CXXXTR5050M-SXX000 [CREE]
High-Reliability Eutectic, Solder Paste or Preforms; 高可靠性的共晶焊膏或预成型
| 型号： | CXXXTR5050M-SXX000 |
| 厂家： | 
CREE, INC |
| 描述： | High-Reliability Eutectic, Solder Paste or Preforms |
| 文件： | 总5页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TR5050M™ LEDs
CxxxTR5050M-Sxx000
Data Sheet
Cree’sꢀTR5050MꢀLEDsꢀareꢀtheꢀnextꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀInGaNꢀmaterialsꢀ
withꢀCree’sꢀproprietaryꢀdeviceꢀtechnologyꢀandꢀsilicon-carbideꢀsubstratesꢀtoꢀdeliverꢀsuperiorꢀvalueꢀforꢀtheꢀTV-backlightingꢀ
andꢀgeneral-illuminationꢀmarkets.ꢀTheꢀTR5050MꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀtop-viewꢀmarketꢀwhileꢀdeliveringꢀ
aꢀlowꢀforwardꢀvoltage,ꢀresultingꢀinꢀaꢀveryꢀbrightꢀandꢀhighlyꢀefficientꢀsolution.ꢀTheꢀmetalꢀbacksideꢀallowsꢀforꢀeutecticꢀ
dieꢀattachꢀandꢀenablesꢀsuperiorꢀperformanceꢀfromꢀimprovedꢀthermalꢀmanagement.ꢀTheꢀdesignꢀisꢀoptimallyꢀsuitedꢀforꢀ
industry-standardꢀtop-viewꢀpackages.
FEATURES
APPLICATIONS
•ꢀ RectangularꢀLEDꢀRFꢀPerformance
–ꢀ 450ꢀnmꢀ–ꢀ180ꢀmWꢀmin
•ꢀ LargeꢀLCDꢀBacklightingꢀ
–ꢀ Television
•ꢀ High-Reliabilityꢀ–ꢀEutectic,ꢀSolderꢀPasteꢀorꢀPreformsꢀ •ꢀ GeneralꢀIllumination
Attach
•ꢀ MediumꢀLCDꢀBacklightingꢀ
–ꢀ PortableꢀPCs
•ꢀ LowꢀForwardꢀVoltageꢀ–ꢀ3.3ꢀVꢀTypicalꢀatꢀ120ꢀmA
•ꢀ MaximumꢀDCꢀForwardꢀCurrentꢀ-ꢀ200ꢀmA
•ꢀ Classꢀ2ꢀESDꢀRating
–ꢀ Monitors
•ꢀ LEDꢀVideoꢀDisplays
•ꢀ WhiteꢀLEDs
•ꢀ InGaNꢀJunctionꢀonꢀThermallyꢀConductiveꢀSiCꢀ
Substrate
CxxxTR5050M-Sxx000 Chip Diagram
ꢀ
Die Cross Section
Bottom View
Top View
TR5050MꢀLED
500ꢀxꢀ500ꢀμm
Cathodeꢀ(-)
98-μmꢀdiameter
BottomꢀSurface
320ꢀxꢀ320ꢀμm
Anodeꢀ(+)
90-μmꢀdiameter
Metalꢀbackside
288ꢀxꢀ288ꢀμm
tꢀ=ꢀ175ꢀμm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1&3
DCꢀForwardꢀCurrentꢀNoteꢀ4
CxxxTR5050M-Sxx000
200ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
250ꢀmA
150°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
1000ꢀV
StorageꢀTemperatureꢀRange
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2
Classꢀ2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
2.7
Typ.
Max.
3.5
Max.
Typ.
