GTVA262711FA [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 â 2690 MHz;
| 型号： | GTVA262711FA |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 â 2690 MHz |
| 文件： | 总9页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
•ꢀ
TypicalꢀpulsedꢀCWꢀperformance:ꢀ10ꢀµsꢀpulseꢀwidth,ꢀ
10%ꢀdutyꢀcycle,ꢀ2690ꢀMHz,ꢀ48ꢀVꢀ
GTVA262711FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
300 W, 48 V, 2620 – 2690 MHz
Description
TheꢀGTVA262711FAꢀisꢀaꢀ300-wattꢀ(P )ꢀGaNꢀonꢀSiCꢀhighꢀelectronꢀ
3dB
mobilityꢀtransistorꢀ(HEMT)ꢀforꢀuseꢀinꢀmulti-standardꢀcellularꢀpowerꢀ
amplifierꢀapplications.ꢀItꢀfeaturesꢀinputꢀmatching,ꢀhighꢀefficiency,ꢀandꢀ GTVA262711FAꢀ
aꢀthermally-enhancedꢀpackageꢀwithꢀearlessꢀflange.
PackageꢀH-87265J-2
Features
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 10 dB PAR
3.84 MHz bandwidth
•ꢀ GaNꢀonꢀSiCꢀHEMTꢀtechnology
•ꢀ Inputꢀmatched
24
60
40
20
0
Gain
-ꢀOutputꢀpowerꢀatꢀP
-ꢀEfficiencyꢀ=ꢀ62%ꢀꢀ
-ꢀGainꢀ=ꢀ19.1ꢀdB
ꢀ=ꢀ300ꢀW
3dB
20
16
•ꢀ HumanꢀBodyꢀModelꢀClassꢀ1Bꢀ(perꢀANSI/ESDA/
JEDECꢀJS-001)
12
8
Efficiency
•ꢀ Capableꢀofꢀhandlingꢀ10:1ꢀVSWRꢀ@48ꢀV,ꢀ70ꢀWꢀ(CW)ꢀ
outputꢀpower
-20
-40
-60
•ꢀ Pb-freeꢀandꢀRoHS-compliant
PAR @ 0.01% CCDF
4
g262711fa-gr1a
0
25
30
35
40
45
50
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (testedꢀinꢀWolfspeedꢀproductionꢀtestꢀfixture)
ꢀ=ꢀ48ꢀV,ꢀI ꢀ=ꢀ320ꢀmA,ꢀP =ꢀ70ꢀWꢀavg,ꢀƒꢀ=ꢀ2690ꢀMHz.ꢀ3GPPꢀWDMAꢀsignal,ꢀ3.84ꢀMHzꢀchannelꢀbandwidth,ꢀ
V
DD
DQ
OUTꢀ
peak/averageꢀ=ꢀ10ꢀdBꢀ@ꢀ0.01%ꢀCCDFꢀꢀ
Characteristic
Symbol
Min
16ꢀ
Typ
18ꢀ
Max
–ꢀ
Unit
dB
Gainꢀ
ꢀ
ꢀ
ꢀ
ꢀ
G ꢀ
ps
DrainꢀEfficiencyꢀꢀ
hDꢀ
38ꢀ
38.5ꢀ
–ꢀ
%
AdjacentꢀChannelꢀPowerꢀRatioꢀ
OutputꢀPARꢀ@ꢀ0.01%ꢀCCDFꢀ
ꢀ
ꢀ
ACPRꢀ
OPARꢀ
–ꢀ
–27.5ꢀ
6.3ꢀ
–25ꢀ
—ꢀ
dBc
dB
5.7ꢀ
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04.2, 2019-01-07
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA262711FA
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150ꢀ
—ꢀ
Typ
—ꢀ
Max
—ꢀ
Unit
V
Drain-sourceꢀBreakdownꢀVoltageꢀ
Drain-sourceꢀLeakageꢀCurrentꢀ
GateꢀThresholdꢀVoltageꢀ
V
GS
ꢀ=ꢀ–8ꢀV,ꢀI ꢀ=ꢀ32ꢀmAꢀ
V
ꢀ
(BR)DSS
D
V ꢀ=ꢀ–8ꢀV,ꢀV ꢀ=ꢀ10ꢀVꢀ
GS
I ꢀ
DSS
—ꢀ
4.5ꢀ
–2.3ꢀ
mA
V
DS
V
ꢀ=ꢀ10ꢀV,ꢀI ꢀ=ꢀ32ꢀmAꢀ
V ꢀꢀ
GS(th)
–3.8ꢀ
–3.0ꢀ
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0ꢀ
Typ
—ꢀ
Max
50ꢀ
Unit
V
OperatingꢀVoltageꢀ
GateꢀQuiescentꢀVoltageꢀ
ꢀ
V
DD
ꢀ
V
DS
ꢀ=ꢀ50ꢀV,ꢀI ꢀ=ꢀ320ꢀmAꢀ
V ꢀꢀ
GS(Q)
—ꢀ
–3.0ꢀ
—ꢀ
V
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125ꢀ
