E3M0120090D_技术文档

V_DS

I_D

900 V

23 A

@

25˚C

E3M0120090D

R_DS(on)

120 mΩ

Silicon Carbide Power MOSFET

E-SeriesAutomotive

N-Channel Enhancement Mode

Features

Package

•

3rd generation SiC MOSFET technology

High blocking voltage with low On-resistance

High speed switching with low capacitances

Fast intrinsic diode with low reverse recovery (Qrr)

Halogen free, RoHS compliant

Automotive Qualiﬁed (AEC-Q101) and PPAP Capable

Beneﬁts

•

Higher system efﬁciency

Reduced cooling requirements

Increased power density

Increased system switching frequency

Applications

•

Automotive EV battery chargers

Renewable energy

High voltage DC/DC converters

Marking

E3M0120090

Part Number

E3M0120090D

Package

TO-247-3

Maximum Ratings (T_C= 25 ˚C unless otherwise speciﬁed)

Parameter

Value

Unit

Test Conditions

Note

Symbol

V_GS= 0 V, I_D= 100 μA

Drain - Source Voltage

Gate - Source Voltage

900

-8/+18

-4/+15

23

V

V_DSmax

V_GSmax

V_GSop

Note: 1

Note: 2

Fig. 19

Gate - Source Voltage (Recommended operating values)

V_GS= 15 V, T_C= 25˚C

V_GS= 15 V, T_C= 100˚C

Continuous Drain Current

A

I_D

15

Pulsed Drain Current

50

97

A

Fig. 22

Fig. 20

I_D(pulse)

Pulse width t_Plimited by T_jmax

Power Dissipation

W

˚C

T_C=25˚C, T = 150 ˚C

P_D

J

-55 to

+150

Operating Junction and Storage Temperature

Solder Temperature

T , T_stg

J

1.6mm (0.063”) from case for

10s

260

T_L

1

8.8

Nm

lbf-in

Mounting Torque

M3 or 6-32 screw

M_d

Note (1): When using MOSFET Body Diode V_GSmax= -4V/+18V

Note (2): MOSFET can also safely operate at 0/+15 V

1

E3M0120090D Rev. - , 07-2018

Electrical Characteristics (T_C= 25˚C unless otherwise speciﬁed)

Symbol

Parameter

Min.

900

1.7

Typ.

Max. Unit

Test Conditions

Note

V_(BR)DSS

Drain-Source Breakdown Voltage

V

V_GS= 0 V, I_D= 100 μA

2.1

1.6

1

3.5

V_DS= V_GS, I_D= 3 mA

V

V_GS(th)

Gate Threshold Voltage

Fig. 11

V_DS= V_GS, I_D= 3 mA, T_J= 150ºC

V_DS= 900 V, V_GS= 0 V

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

100

250

155

μA

nA

10

V_GS= 15 V, V_DS= 0 V

120

170

7.7

6.7

V_GS= 15 V, I_D= 15 A

Fig. 4,

5, 6

R_DS(on)

Drain-Source On-State Resistance

Transconductance

mΩ

V_GS= 15 V, I_D= 15 A, T_J= 150ºC

V_DS= 20 V, I_DS= 15 A

g_fs

S

Fig. 7

V_DS= 20 V, I_DS= 15 A, T_J= 150ºC

C_iss

C_oss

C_rss

E_oss

Input Capacitance

350

40

3

Fig. 17,

18

V_GS= 0 V, V_DS= 600 V

Output Capacitance

Reverse Transfer Capacitance

C_ossStored Energy

pF

f = 1 MHz

AC

V

= 25 mV

9

μJ

Fig. 16

E_ON

Turn-On Switching Energy (Body Diode FWD)

170

V_DS= 400 V, V_GS= -4 V/15 V, I_D= 15 A,

R_G(ext)= 2.5Ω, L= 142 μH, T_J= 150ºC

Fig. 26,

29

E_OFF

t_d(on)

t_r

Turn Off Switching Energy (Body Diode FWD)

Turn-On Delay Time

25

27

10

V_DD= 400 V, V_GS= -4 V/15 V

I_D= 15 A, R_G(ext)= 2.5 Ω,

Timing relative to V_DS

Inductive load

Rise Time

Fig. 27,

29

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

25

8

,

R_G(int)

