SDEB12101T-3R3MSD [CYNTEC]

Sealed Choke Coil SDEB12101T MSD type;
SDEB12101T-3R3MSD
型号: SDEB12101T-3R3MSD
厂家: Cyntec    Cyntec
描述:

Sealed Choke Coil SDEB12101T MSD type

文件: 总4页 (文件大小:213K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DOCUMENT  
REVISION  
PAGE  
: SDEB12101T-000  
: A5  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
: 1 OF 4  
Sealed Choke Coil SDEB12101T MSD type  
Features  
Low profile1.25mm x 1.0mm x 1.0mm  
Low coil resistance with large currents.  
High magnetic shield construction should actualize high resolution for EMC protection.  
100% lead (Pb) free meet RoHS standard  
Application  
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..  
Outline Dimensions  
W
Code  
L
Dimensions (mm)  
1.0 0.2  
L
T
W
1.25 0.2  
T
1.0 Max  
Note This graph is in regard to outline dimensions spec. For outer appearance, please refer to actual product.  
Recommend Land Pattern Dimensions  
The customer shall determine the land dimensions shown below after confirming and safety.  
B
A
B
C
1.2  
0.4  
A
1.4  
Unit : mm  
C
Sep., 2019  
DOCUMENT  
REVISION  
PAGE  
: SDEB12101T-000  
: A5  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
: 2 OF 4  
Specifications  
L0  
Inductance  
( H )  
Heat Rating Current  
DC Amps. Idc ( A )  
Saturation Current  
DC Amps. Isat ( A )  
Rdc ( m)  
Part Number  
Typical  
Maximum  
Typical  
Maximum  
Typical  
Maximum  
@ (0A)  
SDEB12101T-R22MSD  
SDEB12101T-R33MSD  
SDEB12101T-R47MSD  
SDEB12101T-1R0MSD  
SDEB12101T-1R5MSD  
SDEB12101T-2R2MSD  
SDEB12101T-3R3MSD  
SDEB12101T-4R7MSD  
SDEB12101T-100MSD  
0.22  
0.33  
0.47  
1.0  
50  
66  
60  
80  
1.90  
1.70  
1.55  
1.05  
0.90  
0.83  
0.58  
0.48  
0.36  
1.71  
1.53  
1.40  
0.95  
0.81  
0.75  
0.52  
0.43  
0.32  
2.40  
2.10  
1.55  
1.15  
0.82  
0.68  
0.52  
0.46  
0.35  
2.16  
1.90  
1.40  
1.04  
0.74  
0.61  
0.47  
0.41  
0.32  
80  
96  
167  
230  
281  
430  
623  
1,250  
201  
276  
338  
516  
748  
1,500  
1.5  
2.2  
3.3  
4.7  
10.0  
*If you require another part number please contact with us.  
**Inductance Tolerance 20%  
Note 1.All test data is referenced to 25ambient.  
Note 2.Test Condition:1MHz, 1.0Vrms  
Note 3.Idc : DC current (A) that will cause an approximate T of 40℃  
Note 4.Isat : DC current (A) that will cause L0 to drop approximately 30%  
Note 5.Operating Temperature Range -55to + 125℃  
Note 6.The part temperature (ambient + temp rise) should not exceed 125under the worst case operating  
conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling  
provision all affect the part temperature. Part temperature should be verified in the end application.  
Note 7.The rated current as listed is either the saturation current or the heating current depending on which value is  
lower.  
Sep., 2019  
DOCUMENT  
REVISION  
PAGE  
: SDEB12101T-000  
: A5  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
: 3 OF 4  
Current Characteristic  
SDEB12101T-R22MSD  
0.24  
0.20  
0.16  
0.12  
0.08  
0.04  
0.00  
80  
70  
60  
50  
40  
30  
20  
10  
0
SDEB12101T-R33MSD  
0.42  
0.35  
0.28  
0.21  
0.14  
0.07  
0.00  
80  
70  
60  
50  
40  
30  
20  
10  
0
INDUCTANCE(μH)  
TEMP. RISE()  
INDUCTANCE(μH)  
TEMP. RISE()  
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0  
DC BIAS(Amps)  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
2.1  
2.4  
DC BIAS(Amps)  
SDEB12101T-R47MSD  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
70  
60  
50  
40  
30  
20  
10  
0
1.20  
1.00  
0.80  
0.60  
0.40  
0.20  
0.00  
100  
80  
60  
40  
20  
0
SDEB12101T-1R0MSD  
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
DC BIAS(Amps)  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
DC BIAS(Amps)  
2.70  
2.25  
1.80  
1.35  
0.90  
0.45  
0.00  
SDEB12101T-2R2MSD  
70  
60  
50  
40  
30  
20  
10  
0
1.80  
1.50  
1.20  
0.90  
0.60  
0.30  
0.00  
SDEB12101T-1R5MSD  
90  
75  
60  
45  
30  
15  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1  
DC BIAS(Amps)  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
DC BIAS(Amps)  
SDEB12101T-3R3MSD  
4.20  
3.50  
2.80  
2.10  
1.40  
0.70  
0.00  
100  
6.00  
5.00  
4.00  
3.00  
2.00  
1.00  
0.00  
100  
80  
60  
40  
20  
0
SDEB12101T-4R7MSD  
80  
60  
40  
20  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
0.00  
0.10  
0.20  
0.30  
0.40  
0.50  
0.60  
0.70  
DC BIAS(Amps)  
DC BIAS(Amps)  
\
Sep., 2019  
DOCUMENT  
REVISION  
PAGE  
: SDEB12101T-000  
: A5  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
: 4 OF 4  
SDEB12101T-100MSD  
12.0  
10.0  
8.0  
100  
80  
60  
40  
20  
0
INDUCTANCE(μH)  
6.0  
TEMP. RISE()  
4.0  
2.0  
0.0  
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50  
DC BIAS(Amps)  
Sep., 2019  

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