Unit
V
Drain-sourceꢀVoltageꢀ
Gate-sourceꢀVoltageꢀ
GateꢀCurrentꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
V
DSS
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
V
GS
ꢀ
–10ꢀtoꢀ+2ꢀ
32ꢀ
V
I ꢀ
G
mA
A
DrainꢀCurrentꢀ
I ꢀ
D
12ꢀ
JunctionꢀTemperatureꢀ
T ꢀ
J
225ꢀ
°C
°C
StorageꢀTemperatureꢀRangeꢀ
ꢀ
T
STG
ꢀ
–65ꢀtoꢀ+150ꢀ
Operationꢀaboveꢀtheꢀmaximumꢀvaluesꢀlistedꢀhereꢀmayꢀcauseꢀpermanentꢀdamage.ꢀMaximumꢀratingsꢀareꢀabsoluteꢀratings;ꢀ
exceedingꢀonlyꢀoneꢀofꢀtheseꢀvaluesꢀmayꢀcauseꢀirreversibleꢀdamageꢀtoꢀtheꢀcomponent.ꢀExposureꢀtoꢀabsoluteꢀmaximumꢀratingꢀ
conditionsꢀforꢀextendedꢀperiodsꢀmayꢀaffectꢀdeviceꢀreliability.ꢀForꢀreliableꢀcontinuousꢀoperation,ꢀtheꢀdeviceꢀshouldꢀbeꢀoperatedꢀ
withinꢀtheꢀoperatingꢀvoltageꢀrangeꢀ(V )ꢀspecifiedꢀabove.
DD
Thermal Characteristics
Characteristic
Symbol
Value
Unit
ThermalꢀResistance
R
1.0
°C/W
JC
q
ꢀꢀꢀꢀ(T ꢀ=ꢀ70ꢀ°C,ꢀ70ꢀWꢀ(CW),ꢀV ꢀ=ꢀ48ꢀV,ꢀI ꢀ=ꢀ320ꢀmA,ꢀ
CASE
DD DQ
ꢀꢀꢀꢀ2690ꢀMHz)
Ordering Information
Type and Version
Order Code
Package
Shipping
GTVA262711FAꢀV2ꢀR0ꢀ
GTVA262711FAꢀV2ꢀR2ꢀ
GTVA262711FA-V2-R0ꢀ
GTVA262711FA-V2-R2ꢀ
H-87265J-2ꢀ
H-87265J-2ꢀ
Tapeꢀ&ꢀReel,ꢀ50ꢀpcs
Tapeꢀ&ꢀReel,ꢀ250ꢀpcs
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262711FA
3
Typical Performance (dataꢀtakenꢀinꢀWolfspeedꢀproductionꢀtestꢀfixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 320 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
VDD = 48 V, IDQ = 320 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bankdwidth
24
20
16
12
8
60
40
20
0
24
20
16
12
8
60
40
20
0
Gain
Gain
Efficiency
Efficiency
PAR @ 0.01% CCDF
-20
-40
-60
-20
-40
-60
PAR @ 0.01% CCDF
4
4
g262711fa-gr1c
0
0
g262711fa-gr1b
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ= 320 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
ACP Up
ACP Up
ACP Low
Efficiency
g262711fa-gr2a
ACP Low
Efficiency
g262711fa-gr2b
25
30
35
40
45
50
55
25
30
35
40
45
50
55
Average Output Power (dBm)
Average Output Power (dBm)
Rev. 04.2, 2019-01-07
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA262711FA
4
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Broadband
VDD = 48 V, IDQ = 320 mA, POUT = 48.45 dBm,
3GPP WCDMA signal, 10 dB PAR
VDD = 48 V, IDQ= 320 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
18
50
Gain
17
16
15
14
45
40
35
30
Efficiency
ACP Up
ACP Low
