CGH55030F2_12 [CREE]
25 W, C-band, Unmatched, GaN HEMT;
| 型号： | CGH55030F2_12 |
| 厂家： | 
CREE, INC |
| 描述： | 25 W, C-band, Unmatched, GaN HEMT |
| 文件： | 总10页 (文件大小：2624K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGH55030F2 / CGH55030P2
25 W, C-band, Unmatched, GaN HEMT
Cree’s CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electro
mobility transistor (HEMT) designed specifically for high efficiency, hig
gain and wide bandwidth capabilities, which makes the CGH55030F2
CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The
transistor is available in both screw-down, flange and solder-down,
pill packages. Based on appropriate external match adjustment, the
CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.
FEATURES
APPLICATIONS
• 4.5 to 6.0 GHz Operation
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB Amplifiers for Drivers and
Gain Blocks
• 12 dB Small Signal Gain at 5.65 GHz
• 30 W typical PSAT
• 60 % Efficiency at PSAT
• 28 V Operation
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
VGS
Rating
84
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
-10, +2
-65, +150
225
25˚C
TSTG
TJ
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
˚C
IGMAX
IMAX
7.0
mA
25˚C
25˚C
3
A
TS
245
˚C
60
in-oz
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Case Operating Temperature3,4
RθJC
4.8
85˚C
TC
-40, +150
30 seconds
Note:
1
Current limit for long term, reliable operation.
Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
Measured for the CGH55030 at PDISS = 28 W.
2
3
4
See also, the Power Dissipation De-rating Curve on Page 5.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-3.0
7.0
–
–2.3
VDC
VDC
A
VDS = 10 V, ID = 7.2 mA
VDS = 28 V, ID = 250 mA
VDS = 6.0 V, VGS = 2 V
VGS = -8 V, ID = 7.2 mA
Gate Quiescent Voltage
–
–
–
Saturated Drain Current
Drain-Source Breakdown Voltage
5.8
120
VBR
VDC
RF Characteristics2 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain
Power Output3
GSS
PSAT
η
9.0
20
50
11.0
30
-
dB
W
VDD = 28 V, IDQ = 250 mA
VDD = 28 V, IDQ = 250 mA
VDD = 28 V, IDQ = 250 mA, PSAT
–
–
Drain Efficiency4
60
%
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA, PSAT
Y
Output Mismatch Stress
VSWR
-
–
10 : 1
Dynamic Characteristics
Input Capacitance
CGS
CDS
CGD
–
–
–
9.0
2.6
0.4
–
–
–
pF
pF
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance
Feedback Capacitance
Notes:
1
Measured on wafer prior to packaging.
Measured in CGH55030-TB.
PSAT is defined as IG = 0.72 mA.
Drain Efficiency = POUT / PDC
2
3
4
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
2
CGH55030F2_P2 Rev 3.2
Typical Performance
Small Signal S-Parameters vs Frequency of
CGH55030F2 and CGH55030P2 in the CGH55030-TB
VDD = 28 V, IDQ = 250 mA
12
10
8
5
S21
S11
0
-5
6
-10
-15
-20
-25
4
2
0
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
6.0
6.1
Frequency (GHz)
Drain Efficiency, Power and Gain vs Frequency of the
CGH55030F2 and CGH55030P2 in the CGH55030-TB
VDD = 28 V, IDQ = 250 mA
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
3
CGH55030F2_P2 Rev 3.2
Typical Performance
Simulated Maximum Available Gain and K Factor of the CGH55030F2/CGH55030P2
VDD = 28 V, IDQ = 250 mA
Typical Noise Performance
Simulated Minimum Noise Figure and Noise Resistance vs Frequency
of the CGH55030F2/CGH55030P2
VDD = 28 V, IDQ = 250 mA
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
4
CGH55030F2_P2 Rev 3.2
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
8.0 – j12.4
8.7 - j13.1
8.4 - j14.0
Z Load
5500
5650
5800
14.1 – j12.6
14.7 – j11.7
15.4 – j11.0
Note 1. VDD = 28V, IDQ = 250 mA in the 440166 package.
Note 2. Impedances are extracted from the CGH55030-TB demonstration
amplifier and are not source and load pull data derived from the transistor.
