GTVA212701FA [CREE]

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz;
GTVA212701FA
型号: GTVA212701FA
厂家: CREE, INC    CREE, INC
描述:

Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

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中文:  中文翻译
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GTVA212701FA  
Thermally-Enhanced High Power RF GaN on SiC HEMT  
270 W, 48 V, 2110 – 2200 MHz  
Description  
The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transis-  
tor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input  
matching, high efficiency, and a thermally-enhanced earless package.  
GTVA212701FA  
Package H-87265J-2  
Features  
Single-carrier WCDMA Drive-up  
VDD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz  
3GPP WCDMA signal,  
•ꢀ GaN on SiC HEMT technology  
•ꢀ Input matched  
10 dB PAR, 3.84 MHz bandwidth  
•ꢀ Typical pulsed CW performance (class AB), 2180 MHz,  
48 V, 10 µs pulse width, 10% duty cycle  
24  
20  
16  
12  
8
60  
40  
20  
0
- Output power P  
-ꢀDrainꢀefficiencyꢀ=ꢀ68.5%ꢀ  
= 300 W  
3dB  
Gain  
- Gain = 17.5 dB  
•ꢀ Human Body Model Class 1B (per ANSI/ESDA/JEDEC  
JS-001)  
Efficiency  
•ꢀ Capable of handling 10:1 VSWR @ 48 V, 56.2 W (WCD-  
MA) output power  
•ꢀ Low thermal resistance  
-20  
-40  
-60  
•ꢀ Pb-free and RoHS-compliant  
4
PAR @ 0.01% CCDF  
g212701fa-gr1  
0
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
RF Characteristics  
Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)  
= 48 V, I = 320 mA, 56.2 W average output power, ƒ = 2180 MHz. 3GPP WCDMA signal: 3.84 MHz channel bandwidth, 10 dB PAR at  
V
DD  
DQ  
0.01% CCDF.  
Characteristic  
Symbol  
Min  
18  
Typ  
19  
Max  
Unit  
dB  
Gain  
G
ps  
DrainꢀEfficiencyꢀꢀ  
hD  
35  
38  
%
Adjacent Channel Power Ratio  
Output PAR at 0.01% probablity on CCDF  
ACPR  
OPAR  
–29  
7.0  
–26  
dBc  
dB  
6.4  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Rev. 04.1, 2019-01-28  
4600 Silicon Drive  
|
Durham, NC 27703  
|
www.wolfspeed.com  
GTVA212701FA  
2
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
150  
Typ  
Max  
Unit  
V
Drain-source Breakdown Voltage  
Drain-source Leakage Current  
Gate Threshold Voltage  
V
GS  
V
GS  
V
DS  
= –8 V, I = 10 mA  
V
D
(BR)DSS  
= –8 V, V = 10 V  
I
4.5  
mA  
V
DS  
DSS  
DSX(th)  
= 10 V, I = 32 mA  
V
–3.8  
3.0  
–2.3  
D
Recommended Operating Conditions  
Parameter  
Conditions  
Symbol  
Min  
0
Typ  
Max  
50  
Unit  
Drain Operating Voltage  
Gate Quiescent Voltage  
V
DD  
V
V
V
= 48 V, I = 320 mA  
V
GS(Q)  
–3.4  
–3.0  
–2.5  
DS  
D
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
125  
Unit  
V
Drain-source Voltage  
Operating Voltage  
Gate-source Voltage  
Gate Current  
V
DSS  
V
DD  
55  
V
V
GS  
–10 to +2  
32  
V
I
mA  
A
G
D
Drain Current  
I
12  
Junction Temperature  
Storage Temperature Range  
T
225  
°C  
°C  
J
T
–65 to +150  
STG  
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding  
only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating  
voltage range (V ) specified above.  
