CGHV40030P [CREE]
30 W, DC - 6 GHz, 50V, GaN HEMT;
| 型号： | CGHV40030P |
| 厂家： | 
CREE, INC |
| 描述： | 30 W, DC - 6 GHz, 50V, GaN HEMT |
| 文件： | 总11页 (文件大小：1165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transist
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilitie
The device can be deployed for L, S and C-Band amplifier applications. The datashe
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 5
volt rail circuit while housed in a 2-lead flange or pill package.
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V
Parameter
0.96 GHz
1.1 GHz
1.25 GHz
1.4 GHz
Units
Gain @ PSAT
15.6
15.8
16.6
15.8
dB
Saturated Output Power
Drain Efficiency @ PSAT
Note:
29
62
30
74
36
64
31
67
W
%
Measured CW in the CGHV40030-AMP application circuit.
Features
•
•
•
•
•
•
Up to 6 GHz Operation
30 W Typical Output Power
16 dB Gain at 1.2 GHz
Application circuit for 0.96 - 1.4 GHz
70% Efficiency at PSAT
50 V Operation
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
125
Units
Volts
Volts
˚C
Notes
25˚C
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3,4
Thermal Resistance, Junction to Case5
T
˚C
J
IGMAX
IDMAX
TS
5.2
mA
A
25˚C
25˚C
4.2
245
˚C
TC
-40, +150
5.9
˚C
RθJC
˚C/W
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 Simulated at PDISS = 23.4 W
4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance.
5 CW
Electrical Characteristics (TC = 25˚C) - 50 V Typical
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.8
–
-3.0
-2.6
5.2
–
-2.3
–
VDC
VDC
A
VDS = 10 V, ID = 5.2 mA
VDS = 50 V, ID = 150 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 5.2 mA
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
3.9
125
–
V(BR)DSS
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 1.2 GHz unless otherwise noted)
Power Gain
GP
POUT
η
15.5
30
16
35
65
-
–
-
dB
W
%
VDD = 50 V, IDQ = 150 mA, POUT = PSAT
VDD = 50 V, IDQ = 150 mA, POUT = PSAT
VDD = 50 V, IDQ = 150 mA, POUT = PSAT
Output Power4
Drain Efficiency4
62
No damage at all phase angles,
VDD = 50 V, IDQ = 150 mA, POUT = 30 W CW
Output Mismatch Stress4
VSWR
-
-
10 : 1
Y
Dynamic Characteristics
Input Capacitance5
CGS
CDS
CGD
–
–
–
7.4
2
–
–
–
pF
pF
pF
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
VDS = 50 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
Feedback Capacitance
0.15
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV40030-AMP
4 PSAT is defined as IG = 0.52 mA
5 Includes package
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV40030 Rev 1.0
Typical Performance
Figure 1. - Typical Small Signal Response of CGHV40030-AMP Application Circuit
VDD = 50 V, IDQ = 150 mA
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
S11
S21
S22
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Frequency (GHz)
Figure 2. - Typical Large Signal Response of CGHV40030-AMP Application Circuit
VDD = 50 V, IDQ = 150 mA, PIN = 29 dBm, TCASE = 25°C, CW
48.0
47.5
47.0
46.5
46.0
45.5
45.0
44.5
44.0
43.5
43.0
80
75
70
65
60
55
50
45
40
35
30
Drain Efficiency
Output Power
Output Power
Drain Efficiency
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV40030 Rev 1.0
CGHV40030-AMP Application Circuit
Bill of Materials
CGHV40030-AMP Application Circuit
Designator
Description
Qty
R1
R2
RES,1/16W,0603,1%,187 OHMS
RES, 2.2 OHMS, +/- 1%, 1/16W,0603
RES,1/16W,0603,1%,15.4 OHMS
IND, 5.6nH, 0603
1
1
1
1
2
4
2
2
2
1
2
2
1
1
1
1
R3
L1
C3, C4
C5, C6, C11, C12
C2, C7, C8
C9, C10
C1, C13
C14
CAP, 2.7,+/-0.1pF, 0603, ATC
CAP, 1.2pF,+/-0.1pF, 0603, ATC
CAP 1.8pF,+/-0.1pF 0603, ATC
CAP, 3.9pF,+/-0.1pF 0603, ATC
CAP, 24pF,+/-5% 0603, ATC
CAP 10UF 16V TANTALUM
CAP, 33000pF, 0805, ATC
C15, C20
C16,C21
C17
CAP, 470PF, 5%, 100V, 0603,
CAP, 68pF,+/-0.1pF 0603, ATC
CAP, 56PF +/- 5%, 0603 , ATC600S
CAP, 33UF, 20%, G CASE
C22
C18
C19
CAP, 1.0UF, 100V, 10%, X7R, 1210
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST
J1,J2
J3
2
HEADER RT>PLZ .1CEN LK 5POS
1
1
1
BASEPLATE, CGH35015, 2.60 X 1.7
CGHV40030F/P PCB, RO4350, 0.020” THK
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV40030 Rev 1.0
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (MHz)
Z Source
5.5 + j0.9
2.6 - j1.3
3.8 - j0.9
2.7 - j7.0
2.8 - j13.4
Z Load
500
43 + j20.8
25.5 + j29.1
11.5 + j17.3
6.7 + j7.8
1000
2000
3000
4000
6.5 + j1.7
Note1: VDD = 50 V, IDQ = 150 mA
Note2: Impedances are extracted from source and load pull data derived from the transistor.
