CMPA25650025F [CREE]

RF/Microwave Amplifier,;


型号：	CMPA25650025F
厂家：	CREE, INC
描述：	RF/Microwave Amplifier,
文件：	总12页 (文件大小：992K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CMPA2560025F

25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

Description

Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility

Transistor (HEMT) based monolithic microwave integrated circuit

(MMIC). GaN has superior properties compared to silicon or gallium

arsenide, including higher breakdown voltage, higher saturated

electron driꢀ velocity and higher thermal conductivity. GaN HEMTs also

oﬀer greater power density and wider bandwidths compared to Si and

GaAs transistors. This MMIC contains a two-stage reactively matched

ampliﬁer enabling very wide bandwidths to be achieved in a small

footprint screw-down package featuring a Copper-Tungsten heat-sink.

PN: CMPA2560025F

Package Type: 780019

Typical Performance Over 2.5 - 6.0 GHz (T_C= 25˚C)

Parameter

2.5 GHz

27.5

4.0 GHz

14.9

6.0 GHz

23.1

Units

Gain

Saturated Output Power, P_SAT

Power Gain @ P_OUT43 dBm

PAE @ P_OUT43 dBm

35.8

177

25.6

23.1

100

16.3

31.5

11.6

30.7

Note:

¹P_SATis deﬁned as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA

Features

Applications

•

24 dB Small Signal Gain

25 W Typical P_SAT

Operation up to 28 V

High Breakdown Voltage

High Temperature Operation

•

Ultra Broadband Ampliﬁers

Fiber Drivers

Test Instrumentation

EMC Ampliﬁer Drivers

Figure 1.

Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

CMPA2560025F

Absolute Maximum Ratings (not simultaneous) at 25˚C

Parameter

Symbol

V_DSS

Rating

Units

VDC

˚C

Drain-source Voltage

Gate-source Voltage

V_GS

-10, +2

-65, +150

225

Storage Temperature

Operating Junction Temperature

Forward Gate Current

Screw Torque

T_STG

˚C

I_G

in-oz

˚C/W

Thermal Resistance, Junction to Case

R_θJC

2.5

Electrical Characteristics (Frequency = 2.5 GHz to 6.0 GHz unless otherwise stated; T_C= 25˚C)

Characteristics

Symbol Min. Typ. Max. Units Conditions

DC Characteristics

Gate Threshold Voltage

Gate Quiescent Voltage

V_(GS)TH

V_(GS)Q

-3.8

–

-3.0

-2.7

100

9.7

-2.3

–

V_DS= 10 V, I_D= 20 mA

V_DD= 28 V, I_D= 1200 mA

V_GS= -8 V, I_D= 20 mA

V_DS= 6.0 V, V_GS= 2.0 V

VDC

Drain-Source Breakdown Voltage V_BD

8.0

–

Saturated Drain Current¹

RF Characteristics²

Small Signal Gain

Input Return Loss

Output Return Loss

Power Output₁

I_DC

–

S21

S11

S22

P_OUT

PAE

G_P

19.5

–

V_DD= 28 V, I_D= 1200 mA

-8

-5

-3

–

V_DD= 28 V, I_D= 1200 mA

–

-8

V_DD= 28 V, I_D= 1200 mA

22.0

12.5

15.5

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 4.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 5.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 6.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 4.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 5.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 6.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 4.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 5.0 GHz

V_DD= 28 V, I_D= 1200 mA, P_IN= 26 dBm, Freq = 6.0 GHz

Power Output₂

–

Power Output₃

–

Power Added Eﬀiciency₁

Power Added Eﬀiciency₂

Power Added Eﬀiciency₃

Power Gain₁

–

17.5

15.0

16.0

18.8

16.3

17.0

–

Power Gain₂

G_P

–

Power Gain₃

G_P

–

No damage at all phase angles,

V_DD= 28 V, I_DQ= 1200 mA, P_IN= 26 dBm

Output Mismatch Stress

VSWR

–

5 : 1

Notes:

¹Scaled from PCM data

²All data CW tested in CMPA2560025F-AMP

Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

CMPA2560025F

Typical Performance

Small Signal Gain vs Frequency

Input & Output Return Losses vs Frequency

-2

S11 Typical

S22 Typical

-4

-6

-8

-10

-12

-14

-16

-18

-20

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Frequency (GHz)

Gain vs Output Power as

a Function of Frequency

Power Gain vs Frequency

Output Power = 44 dBm

Output Power = 43 dBm

2.5 GHz

4.0 GHz

6.0 GHz

²⁶Output Power (dBm)

2.0

2.5

3.0

3.5

4.0

5.0

5.5

6.0

6.5

Frequency⁴(^.5GHz)

Rev 3.1 – April 2020

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CMPA2560025F

Typical Performance

Saturated Output Power Performance (P_SAT) vs Frequency

Frequency (GHz)

P_SAT(dBm)

45.54

P_SAT(W)

35.8

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

Typical Psat (dBm)

44.43

27.7

45.52

35.7

45.74

37.5

44.82

30.4

45.08

32.2

45.07

32.1

44.08

25.6

Note:

P_SATis deﬁned as the RF output power where the device starts

to draw positive gate current in the range of 7-13 mA.

