CGHV27015S_技术文档

CGHV27015S

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility

transistor (HEMT) designed speciﬁcally for high efﬁciency, high gain and wide

bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom

and BWA ampliﬁer applications. The CGHV27015S GaN HEMT devices are suitable

for 3300-3500MHz, 4900-5900MHz, 700-960MHz, 1800-2200MHz, 2500-2700MHz

and extended S and C Band applications. The CGHV27015S operates from a 50 volt

rail. The transistor is available in a 3mm x 4mm, surface mount, dual-ﬂat-no-lead

(DFN) package.

Typical Performance 2.4-2.7 GHz (T_C= 25˚C) , 50 V

Parameter

2.4 GHz

2.5 GHz

2.6 GHz

2.7 GHz

Units

Small Signal Gain

23

22

21.7

21.2

dB

Adjacent Channel Power @ P_OUT= 2.5 W

Drain Efﬁciency @ P_OUT= 2.5 W

Input Return Loss

-36.7

35.9

-40.7

33.5

-9.6

-42.4

30.4

-8.6

-42.5

30.2

-7.8

dBc

%

-9.312

dB

Note:

Measured in the CGHV27015S-TB1 application circuit.

Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.

Features for 50 V in CGHV27015S-TB1

• 2.4 - 2.7 GHz Operation

• 15 W Typical Output Power

• 21 dB Gain at 2.5 W P_AVE

• -38 dBc ACLR at 2.5 W P_AVE

• 32% efﬁciency at 2.5 W P_AVE

• High degree of APD and DPD correction can be applied

Subject to change without notice.

www.cree.com/rf

1

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

V_DSS

V_GS

Rating

125

Units

Volts

˚C

Notes

25˚C

Drain-Source Voltage

Gate-to-Source Voltage

Storage Temperature

-10, +2

-65, +150

225

T_STG

T_J

Operating Junction Temperature

Maximum Forward Gate Current

Maximum Drain Current¹

Soldering Temperature²

Case Operating Temperature³

Thermal Resistance, Junction to Case⁴

˚C

I_GMAX

I_DMAX

T_S

2

mA

25˚C

0.9

A

245

˚C

T_C

-40, +150

11.1

˚C

R_θJC

˚C/W

85˚C

Note:

1

Current limit for long term, reliable operation

2

Refer to the Application Note on soldering at www.cree.com/rf/document-library

3

T_C= Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal

resistance. See also, the Power Dissipation De-rating Curve on page 7.

4

Measured for the CGHV27015S at P_DISS= 5 W

5

The R_THfor Cree’s demonstration ampliﬁer, CGHV27015S-TB1, with 31 x 0.011 via holes designed on a 20 mil thick Rogers 4350 PCB,

is 3.9°C. The total R_THfrom the heat sink to the junction is 11.1°C + 3.9°C = 15°C/W.

Electrical Characteristics (T_C= 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.6

1.78

–

-2.3

–

V_DC

A

V_DS= 10 V, I_D= 2 mA

V_DS= 50 V, I_D= 60 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 2 mA

Gate Quiescent Voltage

Saturated Drain Current

Drain-Source Breakdown Voltage

1.48

150

–

V_(BR)DSS

–

V_DC

RF Characteristics^2,3(T_C= 25˚C, F₀= 2.7 GHz unless otherwise noted)

Gain

G

ACLR

η

–

21.2

-42.5

30.2

-

–

-

dB

dBc

%

V_DD= 50 V, I_DQ= 60 mA, P_OUT= 34 dBm

WCDMA Linerarity⁴

Drain Efﬁciency⁴

No damage at all phase angles,

V_DD= 50 V, I_DQ= 60 mA, P_OUT= 34 dBm

Y

Output Mismatch Stress

VSWR

-

10 : 1

-

Dynamic Characteristics

Input Capacitance⁵

C_GS

C_DS

C_GD

–

3.15

1.06

–

pF

V_DS= 50 V, V_gs= -8 V, f = 1 MHz

Output Capacitance⁵

Feedback Capacitance

Notes:

0.058

1

Measured on wafer prior to packaging

2

Scaled from PCM data

3

Measured in Cree’s production test ﬁxture. This ﬁxture is designed for high volume test at 2.7 GHz

4

Single Carrier WCDMA, 3GPP Test Model 1, 64 DPCH, 45% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF

⁵Includes package and internal matching components

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

2

CGHV27015S Rev 1.1 - Preliminary

Typical Performance in Application Circuit CGHV27015S-TB1

Figure 1. - Small Signal Gain and Return Losses vs Frequency

V_DD= 50 V, I_DQ= 60 mA

30

25

20

15

10

5

0

-5

-10

-15

S11

S21

S22

-20

-25

2

2.1

2.2

2.3

2.4

2.5

2.6

2.7

2.8

2.9

3

3.1

3.2

Frequency (GHz)

Figure 2. - Typical Drain Efﬁciency and ACLR vs. Output Power

V_DD= 50 V, I_DQ= 60 mA, 1 Carrier WCDMA, PAR = 7.5 dB

0

45

40

35

30

25

20

15

10

5

-5

ACLR_2p4

ACLR_2p5

-10

ACLR_2P6

Efﬁciency

ACLR_2p7

-15

EFF_2p4

EFF_2p5

-20

EFF_2P6

EFF_2p7

-25

-30

-35

-40

-45

ACLR

0

18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

Output Power (dBm)