DD  
Thermal Characteristics  
T
CASE  
= 70°c, 56.2 W (CW), 48 V, I = 320 mA, 2170 MHz  
DQ  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance  
R
q
1.1  
°C/W  
JC  
Ordering Information  
Type and Version  
GTVA212701FAꢀV2ꢀR0ꢀ  
GTVA212701FAꢀV2ꢀR2ꢀ  
Order Code  
Package and Description  
Shipping  
GTVA212701FA-V2-R0ꢀ  
GTVA212701FA-V2-R2ꢀ  
H-87265J-2,ꢀsingle-ended,ꢀearlessꢀflangeꢀ  
H-87265J-2,ꢀsingle-ended,ꢀearlessꢀflangeꢀ  
Tapeꢀ&ꢀReel,ꢀꢀ50ꢀpcs  
Tapeꢀ&ꢀReel,ꢀ250ꢀpcs  
4600 Silicon Drive  
| Durham, NC 27703 | www.wolfspeed.com  
Rev. 04.1, 2019-01-28  
GTVA212701FA  
3
Typical Performance (data taken in Wolfspeed production test fixture)  
Single-carrier WCDMA Drive-up  
Single-carrier WCDMA Broadband  
VDD = 48 V, IDQ = 320 mA,  
POUT = 47.5 dBm  
V
DD = 48 V, IDQ = 320 mA, ƒ = 2170 MHz  
3GPP WCDMA signal, 10 dB PAR,  
3.84 MHz bandwidth  
3GPP WCDMA signal, 10 dB PAR  
20  
18  
16  
14  
12  
60  
50  
40  
30  
20  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
60  
50  
40  
30  
20  
10  
0
Gain  
Efficiency  
ACPU  
ACPL  
Efficiency  
g212701fa-gr3  
g212701fa-gr2  
1950  
2050  
2150  
2250  
2350  
25  
30  
35  
40  
45  
50  
55  
Average Output Power (dBm)  
Frequency (MHz)  
Single-carrier WCDMA Broadband  
CW Performance Across Frequency  
VDD = 48 V, IDQ = 320 mA,  
VDD = 48 V, IDQ = 320 mA  
POUT = 47.5 dBm  
3GPP WCDMA signal, 10 dB PAR  
21  
20  
19  
18  
17  
16  
15  
14  
70  
60  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
Gain  
ACPU  
ACPL  
IRL  
Efficiency  
2170 MHz  
2110 MHz  
2140 MHz  
g212701fa-gr4  
g212701fa-gr5  
29  
33  
37  
41  
45  
49  
53  
57  
1950  
2050  
2150  
2250  
2350  
Output Power (dBm)  
Frequency (MHz)  
Rev. 04.1, 2019-01-28  
4600 Silicon Drive  
| Durham, NC 27703 | www.wolfspeed.com  
GTVA212701FA  
4
Typical Performance (cont.)  
CW Performance at various VDD  
CW Small Signal Performance  
IDQ = 320 mA, ƒ = 2170 MHz  
VDD = 48 V, IDQ = 320 mA  
22  
21  
20  
19  
18  
17  
16  
15  
70  
60  
50  
40  
30  
20  
10  
0
22  
20  
18  
16  
14  
12  
10  
-5  
-10  
-15  
-20  
-25  
-30  
-35  
44 V Gain  
48 V Gain  
52 V Gain  
44 V Eff  
48 V Eff  
52 V Eff  
Gain  
Input Return Loss  
g212701fa-gr6  
g212701fa-gr7  
29  
33  
37  
41  
45  
49  
53  
57  
1950  
2050  
2150  
2250  
2350  
Frequency (MHz)  
Output Power (dBm)  
Load Pull  
Pulsed CW signal: 10 µsec, 10% duty cycle; V = 48 V, I = 300 mA  
DD  
DQ  
P
3dB  
Class AB  
Max Output Power  
Max Drain Efficiency  
Freq  
[MHz]  
Zs  
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
[W]  
Zl  
[W]  
Gain  
[dB]  
P
P
3dB  
hD  
hD  
3dB  
3dB  
3dB  
[dBm]  
55.72  
55.71  
55.80  
[dBm]  
54.74  
54.78  
54.88  
[W]  
[%]  
[%]  
2110  
2170  
2200  
6.38 – j6.61  
4.78 – j4.24  
4.09 – j4.3  
3.01 – j3.1  
3.01 – j3.1  
3.01 – j3.1  
17.28  
17.37  
16.97  
373.2  
372.3  
380.2  
67.5  
68.8  
65.6  
3.01 – j1.41  
3.13 – j1.84  
3.08 – j1.97  
18.57  
18.55  
18.6  
297.6  
300.7  
307.6  
73.9  
73.2  
74.7  
4600 Silicon Drive  
| Durham, NC 27703 | www.wolfspeed.com  
Rev. 04.1, 2019-01-28  
GTVA212701FA  
5
Reference Circuit tuned for 2110 to 2200 MHz  
DUT  
GTVA212701FA V2  
Reference Circuit Part No.  
PCB  
LTN/GTVA212701FA-V2  
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66  
Find Gerber files for this reference circuit on the Wolfspeed Web site at http://www.wolfspeed.com/RF  
RO4350, 20 MIL (291)  
RO4350, 20 MIL (291)  
VGG  
C203  
VDD  
C102  
C202  
C201  
C104 C109  
C101  
R102  
C108  
C205  
C209  
C208  
C207  
RF_IN  
RF_OUT  
R103  
C107  
C103  
R101  
C204  
C206  
C106  
C110  
C105  
GTVA212701FA_IN_03  
GTVA212701FA_OUT_03  
g t v a 2 1 2 7 0 1 f a _ C D _ 0 3 - 2 3 - 1 7 - b n  
Reference circuit assembly diagram (not to scale)  
Rev. 04.1, 2019-01-28  
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com  
GTVA212701FA  
6
Reference Circuit (cont.)  
