MT55V512V32FT-10 [CYPRESS]
ZBT SRAM, 512KX32, 7.5ns, CMOS, PQFP100, PLASTIC, TQFP-100;型号: | MT55V512V32FT-10 |
厂家: | CYPRESS |
描述: | ZBT SRAM, 512KX32, 7.5ns, CMOS, PQFP100, PLASTIC, TQFP-100 静态存储器 |
文件: | 总34页 (文件大小:468K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
MT55L1MY18F, MT55V1MV18F,
MT55L512Y32F, MT55V512V32F,
MT55L512Y36F, MT55V512V36F
3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O
18Mb ZBT® SRAM
Features
Figure 1: 100-Pin TQFP
JEDEC-Standard MS-026 BHA (LQFP)
•
•
High frequency and 100 percent bus utilization
Single 3.3V ±± percent or 2.±V ±± percent power
supply
•
•
Separate 3.3V ±± percent or 2.±V ±± percent isolated
output buffer supply (VDDQ)
Advanced control logic for minimum control signal
interface
•
•
•
Individual byte write controls may be tied LOW
Single R/W# (read/write) control pin/ball
CKE# pin/ball to enable clock and suspend
operations
Three chip enables for simple depth expansion
Clock-controlled and registered addresses, data
I/Os, and control signals
•
•
•
•
Internally self-timed, fully coherent write
Internally self-timed, registered outputs to
eliminate the need to control OE#
SNOOZE MODE for reduced-power standby
Common data inputs and data outputs
Linear or Interleaved Burst Modes
Burst feature (optional)
Figure 2: 165-Ball FBGA
JEDEC-Standard MS-216 (Var. CAB-1)
•
•
•
•
•
Pin and ball/function compatibility with 2Mb, 4Mb,
and 8Mb ZBT SRAM
TQFP
Options
Marking
•
Timing (Access/Cycle/MHz)
6.±ns/8.8ns/113 MHz
7.±ns/10ns/100 MHz
8.±ns/11ns/90 MHz
Configurations
-8.8
-10
-11
•
Part Number Example:
3.3V VDD, 3.3V or 2.±V I/O
1 Meg x 18
±12K x 32
±12K x 36
2.±V VDD, 2.±V I/O
1 Meg x 18
±12K x 32
±12K x 36
Packages
100-pin TQFP
16±-ball, 13mm x 1±mm FBGA
Operating Temperature Range
MT±±L1MY18F
MT±±L±12Y32F
MT±±L±12Y36F
MT55L512Y36FT-11
General Description
The Micron® Zero Bus Turnaround™ (ZBT®) SRAM
family employs high-speed, low-power CMOS designs
using an advanced CMOS process.
MT±±V1MV18F
MT±±V±12V32F
MT±±V±12V36F
•
•
Micron’s 18Mb ZBT SRAMs integrate a 1 Meg x 18,
±12K x 32, or ±12K x 36 SRAM core with advanced syn-
chronous peripheral circuitry and
counter. These SRAMs are optimized for 100 percent
bus utilization, eliminating any turnaround cycles for
READ to WRITE, or WRITE to READ, transitions. All
synchronous inputs pass through registers controlled
by a positive-edge-triggered single clock input (CLK).
The synchronous inputs include all addresses, all data
inputs, chip enable (CE#), two additional chip enables
T
F1
a 2-bit burst
Commercial (0ºC
?
T
?
+70ºC)
None
IT2
A
Industrial (-40ºC
?
TA
?
+8±ºC)
NOTE:
1. A Part Marking Guide for the FBGA devices can be found on
Micron’s Web site—http://www.micron.com/numberguide.
2. Contact Factory for availability of Industrual Temperature
devices.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
©2003 Micron Technology, Inc.
1
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
for easy depth expansion (CE2, CE2#), cycle start input
(ADV/LD#), synchronous clock enable (CKE#), byte
write enables (BWa#, BWb#, BWc#, and BWd#), and
read/write (R/W#).
cycle one, the address is present on rising edge one.
