CN13146 [CREE]

Mira series;


型号：	CN13146
厂家：	CREE, INC
描述：	Mira series
文件：	总6页 (文件大小：290K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Cree^®TR2436™ LEDs

Data Sheet

CxxxTR2436-Sxx00

Cree’sꢀTR™ꢀLEDsꢀareꢀtheꢀnewestꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefﬁcientꢀInGaNꢀmaterialsꢀ

withꢀCree’sꢀproprietaryꢀdeviceꢀtechnologyꢀandꢀsiliconꢀcarbideꢀsubstratesꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀtheꢀLCDꢀsideviewꢀ

market.ꢀTheꢀTRꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀsideviewꢀmarketꢀwhileꢀdeliveringꢀaꢀlowꢀforwardꢀvoltageꢀresultingꢀ

inꢀaꢀveryꢀbrightꢀandꢀhighlyꢀefﬁcientꢀsolutionꢀforꢀtheꢀ0.4-mm,ꢀ0.6-mmꢀandꢀ0.8-mmꢀsideviewꢀmarket.ꢀTheꢀdesignꢀisꢀ

optimallyꢀsuitedꢀforꢀindustryꢀstandardꢀsideviewꢀpackagesꢀasꢀitꢀisꢀdieꢀattachableꢀwithꢀclearꢀepoxyꢀandꢀhasꢀtwoꢀtopꢀ

contacts,ꢀconsistentꢀwithꢀindustryꢀstandardꢀpackaging.

FEATURES

APPLICATIONS

•ꢀ RectangularꢀLEDꢀRfꢀPerformance

−ꢀ 450ꢀ&ꢀ460ꢀnmꢀ–ꢀ30+ꢀmW

−ꢀ 470ꢀnmꢀ–ꢀ27+ꢀmW

•ꢀ SmallꢀLCDꢀBacklightingꢀ–ꢀ0.8ꢀmm,ꢀ0.6ꢀmmꢀ&ꢀꢀꢀꢀꢀꢀꢀ

0.4ꢀmmꢀsideviewꢀpackages

−ꢀ MobileꢀAppliances

−ꢀ 527ꢀnmꢀnmꢀ–ꢀ10+ꢀmW

−ꢀ DigitalꢀCameras

•ꢀ EpoxyꢀDieꢀAttach

−ꢀ CarꢀNavigationꢀSystems

•ꢀ MediumꢀLCDꢀBacklightingꢀ–ꢀ0.8ꢀmm,ꢀ0.6ꢀmmꢀ&ꢀꢀꢀꢀ

0.4ꢀmmꢀsideviewꢀpackages

−ꢀ PortableꢀPCs

•ꢀ LowꢀForwardꢀVoltageꢀ-ꢀ3.1ꢀVꢀTypicalꢀatꢀ20ꢀmA

•ꢀ 1000-VꢀESDꢀThresholdꢀRating

•ꢀ InGaNꢀJunctionꢀonꢀThermallyꢀConductiveꢀSiCꢀ

Substrate

−ꢀ Monitors

•ꢀ LEDꢀVideoꢀDisplays

•ꢀ EntertainmentꢀSystems

CxxxTR2436-Sxx00 Chip Diagram

ꢀ

Bottom View

Die Cross Section

Top View

Backside

GoldꢀBondꢀPad

Anodeꢀ(+)

90ꢀμmꢀDiameter

BottomꢀSurface

140ꢀxꢀ260ꢀμm

TR2436ꢀLED

240ꢀxꢀ360ꢀμm

GoldꢀBondꢀPad

Cathodeꢀ(-)

98ꢀxꢀ98ꢀμm

tꢀ=ꢀ115ꢀμm

Subject to change without notice.

www.cree.com

Maximum Ratings at T_A= 25°C^{Notes 1&3}

DCꢀForwardꢀCurrent

CxxxTR2436-Sxx00

30ꢀmA

PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)

LEDꢀJunctionꢀTemperature

100ꢀmA

125°C

ReverseꢀVoltage

5ꢀV

OperatingꢀTemperatureꢀRange

-40°Cꢀtoꢀ+100°C

-40°Cꢀtoꢀ+120°C

≤30°Cꢀ/ꢀ≤85%ꢀRH

1000ꢀV

LEDꢀChipꢀStorageꢀTemperature

DieꢀSheetꢀStorageꢀConditions

ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀ^Noteꢀ2

ElectrostaticꢀDischargeꢀClassiﬁcationꢀ(MIL-STD-883E)ꢀ^Noteꢀ2

Classꢀ2

Note 3

Typical Electrical/Optical Characteristics at T_A= 25°C, If = 20 mA

Reverse Current

[I(Vr=5V), μA]

Full Width Half Max

Part Number

Forward Voltage (V_f, V)

(λ_D, nm)

Min.

Typ.

3.1

3.2

Max.

Typ.

