GTRA374902FC-V1-R0 [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 â 3700 MHz;
| 型号： | GTRA374902FC-V1-R0 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 â 3700 MHz |
| 文件： | 总8页 (文件大小：2348K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTRA374902FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
450 W, 48 V, 3600 – 3700 MHz
Description
The GTRA374902FC is a 450-watt (P ) GaN on SiC high electron mobil-
3dB
ity transistor (HEMT) for use in multi-standard cellular power amplifier
applications. It features input matching, high efficiency, and a thermally-
enhanced package with earless flange.
GTRA374902FC
Package H-37248C-4
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 250 mA,
VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
Features
•
•
•
GaN on SiC HEMT technology
Input matched
24
20
16
12
8
60
40
20
0
Efficiency
Asymmetrical Doherty design
- Main: P
- Peak: P
= 220 W Typ
= 300 W Typ
3dB
3dB
•
Typical Pulsed CW performance, 3700 MHz, 48 V,
Gain
Doherty @ P , 10 µs, 10% duty cycle
3dB
- Output power = 450 W
- Drain efficiency = 60%
- Gain = 11.5 dB
-20
-40
-60
•
•
Capable of handling 10:1 VSWR @ 48 V, 63 W (WCDMA)
output power
PAR @ 0.01% CCDF
4
Human Body Model Class 1A, (per ANSI/ESDA/JEDEC
JS-001)
0
gtra374902fc_g1
35
37.5
40
42.5
45
47.5
50
•
•
Low thermal resistance
Average Output Power (dBm)
Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)
= 48 V, I = 250 mA, P = 63 W avg, V = –5.8 V, ƒ = 3700 MHz, channel bandwidth = 3.84 MHz, peak/average = 10 dB @
V
DD
DQ
OUT
GSPEAK
0.01% CCDF
Characteristic
Gain
Symbol
Min
10.8
32
Typ
12
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
37.5
–32.5
8.2
—
%
Adjacent Channel Power Ratio
ACPR
OPAR
—
–28.5
—
dBc
dB
Output PAR @ 0.01% CCDF
7.5
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02.1, 2019-04-26
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTRA374902FC
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
150
—
Typ
—
Max
—
Unit
Drain-source Breakdown Voltage (main) V = –8 V, I = 10 mA
V
V
V
GS
D
(BR)DSS
(BR)DSS
(peak) V = –8 V, I = 10 mA
V
—
—
GS
GS
DS
DS
D
Drain-source Leakage Current
Gate Threshold Voltage (main)
(peak)
V
V
V
= –8 V, V = 10 V
I
—
5
mA
V
DS
DSS
= 10 V, I = 25.2 mA
V
–3.8
–3.8
–3
–3
–2.3
–2.3
D
GS(th)
GS(th)
= 10 V, I = 36 mA
V
V
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
Operating Voltage
Gate Quiescent Voltage
V
DD
V
V
V
= 48 V, I = 250 mA
V
GS(Q)
–3.65
–3
–2.4
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Gate Current (main)
(peak)
V
DSS
V
–10 to +2
55
V
GS
DD
V
V
I
25.2
mA
mA
A
G
G
D
D
I
36
Drain Current (main)
(peak)
I
I
9.5
13.5
A
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values
may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For
reliable continuous operation, the device should be operated within the operating voltage range (V ) specified above.