BYTE WRITEs need to be asserted on the same cycle as
the address. The write data associated with the address
is required one cycle later, or on the rising edge of
clock cycle two.
Address and write control are registered on-chip to
simplify WRITE cycles. This allows self-timed WRITE
cycles. Individual byte enables allow individual bytes
to be written. During a BYTE WRITE cycle, BWa# con-
trols DQa pins/balls; BWb# controls DQb pins/balls;
BWc# controls DQc pins/balls; and BWd# controls
DQd pins/balls. Cycle types can only be defined when
an address is loaded, i.e., when ADV/LD# is LOW. Par-
ity/ECC bits are only available on the x 18 and x36 ver-
sions.
Asynchronous inputs include the output enable
(OE#, which may be tied LOW for control signal mini-
mization), clock (CLK) and snooze enable (ZZ, which
may be tied LOW if unused). There is also a burst mode
pin/ball (MODE) that selects between interleaved and
linear burst modes. MODE may be tied HIGH, LOW or
left unconnected if burst is unused. The data out (Q) is
enabled by OE#. WRITE cycles can be from one to four
bytes wide as controlled by the write control inputs.
All READ, WRITE, and DESELECT cycles are initi-
ated by the ADV/LD# input. Subsequent burst
addresses can be internally generated as controlled by
the burst advance pin/ball (ADV/LD#). Use of burst
mode is optional. It is allowable to give an address for
each individual READ and WRITE cycle. BURST cycles
wrap around after the fourth access from a base
address.
The device is ideally suited for systems requiring
high bandwidth and zero bus turnaround delays.
Please refer to Micron’s Web site (www.micron.com/
sramds) for the latest data sheet.
Dual Voltage I/O
To allow for continuous, 100 percent use of the data
bus, the flow-through ZBT SRAM uses a LATE WRITE
cycle. For example, if a WRITE cycle begins in clock
The 3.3V VDD device is tested for 3.3V and 2.±V I/O
function. The 2.±V VDD device is tested for only 2.±V
I/O function.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
2
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 3: Functional Block Diagram
1 Meg x 18
18
20
20
20
ADDRESS
REGISTER
SA0, SA1, SA
SA1
SA0
SA1'
D1
D0
Q1
Q0
SA0'
MODE
K
BURST
LOGIC
CE
ADV/LD#
K
CLK
CKE#
20
20
WRITE ADDRESS
REGISTER
O
U
T
P
U
T
D
A
T
S
E
N
S
A
ADV/LD#
BWa#
1 Meg x 9 x 2
B
U
F
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
E
S
T
E
E
R
I
18
18
18
18
18
DQs
DQPa
DQPb
18
MEMORY
ARRAY
A
M
P
F
BWb#
R/W#
E
R
S
S
E
N
G
INPUT
REGISTER
18
OE#
CE#
READ LOGIC
CE2
CE2#
Figure 4: Functional Block Diagram
512K x 32/36
17
19
19
19
ADDRESS
REGISTER
SA0, SA1, SA
SA1
SA0
SA1'
SA0'
D1
D0
Q1
Q0
MODE
K
BURST
LOGIC
CE
ADV/LD#
K
CLK
CKE#
19
WRITE ADDRESS
REGISTER
19
O
U
T
P
D
A
T
S
E
N
S
U
T
512K x 8 x 4
(x32)
ADV/LD#
BWa#
BWb#
BWc#
A
B
U
F
WRITE
DRIVERS
E
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
S
T
E
E
R
I
512K x 9 x 4
(x36)
DQs
36
36
36
36
36
36
DQPa
DQPb
DQPc
DQPd
A
M
P
F
E
R
S
MEMORY
ARRAY
BWd#
R/W#
S
E
N
G
36
INPUT
REGISTER
E
OE#
CE#
READ LOGIC
CE2
CE2#
NOTE:
Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball descriptions, and tim-
ing diagrams for detailed information.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
3
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 5: Pin Layout (Top View)
100-Pin TQFP
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
SA
SA
81
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
SA
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
SA
SA
SA
SA
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
SA
SA
SA
4
4
DNU
DNU
V
SS
DD
V
V
DD
SS
V
x18
CE2#
BWa#
BWb#
NC
DNU
DNU
SA0
SA1
SA
NC
CE2
CE#
SA
SA
SA
SA
SA
100
MODE
(LBO#)
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
81
SA
SA
SA
SA
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
SA
SA
SA
SA
SA
SA
SA
DNU
DNU
VDD
VSS
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
ADV/LD#
OE# (G#)
CKE#
R/W#
CLK
4
4
VSS
VDD
x32/x36
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
DNU
DNU
SA0
SA1
SA
SA
CE#
SA
SA
SA
SA
100
MODE
(LBO#)
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
NOTE:
