M12HM2
ꢀHalf-BridgeꢀModuleꢀ
CAS325M12HM2
•ꢀ Smart-Gridꢀ/ꢀGrid-TiedꢀDistributedꢀGeneration
ꢀ
ꢀꢀ
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Drainꢀ-ꢀSourceꢀVoltage
Value
Unit
Test Conditions
Notes
VDSmax
1.2
kV
-10/+25
-10/+23
T ꢀ=ꢀ-55ꢀtoꢀ150ꢀ°C
J
VGSmax
Gateꢀ-ꢀSourceꢀVoltage,ꢀMaximumꢀvalues
V
T =ꢀ-55ꢀtoꢀ175ꢀ°C
Jꢀ
-5/+20
-5/+18
T ꢀ=ꢀ-55ꢀtoꢀ150ꢀ°C
J
Gateꢀ-ꢀSourceꢀVoltage,ꢀRecommendedꢀOperationꢀ
values
VGSop
V
A
T =ꢀ-55ꢀtoꢀ175ꢀ°C
Jꢀ
444
256
TCꢀ=ꢀ25ꢀ˚CꢀT ꢀ=ꢀ175ꢀ°C
J
ID
ContinuousꢀDrainꢀCurrent
Fig.ꢀ17
TCꢀ=ꢀ125˚C,ꢀT ꢀ=ꢀ175ꢀ°C
J
T
JunctionꢀTemperature
175
˚C
˚C
Jmax
TCꢀ,TSTG
CaseꢀandꢀStorageꢀTemperatureꢀRange
-55ꢀtoꢀ+175
Visol
CaseꢀIsolationꢀVoltageꢀ
PowerꢀDissipation
1.2
kV
AC,ꢀ50ꢀHzꢀ,ꢀ1ꢀmin
PD
1500
W
TCꢀ=ꢀ25ꢀ˚C,ꢀTJꢀ=ꢀ175ꢀ˚Cꢀ(perꢀswitch)
Fig.ꢀ16
Subject to change without notice.
www.cree.com
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1.2
Typ.
Max.
Unit
Test Conditions
VGSꢀ=ꢀ-5ꢀV,ꢀIDꢀ=ꢀ2ꢀmA
Note
VDSS
Drainꢀ-ꢀSourceꢀBlockingꢀVoltage
kV
2.0
2.6
2.0
4
VDSꢀ=VGS,ꢀID=ꢀ105ꢀmA
VGS(th)
GateꢀThresholdꢀVoltage
V
VDSꢀ=VGS,ꢀID=ꢀ105ꢀmA,ꢀTJꢀ=ꢀ175ꢀ˚C
VDSꢀ=ꢀ1.2ꢀkV,ꢀVGSꢀ=ꢀ-5ꢀV
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0ꢀV
IDSS
IGSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
Gate-SourceꢀLeakageꢀCurrent
720
2000
3.5
μA
nA
3.6
7.6
4.3
VGSꢀ=ꢀ20ꢀV,ꢀIDSꢀ=ꢀ400ꢀA
RDS(on)
OnꢀStateꢀResistance
mΩ
Fig.ꢀ5
VGSꢀ=ꢀ18ꢀV,ꢀIDSꢀ=ꢀ400ꢀA,ꢀTJꢀ=ꢀ175ꢀ˚C
Ciss
Coss
Crss
Eon
InputꢀCapacitance
19.5
fꢀ=ꢀ1ꢀMHz,ꢀ
V
V
GSꢀ=ꢀ0ꢀV,ꢀVDSꢀ=ꢀ1000ꢀV,ꢀꢀ
ACꢀ=ꢀ25ꢀmV
Fig.ꢀ11,ꢀ
12
OutputꢀCapacitance
1.54
0.10
nF
ReverseꢀTransferꢀCapacitance
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OnꢀSwitchingꢀEnergy
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
5.6
3.7
VDDꢀ=ꢀ600ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2Ω
mJ
nC
Fig.ꢀ13
ꢀꢀꢀꢀꢀꢀꢀꢀ
EOff
Turn-OffꢀSwitchingꢀEnergy
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Note:ꢀIECꢀ60747-8-4ꢀDefinitions
QGS
QGD
QG
Gate-SourceꢀCharge
Gate-DrainꢀCharge
TotalꢀGateꢀCharge
322
350
ꢀ
DS= 800ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V,
ID= 350ꢀA,ꢀPerꢀIECꢀ60747-8-4
V
ꢀ
1127
dff
Free-Wheeling SiC Schottky Diode Characteristics
Symbol
Parameter
DiodeꢀForwardꢀVoltage
TotalꢀCapacitiveꢀCharge
Min.