DD
Thermal Characteristics
Parameter
Symbol
Value
1.6
Unit
°C/W
°C/W
Thermal Resistance (main, T
= 85°C, 100 W DC)
= 85 °C, 140 W DC)
R
CASE
qJC
qJC
(peak, T
R
1.1
CASE
Ordering Information
Type and Version
GTRA374902FC V1 R0
GTRA374902FC V1 R2
Order Code
Package Description
H-37248C-4
Shipping
GTRA374902FC-V1-R0
GTRA374902FC-V1-R2
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
H-37248C-4
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 02.1, 2019-04-26
GTRA374902FC
3
Typical Performance (data taken in test fixture)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 250 mA,
VGS(PEAK) = -5.8 V, POUT = 48 dBm,
3GPP WCDMA signal, PAR = 10 dB
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 250 mA,
VGS(PEAK) = -5.8 V, ƒ = 3700 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
13
12
11
10
9
50
45
40
35
30
25
20
-10
-20
-30
-40
60
50
40
30
20
10
0
Gain
Efficiency
-50
ACPU
ACPL
Efficiency
-60
-70
gtra374902fc_g2
8
3350
gtra374902fc_g3
35
37.5
40
42.5
45
47.5
50
3450
3550
3650
3750
3850
Average Output Power (dBm)
Frequency (MHz)
Pulse CW Performance
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 250 mA,
VGS(PEAK) = -5.8 V, POUT = 48 dBm,
3GPP WCDMA signal, PAR = 10 dB
VDD = 48 V, IDQ(MAIN) = 250 mA,
VGS(PEAK) = -5.8 V，ƒ = 3700 MHz
16
65
-20
-25
-30
-35
-40
-5
ACPU
ACPL
IRL
15
14
13
12
11
10
55
45
35
25
15
5
-10
-15
-20
-25
Gain
Efficiency
gtra374902fc_g5
gtra374902fc_g4
32
36
40
44
48
52
56
60
3350
3450
3550
3650
3750
3850
Frequency (MHz)
Output Power (dBm)
Rev. 02.1, 2019-04-26
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTRA374902FC
4
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 48 V, IDQ(MAIN) = 250 mA,
VGSPEAK = -5.8 V
Pulse CW Performance at various VDD
IDQ(MAIN) = 250 mA, VGS(PEAK) = -5.8 V
ƒ = 3700 MHz
46V Gain
48V Gain
50V Gain
16
15
14
13
12
11
10
9
-4
16
15
14
13
12
11
10
9
70
60
50
40
30
20
10
0
52V Gain
46V Eff
48V Eff
50V Eff
52V Eff
-5
Gain
-6
-7
-8
-9
-10
-11
-12
-13
-14
IRL
8
7
gtra374902fc_g6
6
3350
gtra374902fc_g7
32
36
40
44
48
52
56
60
3450
3550
3650
3750
3850
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I = 250 mA, class AB
DQ
P
3dB
Max Output Power
Max Drain Efficiency
Zs
[W]
ZL
[W]
ZL
[W]
Freq
[MHz]
Gain
[dB]
P
P
hD
[%]
Gain
[dB]
P
P
3dB
hD
3dB
3dB
3dB
[dBm]
54.20
54.20
[W]
263
263
[dBm]
52.20
52.30
[W]
166
170
[%]
71.0
70.0
3600
3700
7-j5.7
3.5-j6.7
3.7-j6.6
16.4
16.2
61.0
60.0
2-j4.4
17.9
17.4
6.2-j9.3
1.8-j5.2
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, V
= –5 V, class C
GSPK
P
3dB
Max Output Power
Max Drain Efficiency
Zs
[W]
ZL
[W]
ZL
[W]
Freq
[MHz]
Gain
[dB]
P
P
hD
[%]
Gain
[dB]
P
P
3dB
hD
[%]
3dB
3dB
3dB
[dBm]
55.60
55.40
[W]
363
347
[dBm]
55.10
54.80
[W]
324
302
3600
3700
15-j11.3
10.8-j8.8
3.2-j8.4
3.2-j8.7
11.8
11.3
58.6
55.0
2.9-j7.1
2.4-j7
12.4
12.2
66.7
68.4
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
Rev. 02.1, 2019-04-26
GTRA374902FC
5
Reference Circuit, 3600 – 3700 MHz
C211
VGS(MAIN)
VDD
C204
C203
C109
C111
C110
C205
C206
C108
GTRA374902FC
_OUT_01A
GTRA374902FC_IN_01
R101
RO4350,
20 MIL
C105
C101
C103
C106
R103
RF_IN
RF_OUT
C104
C102
U1
C202
C201
R102
C107
RO4350, 20 MIL
C112
C207
C115
VDD
VGS(PEAK)
C113
C114
C208
C209
C210
G
t
r
a37 4902
f
c- 1_
CD
_01 - 31 - 20 19
Reference circuit assembly diagram (not to scale)
Reference Circuit Assembly
DUT
GTRA374902FC-V1
LTA/GTRA374902FC-V1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, ε = 3.66, ƒ = 3600 – 3700 MHz
Test Fixture Part No.