1. No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
2. Pins 14 and 66 do not have to be connected directly to VSS if the input voltage is ?ꢀVIL.
3. Pin 16 does not have to be connected directly to VDD if the input voltage is O VIH.
4. Pins 43 and 42 are reserved for address expansion; 36Mb and 72Mb, respectively.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
4
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 1:
TQFP Pin Descriptions
SYMBOL
TYPE
DESCRIPTION
ADV/LD#
Input
Synchronous Address Advance/Load: When HIGH, this input is used to advance the internal
burst counter, controlling burst access after the external address is loaded. When ADV/LD# is
HIGH, R/W# is ignored. A LOW on ADV/LD# clocks a new address at the CLK rising edge.
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be
written when a WRITE cycle is active and must meet the setup and hold times around the
rising edge of CLK. BWs need to be asserted on the same cycle as the address. BWs are
associated with addresses and apply to subsequent data. BWa# controls DQa pins; BWb#
controls DQb pins; BWc# controls DQc pins; BWd# controls DQd pins.
CE#
Input
Input
Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW).
CE2#
Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW). This input can be used for
memory depth expansion.
CE2
Input
Input
Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW). This input can be used for
memory depth expansion.
CKE#
Synchronous Clock Enable: This active LOW input permits CLK to propagate throughout the
device. When CKE is HIGH, the device ignores the CLK input and effectively internally
extends the previous CLK cycle. This input must meet setup and hold times around the rising
edge of CLK.
CLK
Input
Input
Clock: This signal registers the address, data, chip enables, byte write enables, and burst
control inputs on its rising edge. All synchronous inputs must meet setup and hold times
around the clock’s rising edge.
MODE (LBO#)
Mode: This input selects the burst sequence. A LOW on this pin selects linear burst. NC or
HIGH on this pin selects interleaved burst. Do not alter input state while device is operating.
LBO# is the JEDEC-standard term for MODE.
OE# (G#)
R/W#
Input
Input
Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. G#
is the JEDEC-standard term for OE#.
Read/Write: This input determines the cycle type when ADV/LD# is LOW and is the only
means for determining READs and WRITEs. READ cycles may not be converted into WRITEs
(and vice versa) other than by loading a new address. A LOW on this pin permits BYTE WRITE
operations and must meet the setup and hold times around the rising edge of CLK. Full bus-
width WRITEs occur if all byte write enables are LOW.
SA0
SA1
SA
Input
Input
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold
times around the rising edge of CLK. SA0 and SA1 are the two least significant bits (LSB) of
the address field and set the internal burst counter if burst is desired.
ZZ
Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power
standby mode in which all data in the memory array is retained. When ZZ is active, all other
inputs are ignored. This pin has an internal pull-down and can be left unconnected.
