CTL0502NS-R3 [CTMICRO]

N-Channel Enhancement MOSFET;


型号：	CTL0502NS-R3
厂家：	CT Micro International Corporation
描述：	N-Channel Enhancement MOSFET
文件：	总11页 (文件大小：772K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CTL0502NS-R3

N-Channel Enhancement MOSFET

Features

Description

The CTL0502NS-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications.

Drain-Source Breakdown Voltage V_DSS20 V

Drain-Source On-Resistance

•

_DS(ON)21m

Ω

, at V_GS= 4.5V, I_D= 5.0A

, at V_GS= 2.5V, I_D= 3.5A

, at V_GS= 1.8V, I_D= 2.8A

R_DS(ON)24m

R_DS(ON)31m

TA=25

•

Continuous Drain Current at

I_D= 5.0A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

Applications

•

Power Management

•

Lithium Ion Battery

Package Outline

Schematic

Drain

Gate

Source

Gate

Source

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Absolute Maximum Rating at 25^oC

Symbol

Parameters

Test Conditions

Min

Notes

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current @TA=25

5.0

Pulsed Drain Current

IDM

Total Power Dissipation @TA=25

1.4

°C

Storage Temperature Range

-55 to 150

STG

Operating Junction Temperature Range

Thermal Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units Notes

Thermal Resistance

Junction-Ambient (t=10s)

ӨJA4

^oC /W

1,4

175

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Electrical Characteristics T_A= 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

= 250µA

DS = 20V, VGS = 0V

Min

Typ

Max

Units Notes

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

GS= 0V, I

VDSS

DSS

µ A

IGSS

GS = 12V, VDS = 0V

100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units Notes

V_GS= 4.5V, I_D= 3.0A

mΩ

V_GS

I_D

= 2.5V, = 2.6A

Drain-Source On-Resistance

Gate-Source Threshold Voltage

mΩ

R_DS(ON)

I_D

= 1.8V, = 1.0A

VGS(th)

I_D

0.4

---

1.4

= VDS, I =250µA

Dynamic Characteristics

Symbol

Parameters

Test Conditions

V_GS

Min

Typ

668

118

Max

Units Notes

Input Capacitance

ISS

=0V,

Output Capacitance

DS =10V

f=1MHz

OSS

RSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Turn-On Delay Time

Rise Time

Test Conditions

V_DS= 5V ,

Min

Typ

10.5

Max

Units

Notes

D(ON)

V_GS= 4.5V,

R_G= 6Ω,

Turn-Off Delay Time

Fall Time

29.5

4.5

7.0

1.0

1.5

D(OFF)

I_D=3.6A

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS= 10V ,

V_GS= 4.5V,

I_D= 3.6A

CT Micro

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Drain-Source Diode Characteristics

Symbol

Parameters

Test Conditions

= 5.0

Min

Typ

Max

1.2

Units

Notes

Body Diode Forward Voltage

Body Diode Continuous Current

GS = 0V, I

VSD

5.0

ISD

Note:

1. The power dissipation is limited by 150

2. Device mounted on a glass-epoxy board

junction temperature.

FR-4

25.4 × 25.4 mm .

2 Oz Copper

Actual Size

3. The data tested by pulsed , pulse width

4. Thermal Resistance follow JESD51-3.

300 s , duty cycle

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Typical Characteristic Curves

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CTL0502NS-R3

N-Channel Enhancement MOSFET

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Test Circuits & Waveforms

Figure 9: Gate Charge Test Circuit

Figure 10: Gate Charge Waveform

Figure 11: Switching Time Test Circuit

Figure 12: Switching Time Waveform

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Package Dimension (SC-59)

Recommended pad layout for surface mount leadform

CT Micro

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Marking Information

0 5 0 2

0502: Device Number

Ordering Information

Part Number

Description

Quantity

CTL0502NS-R3

SC-59 Reel

3000 pcs

CT Micro

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CTL0502NS-R3

N-Channel Enhancement MOSFET

Reflow Profile

Profile Feature

Pb-Free Assembly Profile

150°C

Temperature Min. (Tsmin)

Temperature Max. (Tsmax)

Time (ts) from (Tsmin to Tsmax)

Ramp-up Rate (t_Lto t_P)

200°C

60-120 seconds

3°C/second max.

217°C

Liquidous Temperature (T_L)

Time (t_L) Maintained Above (T_L)

Peak Body Package Temperature

Time (t_P) within 5°C of 260°C

Ramp-down Rate (T_Pto T_L)

Time 25°C to Peak Temperature

60 – 150 seconds

260°C +0°C / -5°C

30 seconds

6°C/second max

8 minutes max.

CT Micro

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Rev 3

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CTL0502NS-R3

N-Channel Enhancement MOSFET

DISCLAIMER

CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

______________________________________________________________________________________

CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body, or (b) support or sustain life,

or (c) whose failure to perform when properly used

in accordance with instruction for use provided in

the labelling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life

support device or system whose failure to perform

can be reasonably expected to cause the failure of

the life support device or system, or to affect its

safety or effectiveness.

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