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Frequency (GHz)

Power Added Eﬀiciency vs Output Power

PAE at 43 dBm and 44 dBm Output

Power vs Frequency

as a Function of Frequency

45%

40%

35%

30%

25%

20%

15%

10%

45%

40%

35%

30%

25%

20%

15%

10%

2.5 GHz

4.0 GHz

6.0 GHz

PAE 44 dBm

PAE 43 dBm

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Frequency (GHz)

Output Power, P_OUT(dBm)

Rev 3.1 – April 2020

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CMPA2560025F

Typical Performance

2^NDHarmonic vs Output Power

as a Function of Frequency

IM3 vs Total Average Power

as a Function of Frequency

-10

-20

-30

-40

-50

-60

-70

-5

2.5 GHz

4.0 GHz

6.0 GHz

2.5 GHz

4.0 GHz

6.0 GHz

-10

-15

-20

-25

-30

-35

-40

-45

-50

-55

-60

Output Power, P_OUT(dBm)

Total Average Output Power (dBm)

Gain at P_OUTof 40 dBm at

25°C & 75°C vs Frequency

Ambient (25°C)

Hot (75°C)

2.5

2.8

3.1

3.4

3.7

4.0

Frequency (GHz)

Note: The temperature coeﬀicient is -0.05 dB/°C

Rev 3.1 – April 2020

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CMPA2560025F

General Device Information

The CMPA2560025F is a two stage GaN HEMT MMIC Power Ampliﬁer, which operates between 2.5- 6.0 GHz. The ampliﬁer typically

provides 25 dB of small signal gain and 25 W saturated output power with an associated power added eﬀiciency of better than

30 %. The wideband ampliﬁer’s input and output are internally matched to 50 Ohm. The ampliﬁer requires bias from dedicated

ports. The RF-input and output both require an external DC-block. DC voltage should not be applied to the RF output pin due to

the internal matching elements. The two gate pins, G1 and G2, are internally connected so it is suﬀicient to apply bias to only one

of them. The drain pins, D1 and D2, should both be connected to the drain supply. The component has internal DC-decoupling on

the gate and drain pins, 1840pF and 920pF respectively. The test ﬁxture also provides extra decoupling capacitors on all supply

lines. Details of these components can be found on the bill of materials.

The CMPA2560025F is provided in a lead-less package format. The input and output connections are gold plated to enable gold

bond wire attach at the next level assembly.

The measurements in this data sheet were taken on devices wire-bonded to the test ﬁxture with 2 mil gold bond wires. All losses

associated with the test ﬁxture are included in the measurements.

Electrostatic Discharge (ESD) Classifications

Parameter

Symbol

Class

Test Methodology

Human Body Model

Charge Device Model

HBM

CDM

1A (> 250 V)

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

II (200 < 500 V)

Rev 3.1 – April 2020

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CMPA2560025F

CMPA2560025F CW Power Dissipation De-rating Curve

Note 1

100

150

200

250

Maximum Case Temperature (C)

Note 1: Area exceeds Maximum Case Operating Temperature (See Page 2)

Rev 3.1 – April 2020

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CMPA2560025F

CMPA2560025F-AMP Demonstration Amplifier Circuit

CMPA2560025F-AMP Demonstration Amplifier Circuit Outline

Rev 3.1 – April 2020

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CMPA2560025F

CMPA2560025F-AMP Demonstration Amplifier Circuit Bill of Materials

Designator

Description

Qty

J1,J2

CONNECTOR, SMA, AMP1052901-1

HEADER, RT. PLZ. 1, CEN LK, 5 POS

CAP, 2400 pF, BROADBAND BLOCK, C08BL242X-5UN-X0T 2

CAP, 0.1 UF, +/- 10 % , 0805

RES, 0 OHM, 1206

C1,C2,C3

C4,C5,C6

PCB, TACONIC, RF-35-0100-CH/CH

CMPA2560025F

Notes:

¹The CMPA2560025F is connected to the PCB with 2.0 mil Au bond wires

²An external DC Block is required on the input and output

Product Dimensions CMPA2560025F (Package Type — 780019)

Rev 3.1 – April 2020

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CMPA2560025F

Part Number System

CMPA2560025F

Package

Power Output (W)

Upper Frequency (GHz)

Lower Frequency (GHz)

Cree MMIC Power Ampliﬁer Product Line

Table 1.

Parameter

Lower Frequency

Upper Frequency¹

Power Output

Package

Value

13.75

14.5

Units

GHz

Flange

Note¹: Alpha characters used in frequency code indicate a value

greater than 9.9 GHz. See Table 2 for value

Table 2.

Character Code

Code Value

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Rev 3.1 – April 2020

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CMPA2560025F

Product Ordering Information

Order Number

Description

Unit of Measure

Image

CMPA25650025F

GaN HEMT

Each

CMPA2560025F-AMP

Test board with GaN HEMT installed

Each

Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

CMPA2560025F

For more information, please contact:

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.wolfspeed.com/RF

Sales Contact

RFSales@wolfspeed.com

RF Product Marketing Contact

RFMarketing@wolfspeed.com

Notes

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet

to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights

of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-

ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for

information purposes only. These values can and do vary in diﬀerent applications and actual performance can vary over

time. All operating parameters should be validated by customer’s technical experts for each application. Cree products

are not designed, intended or authorized for use as components in applications intended for surgical implant into the

body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury

or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

Rev 3.1 – April 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

CMPA25650025F [CREE]

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