SDER041H-470MS [CYNTEC]

Sealed Choke Coil SDER041H type;
SDER041H-470MS
型号: SDER041H-470MS
厂家: Cyntec    Cyntec
描述:

Sealed Choke Coil SDER041H type

文件: 总6页 (文件大小:238K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DOCUMENT : SDER041H-000  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
REVISION  
PAGE  
: B3  
: 1 OF 6  
Sealed Choke Coil SDER041H type  
Features  
Low profile4.0mm x 4.0mm x 1.8mm  
Low coil resistance with large currents.  
High magnetic shield construction should actualize high resolution for EMC protection.  
100% lead (Pb) free meet RoHS standard  
Application  
Cellular phones, LCD displays, HDDs, DVCs, DSCs, PDAs etc..  
Outline Dimensions  
W
Code  
L
Dimensions (mm)  
4.0 0.2*  
L
T
W
4.0 0.2*  
T
1.8 Max*  
* Dimensions are of the case not including the  
termination. For maximum overall dimensions  
including the termination, add 0.1mm.  
NoteThis graph is in regard to outline dimensions spec. For outer appearance, please refer to actual product.  
Oct., 2019  
DOCUMENT : SDER041H-000  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
REVISION  
PAGE  
: B3  
: 2 OF 6  
Marking  
The inductor is marked with a 3-digit code  
Example – – 10H 100  
100  
Recommend Land Pattern Dimensions  
The customer shall determine the land dimensions shown below after confirming and safety.  
B
A
B
C
3.6  
1.8  
4.1  
A
Unit : mm  
C
Oct., 2019  
DOCUMENT : SDER041H-000  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
REVISION  
PAGE  
: B3  
: 3 OF 6  
Specifications  
L0  
Inductance  
( H )  
@ (0A)  
0.47  
0.68  
1.0  
Heat Rating Current  
DC Amps. Idc ( A )  
Saturation Current  
DC Amps. Isat ( A )  
Rdc ( m)  
Part Number  
Typical  
Maximum  
Typical  
Maximum  
Typical  
Maximum  
SDER041H-R47MS  
SDER041H-R68MS  
SDER041H-1R0MS  
SDER041H-1R2MS  
SDER041H-1R5MS  
SDER041H-1R8MS  
SDER041H-2R2MS  
SDER041H-3R3MS  
SDER041H-4R7MS  
SDER041H-5R6MS  
SDER041H-6R8MS  
SDER041H-8R2MS  
SDER041H-100MS  
SDER041H-150MS  
SDER041H-220MS  
SDER041H-330MS  
SDER041H-470MS  
SDER041H-680MS  
SDER041H-101MS  
14  
19  
18  
25  
5.50  
5.00  
4.40  
3.80  
3.40  
3.20  
3.10  
2.75  
2.30  
2.20  
2.10  
1.80  
1.50  
1.45  
1.20  
0.90  
0.80  
0.58  
0.52  
5.00  
4.50  
4.00  
3.40  
3.05  
2.85  
2.80  
2.50  
2.07  
2.00  
1.90  
1.60  
1.35  
1.30  
1.08  
0.81  
0.72  
0.52  
0.47  
5.70  
5.60  
4.20  
3.70  
3.60  
3.20  
3.10  
2.45  
2.05  
1.90  
1.75  
1.65  
1.60  
1.10  
0.95  
0.80  
0.70  
0.48  
0.46  
5.10  
5.00  
3.80  
3.30  
3.20  
2.90  
2.80  
2.20  
1.85  
1.70  
1.60  
1.44  
1.40  
1.00  
0.85  
0.75  
0.60  
0.43  
0.41  
20  
25  
1.2  
25  
30  
1.5  
33  
40  
1.8  
34  
41  
2.2  
35  
45  
3.3  
45  
56  
4.7  
69  
83  
5.6  
80  
96  
6.8  
90  
115  
132  
169  
222  
315  
486  
594  
1062  
1854  
8.2  
105  
134  
185  
250  
405  
495  
885  
1545  
10.0  
15.0  
22.0  
33.0  
47.0  
68.0  
100.0  
*If you require another part number please contact with us.  
**Inductance Tolerance 20%  
Note 1.All test data is referenced to 25ambient.  
Note 2.Test Condition:100KHz, 1.0Vrms  
Note 3.Idc : DC current (A) that will cause an approximate T of 40℃  
Note 4.Isat : DC current (A) that will cause L0 to drop approximately 30%  
Note 5.Operating Temperature Range -55to + 125℃  
Note 6.The part temperature (ambient + temp rise) should not exceed 125under the worst case operating  
conditions. Circuit design, component placement, PCB trace size and thickness, airflow and other cooling  
provision all affect the part temperature. Part temperature should be verified in the end application.  
Note 7.The rated current as listed is either the saturation current or the heating current depending on which value is  
lower.  
