CGHV1F025S_技术文档

CGHV1F025S

25 W, DC - 15 GHz, 40V, GaN HEMT

Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron

mobility transistor (HEMT) designed speciﬁcally for high efﬁciency, high gain

and wide bandwidth capabilities. The device can be deployed for L, S, C, X and

Ku-Band ampliﬁer applications. The datasheet speciﬁcations are based on a

X-Band (8.9 - 9.6 GHz) ampliﬁer. The CGHV1F025S operates on a 40 volt rail

circuit while housed in a 3mm x 4mm, surface mount, dual-ﬂat-no-lead (DFN)

package. Under reduced power, the transistor can operate below 40V to as low

as 20V V_DD,maintaining high gain and efﬁciency.

Typical Performance 8.9 - 9.6 GHz (T_C= 25˚C) , 40 V

Parameter

8.9 GHz

9.2 GHz

9.4 GHz

9.6 GHz

Units

Output Power @ P_IN= 37 dBm

24

29

27

25

W

Drain Efﬁciency @ P_IN= 37 dBm

43.5

48.5

11.6

48

46

%

Gain @ P_IN= 0 dBm

10.7

11.3

11.1

dB

Note:

Measured in the CGHV1F025S-TB1 application circuit. Pulsed 100 µs 10% duty.

Features

•ꢀ Up to 15 GHz Operation

•ꢀ 25 W Typical Output Power

•ꢀ 11 dB Gain at 9.4 GHz

•ꢀ Application circuit for 8.9 - 9.6 GHz

Subject to change without notice.

www.cree.com/rf

1

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

V_DSS

V_GS

Rating

100

Units

Volts

˚C

Notes

25˚C

Drain-Source Voltage

Gate-to-Source Voltage

-10, +2

-65, +150

225

Storage Temperature

T_STG

T_J

Operating Junction Temperature

Maximum Forward Gate Current

Maximum Drain Current¹

Soldering Temperature²

˚C

I_GMAX

I_DMAX

T_S

4.8

mA

25˚C

2

A

245

˚C

Case Operating Temperature^3,4

Thermal Resistance, Junction to Case⁵

T_C

-40, +150

3.4

˚C

R_θJC

˚C/W

85˚C

Note:

1

Current limit for long term, reliable operation

2

3

Refer to the Application Note on soldering at www.cree.com/rf/document-library

Simulated at P_DISS= 2.4 W

⁴T_C= Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add

additional thermal resistance.

⁵Pulsed (100 µs, 10% Duty). Rth for Cree’s reference design using a 10 mil Rogers 5880 PCB with 31 (Ø13 mil) Vias would be 3.6 °C/W.

For CW operation, the Rth numbers increase to 5°C/W for just the device, and 7.3 °C/W including the board.

Electrical Characteristics (T_C= 25˚C) - 40 V Typical

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.7

-4.3

–

-2.3

–

V_DC

A

V_DS= 10 V, I_D= 4.8 mA

V_DS= 40 V, I_D= 240 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 4.8 mA

Gate Quiescent Voltage

Saturated Drain Current²

Drain-Source Breakdown Voltage

3.8

100

–

V_(BR)DSS

–

V_DC

RF Characteristics³(T_C= 25˚C, F₀= 6.0 GHz unless otherwise noted)

Gain

G

P_OUT

η

–

16

29

55

-

–

-

dB

W

V_DD= 40 V, I_DQ= 150 mA, P_IN= 0 dBm

V_DD= 40 V, I_DQ= 150 mA, P_IN= 34 dBm

Output Power⁴

Drain Efﬁciency⁴

%

No damage at all phase angles,

V_DD= 40 V, I_DQ= 150 mA, P_OUT= 29 W

Output Mismatch Stress⁴

VSWR

-

10 : 1

-

Y

Dynamic Characteristics

Input Capacitance⁵

C_GS

C_DS

C_GD

–

5.9

2

–

pF

V_DS= 40 V, V_gs= -8 V, f = 1 MHz

Output Capacitance⁵

Feedback Capacitance

Notes:

Measured on wafer prior to packaging

Scaled from PCM data

0.21

1

2

3

Measured in CGHV1F025S-TB

4

Pulsed 100 µs, 10% duty cycle

⁵Includes package

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

and the Cree logo are registered trademarks of Cree, Inc.

www.cree.com/rf

2

CGHV1F025S Rev 0.2 - Preliminary

Electrical Characteristics When Tested in CGHV1F025S-TB1

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

RF Characteristics¹(T_C= 25˚C, F₀= 8.9 - 9.6 GHz unless otherwise noted)

Gain

G

P_OUT

η

–

11.6

29

-

–

-

dB

W

%

Y

V_DD= 40 V, I_DQ= 150 mA, P_IN= 0 dBm

V_DD= 40 V, I_DQ= 150 mA, P_IN= 37 dBm

V_DS= 40 V, V_gs= -8 V, P_OUT= 25 W

Output Power²

Drain Efﬁciency²

Output Mismatch Stress²

48.5

10 : 1

VSWR

–

Notes:

