GTVA262701FA-V2-R0 [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 â 2690 MHz;
| 型号： | GTVA262701FA-V2-R0 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 â 2690 MHz |
| 文件： | 总8页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTVA262701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
270 W, 48 V, 2620 – 2690 MHz
Description
The GTVA262701FA is a 270-watt GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier
GTVA262701FA
Package H-87265J-2
applications.It features input matching, high efficiency, and a thermal-
ly-enhanced surface-mount package with earless flange.
Features
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
•ꢀ GaN on SiC HEMT technology
•ꢀ Input matched
•ꢀ Typical pulsed CW performance: 10 µs pulse width,
24
20
16
12
8
60
40
20
0
10% duty cycle, 2690 MHz, 48 V
Efficiency
- Output power at P
- Efficiency = 66%
- Gain = 18.1 dB
= 270 W
3dB
Gain
•ꢀ Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
•ꢀ Capable of handling 10:1 VSWR @48 V, 60 W
(WCDMA) output power
-20
-40
-60
PAR @ 0.01% CCDF
•ꢀ Pb-free and RoHS compliant
4
g262701fa-gr1
0
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
= 48 V, I = 320 mA, P = 60 W avg, ƒ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
16.5
40
Typ
17
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
hD
42
—
%
Adjacent Channel Power Ratio
Output PAR @ 0.01% CCDF
ACPR
OPAR
—
–28
6.2
–27
—
dBc
dB
5.5
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04.2, 2019-01-07
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA262701FA
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
= –8 V, I = 10 mA
V
(BR)DSS
D
V
GS
= –8 V, V = 10 V
I
DSS
—
4.5
mA
V
DS
V
= 10 V, I = 32 mA
V
GS(th)
–3.8
–3.0
–2.3
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
55
Unit
V
Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 50 V, I = 320 mA
V
GS(Q)
—
–3.0
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
32
V
I
mA
A
G
Drain Current
I
12
D
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance
R
1.1
°C/W
JC
q
(T
CASE
= 70 °C, 60 W (CW), V
= 48 V, I
= 320 mA,
DQ
DD
2690 MHz)
Ordering Information
Type and Version
GTVA262701FA V2 R0
GTVA262701FA V2 R2
Order Code
Package
Shipping
GTVA262701FA-V2-R0
GTVA262701FA-V2-R2
H-87265J-2
H-87265J-2
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262701FA
3
Typical Performance (data taken in Wolfspeed production test fixture)
Single-carrier WCDMA Broadband
VDD = 48 V, IDQ = 320 mA, POUT = 47.78 dBm
3GPP WCDMA signal, 10 dB PAR
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ= 320 mA, ƒ = 2690 MHz.
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
18
45
40
35
30
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
17
16
15
Gain
Efficiency
2600
ACPU
ACPL
Efficiency
g262701fa-gr3
g262701fa-gr2
2500
2550
2650
2700
2750
25
30
35
40
45
50
55
Average Output Power (dBm)
Frequency (MHz)
Single-carrier WCDMA Broadband
VDD = 48 V, IDQ = 320 mA, POUT = 47.78 dBm
3GPP WCDMA signal, 10 dB PAR
CW Performance
VDD = 48 V, IDQ = 320 mA
series show frequency
-15
-10
-15
-20
-25
-30
-35
20
19
18
17
16
15
14
13
70
Efficiency
60
50
40
30
20
10
0
-20
-25
-30
-35
-40
Gain
ACPU
ACPL
IRL
2620 MHz
2655 MHz
2690 MHz
g262701fa-gr4
g262701fa-gr5
2500
2550
2600
2650
2700
2750
29
33
37
41
45
49
53
57
Output Power (dBm)
Frequency (MHz)
Rev. 04.2, 2019-01-07
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
GTVA262701FA
4
Typical Performance (cont.)
CW Performance, Small Signal
CW Performance at selected VDD
VDD = 48 V, IDQ = 320 mA
IDQ = 320 mA, ƒ = 2690 MHz
series show voltage
22
20
18
16
14
12
10
8
-5
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
0
Efficiency
-10
-15
-20
-25
-30
-35
-40
-45
-50
Gain
Gain
IRL
44 V
48 V
52 V
6
4
g262701fa-gr6
2350
2450
2550
2650
2750
2850
25 29 33 37 41 45 49 53 57
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Pulsed CW signal – 10 µsec, 10% duty cycle; 48 V, 320 mA
P
3dB
Class AB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Z
Z
[W]
Z
[W]
Gain
[dB]
P
[dBm]
P
[W]
Z
[W]
Gain
[dB]
P
[dBm]
P
3dB
[W]
hD
[%]
hD
[%]
source
[W]
L 2f0
load
3dB
3dB
load
3dB
2620 6.90– j4.0 1.4 + j4.3 2.24 – j3.80
2655 6.85 – j3.4 2.3 + j10 2.20 – j3.78
2690 5.90 – j4.8 1.7 + j8.3 2.12 – j3.74
15.2
15.2
15.2
54.71
296
62.3
1.95 – j1.91 17.45
2.26 – j2.27 16.70
1.80 – j2.00 16.80
52.89
194.5
75.1
73.6
75.7
54.80
54.78
302
301
63.4
65.1
53.14
52.65
206.1
184.1
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262701FA
5
Reference Circuit tuned for 2620 to 2690 MHz
Reference Circuit Assembly
DUT
GTVA262701FA V2
Test Fixture Part No.
