PXAC241002FC-V1-R2 [CREE]
Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz;
| 型号： | PXAC241002FC-V1-R2 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 100 W, 28 V, 2300 â 2400 MHz |
| 文件： | 总8页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PXAC241002FC
Thermally-Enhanced High Power RF LDMOS FET
100 W, 28 V, 2300 – 2400 MHz
Description
The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric
design, intended for use in multi-stantdard cellular power amplifier
applications in the 2300 to 2400 MHz frequency band. Features in-
clude dual-path design, input and output matching, high gain and a
thermally-enhanced package with earless flange. Manufactured with
Wolfspeed's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PXAC241002FC
Package H-37248C-4
Features
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ(main) = 230 mA,
•
•
Broadband internal input and output matching
Asymmetric Doherty design
V
GS(peak) = 1.5 V, ƒ = 2400 MHz
3GPP WCDMA signal,
ergoqhgorgn'
- Main: P
- Peak: P
= 40 W Typ
= 60 W Typ
1dB
1dB
10 dB PAR, 3.84 MHz bandwidth
24
20
16
12
8
60
40
20
0
qpjgfq4po5g
•
Typical Pulsed CW performance, 2400 MHz, 28 V,
160 µsec pulse width, 10% duty cycle (Doherty
configuration)
Efficiency
Gain
- Output power at P
- Output power at P
- Efficiency = 53%
- Gain = 15.7 dB
= 34 W
= 81 W
1dB
3dB
-20
-40
-60
PAR @ 0.01% CCDF
•
Capable of handling 10:1 VSWR @28 V, 80 W (CW)
output power
4
•
•
Integrated ESD protection
Human Body Model class 1C (per ANSI/ESDA/
JEDEC JS-001)
c241002fc-gr1
0
25
30
35
40
45
50
•
•
Low thermal resistance
Pb-free and RoHS compliant
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)
= 28 V, I = 230 mA, V = 1.5 V, P = 15 W avg, ƒ = 2400 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
GS(PEAK)
OUT
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
14.8
43
Typ
15.5
45
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
D
—
%
Adjacent Channel Power Ratio
Output PAR@0.01% CCDF
ACPR
OPAR
—
–28
7.6
–26
—
dBc
dB
7.0
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02, 2018-10-04
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
2
PXAC241002FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
1
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
µA
µA
µA
DS
DS
GS
DSS
DSS
= 63 V, V = 0 V
—
—
10
1
GS
Gate Leakagte Current
V
GS
= 10 V, V = 0 V
I
—
—
DS
GSS
On-State Resistance
(Main)
(Peak)
V
GS
= 10 V, V = 0.1 V
R
R
—
0.20
0.15
2.7
1.5
—
—
—
—
DS
DS(on)
DS(on)
V
GS
= 10 V, V = 0.1 V
—
DS
Operating Gate Voltage (Main)
(Peak)
V
= 28 V, I
= 28 V, I
= 150 mA
= 0 mA
V
GS
—
V
DS
DS
DQ
DQ
V
V
GS
—
V
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
V
DSS
V
GS
–6 to +10
225
V
T
°C
°C
J
T
STG
–65 to +150
Thermal Characteristics
T
= 70°C, 15.8 W (CW), 28 V, = 240 mA I , 1.5 V V
, 2350 MHz
GS(peak)
CASE
DQ
Characteristic
Symbol
Value
1.7
Unit
°C/W
°C/W
Thermal Resistance
(Main)
(Peak)
R
JC
JC
R
1.4
Ordering Information
Type and Version
PXAC241002FC V1 R0
PXAC241002FC V1 R2