Typ.
Max.
Unit
V
Test Conditions
Note
1.7
2.5
2.0
2.8
IFꢀ=ꢀ350ꢀA,ꢀVGSꢀ=ꢀ-5ꢀV
VSD
Fig.ꢀ6
IFꢀ=ꢀ350ꢀA,ꢀTJꢀ=ꢀ175ꢀ˚C,ꢀVGSꢀ=ꢀ-5ꢀV
QC
4.3
μC
IncludesꢀSchottkyꢀ&ꢀBodyꢀdiodes
Note:ꢀTheꢀreverseꢀrecoveryꢀisꢀpurelyꢀcapacitive
Thermal Characteristics
Symbol
RthJCM
Parameter
Min.
0.085
0.094
Typ.
Max.
0.115
0.127
Unit
Test Conditions
Note
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀMOSFET
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀDiode
0.100
0.110
Fig.ꢀ
18,19
˚C/W
RthJCD
Additional Module Data
Symbol
Parameter
Min.
Typ.
Max.
Unit
Test Condtion
W
Weight
140
1.1
4.5
5
g
0.9
3
1.3
5
PowerꢀTerminals,ꢀM4ꢀBolts
Baseplate,ꢀM6ꢀBolts
Nm
nH
M
MountingꢀTorque
LoopꢀInductance
LCE
CAS325M12HM2, Rev. A, 12-2016
2
Typical Performance
ꢀꢀꢀꢀFigureꢀ1.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ25ꢀ˚C
Figureꢀ2.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ175ꢀ˚C
Figureꢀ4.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ175ꢀ˚Cꢀ
Figureꢀ3.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ150ꢀ˚C
Figureꢀ5.ꢀOn-Resistanceꢀvs.ꢀTemperatureꢀforꢀ
VariousꢀGate-SourceꢀVoltageꢀ
Figureꢀ6.ꢀAntiparallelꢀDiodeꢀCharacteristic,ꢀ
VGSꢀ=ꢀ-5ꢀV
CAS325M12HM2, Rev. A, 12-2016
3
Typical Performance
Figureꢀ7.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ25ꢀ
˚C
ꢀꢀꢀꢀFigureꢀ8.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ125ꢀ
˚C
Figureꢀ10.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ175ꢀ
˚C
ꢀFigureꢀ9.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ150ꢀ
˚C
Figureꢀ11.ꢀTypicalꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ200ꢀV)
Figureꢀ12.ꢀTypicalꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ1ꢀkV)
CAS325M12HM2, Rev. A, 12-2016
4
Typical Performance
Figureꢀ14.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDDꢀ=ꢀ800V,ꢀRGꢀ=ꢀ2ꢀΩ
ꢀꢀꢀꢀFigureꢀ13.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDDꢀ=ꢀ600V,ꢀRGꢀ=ꢀ2ꢀΩ
Figureꢀ15.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
GateꢀResistance,ꢀIDSꢀ=ꢀ300A
Figureꢀ16.ꢀMaximumꢀPowerꢀDissipationꢀ(MOSFET)ꢀDeratingꢀ
PerꢀSwitchꢀPositionꢀvsꢀCaseꢀTemperature
Figureꢀ17.ꢀContinousꢀDrainꢀCurrentꢀDeratingꢀvsꢀ
CaseꢀTemperature
Figureꢀ18.ꢀMOSFETꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
CAS325M12HM2, Rev. A, 12-2016
5
Typical Performance
ꢀꢀꢀꢀFigureꢀ19.ꢀDiodeꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
Package Dimensions (mm)
CAS325M12HM2
Unspecified Dimensions
.XX = ± 0.3 mm
CAS325M12HM2, Rev. A, 12-2016
6
Important Notes
•ꢀ The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based moules. Therefore, special
precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs
to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is
required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.
•ꢀ The module utilizes the ESQT-105-02-G-D-XXX family of elevated socket connectors from Samtec, available in varying height ac-
cording to the customer’s preference
•ꢀ Companion Parts: CGD15HB62LP + High Performance Three Phase Evaluation Unit
•ꢀ Some values were obtained from the CPM2-1200-0025B and CPW5-1200-Z050B device datasheet.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toꢀequipmentꢀusedꢀinꢀtheꢀoperationꢀofꢀnuclearꢀfacilities,ꢀlife-supportꢀmachines,ꢀcardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀ
equipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀsystems,ꢀairꢀtrafficꢀcontrolꢀsystems.
•ꢀ The product described is not eligible for Distributor Stock Rotation or Inventory Price Protection.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2014 - 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
7
CAS325M12HM2 Rev. A, 12-2016
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