Q_gs

Q_gd

Q_g

Internal Gate Resistance

Gate to Source Charge

Gate to Drain Charge

Total Gate Charge

16

4.8

Ω

f = 1 MHz V_AC= 25 mV

V_DS= 400 V, V_GS= -4 V/15 V

I_D= 15 A

5.0

nC

Fig. 12

Per IEC60747-8-4 pg 21

17.3

(T = 25˚C unless otherwise speciﬁed)

Reverse Diode Characteristics

C

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

4.8

V

V_GS= -4 V, I_SD= 7.5 A

Fig. 8,

9, 10

V_SD

Diode Forward Voltage

4.4

V_GS= -4 V, I_SD= 7.5 A, T = 150 °C

J

I_S

I_{S, pulse}

t_rr

Continuous Diode Forward Current

Diode pulse Current

21

50

A

V_GS= -4 V, T_C= 25˚C

Note 1

A

V_GS= -4 V, pulse width t_Plimited by T_jmax

Reverse Recover time

24

ns

V_GS= -4 V, I_SD= 7.5 A, V_R= 400 V

Note 1

Q_rr

I_rrm

Reverse Recovery Charge

115

6.2

nC

A

dif/dt = 900 A/µs, T = 150 °C

J

Peak Reverse Recovery Current

Thermal Characteristics

Symbol

R_θJC

Parameter

Max.

1.3

Unit

Test Conditions

Note

Thermal Resistance from Junction to Case

°C/W

Fig. 21

R_θJA

Thermal Resistance From Junction to Ambient

40

Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode

2

E3M0120090D Rev. - , 07-2018

Typical Performance

45

40

35

30

25

20

15

10

5

V_GS= 15 V

Conditions:

T_J= -55 °C

Conditions:

T_J= 25 °C

tp = < 200 µs

V_GS= 15 V

40

tp = < 200 µs

35

V_GS= 13 V

V_GS= 11 V

30

25

20

15

10

5

V_GS= 11 V

V_GS= 9 V

V_GS= 7 V

0

2

4

6

8

10

11

0

2

4

6

8

10

11

Drain-Source Voltage, V_DS(V)

Figure 1. Output Characteristics T_J= -55 ºC

Figure 2. Output Characteristics T_J= 25 ºC

45

40

35

30

25

20

15

10

5

2.5

2.0

1.5

1.0

0.5

0.0

V_GS= 15 V

Conditions:

T_J= 150 °C

tp = < 200 µs

Conditions:

I_DS= 15 A

V_GS= 15 V

t_p< 200 µs

V_GS= 13 V

V_GS= 11 V

V_GS= 9 V

V_GS= 7 V

0

-50

-25

0

25

50

75

100

125

150

0

2

4

6

8

10

11

Junction Temperature, T_J(°C)

Drain-Source Voltage, V_DS(V)

Figure 3. Output Characteristics T_J= 150 ºC

Figure 4. Normalized On-Resistance vs. Temperature

300

275

250

225

200

175

150

125

100

75

250

225

200

175

150

125

100

75

Conditions:

I_DS= 15 A

t_p< 200 µs

Conditions:

V_GS= 15 V

t_p< 200 µs

T_J= 150 °C

V_GS= 11 V

T_J= -55 °C

T_J= 25 °C

V_GS= 13 V

V_GS= 15 V

50

25

0

5

10

15

20

25

30

35

40

45

-50

-25

0

25

50

75

100

125

150

Drain-Source Current, I_DS(A)

Junction Temperature, T_J(°C)

Figure 5. On-Resistance vs. Drain Current

Figure 6. On-Resistance vs. Temperature

For Various Temperatures

For Various Gate Voltage

3

E3M0120090D Rev. - , 07-2018

Typical Performance

35

-8

-7

-6

-5

-4

-3

-2

-1

0

Conditions:

V_DS= 20 V

0

30

25

20

15

10

5

tp < 200 µs

-5

T_J= 150 °C

V_GS= -4 V

-10

-15

-20

-25

-30

-35

-40

-45

V_GS= 0 V

T_J= 25 °C

T_J= -55 °C

V_GS= -2 V

Conditions:

T_J= -55°C

t_p< 200 µs

0

2

4

6

8

10

12

14

Drain-Source Voltage V_DS(V)