Order Code
Package
Shipping
PXAC241002FC-V1-R0
PXAC241002FC-V1-R2
H-37248C-4, PP, earless
H-37248C-4, PP, earless
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
3
PXAC241002FC
Typical RF Performance (data taken in production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Broadband
VDD = 28 V, IDQ(main) = 230 mA,
VDD = 28 V, IDQ(main) = 230 mA,
GS(peak) = 1.5 V, POUT = 41.76 dBm,
V
GS(peak) = 1.5V, ƒ = 2400 MHz
V
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
3GPP WCDMA signal, PAR = 10 dB
20
18
16
14
12
60
50
40
30
20
-10
-20
-30
-40
-50
-60
-70
60
50
40
30
20
10
0
Efficiency
Gain
ACPU
ACPL
Efficiency
c241002fc-gr4
c241002fc-gr2
2150
2250
2350
2450
2550
25
30
35
40
45
50
Frequency (MHz)
Average Output Power (dBm)
Single-carrier WCDMA Broadband
CW Performance
VDD = 28 V, IDQ(main) = 230 mA,
VDD = 28 V, IDQ(main) = 230 mA,
VGS(peak) = 1.5 V, POUT = 41.76 dBm,
VGS(peak) = 1.5 V
3GPP WCDMA signal, PAR = 10 dB
2300 MHz Gain
2350 MHz Gain
2400 MHz Gain
2300 MHz Eff
2350 MHz Eff
2400 MHz Eff
20
19
18
17
16
15
14
13
70
-10
-15
-20
-25
-30
-35
-40
-5
60
50
40
30
20
10
0
-10
-15
-20
-25
-30
-35
ACPU
ACPL
IRL
c241002fc-gr5
c241002fc-gr3
29
33
37
41
45
49
53
2150
2250
2350
2450
2550
Output Power (dBm)
Frequency (MHz)
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
4
PXAC241002FC
Typical RF Performance (cont.)
CW Performance at selected VDD
IDQ(main) = 230 mA, VGS(peak) = 1.5 V
ƒ = 2400 MHz
CW Performance Small Signal
VDD = 28 V, IDQ(main) = 230 mA,
VGS(peak) = 1.5V
24 V Gain
18
16
14
12
10
8
-10
-12
-14
-16
-18
-20
-22
-24
-26
20
19
18
17
16
15
14
13
70
60
50
40
30
20
10
0
28 V Gain
32 V Gain
24 V Eff
28 V Eff
32 V Eff
Gain
6
IRL
4
c241002fc-gr7
c241002fc-gr6
2
29
33
37
41
45
49
53
2150
2250
2350
2450
2550
Output Power (dBm)
Frequency (MHz)
Load Pull Performance, Doherty Configuration
Main Side – Pulsed CW` signal: 160 µs, 10% duty cycle, V = 28 V, I = 240 mA, class AB
DD
DQ
P
1dB
Max Output Power
Max Drain Efficiency
Zs
[]
Zl
[]
Zl
[]
Freq
[MHz]
Gain
[dB]
P
P
[W]
Gain
[dB]
P
P
1dB
[W]
D
D
1dB
1dB
1dB
[dBm]
46.81
46.76
46.70
[dBm]
[%]
54.9
53.3
54.1
[%]
2300
2350
2400
12.95 – j25.61 7.27 – j9.24
19.55 – j24.45 7.18 – j9.73
24.79 – j25.22 7.26 – j9.51
18.7
18.3
18.6
48
10.89 – j3.58
10.64 – j3.34
9.41 – j2.55
20.6
20.5
20.7
45.4
34
63.7
63.3
63.1
47
45.2
33
47
44.9
31
Peak Side – Pulsed CW signal: 160 µs, 10% duty cycle, V = 28 V, V
= 1,400 mA, class C
DD
DGS(peak)
P
1dB
Max Output Power
Max Drain Efficiency
Zs
[]
Zl
[]
Zl
[]
Freq
[MHz]
Gain
[dB]
P
P
[W]
Gain
[dB]
P
P
3dB
[W]
D
D
1dB
3dB
1dB
[dBm]
48.67
48.58
48.40
[dBm]
[%]
[%]
2300
2350
2400
8.50 – j15.45 3.77 – j6.16
12.98 – j14.49 3.53 – j6.59
16.77 – j15.19 3.73 – j6.81
14.5
14.0
14.0
74
59.2
56
7.27 – j0.08
6.05 – j0.44
5.26 – j1.22
15.6
15.2
15.5
45.8
38
68.9
68.3
69.3
72
46.0
40
69
54.5
46.5
44
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
5
PXAC241002FC
Reference Circuit, 2300 – 2400 MHz
Reference Circuit Assembly
DUT
PXAC241002FC V1
Test Fixture Part No.