1

Measured in CGHV1F025S-TB1 Application Circuit

Pulsed 100 µs, 10% duty cycle

2

Typical Performance - CGHV1F025S-TB1

Figure 1. - Typical Small Signal Response of CGHV1F025S-TB1 Application Circuit

V_DD= 40 V, I_DQ= 150 mA

16

14

12

10

8

6

4

2

0

-2

-4

-6

-8

-10

-12

S21

-14

S11

-16

S22

-18

-20

8.2

8.4

8.6

8.8

9.0

9.2

9.4

9.6

9.8

10.0

10.2

10.4

10.6

Frequency (GHz)

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

3

CGHV1F025S Rev 0.2 - Preliminary

Typical Performance in Application Circuit CGHV1F025S-TB1

Figure 2. - Typical Large Signal Response

V_DD= 40 V, I_DQ= 150 mA, P_IN= 37 dBm

Tcase = 25°C, Pulse Width = 100 μs, Duty Cycle = 10 %

50

20

18

16

14

12

10

8

48

Efﬁciency

Drain Efﬁciency

46

44

Output Power

42

40

Gain

38

36

6

Power Gain

Drain Efficiency

34

4

Output Power

Offset

32

2

Power Gain

30

0

8.8

8.9

9.0

9.1

9.2

9.3

9.4

9.5

9.6

9.7

Frequency (GHz)

Figure 3. - G_MAXand K-Factor vs Frequency

V_DD= 40 V, I_DQ= 150 mA, Tcase = 25°C

40

35

30

25

20

15

10

5

3.5

Gmax

3

K-Factor

2.5

2

1.5

1

0.5

0

2

4

6

8

10

12

14

16

Frequency (GHz)

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

4

CGHV1F025S Rev 0.2 - Preliminary

CGHV1F025S-TB1 Application Circuit

Bill of Materials

CGHV1F025S-TB1 Application Circuit

Designator

Description

Qty

R1

R2

RES, 100, OHM, +1/-1%, 1/16 W, 0603

RES, 10, OHM, +1/-1%, 1/16 W, 0603

CAP, 1pF, ±0.1 pF, 0603, ATC

CAP, 1.8pF, ±0.1 pF, 0603, ATC

CAP, 0.6pF, ±0.1 pF, 0603, ATC

CAP, 10 pF, ±5%, 0603, ATC

1

2

1

2

1

2

1

C1, C2

C3, C4

C9, C10

C5, C11

C6, C12

C7, C13

C14

CAP, 470 pF, 5%, 100 V, 0603, X

CAP, 33000 pF, 0805, 100V, X7R

CAP, 1.0 UF, 100V, 10%, X7R, 1210

CAP, 10 UF, 16V TANTALUM

C8

C15

CAP, 33UF, 20%, G CASE

J1, J2

J3

CONN, SMA, PANEL MOUNT JACK, FLANGE

HEADER RT>PLZ .1CEN LK 5POS

QFN TRANSISTOR CGHV1F025S

CABLE, 18 AWG, 4.2

Q1

W1

Rogers 5880 PCB 10 mils

Electrostatic Discharge (ESD) Classiﬁcations

Parameter

Symbol

HBM

Class

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Human Body Model

Charge Device Model

1A (> 250 V)

CDM

2 (125 V to 250 V)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

and the Cree logo are registered trademarks of Cree, Inc.

www.cree.com/rf

5

CGHV1F025S Rev 0.2 - Preliminary

CGHV1F025S-TB1 Application Circuit Schematic

CGHV1F025S-TB1 Application Circuit Outline

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

6

CGHV1F025S Rev 0.2 - Preliminary

Product Dimensions CGHV1F025S (Package 3 x 4 DFN)

Input/Output

1

2

GND

RF IN

GND

3

4

5

6

7

GND

8

RF OUT

GND

9

10

11

12

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

7

CGHV1F025S Rev 0.2 - Preliminary

Part Number System

CGHV1F025S

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

Parameter

Value

Units

Upper Frequency¹

15.0

25

GHz

Power Output

W

Surface

Mount

Package

-

Table 1.

Note¹: Alpha characters used in frequency

code indicate a value greater than 9.9 GHz.

See Table 2 for value.

Character Code

Code Value

A

B

C

D

E

F

0

1

2

3

4

5

6

7

8

9

G

H

J

K

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Table 2.

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

8

CGHV1F025S Rev 0.2 - Preliminary

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet

to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent

or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products

for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are

provided for information purposes only. These values can and do vary in different applications and actual performance

can vary over time. All operating parameters should be validated by customer’s technical experts for each application.

Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear

facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.313.5639

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

9

CGHV1F025S Rev 0.2 - Preliminary


型号：	CGHV1F025S
厂家：	CREE, INC
描述：	25 W, DC - 15 GHz, 40V, GaN HEMT
文件：	总9页 (文件大小：972K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CGHV1F025S [CREE]

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