CTL190NS10-T52 [CTMICRO]

N-Channel Enhancement MOSFET;


型号：	CTL190NS10-T52
厂家：	CT Micro International Corporation
描述：	N-Channel Enhancement MOSFET
文件：	总11页 (文件大小：815K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CTL190NS10-T52

N-Channel Enhancement MOSFET

Features

Description

The CTL190NS10-T52 is the N-Channel logic

enhancement mode power field effect transistors

are produced using high cell density, DMOS trench

technology. This high density process is especially

tailored to minimize on-state resistance. These

devices are particularly suited for low voltage

application.

Drain-Source Breakdown Voltage V_DSS100V

Drain-Source On-Resistance

•

_DS(ON)65m

Ω

, at V_GS= 10V, I_D= 12A

, at V_GS= 5V, I_D= 12A

R_DS(ON)75m

19A

•

Continuous Drain Current at T_C=25 I_D=

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

Applications

•

DC/DC Converter

Load Switch

LCD Display inverter

Package Outline

Schematic

Drain

Gate

Source

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 1

CTL190NS10-T52

N-Channel Enhancement MOSFET

Absolute Maximum Rating at 25^oC

Symbol

Parameters

Test Conditions

Min

Note

Drain-Source Voltage

100

Gate-Source Voltage

Continuous Drain Current @TC=25

Pulsed Drain Current

IDM

Total Power Dissipation @TC=25

°C

Storage Temperature Range

-55 to 150

STG

Operating Junction Temperature Range

Thermal Characteristics

Symbol

Parameters

Thermal Resistance

Junction-Case

Test Conditions

Min

Typ

Max

2.8

Units Notes

ӨJC

^oC /W

1,4

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 2

CTL190NS10-T52

N-Channel Enhancement MOSFET

Electrical Characteristics T_A= 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

= 250µA

DS = 80V, VGS = 0V

Min

Typ

Max

Units Notes

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

GS= 0V, I

100

VDSS

DSS

µA

IGSS

GS = 20V, VDS = 0V

100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units Notes

GS = 10V, I

GS = 5V, I

GS = VDS, I

= 12A

=250µA

mΩ

Drain-Source On-Resistance

Gate-Source Threshold Voltage

R_DS(ON)

1.0

2.5

VGS(th)

Dynamic Characteristics

Symbol

Parameters

Test Conditions

V_GS

Min

Typ

1120

Max

Units Notes

Input Capacitance

ISS

=0V,

Output Capacitance

DS =15V

f=1MHz

OSS

RSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Turn-On Delay Time

Rise Time

Test Conditions

Min

Typ

25.5

429

45.5

91.2

16.8

7.3

Max

Units

Notes

D(ON)

V_DS= 50V , R_G= 4.7Ω

V_GS= 5V, R = 3.3Ω

Turn-Off Delay Time

Fall Time

D(OFF)

Total Gate Charge

Gate-Source Charge

Gate-Drain (Miller) Charge

V_DS= 80V ,

V_GS= 5V,

I_D=15.7A

9.7

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 3

CTL190NS10-T52

N-Channel Enhancement MOSFET

Drain-Source Diode Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

1.3

Units

Notes

Body Diode Forward Voltage

Body Diode Continuous Current

GS = 0V, ISD = 1A

VSD

ISD

Note:

1.The power dissipation is limited by 150 junction temperature.

The data tested by pulsed , pulse width

300 s , duty cycle

3.Thermal Resistance follow JESD51-3.

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 4

CTL190NS10-T52

N-Channel Enhancement MOSFET

Typical Characteristic Curves

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 5

CTL190NS10-T52

N-Channel Enhancement MOSFET

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 6

CTL190NS10-T52

N-Channel Enhancement MOSFET

Test Circuits & Waveforms

Figure 9: Gate Charge Test Circuit

Figure 10: Gate Charge Waveform

Figure 11: Switching Time Test Circuit

Figure 12: Switching Time Waveform

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 7

CTL190NS10-T52

N-Channel Enhancement MOSFET

Package Dimension (TO-252)

Dimensions in mm unless otherwise stated

Recommended pad layout for surface mount leadform

Dimensions in mm unless otherwise stated

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 8

CTL190NS10-T52

N-Channel Enhancement MOSFET

Marking Information

：Denotes “ CT Micro”

：Device Number

：Fiscal Year

190NS10

：Work Week

YWWA

：Production Code

Ordering Information

Part Number

Description

Quantity

CTL190NS10-T52

TO-252 Reel

2500 pcs

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 9

CTL190NS10-T52

N-Channel Enhancement MOSFET

Reflow Profile

Profile Feature

Pb-Free Assembly Profile

150°C

Temperature Min. (Tsmin)

Temperature Max. (Tsmax)

Time (ts) from (Tsmin to Tsmax)

Ramp-up Rate (t_Lto t_P)

200°C

60-120 seconds

3°C/second max.

217°C

Liquidous Temperature (T_L)

Time (t_L) Maintained Above (T_L)

Peak Body Package Temperature

Time (t_P) within 5°C of 260°C

Ramp-down Rate (T_Pto T_L)

Time 25°C to Peak Temperature

60 – 150 seconds

260°C +0°C / -5°C

30 seconds

6°C/second max

8 minutes max.

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 10

CTL190NS10-T52

N-Channel Enhancement MOSFET

DISCLAIMER

CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

______________________________________________________________________________________

CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body, or (b) support or sustain life,

or (c) whose failure to perform when properly used

in accordance with instruction for use provided in

the labelling, can be reasonably expected to result

in significant injury to the user.

2. A critical component is any component of a life

support device or system whose failure to perform

can be reasonably expected to cause the failure of

the life support device or system, or to affect its

safety or effectiveness.

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 11

相关型号：