DQa
DQb
DQc
DQd
Input/
Output
SRAM Data I/Os: Byte “a” is associated with DQa pins; byte “b” is associated with DQb pins;
byte “c” is associated with DQc pins; byte “d” is associated with DQd pins. Input data must
meet setup and hold times around the rising edge CLK.
NF/DQPa
NF/DQPb
NF/DQPc
NF/DQPd
NF
I/O
No Function/Parity Data I/Os: On the x32 version, these are No Function (NF). On the x18
version, byte “a” parity is DQPa; byte “b” parity is DQPb. On the x36 version, byte “a” parity
is DQPa; byte “b” parity is DQPb; byte “c” parity is DQPc; byte “d” parity is DQPd.
VDD
Supply
Supply
Power Supply: See DC Electrical Characteristics and Operating Conditions for range.
VDDQ
Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for
range.
VSS
Supply
Ground: GND.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
5
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 1:
TQFP Pin Descriptions (continued)
SYMBOL
TYPE
DESCRIPTION
DNU
–
–
–
Do Not Use: These pins are internally connected to the die. They may be left floating or
connected to ground to improve package heat dissipation.
NC
NF
No Connect: These pins are not internally connected to the die. They may be left floating,
driven by signals, or connected to ground to improve package heat dissipation.
No Function: These pins are internally connected to the die and have the capacitance of an
input pin. They may be left floating, driven by signals, or connected to ground to improve
package heat dissipation.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
6
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 6: Ball Layout (Top View)
165-Ball FBGA
x18
x32/x36
1
2
3
4
5
6
7
8
9
10
11
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
A
B
C
D
E
A
B
C
D
E
A
B
C
D
E
NC
NC
SA
SA
NC
CE# BWb#
NC
CE2# CKE# ADV/LD# SA
SA
SA
NC
NC
NC
NC
NC
NC
SA
NC
NC
NC
SA
SA
NC
CE# BWc# BWb# CE2# CKE# ADV/LD# SA
CE2 BWd# BWa# CLK R/W# OE# (G#) SA
SA
SA
NC
NC
CE2
NC
VSS
BWa# CLK R/W# OE# (G#) SA
1
1
NC NF/DQPb
NC
VDDQ
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NF
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
TDO
TCK
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
NC
DQPa
DQa
DQa
DQa
DQa
ZZ
NF/DQPc
DQc
DQc
DQc
DQc
VSS
VDDQ
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NC
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
NF
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
TDO
TCK
VSS
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
VDDQ
NC
DQb VDDQ
DQb VDDQ
DQb VDDQ
DQb VDDQ
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VDD
VSS
DQc VDDQ
DQc VDDQ
DQc VDDQ
DQc VDDQ
VDDQ DQb DQb
VDDQ DQb DQb
VDDQ DQb DQb
VDDQ DQb DQb
NC
F
F
F
F
NC
G
H
J
G
H
J
G
H
J
G
H
J
NC
VSS
VDD
NC
NC
NC
NC
NC
NC
VDD
NC
NC
NC
ZZ
DQb
DQb
DQb
DQb
DQPb
NC
VDDQ
VDDQ
VDDQ
VDDQ
VDDQ
SA
VDDQ DQa
VDDQ DQa
VDDQ DQa
VDDQ DQa
NC
DQd DQd VDDQ
DQd DQd VDDQ
DQd DQd VDDQ
VDDQ DQa
VDDQ DQa
VDDQ DQa
VDDQ DQa
DQa
DQa
DQa
DQa
K
L
K
L
K
L
K
L
NC
NC
M
N
P
M
N
P
M
N
P
M
N
P
NC
DQd DQd VDDQ
1
1
NC NF/DQPa
VDDQ
SA
NC
SA
SA
NC
NF/DQPd
NC
NC
VDDQ
SA
VDDQ
SA
2
NC
2
NC
SA
TDI
TMS
SA1
SA0
SA
NF
SA
TDI
TMS
SA1
SA0
SA
SA
SA
NF
SA
R
R
R
R
2
2
MODE NC
(LBO#)
SA
SA
SA
SA
SA
MODE NC
(LBO#)
SA
SA
SA
SA
TOP VIEW
TOP VIEW
NOTE:
1. No Function (NF) is used on the x32 version. Parity (DQPx) is used on the x36 version.
2. Balls 2R and 2P are reserved for address expansion; 36Mb and 72Mb, respectively.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
7
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
.
