CGHV22100F-AMP [CREE]
100 W, 1800-2200 MHz, GaN HEMT for LTE;
| 型号： | CGHV22100F-AMP |
| 厂家： | 
CREE, INC |
| 描述： | 100 W, 1800-2200 MHz, GaN HEMT for LTE LTE |
| 文件： | 总11页 (文件大小：1006K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV22100
100 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22100 is a gallium nitride (GaN) high electron mobility transistor (HEM
is designed specifically for high efficiency, high gain and wide bandwidth capabilitie
which makes the CGHV22100 ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BW
amplifier applications. The transistor is input matched and supplied in a ceramic
metal flange package.
Typical Performance Over 1.8 - 2.2 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Units
Gain @ 44 dBm
18.7
20.7
22.0
dB
ACLR @ 44 dBm
Drain Efficiency @ 44 dBm
Note:
-37.8
35.4
-37.1
31.7
-35.1
30.6
dBc
%
Measured in the CGHV22100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
•
•
•
•
•
1.8 - 2.2 GHz Operation
20 dB Gain
-35 dBc ACLR at 25 W PAVE
31-35 % Efficiency at 25 W PAVE
High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
125
Units
Volts
Volts
˚C
Conditions
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
25˚C
Storage Temperature
TSTG
Operating Junction Temperature3
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
T
˚C
J
IGMAX
IDMAX
TS
16
mA
A
25˚C
25˚C
6
245
˚C
80
in-oz
˚C/W
˚C/W
˚C
τ
Thermal Resistance, Junction to Case3
Thermal Resistance, Junction to Case4
Case Operating Temperature5
RθJC
RθJC
TC
2.34
85˚C, PDISS = 48 W
85˚C, PDISS = 48 W
2.95
-40, +150
Note:
1 Current limit for long term, reliable operation.
2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3 Measured for the CGHV22100P
4 Measured for the CGHV22100F
5 See also, the Power Dissipation De-rating Curve on Page 4.
Electrical Characteristics (TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
14.4
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 16 mA
VDS = 50 V, ID = 0.5 A
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 16 mA
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
12
–
VBR
150
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 2.17 GHz unless otherwise noted)
Gain4
G
ACLR
η
19.75
–
22
-35
–
-31
–
dB
dBc
%
VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm
VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm
VDD = 50 V, IDQ = 0.5 A, POUT = 44 dBm
WCDMA Linearity4
Drain Efficiency4
26.5
30.5
No damage at all phase angles, VDD = 50 V, IDQ
= 0.5 A, POUT = 100 W Pulsed
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Dynamic Characteristics
Input Capacitance5
CGS
CDS
CGD
–
–
–
66
8.7
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
Feedback Capacitance
0.47
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in CGHV22100-AMP
4 Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF.
5 Includes package and internal matching components.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV22100 Rev 2.0
Typical Performance
Figure 1. - Small Signal Gain and Return Losses vs Frequency for the
CGHV22100 measured in CGHV22100-AMP Amplifier Circuit
VDD = 50 V, IDQ = 0.5 A
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
S21
S11
S22
1600
1700
1800
1900
2000
2100
2200
2300
2400
Frequency (MHz)
Typical Linear Performance
Figure 2. - Typical Drain Efficiency and ACLR vs Output Power
of the CGHV22100 measured in CGHV22100-AMP Amplifier Circuit.
VDS = 50 V, IDS = 0.5 A, 1c WCDMA, PAR = 7.5 dB
0
45
40
35
30
25
20
15
10
5
-5
ACLR_1p8
ACLR_2p0
-10
-15
-20
-25
-30
-35
-40
-45
ACLR_2p2
EFF_1p8
EFF_2p0
EFF_2p2
0
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV22100 Rev 2.0
Typical Performance
Figure 3. - Typical Gain, Drain Efficiency and ACLR vs Frequency
of CGHV22100 measured in CGHV22100-AMP Amplifier Circuit.
VDS = 50 V, IDS = 0.5 A, PAVE = 25 W, 1c WCDMA, PAR = 7.5 dB
50
45
40
35
30
25
20
15
10
5
-30
-31
-32
-33
-34
-35
-36
-37
-38
-39
-40
EFF
GAIN
ACLR
Gain
EFF
ACLR
0
1.8
1.9
2
2.1
2.2
Frequency (GHz)
CGHV22100 Power Dissipation De-rating Curve
50
45
40
35
30
25
20
15
10
5
440161 Package
440162 Package
Note 1
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature ( C)
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV22100 Rev 2.0
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
4.50 + j0.91
5.20 + j1.15
6.02 + j1.03
Z Load
1800
1900
2000
5.21 - j2.58
5.01 - j2.09
4.85 - j1.61
2100
2200
6.75 + j0.42
7.03 - j0.64
4.70 - j1.12
4.58 - j0.62
Note1: VDD = 50 V, IDQ = 0.5 A. In the 440162 package.
Note2: Impedances are extracted from CGHV22100-AMP demonstration circuit
and are not source and load pull data derived from transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
CDM
2 (125 V to 250 V)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV22100 Rev 2.0
CGHV22100-AMP1 Demonstration Amplifier Circuit Bill of Materials
Designator
Description
Qty
R1
R2
RES, 1/16 W, 0603, 1%, 10.0 OHMS
RES, 1/16 W, 0603, 1%, 5.1 OHMS
CAP, 470 pF, 5%, 100 V, 0603, X
CAP, 1.0 UF, 100 V, 10%, x7R, 121
CAP, 100 UF, 20%, 160 V, ELEC
CAP, 10 UF, 16 V, TANTALUM, 2312
CAP, 10.0 pF, 5%, 0603, ATC
CAP, 33000 pF, 0805, 100 V, X7R
CAP, 10 pF, 5%, 250 V, 0805, A
CONN, N, FEM, W/.500 SMA FLNG
HEADER RT>PLZ .1CEN LK 9POS
BASEPLATE, CGH35120
1
1
3
3
2
1
5
3
1
2
1
C4, C14, C24
C6,C16, C26
C17, C27
C7
C1, C2, C3, C13, C23
C5, C15, C25
C11
J1, J2
J3
PCB, CGHV22100F, RO4350
2-56 SOC HD SCREW 1/4 SS
#2 SPLIT LOCKWASHER SS
CGHV22100F
1
4
4
1
CGHV22100-AMP Demonstration Amplifier Circuit
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV22100 Rev 2.0
CGHV22100-AMP Demonstration Amplifier Circuit Schematic
CGHV22100-AMP Demonstration Amplifier Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV22100 Rev 2.0
Product Dimensions CGHV22100 (Package Type — 440162)
Product Dimensions CGHV22100 (Package Type — 440161)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV22100 Rev 2.0
Part Number System
CGHV22100F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
2.2
100
GHz
W
-
Flange
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV22100 Rev 2.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV22100F
GaN HEMT
Each
CGHV22100P
CGHV22100-TB
CGHV22100F-AMP
GaN HEMT
Each
Each
Each
Test board without GaN HEMT
Test board with GaN HEMT installed
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV22100 Rev 2.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV22100 Rev 2.0
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