Efficiency
g262711fa-gr2c
g262711fa-gr3
25
30
35
40
45
50
55
2500
2550
2600
2650
2700
2750
Frequency (MHz)
Average Output Power (dBm)
Single-carrier WCDMA Broadband
VDD = 48 V, IDQ = 320 mA, POUT = 48.45 dBm
3GPP WCDMA signal, 10 dB PAR
CW Performance
VDD = 48 V, IDQ = 320 mA
-15
-10
-15
-20
-25
-30
20
70
60
50
40
30
20
10
0
19
18
17
16
15
14
13
Gain
-20
-25
-30
-35
2620 MHz
2655 MHz
2690 MHz
ACP Up
ACP Low
IRL
Efficiency
40 45
Output Power (dBm)
g262711fa-gr5
g262711fa-gr4
25
30
35
50
55
2500
2550
2600
2650
2700
2750
Frequency (MHz)
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262711FA
5
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 48 V, IDQ = 320 mA
CW Performance at various VDD
IDQ = 320 mA, ƒ = 2690 MHz
(series show supply voltage)
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
0
22
20
18
16
14
12
10
-5
-10
-15
-20
-25
-30
-35
Gain
Gain
44 V
48 V
52 V
IRL
Efficiency
g262711fa-gr6
g262711fa-gr7
27
32
37
42
47
52
57
2450
2550
2650
2750
2850
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Pulsed CW signalꢀ–ꢀ10ꢀµsec,ꢀ10%ꢀdutyꢀcycle;ꢀ48ꢀV,ꢀ320ꢀmA
P
3dB
ClassꢀAB
MaxꢀOutputꢀPower
MaxꢀDrainꢀEfficiency
Freq
[MHz]
Z
ꢀ
Z ꢀ
[W]
Z
[W]
Gain
[dB]
P
ꢀ
P
ꢀ
Z
[W]
Gain
[dB]
P
P
ꢀ
3dB
hD
hD
source
[W]
L 2ƒ0
load
3dB
3dB
load
3dBꢀ
[dBm]
55.48
55.46
55.43
[W]
353
352
349
[dBm]
54.52
53.83
54.38
[W]
283
242
274
[%]
[%]
2620 8.3ꢀ–ꢀj4.7 1.2ꢀ+ꢀj0 2.75ꢀ–ꢀj4.56
2655 6.7ꢀ–ꢀj4.3 1.3ꢀ+ꢀj0 2.79ꢀ–ꢀj4.59
2690 5.6ꢀ–ꢀj5.2 1.2ꢀ+ꢀj0 2.85ꢀ–ꢀj4.50
15.5
15.5
15.4
60.7
60.8
60.2
2.5ꢀ–ꢀj2.94
2.14ꢀ–ꢀj2.85
2.46ꢀ–ꢀj3.03
16.8
17.2
16.7
68.0
66.3
65.9
Rev. 04.2, 2019-01-07
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA262711FA
6
Reference Circuit tuned for 2620 to 2690 MHz
DUTꢀ
GTVA262711FAꢀV2
TestꢀFixtureꢀPartꢀNo.ꢀ
PCBꢀ
LTN/GTVA262711FA-V2LTN/GTVA262711FA
Rogersꢀ4350,ꢀ0.508ꢀmmꢀ[.020"]ꢀthick,ꢀ2ꢀoz.ꢀcopper,ꢀεrꢀ=ꢀ3.66
FindꢀGerberꢀfilesꢀforꢀthisꢀtestꢀfixtureꢀonꢀtheꢀWolfspeedꢀWebꢀsiteꢀatꢀhttp://www.wolfspeed.com/RFꢀ
C207
VDD
C103
C203
C104
VGG
C204
C102
C101
C202
GTVA262711FA
L1
OUT_01
C201
R101
R102
C106
C206
RF_IN
RF_OUT
C105
C205
C107
RO4350, 20 MIL
RO4350, 20 MIL
GTVA262711FA_IN_01
g
t v a 2 6 2 7 1 1 f a _ C D _ 0 2 - 0 8 - 2 0 1 7 - b n
Reference circuit assembly diagram (not to scale)
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262711FA
7
Reference Circuit (cont.)
