GTVA261802FC-V1-R0 [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 â 2690 MHz;
| 型号： | GTVA261802FC-V1-R0 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 â 2690 MHz |
| 文件： | 总8页 (文件大小：495K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTVA261802FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
170 W, 48 V, 2620 – 2690 MHz
Description
The GTVA261802FC is a 170-watt GaN on SiC high electron mobility tran-
sistorꢀforꢀuseꢀinꢀmulti-standardꢀcellularꢀpowerꢀamplifierꢀapplications.ꢀ
Itꢀfeaturesꢀinputꢀmatching,ꢀhighꢀefficiency,ꢀandꢀaꢀthermally-enhancedꢀ
packageꢀwithꢀearlessꢀflange.ꢀꢀ
GTVAꢀꢁꢂꢃꢄꢀFC
Package H-37ꢀ4ꢃC-4
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 160 mA,
ƒ = 2690 MHz, 3GPP WCDMA signal,
Features
PAR = 10 dB, 3.84 MHz BW
•ꢀ GaN on SiC HEMT technology
•ꢀ Input matched
24
20
16
12
8
60
40
20
0
Gain
•ꢀ Typical Pulsed CW performance,combined outputs,
2690 MHz, 48 V, 10 µs pulse width, 10% duty cycle
- Output power at P
-ꢀDrainꢀEfficiencyꢀ@ꢀP
= 170 W
3dB
= 65.5%
3dB
-ꢀGainꢀ@ꢀP
= 15 dB
3dB
Efficiency
•ꢀ Capable of handling 10:1 VSWR @ꢀ48ꢀV,ꢀ180ꢀWꢀ(CW)ꢀ
output power
-20
-40
-60
•ꢀ HumanꢀBodyꢀModelꢀClassꢀ1Aꢀ(perꢀANSI/ESDA/JEDECꢀ
JS-001)
PAR @ 0.01% CCDF
4
•ꢀ Low thermal resistance
•ꢀ Pb-free and RoHS compliant
0
gtva261802fc_g1
27
32
37
42
47
52
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (testedꢀinꢀWolfspeedꢀproductionꢀtestꢀfixture)
= 48 V, I = 160 mA, P ꢀ=ꢀ50ꢀWꢀavg,ꢀƒꢀ=ꢀ2690ꢀMHz,ꢀ3GPP,ꢀchannelꢀbandwidthꢀ=ꢀ3.84ꢀMHz,ꢀpeak/averageꢀ=ꢀ10ꢀdBꢀ@ꢀ0.01%ꢀCCDF
V
DD
DQ
OUT
Characteristic
Gain
Symbol
Min
15.5
40
Typ
16.8
43
Max
—
Unit
dB
G
ps
D
DrainꢀEfficiencyꢀꢀ
ꢀ
ꢀ
ꢀ
h
—
%
Adjacent Channel Power Ratio
ACPR
OPARꢀ
—
–27
5.3ꢀ
–24.5
—ꢀ
dBc
dB
OutputꢀPARꢀ@ꢀ0.01%ꢀCCDFꢀ
4.5ꢀ
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02, 2018-09-25
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA261802FC
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
V
GS
V
DS
= –8 V, I = 10 mA
V
(BR)DSS
D
= –8 V, V = 10 V
I
—
1.5
mA
V
DS
DSS
= 10 V, I = 10 mA
V
–3.8
–3.0
–2.3
D
GS(th)
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
Operating Voltage
Gate Quiescent Voltage
V
DD
V
V
V
= 48 V, I = 160 mA
V
GS(Q)
–3.60
–2.97
–2.30
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
10.8
V
I
mA
A
G
D
Drain Current
I
4
JunctionꢀTemperatureꢀ
Storage Temperature Range
ꢀ
T
225
°C
°C
J
T
–65 to +150
STG
Operationꢀaboveꢀtheꢀmaximumꢀvaluesꢀlistedꢀhereꢀmayꢀcauseꢀpermanentꢀdamage.ꢀMaximumꢀratingsꢀareꢀabsoluteꢀratings;ꢀexceeingꢀonlyꢀoneꢀofꢀtheseꢀvaluesꢀ
mayꢀcauseꢀirreversibleꢀdamageꢀtoꢀtheꢀcomponent.ꢀExposureꢀtoꢀabsoluteꢀmaximumꢀratingꢀconditionsꢀforꢀextendedꢀperiodsꢀmayꢀaffectꢀdeviceꢀreliability.ꢀForꢀ
reliableꢀcontinuousꢀoperation,ꢀtheꢀdeviceꢀshouldꢀbeꢀoperatedꢀwithinꢀtheꢀoperatingꢀvoltageꢀrangeꢀ(V )ꢀspecifiedꢀabove.