Table 2:
FBGA Ball Descriptions
SYMBOL
TYPE
DESCRIPTION
ADV/LD#
Input
Synchronous Address Advance/Load: When HIGH, this input is used to advance the internal
burst counter, controlling burst access after the external address is loaded. When ADV/LD# is
HIGH, R/W# is ingored. A LOW on ADV/LD# clocks a new address at the CLK rising edge.
BWa#
BWb#
BWc#
BWd#
Input
Synchronous Byte Write Enables: These active LOW inputs allow individual bytes to be
written when a WRITE cycle is active and must meet the setup and hold times around the
rising edge of CLK. BWs need to be asserted on the same cycle as the address. BWs are
associated with addresses and apply to subsequent data. BWa# controls DQa balls; BWb#
controls DQb balls; BWc# controls DQc balls; BWd# controls DQd balls.
CE#
Input
Input
Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW).
CE2#
Synchronous Chip Enable: This active LOW input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW). This input can be used for
memory depth expansion.
CE2
Input
Input
Synchronous Chip Enable: This active HIGH input is used to enable the device and is sampled
only when a new external address is loaded (ADV/LD# LOW). This input can be used for
memory depth expansion.
CKE#
Synchronous Clock Enable: This active LOW input permits CLK to propogate throughout the
device. When CKE# is HIGH, the device ignores the CLK input and effectively internally
extends the previous CLK cycle. This input must meet the setup and hold times around the
rising edge of CLK.
CLK
Input
Input
Clock: This signal registers the address, data, chip enable, byte write enables, and burst
control inputs on its rising edge. All synchronous inputs must meet setup and hold times
around the clock’s rising edge.
MODE (LB0#)
Mode: This input selects the burst sequence. A LOW on this input selects “linear burst.” NC or
HIGH on this input selects “interleaved burst.” Do not alter input state while device is
operating. LBO# is the JEDEC-standard term for MODE.
OE#(G#)
R/W#
Input
Input
Output Enable: This active LOW, asynchronous input enables the data I/O output drivers. G#
is the JEDEC-standard term for OE#.
Read/Write: This input determines the cycle type when ADV/LD# is LOW and is the only
means for determining READs and WRITEs. READ cycles may not be converted into WRITEs
(and vice versa) other than by loading a new address. A LOW on this ball permits BYTE WRITE
operations to meet the setup and hold times around the rising edge of CLK. Full bus-width
WRITEs occur if all byte write enables are LOW.
SA0
SA1
SA
Input
Input
Input
Synchronous Address Inputs: These inputs are registered and must meet the setup and hold
times around the rising edge of CLK. SA0 and SA1 are the two least significant bits (LSB) of
the address field and set the internal burst counter if burst is desired.
TMS
TDI
TCK
IEEE 1149.1 Test Inputs: JEDEC-standard 3.3V and 2.5V I/O levels. These balls may be left not
connected if the JTAG function is not used in the circuit.
ZZ
Snooze Enable: This active HIGH, asynchronous input causes the device to enter a low-power
standby mode in which all data in the memory array is retained. When ZZ is active, all other
inputs are ignored. This ball has an internal pull-down and can be left unconnected.
DQa
DQb
DQc
DQd
Input/
Output
SRAM Data I/Os: For the x18 version, byte “a” is associated with DQa balls; byte “b” is
associated with DQb balls. For the x32 and x36 versions, byte “a” is associated with DQa
balls; byte “b” is associated with DQb balls; byte “c” is associated with DQc balls; byte “d” is
associated with DQd balls. Input data must meet setup and hold times around the rising
edge of CLK.