CGH55030F2 and CGH55030P2 Power Dissipation De-rating Curve
30
25
20
15
Note 1
10
5
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
5
CGH55030F2_P2 Rev 3.2
CGH55030-TB Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 1/16W, 0603, 1%, 562 OHMS
RES, 1/16W, 0603, 1%, 22.6 OHMS
CAP, 0.3pF, +/-0.05pF, 0402, ATC600L
CAP, 33 UF, 20%, G CASE
1
1
1
1
1
1
1
1
2
2
2
2
2
1
1
1
C2
C16
C15
C8
CAP, 1.0UF, 100V, 10%, X7R, 1210
CAP 10UF 16V TANTALUM
C9
CAP, 0.4pF, +/-0.05pF, 0603, ATC600S
CAP, 1.2pF, +/-0.1pF, 0603, ATC600S
CAP,200 PF,0603 PKG, 100 V
C1
C6,C13
C4,C11
C5,C12
C7,C14
J3,J4
J1
CAP, 10.0pF,+/-5%, 0603, ATC600S
CAP, 39pF, +/-5%, 0603, ATC600S
CAP, 330000PF, 0805, 100V, TEMP STABILIZ
CONN, SMA, PANEL MOUNT JACK, FLANGE
HEADER RT>PLZ .1CEN LK 5POS
PCB, RO4350B, Er = 3.48, h = 20 mil
CGH55030
-
-
CGH55030-TB Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
6
CGH55030F2_P2 Rev 3.2
CGH55030-TB Demonstration Amplifier Circuit Schematic
(CGH55030F)
CGH55030-TB Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
7
CGH55030F2_P2 Rev 3.2
Typical Package S-Parameters for CGH55030
(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.917
0.916
0.916
0.916
0.916
0.916
0.917
0.917
0.918
0.918
0.919
0.919
0.920
0.921
0.921
0.922
0.923
0.924
0.924
0.925
0.926
0.926
0.927
0.928
0.928
0.929
0.930
0.931
0.932
0.933
0.933
0.934
0.934
0.935
0.935
0.935
0.935
0.935
0.935
0.934
0.934
-157.22
-161.92
-165.46
-168.28
-170.61
-172.60
-174.33
-175.88
-177.28
-178.57
-179.78
179.09
178.01
176.98
175.99
175.03
174.09
173.17
172.27
171.39
170.51
169.65
168.79
167.93
167.08
166.24
164.54
162.85
161.14
159.42
157.68
155.91
154.11
152.28
150.41
148.49
146.53
144.52
142.45
140.31
138.12
12.62
10.57
9.07
7.94
7.05
6.33
5.74
5.24
4.82
4.46
4.14
3.87
3.62
3.40
3.21
3.03
2.87
2.73
2.60
2.47
2.36
2.26
2.16
2.08
1.99
1.92
1.78
1.66
1.55
1.46
1.38
1.31
1.24
1.18
1.13
1.08
1.04
1.00
0.97
0.94
0.91
91.45
87.33
83.78
80.58
77.64
74.88
72.25
69.73
67.30
64.94
62.65
60.41
58.22
56.07
53.97
51.90
49.87
47.87
45.91
43.97
42.07
40.19
38.34
36.52
34.72
32.94
29.45
26.05
22.72
19.46
16.27
13.12
10.03
6.97
0.018
0.018
0.018
0.018
0.017
0.017
0.017
0.017
0.017
0.017
0.016
0.016
0.016
0.016
0.015
0.015
0.015
0.014
0.014
0.014
0.014
0.013
0.013
0.013
0.013
0.013
0.012
0.012
0.012
0.012
0.012
0.012
0.013
0.013
0.014
0.015
0.016
0.017
0.018
0.020
0.021
7.56
4.70
0.458
0.465
0.472
0.478
0.485
0.493
0.500
0.508
0.516
0.525
0.533
0.542
0.550
0.559
0.568
0.577
0.585
0.594
0.602
0.610
0.619
0.626
0.634
0.642
0.649
0.656
0.670
0.683
0.695
0.706
0.716
0.726
0.735
0.743
0.750
0.756
0.762
0.768
0.773
0.777
0.781
-158.97
-160.93
-162.19
-163.04
-163.64
-164.09
-164.45
-164.77
-165.06
-165.36
-165.67
-165.99
-166.35
-166.73
-167.14
-167.59
-168.07
-168.57
-169.11
-169.67
-170.26
-170.88
-171.52
-172.17
-172.85
-173.55
-175.00
-176.50
-178.06
-179.66
178.70
177.02
175.30
173.56
171.78
169.97
168.12
166.24
164.32
162.36
160.36
2.41
0.51
-1.12
-2.55
-3.82
-4.94
-5.95
-6.84
-7.63
-8.31
-8.90
-9.39
-9.77
-10.06
-10.24
-10.31
-10.27
-10.12
-9.85
-9.46
-8.95
-8.31
-7.54
-6.65
-4.49
-1.85
1.19
4.55
8.08
11.64
15.08
18.26
21.09
23.50
25.48
27.02
28.12
28.83
29.18
3.95
0.96
-2.00
-4.96
-7.90
-10.84
-13.79
Download this s-parameter file in “.s2p” format at http://www.cree.com/products/wireless_s-parameters.asp
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
www.cree.com/wireless
8
CGH55030F2_P2 Rev 3.2
Product Dimensions CGH55030F (Package Type — 440166)
Product Dimensions CGH55030P (Package Type — 440196)
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
9
CGH55030F2_P2 Rev 3.2
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent
or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are
provided for information purposes only. These values can and do vary in different applications and actual performance
can vary over time. All operating parameters should be validated by customer’s technical experts for each application.
Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result
in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear
facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/wireless
Sarah Miller
Marketing & Export
Cree, RF Components
919.407.5302
Ryan Baker
Marketing
Cree, RF Components
919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
919.407.5639
Cree, Inc.
4600 Silicon Drive
Copyright © 2008-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
10
CGH55030F2_P2 Rev 3.2
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