DD
Thermal Chracteristics
Parameter
Symbol
Value
Unit
ThermalꢀResistanceꢀ(T
=ꢀ70ºc,ꢀ100ꢀWꢀCW)ꢀ
R
1.06ꢀ
ꢀ
°C/W
CASE
qJC
Ordering Information
Type and Version
GTVA261802FC V1 R0
GTVA261802FC V1 R2
Order Code
Package Description
Shipping
GTVA261802FC-V1-R0
GTVA261802FC-V1-R2
H-37248C-4,ꢀearlessꢀflangeꢀꢀ
H-37248C-4,ꢀearlessꢀflangeꢀ
Tapeꢀ&ꢀReel,ꢀ50ꢀpcs
Tapeꢀ&ꢀReel,ꢀ250ꢀpcs
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2018-09-25
GTVA261802FC
ꢅ
Typical Performance (dataꢀtakenꢀinꢀtestꢀfixture)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 160 mA,
ƒ = 2690 MHz, 3GPP WCDMA signal,
PAR = 10 dB, BW = 3.84 MHz
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 160 mA,
POUT = 47 dBm, 3GPP WCDMA signal,
PAR = 10 dB
-10
-20
-30
-40
60
50
40
30
20
10
0
18
17
16
15
14
55
50
45
40
35
Gain
Efficiency
-50
ACPU
-60
-70
ACPL
Efficiency
gtva261802fc_g2
gtva261802fc_g3
27
32
37
42
47
52
2550
2600
2650
2700
2750
Average Output Power (dBm)
Frequency (MHz)
CW Performance
VDD = 48 V, IDQ(MAIN) = 160 mA
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 160 mA,
POUT = 47 dBm, 3GPP WCDMA signal,
PAR = 10 dB
2620MHz Gain
2655MHz Gain
2690MHz Gain
2620MHz Eff
2655MHz Eff
2690MHz Eff
20
70
-20
-25
-30
-35
-15
-20
-25
-30
19
18
17
16
15
14
13
60
50
40
30
20
10
0
ACPU
ACPL
IRL
gtva261802fc_g5
gtva261802fc_g4
29
33
37
41
45
49
53
2550
2600
2650
2700
2750
Output Power (dBm)
Frequency (MHz)
Rev. 02, 2018-09-25
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA261802FC
ꢆ
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 48 V, IDQ(MAIN) = 160 mA
CW Performance at various VDD
IDQ(MAIN) = 160 mA, ƒ = 2690 MHz
20
18
16
14
12
-10
-12
-14
-16
-18
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
0
Gain
44V Gain
48V Gain
52V Gain
44V Eff
48V Eff
IRL
52V Eff
gtva261802fc_g6
gtva261802fc_g7
29
33
37
41
45
49
53
2550
2600
2650
2700
2750
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Each Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I = 80 mA, class AB
DQ
P
3dB
Max Output Power
Max Drain Efficiency
Zs
[W]
ZL
[W]
ZL
[W]
Freq
[MHz]
Gain
[dB]
P
P
hD
[%]
Gain
[dB]
P
P
hD
3dB
3dB
3dB
3dB
[W]
[dBm]
50.35
50.21
[W]
108.4
105
[dBm]
48.60
48.60
[%]
77.7
77.6
2620
2690
32.6-j23.3
7.02-j0.46
5.38-j0.83
16
69.2
65.1
3.6+j1.73
5.38-j0.83
16.4
15.8
72.4
72.4
41.87-j10.33
15.9
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I = 80 mA, class AB
DQ
P
3dB
Max Output Power
Max Drain Efficiency
Zs
[W]
ZL
[W]
ZL
[W]
Freq
[MHz]
Gain
[dB]
P
P
hD
[%]
Gain
[dB]
P
P
3dB
hD
[%]
3dB
3dB
3dB
[dBm]
50.35
50.21
[W]
108.4
105
[dBm]
48.60
48.60
[W]
72.4
72.4
2620
2690
32.6-j23.3
7.02-j0.46
5.38-j0.83
16
69.2
65.1
3.6+j1.73
5.38-j0.83
16.4
15.8
77.7
77.6
41.87-j10.33
15.9
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2018-09-25
GTVA261802FC
5
Reference Circuit, 2620 – 2690 MHz
RO4350, 20 MIL
RO4350, 20 MIL
VDD
VGS(MAIN)
C213
C209
C208
C207
R101
C103
C205
C105
C101
C201
C203
R103
U1
RF_IN
RF_OUT
U2
C102
C204
R201
C202
C104
R102
C106
C206
C210
C211
C212
C214
VGS(PEAK)
VDD
GTVA261802FC_IN_01
GTVA261802FC_OUT_01
gt
v a26 180 2f c_C D_08 - 16 - 20 18
Reference circuit assembly diagram (not to scale)
Rev. 02, 2018-09-25