PCB
LTA/PXAC241002FC V1
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, r = 3.66
RO4350, 20 MIL
RO4350, 20 MIL
VDD
VGS(main)
C209
C104
R101
C210
C208
C207
C102
C105
C103
C201
C202
C203
R103
C204
C101
C106
U1
RF_IN
RF_OUT
VDD
C107
C205
C206
R102
C108
C109
VGS(peak)
C211
C212
C214
C213
PXAC241002FC_IN_02
PXAC241002FC_OUT_02
p
x a c 2 4 1 0 0 2 f c _ C D _ 2 0 1 7 - 9 - 2 6 - b n
Reference circuit assembly diagram (not to scale)
Components Information for Circuit Assembly
Component
Input
Description
Manufacturer
P/N
C101, C105, C106, C108
C102, C103, C107
C104, C109
R101, R102
R103
Capacitor, 18 pF
Capacitor, 0.5 pF
Capacitor, 10 µF, 50 V
Resistor, 10
ATC
ATC600F180JW250T
ATC600F0R5CW250T
UMK325C7106MM-T
ERJ-3GEYJ100V
C8A50Z4A
ATC
Taiyo Yuden
Panasonic Electronic Components
Resistor, 50
Anaren
Anaren
U1
Hybrid coupler
1P603AS
table continued next page
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
6
PXAC241002FC
Reference Circuit (cont.)
Components Information for circuit assembly (cont.)
Component
Output
Description
Manufacturer
P/N
C201, C204, C206
C202
Capacitor, 18 pF
Capacitor, 0.5 pF
Capacitor, 5.1 pF
Capacitor, 0.8 pF
Capacitor, 10 µF, 50 V
ATC
ATC600F180JW250T
ATC600F0R5CW250T
ATC600F5R1CW250T
ACT600F0R8CW250T
UMK325C7106MM-T
ATC
C203
ATC
C205
ATC
C207, C208, C209, C211,
C212, C213
Taiyo Yuden
C210, C214
Capacitor, 220 µF
Panasonic Electronic Components
ECA-2AHG221
Pinout Diagram (top view)
S
Main
Peak
Pin
D1
D2
G1
G2
S
Description
Drain Device 1 (main)
Drain Device 2 (peak)
Gate Device 1 (main)
Gate Device 2 (peak)
Source (flange)
D1
D2
Device 1
Device 2
H-37248-4_pd_10-10-2012
G1
G2
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
7
PXAC241002FC
Package Outline Specifications
Package H-37248C-4
(8.89
[.350])
(5.08
45° X 2.72
[.107]
[.200])
C
L
4.83±0.51
[.190±0.020]
D1
D2
9.78
[.385]
(19.43
[.765])
C
L
G1
G2
+0.38
R0.51
–0.13
+.015
R.020
–.005
3.81
[.150]
12.70
[.500]
3.78±0.25
[.149±0.010]
19.81±0.20
[.780±0.008]
1.02
[.040]
C66065-A0004-C446-01-0027 : h-37248c-4_PO_11-02-2016
C
L
SPH 1.57
[.062]
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm, alternate dimensions are inches
3. All tolerances 0.127 ꢀ0.005ꢁ
4. Pins: D1, D2 – drain, G1, G2 – gate, S – source (flange)
5. Lead thickness: 0.13 0.05 ꢀ0.005 0.002ꢁ
6. Gold plating thickness: 1.14 0.38 micron ꢀ45 15 microinchꢁ
Rev. 02, 2018-10-04
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PXAC241002FC
8
Revision History
Revision
Date
Data Sheet
Advance
Page
All
Subjects (major changes at each revision)
01
02
2014-11-12
2017-10-04
Proposed specifications for new product development
Production
All
Information for production-released device, including firm specifications, operating
performance, and reference circuit specifications
02
2018-10-04
Production
All
Converted to Wolfspeed Data Sheet
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2014-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
Rev. 02, 2018-10-04
www.wolfspeed.com
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