NF/DQPa
NF/DQPb
NF/DQPc
NF/DQPd
NF
I/O
No Function/Parity Data I/Os: On the x32 version, these are No Function (NF). On the x18
version, byte “a” parity is DQPa; byte “b” parity is DQPb. On the x36 version, byte “a” parity
is DQPa; byte “b” parity is DQPb; byte “c” parity is DQPc; byte “d” parity is DQPd.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
8
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 2:
FBGA Ball Descriptions (continued)
SYMBOL
TYPE
DESCRIPTION
TDO
VDD
Output
Supply
Supply
IEEE 1149.1 Test Output: JEDEC-standard 3.3V and 2.5V I/O levels.
Power Supply: See DC Electrical Characteristics and Operating Conditions for range.
VDDQ
Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for
range.
VSS
NC
Supply
–
Ground: GND.
No Connect: These balls are not internally connected to the die. They may be left floating,
driven by signals, or connected to ground to improve package heat dissipation.
NF
–
No Function: These balls are internally connected to the die and have the capacitance of an
input pin. They may be left floating, driven by signals, or connected to ground to improve
package heat dissipation.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
9
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 3:
Interleaved Burst Address Table (Mode = NC or HIGH)
FIRST ADDRESS
(EXTERNAL)
SECOND ADDRESS
(INTERNAL)
THIRD ADDRESS
(INTERNAL)
FOURTH ADDRESS
(INTERNAL)
X…X00
X…X01
X…X10
X…X11
X…X01
X…X00
X…X11
X…X10
X…X10
X…X11
X…X00
X…X01
X…X11
X…X10
X…X01
X…X00
Table 4:
Linear Burst Address Table (Mode = LOW)
FIRST ADDRESS
(EXTERNAL)
SECOND ADDRESS
(INTERNAL)
THIRD ADDRESS
FOURTH ADDRESS
(INTERNAL)
(INTERNAL)
X…X00
X…X01
X…X10
X…X11
X…X01
X…X10
X…X11
X…X00
X…X10
X…X11
X…X00
X…X01
X…X11
X…X00
X…X01
X…X10
Table 5:
Partial Truth Table for READ/WRITE Commands (x18)
FUNCTION
R/W#
BWa#
BWb#
H
L
L
L
L
X
L
X
H
L
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Byte
WRITE ABORT/NOP
H
L
L
H
H
NOTE:
Using R/W# and byte write(s), any one or more bytes may be written.
Table 6:
Partial Truth Table for READ/WRITE Commands (x32/x36)
FUNCTION
R/W#
BWa#
BWb#
BWc#
BWd#
READ
H
L
L
L
L
L
L
X
L
X
H
L
X
H
H
L
X
H
H
H
L
WRITE Byte “a”
WRITE Byte “b”
WRITE Byte “c”
WRITE Byte “d”
WRITE All Byte
WRITE ABORT/NOP
H
H
H
L
H
H
L
H
L
L
H
H
H
H
NOTE:
Using R/W# and byte write(s), any one or more bytes may be written.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
10
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 7:
State Diagram For ZBT SRAM
DS
BURST
DS
DS
DESELECT
WRITE
READ
BEGIN
READ
BEGIN
WRITE
WRITE
BURST
READ
READ
BURST
BURST
WRITE
BURST
READ
BURST
WRITE
BURST
KEY:
COMMAND OPERATION
DS
DESELECT
READ
WRITE
BURST
New READ
New WRITE
BURST READ,
BURST WRITE, or
CONTINUE DESELECT
NOTE:
1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
clock (CLK) input and does not change the state of the device.