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA261802FC
6
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
GTVA261802FC V1
TestꢀFixtureꢀPartꢀNo.ꢀ
LTN/GTVA261802FCꢀV1
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 2620 – 2690 MHz
FindꢀGerberꢀfilesꢀforꢀthisꢀtestꢀfixtureꢀonꢀtheꢀWolfspeedꢀWebꢀsiteꢀatꢀwww.wolfspeed.com/RF
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C102, C103, C104
C105, C106
R101, R102
R103
Capacitor, 12 pF
Capacitor, 100V, 4.7 µF
Resistor, 10 ohms
Resistor, 50 ohms
Hybrid coupler
ATC
ATC600F120JT250X
C4532X7S2A475M230KB
ERJ-8GEYJ100V
TDK Corporation
Panasonic Electronic Components
Richardson
C16A50Z4
U1
Anaren
X3C26P1-03Sꢀꢀꢀꢀꢀ
Output
C201, C202
Capacitor, 0.5 pF
Capacitor, 12 pF
ATC
ATC600F0R5JT250X
ATC600F120JT250X
C4532X7S2A475M230KB
C203, C204, C205, C206
ATC
C207, C208, C209, C210, C211, Capacitor, 100 V, 4.7 µF
C212
TDK Corporation
C213, C214
R201
Capacitor, 470 µF
Resistor, 50 ohms
Hybrid coupler
CornellꢀDubilierꢀElectronicsꢀ(CDE)
SEK471M050ST
C16A50Z4
Richardson
Anaren
U2
X3C26P1-03Sꢀꢀꢀꢀꢀ
Pinout Diagram (topꢀview)
Main
Peak
S
Pin
D1ꢀ
D2ꢀ
G1ꢀ
G2ꢀꢀ
Sꢀ
Description
DrainꢀDeviceꢀ1ꢀ(Main)
DrainꢀDeviceꢀ2ꢀ(Peak)
GateꢀDeviceꢀ1(Main)
GateꢀDeviceꢀ2ꢀ(Peak)
Sourceꢀ(flange)ꢀ
D1
D2
H-37248-4_pd_10-10-2012
G1
G2
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 02, 2018-09-25
GTVA261802FC
ꢇ
Package Outline Specifications
Package H-37248C-4
(8.89
[.350])
(5.08
45° X 2.72
[.107]
[.200])
C
L
4.83±0.51
[.190±0.020]
D1
D2
9.78
[.385]
(19.43
[.765])
C
L
G1
G2
+0.38
R0.51
R.020
–0.13
+.015
–.005
3.81
[.150]
12.70
[.500]
3.78±0.25
[.149±0.010]
19.81±0.20
[.780±0.008]
1.02
[.040]
C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016
C
L
SPH 1.57
[.062]
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm, alternate dimensions are inches
3. All tolerances ꢀ.12ꢁ ꢂꢀ.ꢀꢀ5ꢃ
4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange)
5. Lead thickness: ꢀ.13 ꢀ.ꢀ5 ꢂꢀ.ꢀꢀ5 ꢀ.ꢀꢀ2ꢃ
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ
Rev. 02, 2018-09-25
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA261802FC
8
Revision History
Revision
Date
Data Sheet Type
Page
Subjects (major changes since last revision)
01
02
2017-07-21
2018-09-25
Advance
All
All
DataꢀSheetꢀreflectsꢀadvanceꢀspecificationꢀforꢀproductꢀdevelopmentꢀꢀ
DataꢀSheetꢀreflectsꢀreleasedꢀproductꢀspecification
Production
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.comꢀ
919.407.7816
Notes
Disclaimer
Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCree,ꢀInc.ꢀbelievesꢀtheꢀinformationꢀcontainedꢀwithinꢀthisꢀdataꢀsheetꢀ
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particularꢀpurpose.ꢀ“Typical”ꢀparametersꢀareꢀtheꢀaverageꢀvaluesꢀexpectedꢀbyꢀCreeꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀ
informationꢀpurposesꢀonly.ꢀTheseꢀvaluesꢀcanꢀandꢀdoꢀvaryꢀinꢀdifferentꢀapplicationsꢀandꢀactualꢀperformanceꢀcanꢀvaryꢀoverꢀ
time.ꢀAllꢀoperatingꢀparametersꢀshouldꢀbeꢀvalidatedꢀbyꢀcustomer’sꢀtechnicalꢀexpertsꢀforꢀeachꢀapplication.ꢀCreeꢀproductsꢀ
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © ꢀꢄꢂꢃ Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
Rev. 02, 2018-09-25
www.wolfspeed.com
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