Components Information  
Component  
Input  
Description  
Manufacturer  
P/N  
C101  
Capacitor, 2 pF  
Capacitor, 10 µF  
ATC  
ATC800A2R0BT250XT  
UMK325C7106MM-T  
C102, C104, C105,  
C106  
Taiyo Yuden  
C103  
Capacitor, 0.2 pF  
Capacitor, 15 pF  
Capacitor, 12 pF  
Capacitor, 24 pF  
Resistor, 10 ohms  
Resistor, 10 ohms  
ATC  
ATC800A0R2BT250XT  
ATC800A150GT250XT  
ATC800A120JT250XT  
ATC800A240JT250XT  
ERJ-8GEYJ100V  
C107  
ATC  
C108  
ATC  
C109, C110  
R101, R102  
R103  
ATC  
Panasonic Electronic Components  
Yageo  
RC0805JR-0710RL  
Output  
C201, C204  
C202, C203  
Capacitor, 24 pF  
Capacitor, 220 µF  
Capacitor, 10 µF  
ATC  
ATC800A240JT250XT  
ECA-2AHG221  
Panasonic Electronic Components  
TDK Corporation  
C205, C207, C208,  
C209  
C5750X7S2A106M230KB  
C206  
Capacitor, 0.6 pF  
ATC  
ATC800A0R6BT250XT  
Pinout Diagram (top view)  
D
S
Pin  
D
Description  
Drain  
G
Gate  
S
Source (flange)  
G
H-37265J-2_03_pd_20 16-12-01-bn  
4600 Silicon Drive  
| Durham, NC 27703 | www.wolfspeed.com  
Rev. 04.1, 2019-01-28  
GTVA212701FA  
7
Package Outline Specifications  
Package H-87265J-2  
6.35  
[.250]  
45° X .64  
[.025]  
2.59±.51  
[.102±.020]  
D
LID  
10.16±.25  
[.400±.010]  
FLANGE  
10.16 ± 0.191  
[.400 ± .0075]  
(15.34  
[.604])  
C
L
G
FLANGE  
H-87265J-2_po-03_03-03-2017-bn  
R0.63  
C
L
[R.025] MAX  
10.16±.25  
[.400±.010]  
SPH 1.57  
[.062]  
3.63±.38  
[.143±.015]  
1.02  
[.040]  
10.16 ± 0.191  
[.400 ± .0075]  
S
DiagramꢀNotes—unlessꢀotherwiseꢀspecified:ꢀ  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994  
2. Primary dimensions are mm; alternate dimensions are inches  
3. All tolerances ± 0.127 [0.005]  
4. Pins:ꢀDꢀ–ꢀdrain,ꢀGꢀ–ꢀgate,ꢀSꢀ–ꢀsourceꢀ(flange)  
5. Lead thickness: 0.13 ± 0.05 mm [0.005 ± 0.002]  
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]  
Rev. 04.1, 2019-01-28  
4600 Silicon Drive  
| Durham, NC 27703 | www.wolfspeed.com  
GTVA212701FA  
8
Revision History  
01  
2017-01-24  
Advance  
All  
All  
Proposedꢀspecificationꢀforꢀnewꢀproductꢀdevelopmentꢀ  
02  
2017-07-07  
Production  
Data Sheet now represents production-released product specifications, includ-  
ing reference circuit and performance information  
03  
2018-03-28  
Production  
1
2
Change frequency of testing from 2170 MHz to 2180 MHz.  
Typo in table heading  
7, 8  
Typos: Package Outline diagram notes, email information.  
04  
2018-07-05  
2019-01-28  
Production  
Production  
All  
2
Revised to V2. Converted to Wolfspeed data sheet.  
Added gate quiescent voltage and operating voltage  
04.1  
For more information, please contact:  
4600 Silicon Drive  
Durham, North Carolina, USA 27703  
www.wolfspeed.com/RF  
Sales Contact  
RFSales@wolfspeed.com  
RF Product Marketing Contact  
RFMarketing@wolfspeed.com  
919.407.7816  
Notes  
Disclaimer  
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCree,ꢀInc.ꢀbelievesꢀtheꢀinformationꢀcontainedꢀwithinꢀthisꢀdataꢀsheetꢀ  
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights  
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-  
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any  
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for  
informationꢀpurposesꢀonly.ꢀTheseꢀvaluesꢀcanꢀandꢀdoꢀvaryꢀinꢀdifferentꢀapplicationsꢀandꢀactualꢀperformanceꢀcanꢀvaryꢀoverꢀ  
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products  
are not designed, intended or authorized for use as components in applications intended for surgical implant into the  
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or  
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.  
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.  
www.wolfspeed.com  
Rev. 04.1, 2019-01-28  

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