Components Information
Component
Input
Description
Manufacturer
P/N
C101
Capacitor,ꢀ33ꢀpF
Capacitor,ꢀ1ꢀµFꢀꢀꢀꢀꢀ
Capacitor,ꢀ10ꢀµF
Capacitor,ꢀ100ꢀµF
Capacitor,ꢀ1.8ꢀpF
Capacitor,ꢀ12ꢀpF
Inductor,ꢀ22ꢀnH
ATC
ATC800A330JT250T
C102
TDKꢀCorporation
TDKꢀCorporation
C4532X7R2A105M230KA
C5750X5R1H106K230KA
C103
C104
PanasonicꢀElectronicꢀComponentsꢀ EEV-HD1V101P
C105
ATC
ATC
ATC
ATC800A1R8CT250T
ATC800A120JT250T
0805WL220JT
C106,ꢀC107
L1
R101
Resistor,ꢀ5.6ꢀohms
Resistor,ꢀ10ꢀohms
PanasonicꢀElectronicꢀComponents ERJ-8RQJ5R6V
PanasonicꢀElectronicꢀComponents ERJ-3GEYJ100V
R102
Output
C201
Capacitor,ꢀ1.1ꢀpF
Capacitor,ꢀ12ꢀpF
Capacitor,ꢀ1ꢀµFꢀꢀꢀꢀꢀ
Capacitor,ꢀ10ꢀµF
Capacitor,ꢀ0.4ꢀpF
Capacitor,ꢀ220ꢀµFꢀ
ATC
ATC800A1R1CT250T
ATC800A120JT250T
C202,ꢀC206
C203
ATC
TDKꢀCorporation
TDKꢀCorporation
ATC
C4532X7R2A105M230KA
C5750X5R1H106K230KA
ATC800A0R4CT250T
C204
C205
C207
PanasonicꢀElectronicꢀComponentsꢀ ECA-2AHG221
Pinout Diagram (topꢀview)ꢀ
D
S
Pin
Dꢀ
Gꢀ
Sꢀ
Description
DrainꢀDeviceꢀ
GateꢀDeviceꢀ
Sourceꢀ(flange)ꢀ
G
H-37265J-2_03_pd_20 16-12-01-bn
Lead connections for GTVA262711FA
Rev. 04.2, 2019-01-07
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA262711FA
8
Package Outline Specifications
Package H-87265J-2
6.35
[.250]
45° X .64
[.025]
2.59±.51
[.102±.020]
D
LID
10.16±.25
[.400±.010]
FLANGE
10.16 ± 0.191
[.400 ± .0075]
(15.34
[.604])
C
L
G
FLANGE
H-87265J-2_po-03_03-03-2017-bn
R0.63
C
L
[R.025] MAX
10.16±.25
[.400±.010]
SPH 1.57
[.062]
3.63±.38
[.143±.015]
1.02
[.040]
10.16 ± 0.191
[.400 ± .0075]
S
DiagramꢀNotes—unlessꢀotherwiseꢀspecified:
1.ꢀ InterpretꢀdimensionsꢀandꢀtolerancesꢀperꢀASMEꢀY14.5M-1994.
2.ꢀ Primaryꢀdimensionsꢀareꢀmm.ꢀAlternateꢀdimensionsꢀareꢀinches.
3.ꢀ Allꢀtolerancesꢀ±ꢀ0.127ꢀ[.005]ꢀunlessꢀspecifiedꢀotherwise.
4.ꢀ Pins:ꢀDꢀ–ꢀdrain;ꢀGꢀ–ꢀgate;ꢀSꢀ–ꢀsource.
5.ꢀ Leadꢀthickness:ꢀ0.13ꢀ±ꢀ0.05ꢀmmꢀ[.005ꢀ±ꢀ.002ꢀinch].
6.ꢀ Goldꢀplatingꢀthickness:ꢀ1.14ꢀ±ꢀ0.38ꢀmicronꢀ[45ꢀ±ꢀ15ꢀmicroinch].
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Rev. 04.2, 2019-01-07
GTVA262711FA
9
Revision History
01
2016-06-10 Advanceꢀ
All
Proposedꢀspecificationꢀforꢀnewꢀproductꢀdevelopment.
02
2017-03-03 Production All
DataꢀSheetꢀrepresentsꢀreleasedꢀproductꢀspecifications,ꢀincludingꢀrefer-
enceꢀcircuitꢀandꢀupdatedꢀperformanceꢀinformation.
03
2017-03-31 Production 1ꢀ
2
Removeꢀ"IntegratedꢀESDꢀprotection"ꢀfromꢀFeaturesꢀ
Restructureꢀtablesꢀforꢀclarity.ꢀ
04
2018-07-05 Production All
RevisedꢀtoꢀV2.ꢀConvertedꢀtoꢀWolfspeedꢀDataꢀSheet.
Updatedꢀproductionꢀtestꢀspec
04.1
04.2
2018-08-02 Productionꢀ
2019-01-07 Production
1
6
Correctedꢀtestꢀfixtureꢀp/n
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 04.2, 2019-01-07
相关型号：
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Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 â 2690 MHz
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Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 â 2690 MHz
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