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
II (200 < 500 V)
CDM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV40030 Rev 1.0
Typical Package S-Parameters for CGHV40030
(Small Signal, VDS = 50 V, IDQ = 150 mA, angle in degrees)
Frequency
Mag S11
Ang S11
Mag S21
Ang S21
Mag S12
Ang S12
Mag S22
Ang S22
500 MHz
600 MHz
700 MHz
800 MHz
900 MHz
1.0 GHz
1.1 GHz
1.2 GHz
1.3 GHz
1.4 GHz
1.5 GHz
1.6 GHz
1.7 GHz
1.8 GHz
1.9 GHz
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
3.2 GHz
3.4 GHz
3.6 GHz
3.8 GHz
4.0 GHz
4.2 GHz
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
5.2 GHz
5.4 GHz
5.6 GHz
5.8 GHz
6.0 GHz
0.92
0.92
0.91
0.91
0.91
0.91
0.91
0.91
0.91
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.92
0.93
0.93
0.93
0.93
0.93
0.93
0.93
0.94
0.94
0.94
0.94
0.95
0.95
0.95
0.95
0.96
0.96
0.96
0.96
0.96
0.96
0.97
0.97
-135.45
-143.51
-149.71
-154.67
-158.75
-162.21
-165.20
-167.83
-170.19
-172.34
-174.30
-176.13
-177.83
-179.44
179.04
177.58
176.19
174.84
173.54
172.28
171.06
169.86
168.70
167.55
166.43
165.33
163.18
161.08
159.05
157.05
155.10
153.19
151.31
149.46
147.65
145.86
144.11
142.38
140.68
139.00
137.35
21.23
18.06
15.66
13.78
12.27
11.04
10.02
9.15
8.41
7.76
7.20
6.70
6.26
5.86
5.50
5.18
4.89
4.62
4.37
4.14
3.93
3.73
3.55
3.38
3.23
3.08
2.81
2.57
2.36
2.17
2.00
1.85
1.72
1.59
1.48
1.37
1.28
1.19
1.11
1.04
0.98
101.31
95.44
90.50
86.16
82.26
78.67
75.32
72.16
69.14
66.24
63.45
60.74
58.11
55.54
53.03
50.58
48.17
45.81
43.50
41.22
38.98
36.78
34.62
32.49
30.39
28.33
24.29
20.36
16.55
12.85
9.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.02
0.02
0.02
16.50
11.72
7.89
0.32
0.32
0.31
0.32
0.33
0.34
0.35
0.36
0.37
0.39
0.40
0.42
0.43
0.45
0.46
0.48
0.49
0.51
0.52
0.53
0.55
0.56
0.57
0.59
0.60
0.61
0.64
0.66
0.68
0.70
0.72
0.73
0.75
0.76
0.78
0.79
0.80
0.82
0.83
0.84
0.85
-74.10
-79.66
-84.44
4.69
-88.69
1.97
-92.58
-0.41
-2.50
-4.34
-5.98
-7.43
-8.69
-9.77
-10.67
-11.39
-11.90
-12.20
-12.26
-12.07
-11.60
-10.82
-9.70
-8.20
-6.30
-3.97
-1.18
2.04
-96.19
-99.57
-102.79
-105.86
-108.80
-111.64
-114.39
-117.06
-119.65
-122.18
-124.64
-127.05
-129.41
-131.72
-133.98
-136.21
-138.39
-140.53
-142.63
-144.70
-146.73
-150.70
-154.54
-158.26
-161.87
-165.37
-168.77
-172.07
-175.28
-178.39
178.58
175.63
172.76
169.97
167.25
164.60
9.69
18.36
27.05
34.79
41.04
45.73
49.02
51.19
52.48
53.11
53.24
52.98
52.43
51.65
50.70
5.75
2.35
-0.96
-4.18
-7.31
-10.36
-13.33
-16.22
-19.03
-21.76
To download the s-parameters in s2p format, go to the CGHV40030 Product Page and click on the documentation tab.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV40030 Rev 1.0
CGHV40030-AMP Application Circuit Schematic
CGHV40030-AMP Application Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV40030 Rev 1.0
Product Dimensions CGHV40030F (Package Type - 440166 )
Product Dimensions CGHV40030P (Package Type - 440196)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV40030 Rev 1.0
Part Number System
CGHV40030F/P
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
6
30
GHz
W
Flanged/Pill
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV40030 Rev 1.0
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV40030F
GaN HEMT
Each
CGHV40030P
CGHV40030-TB
CGHV40030F-AMP
GaN HEMT
Each
Each
Each
Test board without GaN HEMT
Test board with GaN HEMT installed
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV40030 Rev 1.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV40030 Rev 1.0
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