PCB
LTN/GTVA262701FA-V2
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, ε = 3.66
r
Find Gerber files for this test fixture on the Wolfspeed Web site at http://www.wolfspeed.com/RF
C208
VDD
C103
C104
C203
C204
VGG
C102
C101
C202
GTVA262701FA
L1
OUT_01
C201
R101
C106
R102
C207
RF_OUT
RF_IN
C105
C107
C206
C205
RO4350, 20 MIL
RO4350, 20 MIL (61)
GTVA262701FA_IN_01 (61)
g
t v a 2 6 2 7 0 1 f a _ C D _ 0 2 - 0 9 - 2 0 1 7 - b n
Reference circuit assembly diagram (not to scale)
Rev. 04.2, 2019-01-07
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA262701FA
6
Reference Circuit tuned for 2620 to 2690 MHz
Components Information
Component
Description
Manufacturer
P/N
Input
C101
Capacitor, 33 pF
Capacitor, 1 µF
ATC
ATC800A330JT250T
C4532X7R2A105M230KA
C5750X5R1H106K230KA
EEV-HD1V101P
C102
TDK Corporation
C103
Capacitor, 10 µF
Capacitor, 100 µF
Capacitor, 1.8 pF
Capacitor, 12 pF
Inductor, 22 nH
TDK Corporation
C104
Panasonic Electronic Components
C105
ATC
ATC800A1R8CT250T
ATC800A120JT250T
0805WL220JT
C106, C107
L1
ATC
ATC
R101
Resistor, 5.6 ohms
Resistor, 10 ohms
Panasonic Electronic Components
Panasonic Electronic Components
ERJ-8RQJ5R6V
R102
ERJ-3GEYJ100V
Output
C201
Capacitor, 1.1 pF
Capacitor, 12 pF
Capacitor, 1 µF
Capacitor, 10 µF
Capacitor, 0.9 pF
Capacitor, 0.4 pF
Capacitor, 220 µF
ATC
ATC800A1R1CT250T
ATC800A120JT250T
C4532X7R2A105M230KA
C5750X5R1H106K230KA
ATC800A0R9CT250T
ATC800A0R4CT250T
ECA-2AHG221
C202, C207
C203
ATC
TDK Corporation
C204
TDK Corporation
C205
ATC
C206
ATC
C208
Panasonic Electronic Components
Pinout Diagram (top view)
D
S
Pin
D
Description
Drain Device
G
Gate Device
S
Source (flange)
G
H-37265J-2_03_pd_20 16-12-01-bn
Lead connections for GTVA262701FA
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262701FA
7
Package Outline Specifications
Package H-87265J-2
6.35
[.250]
45° X .64
[.025]
2.59±.51
D
G
[.102±.020]
LID
10.16±.25
[.400±.010]
FLANGE
10.16 ± 0.191
[.400 ± .0075]
(15.34
[.604])
C
L
FLANGE
H-87265J-2_po-03_03-03-2017-bn
R0.63
[R.025] MAX
C
L
10.16±.25
[.400±.010]
SPH 1.57
[.062]
3.63±.38
[.143±.015]
1.02
[.040]
10.16 ± 0.191
[.400 ± .0075]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.13 0.05 mm [.005 .002 inch].
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch].
Rev. 04.2, 2019-01-07
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA262701FA
8
Revision History
01
2016-03-31 Advance
All
All
Data Sheet reflects advance specification for product development
02
2017-03-03 Production
2017-03-31 Production
Data Sheet represents released product specifications, including refer-
ence circuit and updated performance information.
03
1
2
Remove "Integrated ESD protection" from Features
Restructure tables for clarity.
04
2018-07-05 Production
2018-08-02 Production
2019-01-07 Production
All
1
Revised to V2. Converted to Wolfspeed data sheet.
Updated production test spec
04.1
04.2
5
Corrected test fixture p/n
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 04.2, 2019-01-07
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