Oct., 2019  
DOCUMENT : SDER041H-000  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
REVISION  
PAGE  
: B3  
: 4 OF 6  
Current Characteristic  
SDER041H-R47MS  
0.60  
0.50  
0.40  
0.30  
0.20  
0.10  
0.00  
90  
75  
60  
45  
30  
15  
0
SDER041H-R68MS  
0.84  
0.70  
0.56  
0.42  
0.28  
0.14  
0.00  
90  
75  
60  
45  
30  
15  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5  
DC BIAS(Amps)  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5  
DC BIAS(Amps)  
SDER041H-1R0MS  
1.20  
1.00  
0.80  
0.60  
0.40  
0.20  
0.00  
100  
80  
60  
40  
20  
0
SDER041H-1R2MS  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
100  
80  
60  
40  
20  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6  
DC BIAS(Amps)  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0  
DC BIAS(Amps)  
1.80  
1.50  
1.20  
0.90  
0.60  
0.30  
0.00  
SDER041H-1R5MS  
70  
60  
50  
40  
30  
20  
10  
0
2.10  
1.75  
1.40  
1.05  
0.70  
0.35  
0.00  
SDER041H-1R8MS  
70  
60  
50  
40  
30  
20  
10  
0
INDUCTANCE(μH)  
TEMP. RISE()  
INDUCTANCE(μH)  
TEMP. RISE()  
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6 3.9 4.2  
DC BIAS(Amps)  
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8  
DC BIAS(Amps)  
2.40  
2.00  
1.60  
1.20  
0.80  
0.40  
0.00  
80  
4.20  
3.50  
2.80  
2.10  
1.40  
0.70  
0.00  
70  
60  
50  
40  
30  
20  
10  
0
SDER041H-2R2MS  
SDER041H-3R3MS  
70  
60  
50  
40  
30  
20  
10  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3 3.6  
DC BIAS(Amps)  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
DC BIAS(Amps)  
Oct., 2019  
DOCUMENT : SDER041H-000  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
REVISION  
PAGE  
: B3  
: 5 OF 6  
5.40  
4.50  
3.60  
2.70  
1.80  
0.90  
0.00  
100  
80  
60  
40  
20  
0
SDER041H-4R7MS  
8.4  
7.0  
5.6  
4.2  
2.8  
1.4  
0.0  
SDER041H-6R8MS  
100  
80  
60  
40  
20  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8  
DC BIAS(Amps)  
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3  
DC BIAS(Amps)  
SDER041H-100MS  
9.6  
8.0  
90  
75  
60  
45  
30  
15  
0
12.0  
10.0  
8.0  
100  
80  
60  
40  
20  
0
SDER041H-8R2MS  
6.4  
4.8  
3.2  
1.6  
0.0  
INDUCTANCE(μH)  
INDUCTANCE(μH)  
6.0  
TEMP. RISE()  
TEMP. RISE()  
4.0  
2.0  
0.0  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
DC BIAS(Amps)  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
DC BIAS(Amps)  
SDER041H-220MS  
27.0  
22.5  
18.0  
13.5  
9.0  
75  
60  
45  
30  
15  
0
18.0  
75  
60  
45  
30  
15  
0
SDER041H-150MS  
15.0  
12.0  
9.0  
INDUCTANCE(μH)  
TEMP. RISE()  
INDUCTANCE(μH)  
TEMP. RISE()  
6.0  
4.5  
3.0  
0.0  
0.0  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0  
DC BIAS(Amps)  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
DC BIAS(Amps)  
SDER041H-330MS  
SDER041H-470MS  
54  
45  
36  
27  
18  
9
60  
50  
40  
30  
20  
10  
0
42.0  
35.0  
28.0  
21.0  
14.0  
7.0  
75  
60  
45  
30  
15  
0
INDUCTANCE(μH)  
INDUCTANCE(μH)  
TEMP. RISE()  
TEMP. RISE()  
0.0  
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2  
DC BIAS(Amps)  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
DC BIAS(Amps)  
Oct., 2019  
DOCUMENT : SDER041H-000  
CYNTEC CO., LTD.  
乾坤科技股份有限公司  
REVISION  
PAGE  
: B3  
: 6 OF 6  
120  
100  
80  
60  
40  
20  
0
75  
60  
45  
30  
15  
0
SDER041H-680MS  
84.0  
70.0  
56.0  
42.0  
28.0  
14.0  
0.0  
75  
60  
45  
30  
15  
0
SDER041H-101MS  
INDUCTANCE(μH)  
TEMP. RISE ()  
INDUCTANCE(μH)  
TEMP. RISE(℃)  
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
DC BIAS(Amps)  
0.00 0.06 0.12 0.18 0.24 0.30 0.36 0.42 0.48 0.54 0.60 0.66  
DC BIAS(Amps)  
Oct., 2019  

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