C450TR2436-Sxx00

C460TR2436-Sxx00

C470TR2436-Sxx00

C527TR2436-Sxx00

2.7

2.9

3.4

3.6

Mechanical Speciﬁcations

Description

CxxxTR2436-Sxx00

Dimension

Tolerance

±35

P-NꢀJunctionꢀAreaꢀ(μm)

ChipꢀAreaꢀ(μm)

200ꢀxꢀ320

240ꢀxꢀ360

115

±35

ChipꢀThicknessꢀ(μm)

±15

AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)

AuꢀBondꢀPadꢀThicknessesꢀ(μm)

AuꢀBondꢀPadꢀAreaꢀCathodeꢀ(μm)

BottomꢀAreaꢀꢀ(μm)

-5,ꢀ+15

±0.5

1.0

98ꢀxꢀ98

140ꢀxꢀ260

-5,ꢀ+15

±35

Notes:

1.ꢀ Maximumꢀratingsꢀareꢀpackageꢀdependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀT-1ꢀ3/4ꢀpackageꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀ

encapsulationꢀandꢀclearꢀepoxyꢀdieꢀattach)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀ

andꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀbutꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀ

limitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspeciﬁcꢀpackageꢀtoꢀdetermineꢀ

limitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).

2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ

energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.

3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspeciﬁcationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ

andꢀoperatedꢀatꢀ20ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfﬁciencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ

areꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀ

measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀclearꢀepoxyꢀdieꢀattach).ꢀ

OpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀusingꢀIlluminanceꢀE.

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.

Durham, NC 27703-8475 USA

Tel: +1-919-313-5300

Fax: +1-919-313-5870

www.cree.com/chips

CPR3DR Rev B

Standard Bins for CxxxTR2436-Sxx00

LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant ﬂuxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀfromꢀ

onlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxTR2436-Sxxxx)ꢀordersꢀmayꢀbeꢀﬁlledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxTR2436-xxxx)ꢀcontainedꢀ

inꢀtheꢀkit.ꢀAllꢀradiantꢀﬂuxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspeciﬁedꢀareꢀatꢀIfꢀ=ꢀ20ꢀmA.

TR 450 nm Kits

C450TR2436-S3000

C450TR2436-0317

C450TR2436-0313

C450TR2436-0309

C450TR2436-0305

C450TR2436-0318

C450TR2436-0314

C450TR2436-0310

C450TR2436-0306

C450TR2436-0319

C450TR2436-0315

C450TR2436-0311

C450TR2436-0307

C450TR2436-0320

C450TR2436-0316

C450TR2436-0312

C450TR2436-0308

455

445

447.5

450

452.5

Dominant Wavelength (nm)

TR 460 nm Kits

C460TR2436-S3000

C460TR2436-0317

C460TR2436-0313

C460TR2436-0309

C460TR2436-0305

C460TR2436-0318

C460TR2436-0314

C460TR2436-0310

C460TR2436-0306

C460TR2436-0319

C460TR2436-0320

C460TR2436-0316

C460TR2436-0312

C460TR2436-0308

C460TR2436-0315

C460TR2436-0311

C460TR2436-0307

465

455

457.5

460

Dominant Wavelength (nm)

462.5

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.

Durham, NC 27703-8475 USA

Tel: +1-919-313-5300

Fax: +1-919-313-5870

www.cree.com/chips

CPR3DR Rev B

Standard Bins for CxxxTR2436-Sxx00 (continued)

TR 470 nm Kits

C470TR2436-S2700

C470TR2436-0313

C470TR2436-0309

C470TR2436-0305

C470TR2436-0301

C470TR2436-0314

C470TR2436-0310

C470TR2436-0306

C470TR2436-0302

C470TR2436-0315

C470TR2436-0311

C470TR2436-0307

C470TR2436-0303

C470TR2436-0316

C470TR2436-0312

C470TR2436-0308

C470TR2436-0304

475

465

467.5

470

472.5

Dominant Wavelength

TR 527 nm Kits

C527TR2436-S1000

C527TR2436-0307

C527TR2436-0304

C527TR2436-0301

C527TR2436-0308

C527TR2436-0309

C527TR2436-0306

C527TR2436-0303

C527TR2436-0305

C527TR2436-0302

520

525

530

535

Dominant Wavelength

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.

Durham, NC 27703-8475 USA

Tel: +1-919-313-5300

Fax: +1-919-313-5870

www.cree.com/chips

CPR3DR Rev B

Characteristic Curves

TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀTRꢀLEDꢀproduct.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀradiantꢀ

ﬂuxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ

Wavelength Shift vs. Forward Current

Forward Current vs. Forward Voltage

100

-5

-10

-15

100

Vf (V)

If (mA)

Relative Intensity vs Peak Wavelength

Relative Intensity vs. Forward Current

120

100

400%

300%

200%

100%

100

320

420

520

620

If (mA)

Wavelength (nm)

Cree, Inc.

4600 Silicon Drive

and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.

Durham, NC 27703-8475 USA

Tel: +1-919-313-5300

Fax: +1-919-313-5870

www.cree.com/chips

CPR3DR Rev B

Radiation Pattern

ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀTRꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703-8475 USA

Tel: +1-919-313-5300

and the Cree logo are registered trademarks, and TR and TR2436 are trademarks of Cree, Inc.

Fax: +1-919-313-5870

www.cree.com/chips

CPR3DR Rev B

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