Gate-SourceVoltage, V_GS(V)

Figure 7. Transfer Characteristic for

Various Junction Temperatures

Figure 8. Body Diode Characteristic at -55 ºC

-8

-7

-6

-5

-4

-3

-2

-1

0

-8

-7

-6

-5

-4

-3

-2

-1

0

-5

V_GS= -4 V

-10

-15

-20

-25

-30

-35

-40

-45

-10

V_GS= 0 V

-15

-20

-25

-30

-35

-40

-45

V_GS= -2 V

Conditions:

T_J= 150°C

t_p< 200 µs

Conditions:

T_J= 25°C

t_p< 200 µs

Drain-Source Voltage V_DS(V)

Figure 9. Body Diode Characteristic at 25 ºC

Figure 10. Body Diode Characteristic at 150 ºC

3.0

2.5

2.0

1.5

1.0

0.5

0.0

16

Conditons

_GS= V_DS

I_DS= 3 mA

Conditions:

V

I

_DS= 15 A

_GS= 10 mA

12

8

V_DS= 400 V

T_J= 25 °C

4

0

-4

-50

-25

0

25

50

75

100

125

150

0

4

8

12

16

20

Junction Temperature T_J(°C)

Gate Charge, Q_G(nC)

Figure 11. Threshold Voltage vs. Temperature

Figure 12. Gate Charge Characteristics

4

E3M0120090D Rev. - , 07-2018

Typical Performance

-6

-5

-4

-3

-2

-1

0

-6

-5

-4

-3

-2

-1

0

V_GS= 0 V

-10

-20

-30

-40

-10

-20

-30

-40

V_GS= 5 V

V_GS= 10 V

V_GS= 15 V

Conditions:

T_J= -55 °C

t_p< 200 µs

Conditions:

T_J= 25 °C

t_p< 200 µs

Drain-Source Voltage V_DS(V)

Figure 13. 3rd Quadrant Characteristic at -55 ºC

Figure 14. 3rd Quadrant Characteristic at 25 ºC

20

15

10

5

-6

-5

-4

-3

-2

-1

0

V_GS= 0 V

-10

-20

-30

-40

V_GS= 5 V

V_GS= 10 V

V_GS= 15 V

Conditions:

T_J= 150 °C

t_p< 200 µs

0

100

200

300

400

500

600

700

800

900 1000

Drain to Source Voltage, V_DS(V)

Drain-Source Voltage V_DS(V)

Figure 15. 3rd Quadrant Characteristic at 150 ºC

Figure 16. Output Capacitor Stored Energy

1000

100

10

Conditions:

T_J= 25 °C

Conditions:

T_J= 25 °C

C_iss

V_AC= 25 mV

f = 1 MHz

C_oss

100

10

1

C_oss

C_rss

1

0

50

100

Drain-Source Voltage, V_DS(V)

150

200

0

100

200

300

400

500

600

700

800

900

Drain-Source Voltage, V_DS(V)

Figure 17. Capacitances vs. Drain-Source

Voltage (0 - 200V)

Figure 18. Capacitances vs. Drain-Source

Voltage (0 - 900V)

5

E3M0120090D Rev. - , 07-2018

Typical Performance

25

120

100

80

60

40

20

0

Conditions:

T_J≤ 150 °C

Conditions:

T_J≤ 150 °C

20

15

10

5

0

-55

-30

-5

20

45

70

95

120

145

-55

-30

-5

20

45

70

95

120

145

Case Temperature, T_C(°C)

Figure 19. Continuous Drain Current Derating vs.

Figure 20. Maximum Power Dissipation Derating vs.

Case Temperature

10 µs

1

Limited by R_{DS On}

100 µs

10.00

0.5

0.3

1 ms

100 ms

0.1

1.00

0.10

0.01

0.05

100E-3

0.02

SinglePulse

0.01

Conditions:

T_C= 25 °C

D = 0,

Parameter: t_p

10E-3

0.1

1

10

100

1000

1E-6

10E-6

100E-6

1E-3

Time, t_p(s)

10E-3

100E-3

1

Drain-Source Voltage, V_DS(V)

Figure 21. Transient Thermal Impedance

Figure 22. Safe Operating Area

(Junction - Case)

600

500

400

300

200

100

0

350

300

250

200

150

100

50

Conditions:

T_J= 25 °C

_DD= 600 V

Conditions:

T_J= 25 °C

V_DD= 400 V

R_G(ext)= 2.5 Ω

V_GS= -4V/+15 V

FWD = E3M0120090D

L = 142 μH

V

R_G(ext)= 2.5 Ω

V_GS= -4V/+15 V

FWD = E3M0120090D

L = 142 μH

E_Total

E_On

E_Off

0

5

10

15

20

25

0

5

10

15

20

25

Drain to Source Current, I_DS(A)

Figure 23. Clamped Inductive Switching Energy vs.