2. States change on the rising edge of the clock (CLK).
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
11
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 7:
Notes: 5–10
Truth Table
ADDRESS
USED
ADV/
OPERATION
CE# CE2# CE2
ZZ
LD# R/W# BWx OE# CKE# CLK
DQ
NOTES
None
None
None
None
H
X
X
X
X
H
X
X
X
X
L
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
LJH High-Z
LJH High-Z
LJH High-Z
LJH High-Z
DESELECT CYCLE
DESELECT Cycle
DESELECT Cycle
L
X
H
1
CONTINUE
DESELECT Cycle
READ Cycle (Begin
Burst)
External
Next
L
X
L
L
X
L
H
X
H
X
H
X
H
X
X
X
L
L
L
L
L
L
L
L
L
H
L
H
L
H
X
H
X
L
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
H
X
LJH
LJH
Q
Q
1, 11
2
READ Cycle
(Continue Burst)
External
Next
H
H
X
X
X
X
X
X
LJH High-Z
NOP/DUMMY READ
(Begin Burst)
DUMMY READ
(Continue Burst)
X
L
X
L
H
L
LJH High-Z 1, 2, 11
External
Next
LJH
LJH
D
D
3
WRITE Cycle (Begin
Burst)
X
L
X
L
H
L
X
L
L
1, 3, 11
2, 3
WRITE Cycle
(Continue Burst)
NOP/WRITE ABORT
(Begin Burst)
None
H
H
X
X
LJH High-Z
Next
X
X
X
X
X
X
H
X
X
X
X
X
LJH High-Z 1, 2, 3,
WRITE ABORT
(Continue Burst)
11
Current
None
LJH
–
4
IGNORE CLOCK
EDGE (Stall)
SNOOZE MODE
X
High-Z
NOTE:
1. CONTINUE BURST cycles, whether READ or WRITE, use the same control inputs. The type of cycle performed (READ
or WRITE) is chosen in the initial BEGIN BURST cycle. A CONTINUE DESELECT cycle can only be entered if a DESELECT
cycle is executed first.
2. DUMMY READ and WRITE ABORT can be considered NOPs because the device performs no external operation. A
WRITE ABORT means a WRITE command is given, but no operation is performed.
3. OE# may be wired LOW to minimize the number of control signals to the SRAM. The device will automatically turn
off the output drivers during a WRITE cycle. OE# may be used when the bus turn-on and turn-off times do not meet
an application’s requirements.
4. If an IGNORE CLOCK EDGE command occurs during a READ operation, the DQ bus will remain active (Low-Z). If it
occurs during a WRITE cycle, the bus will remain in High-Z. No WRITE operations will be performed during the
IGNORE CLOCK EDGE cycle.
5. X means “Don’t Care.” H means logic HIGH. L means logic LOW. BWx = H means all byte write signals (BWa#, BWb#,
BWc#, and BWd#) are HIGH. BWx = L means one or more byte write signals are LOW.
6. BWa# enables WRITEs to byte “a” (DQa pins/balls); BWb# enables WRITEs to byte “b” (DQb pins/balls); BWc#
enables WRITEs to byte “c” (DQc pins/balls); BWd# enables WRITEs to byte “d” (DQd pins/balls).
7. All inputs except OE# and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
8. Wait states are inserted by setting CKE# HIGH.
9. This device contains circuitry that will ensure that the outputs will be in High-Z during power-up.
10. The device incorporates a 2-bit burst counter. Address wraps to the initial address every fourth BURST CYCLE.
11. The address counter is incremented for all CONTINUE BURST CYCLES.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
12
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Stresses greater than those listed may cause perma-
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Absolute Maximum Ratings
3.3V VDD
Voltage on VDD Supply
Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . -0.±V to +4.6V
Voltage on VDDQ Supply
Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . . .-0.±V to VDD
VIN (DQs) . . . . . . . . . . . . . . . . . . . . . -0.±V to VDDQ + 0.±V
VIN (Inputs) . . . . . . . . . . . . . . . . . . . . -0.±V to VDD + 0.±V
Storage Temperature (TQFP) . . . . . . . . .-±±°C to +1±0°C
Storage Temperature (FBGA) . . . . . . . . .-±±°C to +12±°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +1±0°C
Short Circuit Output Current . . . . . . . . . . . . . . . . .100mA
Junction temperature depends upon package type,
cycle time, loading, ambient temperature, and airflow.