C450TR5050M-Sxx000
3.3
2
20
Mechanical Specifications
Description
CxxxTR5050M-Sxx000
Dimension
Tolerance
±35ꢀ
P-NꢀJunctionꢀAreaꢀ(μm)ꢀ
ChipꢀAreaꢀ(μm)ꢀ
426ꢀxꢀ443ꢀ
500ꢀxꢀ500ꢀ
175ꢀ
±35ꢀ
ChipꢀThicknessꢀ(μm)ꢀ
±15ꢀ
AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)ꢀ
AuꢀBondꢀPadꢀThicknessesꢀ(μm)ꢀ
AuꢀBondꢀPadꢀDiamaterꢀCathodeꢀ(μm)ꢀ
BottomꢀContactꢀMetalꢀ(um)
BottomꢀAreaꢀ(μm)ꢀ
90ꢀ
±10ꢀ
1.0ꢀ
±0.5ꢀ
±10ꢀ
98ꢀ
288ꢀxꢀ288
320ꢀxꢀ320
3.0
±25
±45
BottomꢀContactꢀMetalꢀThicknessꢀ(μm)
±1.0
Notes:
1.ꢀ Maximumꢀ ratingsꢀ areꢀ package-dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ lampsꢀ inꢀ chip-on-MCPCBꢀ (metalꢀ coreꢀ PCB)ꢀ packagesꢀ forꢀ
characterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀJunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀ
Assemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀenergyꢀtestꢀ(RAET).ꢀ
TheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀandꢀoperatedꢀatꢀ120ꢀ
mAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀareꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀ
expectedꢀbyꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀmeasurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ
(withꢀHysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀclearꢀepoxyꢀdieꢀattach).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀusingꢀIlluminanceꢀE.
4.ꢀ TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀtheꢀend-productꢀtoꢀbeꢀ
designedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀoptimizeꢀproductꢀperformance.
250
200
150
Rth j-a = 10 C/W
Rth j-a = 20 C/W
100
50
0
Rth j-a = 30 C/W
Rth j-a = 40 C/W
50
75
100
125
150
175
Ambient Temperature (C)
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTMꢀandꢀTR5050MꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
2
CPR3EX Rev. -
Standard Bins for CxxxTR5050M-Sxx000
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant flux and dominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀ
fromꢀonlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxTR5050M-Sxxxx)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxTR5050M-xxxx)ꢀ
containedꢀinꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ120ꢀmA.ꢀ
450TR5050M-S18000
C450TR5050M-0213
C450TR5050M-0209
C450TR5050M-0205ꢀ
C450TR5050M-0214
C450TR5050M-0210ꢀ
C450TR5050M-0206
C450TR5050M-0215
C450TR5050M-0211ꢀ
C450TR5050M-0207
C450TR5050M-0216
C450TR5050M-0212
C450TR5050M-0208ꢀ
220.0
200.0
180.0
455
445
447.5
450
Dominant Wavelength (nm)
452.5
Note:ꢀTheꢀradiant-fluxꢀvaluesꢀaboveꢀareꢀrepresentativeꢀofꢀtheꢀdieꢀinꢀaꢀCreeꢀ5-mmꢀlamp.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTMꢀandꢀTR5050MꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
3
CPR3EX Rev. -
Characteristic Curves
TheseꢀareꢀrepresentativeꢀmeasurementsꢀforꢀtheꢀTR5050MꢀLEDꢀproduct.ꢀActualꢀcurvesꢀwillꢀvaryꢀslightlyꢀforꢀtheꢀvariousꢀ
radiantꢀfluxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ
Forward Current vs. Forward Voltage
Wavelength Shift vs. Forward Current
250
200
150
100
50
3
2
1
0
-1
-2
-3
0
0
1
2
3
4
5
0
50
100
150
200
Vf (V)
If (mA)
Voltage Shift vs Junction Temperature
Relative Intensity vs. Forward Current
200%
150%
100%
50%
0.000
-0.050
-0.100
-0.150
-0.200
-0.250
-0.300
-0.350
-0.400
0%
25
50
75
100
125
150
0
50
100
150
200
If (mA)
Junction Temperature (°C)
Relative Light Intensity Vs Junction Temperature
Dominant Wavelength Shift vs Junction Temp
100%
95%
90%
85%
80%
75%
70%
6
5
4
3
2
1
0
-1
-2
25
50
75
100
125
150
25
50
75
100
125
150
Junction Temperature (°C)
Junction Temperature (°C)
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTMꢀandꢀTR5050MꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
4
CPR3EX Rev. -
Radiation Pattern
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀTR5050MꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.
Cree,ꢀInc.
4600ꢀSiliconꢀDrive
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTMꢀandꢀTR5050MꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ
Durham,ꢀNCꢀ27703
USAꢀTel:ꢀ+1.919.313.5300
www.cree.com
5
CPR3EX Rev. -
相关型号：
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