Figure 24. Clamped Inductive Switching Energy vs.

Drain Current (V_DD= 600V)

Drain Current (V_DD= 400V)

6

E3M0120090D Rev. - , 07-2018

Typical Performance

300

250

200

150

100

50

Conditions:

T_J= 25 °C

Conditions:

I_DS= 15 A

V_DD= 400 V

R_G(ext)= 2.5 Ω

V_GS= -4V/+15 V

FWD = E3M0120090D

L = 142 μH

V_DD= 400 V

250

200

150

100

50

I_DS= 20 A

V_GS= -4V/+15 V

FWD = E3M0120090D

L = 142 μH

E_Total

E_On

E_Off

0

5

10

15

20

25

0

25

50

75

100

125

150

175

External Gate Resistor RG(ext) (Ohms)

Junction Temperature, T_J(°C)

Figure 26. Clamped Inductive Switching Energy vs.

Figure 25. Clamped Inductive Switching Energy vs. R_G(ext)

Temperature

45

Conditions:

T_J= 25 °C

V_DD= 400 V

I_DS= 15 A

V_GS= -4V/+15 V

FWD = E3M0120090D

L = 142 μH

40

35

30

25

20

15

10

5

t_d(on)

t_d(off)

t_r

t_f

0

5

10

15

20

25

External Gate Resistor RG(ext) (Ohms)

Figure 27. Switching Times vs. R_G(ext)

Figure 28. Switching Times Deﬁnition

7

E3M0120090D Rev. - , 07-2018

Test Circuit Schematic

Figure 29. Clamped Inductive Switching Test Circuit

Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

8

E3M0120090D Rev. - , 07-2018

Package Dimensions

Inches

Millimeters

Min

POS

Package TO-247-3

Min

.190

.090

.075

.042

.075

.113

.022

.819

.640

.037

.620

.516

.145

.039

.487

Max

.205

.100

.085

.052

.095

.085

.133

.123

.027

.831

.695

.049

.635

.557

.201

.075

.529

Max

5.21

2.54

2.16

1.33

2.41

2.16

3.38

3.13

0.68

21.10

17.65

1.25

16.13

14.15

5.10

1.90

13.43

A

A1

A2

b

4.83

2.29

1.91

1.07

1.91

2.87

0.55

20.80

16.25

0.95

15.75

13.10

3.68

1.00

12.38

b1

b2

b3

b4

c

D

D1

D2

E

E1

E2

E3

E4

e

.214 BSC

3

5.44 BSC

N

3

L

.780

.800

.173

.144

.236

.248

11˚

8˚

19.81

4.10

3.51

5.49

6.04

9˚

20.32

4.40

3.65

6.00

6.30

11˚

8˚

Pinout Information:

T

U

L1

ØP

Q

.161

.138

.216

.238

9˚

•ꢀ Pin 1 = Gate

•ꢀ Pin 2, 4 = Drain

•ꢀ Pin 3 = Source

S

V

W

T

U

9˚

V

2˚

W

2˚

8˚

2˚

8˚

Recommended Solder Pad Layout

TO-247-3

9

E3M0120090D Rev. - , 07-2018

Notes

•

RoHS Compliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the

threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/

EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or

from the Product Documentation sections of www.cree.com.

REACh Compliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)

has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-

tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is

also available upon request.

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body

nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited

to equipment used in the operation of nuclear facilities, life-support machines, cardiac deﬁbrillators or similar emergency medical

equipment, aircraft navigation or communication or control systems, air trafﬁc control systems.


型号：	E3M0120090D
厂家：	CREE, INC
描述：	Silicon Carbide Power MOSFET E-Series Automotive
文件：	总10页 (文件大小：736K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

E3M0120090D [CREE]

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