CMPA2735015D [CREE]
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier;
| 型号： | CMPA2735015D |
| 厂家： | 
CREE, INC |
| 描述： | 15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier |
| 文件： | 总9页 (文件大小：537K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMPA2735015D
15 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735015D is a gallium nitride (GaN) High Electron Mobil
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC
GaN has superior properties compared to silicon or gallium arsenide, includin
higher breakdown voltage, higher saturated electron drift velocity and highe
thermal conductivity. GaN HEMTs also offer greater power density and wide
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier design approach enabling very wide
bandwidths to be achieved.
Typical Performance Over 2.7-3.5 GHz (TC = 25˚C)
Parameter
2.7 GHz
36
2.9 GHz
35
3.1 GHz
35
3.3 GHz
35
3.5 GHz
35
Units
dB
W
Small Signal Gain
Output Power1
Power Gain1
PAE1
20
22
26
27
26
27
27
28
28
28
dB
%
51
57
54
52
52
Note1: PIN = 16 dBm, Pulse Width = 500 μs; Duty Cycle = 10%
Features
Applications
•
•
•
•
35 dB Small Signal Gain
20 W Typical PSAT
•
Civil and Military Pulsed Radar Amplifiers
Operation up to 50 V
High Breakdown Voltage
•
•
High Temperature Operation
Size 0.118 x 0.071 x 0.004 inches
Subject to change without notice.
www.cree.com/wireless
1
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
VDSS
Rating
150
Units
VDC
VDC
˚C
Drain-source Voltage
Gate-source Voltage
VGS
-10, +2
-65, +150
225
Storage Temperature
TSTG
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)
Mounting Temperature (30 seconds)
T
˚C
J
RθJC
TS
-
˚C/W
˚C
260
Electrical Characteristics (Frequency = 2.7 GHz to 3.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics
Gate Threshold Voltage
VGS(TH)
VGS(Q)
IDS
-3.8
–
-3.0
-2.7
3.0
-2.3
–
V
VDC
A
VDS = 10 V, ID = 3 mA
VDD = 50 V, IDQ = 80 mA,
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 3 mA
Gate Quiescent Voltage
Saturated Drain Current1
Drain-Source Breakdown Voltage
–
–
VBD
–
150
–
V
RF Characteristics2
Small Signal Gain1
S21
S21
S21
POUT
POUT
POUT
PAE
PAE
PAE
GP
–
–
–
–
–
–
–
–
–
–
–
–
36
35
35
21
28
27
54
57
55
27
8
–
–
–
–
–
–
–
–
–
–
–
–
dB
dB
dB
W
VDD = 50 V, IDQ = 80 mA, Frequency = 2.7 GHz
VDD = 50 V, IDQ = 80 mA, Frequency = 3.1 GHz
VDD = 50 V, IDQ = 80 mA, Frequency = 3.5 GHz
VDD = 50 V, IDQ = 80 mA, PIN = 16 dBm, Frequency = 2.7 GHz
VDD = 50 V, IDQ = 80 mA, PIN = 16 dBm, Frequency = 3.1 GHz
VDD = 50 V, IDQ = 80 mA, PIN = 16 dBm, Frequency = 3.5 GHz
VDD = 50 V, IDQ = 80 mA, Frequency = 2.7 GHz
VDD = 50 V, IDQ = 80 mA, Frequency = 3.1 GHz
VDD = 50 V, IDQ = 80 mA, Frequency = 3.5 GHz
VDD = 50 V, IDQ = 80 mA
Small Signal Gain2
Small Signal Gain3
Power Output1
Power Output2
W
Power Output3
W
Power Added Efficiency1
Power Added Efficiency2
Power Added Efficiency3
Power Gain
%
%
%
dB
dB
dB
Input Return Loss
Output Return Loss
S11
S22
V
V
DD = 50 V, IDQ = 80 mA
DD = 50 V, IDQ = 80 mA
8
No damage at all phase angles, VDD = 50 V, IDQ = 80 mA,
POUT = 15W Pulsed
Y
Output Mismatch Stress
VSWR
–
–
10 : 1
Notes:
1 Scaled from PCM data.
2 All data pulse tested on-wafer with Pulse Width = 10 μs, Duty Cycle = 1%.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
2
CMPA2735015D Rev 0.0
Die Dimensions (units in microns)
Die Assembly Notes:
•
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure application note at
http://www.cree.com/RF/Document-Library
•
•
•
•
•
•
Vacuum collet is the preferred method of pick-up.
The backside of the die is the Source (ground) contact.
Die back side gold plating is 5 microns thick minimum.
Thermosonic ball or wedge bonding are the preferred connection methods.
Gold wire must be used for connections.
Use the die label (XX-YY) for correct orientation.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
3
CMPA2735015D Rev 0.0
Block Diagram Showing Additional Capacitors & Output
Matching Section for Operation Over 2.7 to 3.5 GHz
Designator
Description
CAP, 10pF, 100V, 0402
CAP, 100pF, 100V, 0603
Quantity
C1,C4,C9,C12
4
C2,C5
C3,C6,C8,C11
C7
2
4
1
1
2
CAP, 470pF, 100V, 0603
CAP, 33uF, 50V, ELECT, MVY, SMD
CAP, 10uF, 16V, TANTALUM, SMD
RES, 100Ohm, 1/16W, 0603
C12
R1,R2
Notes:
1 The input, output and decoupling capacitors should be attached as close as possible to the die- typical
distance is 40 to 50 mils.
2 The MMIC die and capacitors should be connected with 1 mil gold bond wires.
Cree, Inc.
4600 Silicon Drive
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
4
CMPA2735015D Rev 0.0
Typical Performance
Figure 1. - Gain and Input Return Loss vs Frequency
VDD = 50 V, IDQ = 0.08 A
Figure 2. - Output Power and PAE vs Frequency
VDD = 50 V, IDQ = 0.08 A, PIN = 16 dBm, Pulse Width = 500 μs, Duty Cycle = 10%
Cree, Inc.
4600 Silicon Drive
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/RF
5
CMPA2735015D Rev 0.0
Typical Performance
Figure 3. - Associated Gain vs Frequency
VDD = 50 V, IDQ = 0.08 A, PIN = 16 dBm
Pulse Width = 500 μs, Duty Cycle = 10%
Figure 4. - Gain and Power Added Efficiency vs Output Power
VDD = 50 V, IDQ = 0.08 A, Frequency = 3.1 GHz
Pulse Width = 500 μs, Duty Cycle = 10%
Cree, Inc.
4600 Silicon Drive
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/RF
6
CMPA2735015D Rev 0.0
Part Number System
CMPA2735015D
Package
Power Output (W)
Upper Frequency (GHz)
Lower Frequency (GHz)
Cree MMIC Power Amplifier Product Line
Parameter
Value
Units
Lower Frequency
Upper Frequency
Power Output
Package
2.7
3.5
GHz
GHz
W
15
Bare Die
-
Table 1.
Note: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
7
CMPA2735015D Rev 0.0
Product Ordering Information
Order Number
Description
Unit of Measure
CMPA2735015D
GaN MMIC
Each
Cree, Inc.
4600 Silicon Drive
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/RF
8
CMPA2735015D Rev 0.0
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes
no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the
average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in
different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical
experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for
surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal
injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE
logo are registered trademarks of Cree, Inc.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
www.cree.com/RF
9
CMPA2735015D Rev 0.0
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