PCB
r
Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF
Rev. 02.1, 2019-04-26
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTRA374902FC
ꢀ
Reference Circuit (cont.)
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C102
C103
Capacitor, 0.5 pF
Capacitor, 0.9 pF
Capacitor, 1.2 pF
Capacitor, 10 pF
ATC
ATC
ATC
ATC
ATC800A0R5CT250XT
ATC800A0R9CT250XT
ATC800A1R2CT250XT
ATC800A100JT250XT
C104
C105, C106, C107, C108,
C112
C109, C113
C110, C114
C111, C115
R101, R102
R103
Capacitor, 1 µF, 100 V
Capacitor, 10 µF, 100 V
Capacitor, 100 µF, 35 V
Resistor, 5.6 ohms
Resistor, 50 ohms
TDK Corporation
C4532X7R2A105M230KA
C5750X7S2A106M230KB
EEE-FT1V101AP
ERJ-8RQJ5R6V
TDK Corporation
Panasonic Electronic Components
Panasonic Electronic Components
Richardson
C8A50Z4A
U1
Hybrid Coupler
Anaren
XC3500P-03S
Output
C201, C202, C203, C207
C204, C208
C205, C206, C209, C210
C211
Capacitor, 10 pF
ATC
ATC800A100JT250XT
C4532X7R2A105M230KA
C5750X7S2A106M230KB
ECA-2AHG221
Capacitor, 1 µF, 100 V
Capacitor, 10 µF, 100 V
Capacitor, 220 µF, 100 V
TDK Corporation
TDK Corporation
Panasonic Electronic Components
Pinout Diagram (top view)
Main
Peak
S
Pin
D1
D2
G1
G2
S
Description
Drain Device 1 (Main)
Drain Device 2 (Peak)
Gate Device 1 (Main)
Gate Device 2 (Peak)
Source (flange)
D1
D2
H-37248-4_pd_10-10-2012
G1
G2
Lead connections for GTRA374902FC
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 02.1, 2019-04-26
GTRA374902FC
7
Package Outline Specifications
Package H-37248C-4
(8.89
[.350])
(5.08
45° X 2.72
[.107]
[.200])
C
L
4.83±0.51
[.190±0.020]
D1
D2
9.78
[.385]
(19.43
[.765])
C
L
G1
G2
+0.38
R0.51
R.020
–0.13
+.015
–.005
3.81
[.150]
12.70
[.500]
3.78±0.25
[.149±0.010]
19.81±0.20
[.780±0.008]
1.02
[.040]
C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016
C
L
SPH 1.57
[.062]
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm, alternate dimensions are inches
3. All tolerances ꢀ.12ꢁ ꢂꢀ.ꢀꢀ5ꢃ
4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange)
5. Lead thickness: ꢀ.13 ꢀ.ꢀ5 ꢂꢀ.ꢀꢀ5 ꢀ.ꢀꢀ2ꢃ
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ
Rev. 02.1, 2019-04-26
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
GTRA374902FC
8
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
2018-10-29
2018-12-03
2019-02-18
2019-04-26
Advance
All
2
Data Sheet reflects advance specification for product development
Revised max drain operating voltage to ꢁ0V, added operating voltage in Max ratings table
Data Sheet reflects released product specification
01.1
02
Advance
Production
Production
All
1
02.1
Added VSWR statement
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
© ꢀꢁ1ꢂ Cree, Inc. All rights reserved. Wolfspeed® and the Wolfspeed logo are registered trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 02.1, 2019-04-26
相关型号：
GTRA374902FC-V1-R2
Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 â 3700 MHz
CREE
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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 â 3800 MHz
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GTRA384802FC-V1-R2
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 â 3800 MHz
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