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

3

CGHV27015S Rev 1.1 - Preliminary

Typical Performance in Application Circuit CGHV27015S-TB1

Figure 3. - Typical Gain, Drain Efﬁciency and ACLR vs Frequency

V_DD= 50 V , I_DQ= 60 mA, P_AVE= 2.5 W, 1 Carrier WCDMA, PAR = 7.5 dB

40

35

30

25

20

15

10

5

-25.0

-27.5

-30.0

-32.5

-35.0

-37.5

-40.0

-42.5

-45.0

Drain Efﬁciency

Gain

GAIN

EFF

ACLR

0

2.35

2.40

2.45

2.50

2.55

2.60

2.65

2.70

2.75

Frequency (GHz)

Electrostatic Discharge (ESD) Classiﬁcations

Parameter

Symbol

HBM

Class

1A (> 250 V)

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Human Body Model

Charge Device Model

CDM

2 (125 V to 250 V)

Moisture Sensitivity Level (MSL) Classiﬁcation

Parameter

Symbol

Level

Test Methodology

Moisture Sensitivity Level

MSL

3 (168 hours)

IPC/JEDEC J-STD-20

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

Cree logo are registered trademarks of Cree, Inc.

www.cree.com/rf

4

CGHV27015S Rev 1.1 - Preliminary

Typical Performance

G_MAXand K-Factor vs Frequency

V_DD= 50 V, I_DQ= 60 mA, Tcase = 25°C

40

35

30

25

20

15

10

1.25

1

Gmax

K-Factor

0.75

0.5

0.25

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Frequency (GHz)

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

5

CGHV27015S Rev 1.1 - Preliminary

Source and Load Impedances for Application Circuit CGHV27015S-TB1

D

Z Source

Z Load

G

S

Frequency (MHz)

Z Source

Z Load

2400

2500

2600

2700

7.9 + j2.14

8 + j2.9

15.8 + j43.1

18.3 + j43.7

19.7 + j43.4

7.9 + j3.6

7.7 - j4.4

Note¹: V_DD= 50 V, I_DQ= 60 mA in the DFN package.

Note²: Impedances are extracted from the CGHV27015S-TB1 application

circuit and are not source and load pull data derived from the transistor.

CGHV27015S-TB1 Application Circuit Bill of Materials

Designator

Description

Qty

R1

R2

RES, 332,OHM, +/- 1%, Vishay

1

RES, 22.6,OHM, +/- 1%, 1/16W, 0603

RES, 2.2,OHM, +/- 1%, 1/16W, 0603

R3, R4

C1, C4

CAP, 27pF, +/- 5%, 0603, ATC

CAP, 2.0pF,+/-0.1pF, 0603 ATC

2

1

C2

C3

C8

CAP, 0.1pF,+/-0.05 pF, 0603, ATC

CAP, 6.2pF, +/-0.1pF, 0603, ATC

CAP, 10pF +/-5%, 0603, ATC

2

1

C13

C6, C11

CAP, 33000pF, 0805, ATC

2

C7, C12

C10

CAP, 470PF, 5%, 100V, 0603,

2

1

CAP, 1.0UF, 100V, 10%, X7R, 1210

C5

CAP 10UF 16V TANTALUM

CAP, 33UF, 20%, G CASE

1

C9

1

2

J1, J2

CONN, SMA, PANEL MOUNT JACK, FLANGE,

4-HOLE, BLUNT POST

J3

HEADER RT>PLZ .1CEN LK 5POS

1

Q1

CGHV27015S, DFN

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

6

CGHV27015S Rev 1.1 - Preliminary

CGHV27015S-TB1 Application Circuit, 50 V

CGHV27015S-TB1 Application Circuit Schematic, 50 V

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

7

CGHV27015S Rev 1.1 - Preliminary

CGHV27015S-TB1 Application Circuit, 50 V

CGHV27015S-TB1 Power Dissipation De-rating Curve

7

6

5

4

3

2

1

0

Note 1

0

25

50

75

100

125

150

175

200

225

250

Maximum Temperature (°C)

Note 1. Area exceeds Maximum Case Temperature (See Page 2)

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

8

CGHV27015S Rev 1.1 - Preliminary

Product Dimensions CGHV27015S (Package 3 x 4 DFN)

Input/Output

1

2

GND

NC

3

RF IN

NC

4

5

6

GND

NC

7

8

9

RF OUT

NC

10

11

12

GND

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

9

CGHV27015S Rev 1.1 - Preliminary

Part Number System

CGHV27015S

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

Parameter

Value

Units

Upper Frequency¹

Power Output

2.7

GHz

15

W

Surface

Mount

Package

-

Table 1.

Note¹: Alpha characters used in frequency

code indicate a value greater than 9.9 GHz.

See Table 2 for value.

Character Code

Code Value

A

B

C

D

E

F

0

1

2

3

4

5

6

7

8

9

G

H

J

K

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Table 2.

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

10

CGHV27015S Rev 1.1 - Preliminary

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet

to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other

rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent

or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products

for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are

provided for information purposes only. These values can and do vary in different applications and actual performance

can vary over time. All operating parameters should be validated by customer’s technical experts for each application.

Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result

in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear

facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.313.5639

Cree, Inc.

4600 Silicon Drive

Cree logo are registered trademarks of Cree, Inc.

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

11

CGHV27015S Rev 1.1 - Preliminary


型号：	CGHV27015S
厂家：	CREE, INC
描述：	RF Power Field-Effect Transistor,
文件：	总11页 (文件大小：809K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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