2.5V VDD
Voltage on VDD Supply
Relative to VSS . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
Voltage on VDDQ Supply Relative
to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V
VIN (DQs) . . . . . . . . . . . . . . . . . . . . . -0.3V to VDDQ + 0.3V
VIN (Inputs) . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Storage Temperature (TQFP) . . . . . . . . .-±±°C to +1±0°C
Storage Temperature (FBGA)
-±±°C to +12±°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +1±0°C
Short Circuit Output Current . . . . . . . . . . . . . . . . .100mA
Table 8:
3.3V VDD, 3.3V I/0 DC Electrical Characteristics and Operating Conditions
Notes appear following parameter tables on page 18; 0ºC ? TA ? +70ºC; VDD and VDDQ = 3.3V 0.165V unless otherwise
noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
VIH
VIL
ILI
2.0
-0.3
-1.0
-1.0
VDD + 0.3
0.8
V
V
1, 2
1, 2
4
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
0V ? VIN ? VDD
1.0
µA
µA
Output(s) disabled,
ILO
1.0
Output Leakage Current
0V ? VIN ? VDD
IOH = -4.0mA
IOL = 8.0mA
VOH
VOL
2.4
V
V
V
V
1
1
Output High Voltage
Output Low Voltage
Supply Voltage
0.4
3.465
VDD
VDD
3.135
3.135
1
VDDQ
1, 5
Isolated Output Buffer Supply
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
13
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 9:
3.3V VDD, 2.5V I/O DC Electrical Characteristics and Operating Conditions
Notes appear following parameter tables on page 18; 0ºC ? TA ? +70ºC; VDD = 3.3V 0.165V and VDDQ = 2.5V 0.125V unless
otherwise noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
Inputs
VIHQ
VIH
VIL
1.7
1.7
VDDQ + 0.3
VDD + 0.3
0.7
V
V
1, 2
1, 2
1, 2
4
-0.3
-1.0
-1.0
V
Input Low (Logic 0) Voltage
Input Leakage Current
0V ? VIN ? VDD
ILI
1.0
µA
µA
Output(s) disabled,
ILO
1.0
Output Leakage Current
0V ? VIN ? VDDQ (DQX)
IOH = -2.0mA
IOH = -1.0mA
IOL = 2.0mA
IOL = 1.0mA
VOH
VOH
VOL
1.7
2.0
–
–
V
V
V
V
V
V
1
1
Output High Voltage
Output Low Voltage
–
0.7
1
VOL
–
0.4
1
Supply Voltage
VDD
VDDQ
3.135
2.375
3.465
2.625
1
Isolated Output Buffer Supply
1, 5
Table 10: 2.5V VDD, 2.5V I/O DC Electrical Characteristics and Operating Conditions
Notes appear following parameter tables on page 18; 0ºC ? TA ? +70ºC; VDD and VDDQ = 2.5V 0.125V unless otherwise
noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
Input High (Logic 1) Voltage
Data bus (DQx)
Inputs
VIHQ
VIH
VIL
1.7
1.7
VDDQ + 0.3
VDD + 0.3
0.7
V
V
1, 3
1, 3
1, 3
4
-0.3
-1.0
-1.0
V
Input Low (Logic 0) Voltage
Input Leakage Current
0V ? VIN ? VDD
ILI
1.0
µA
µA
Output(s) disabled,
ILO
1.0
Output Leakage Current
0V ? VIN ? VDDQ (DQX)
IOH = -2.0mA
IOH = -1.0mA
IOL = 2.0mA
IOL = 1.0mA
VOH
VOH
VOL
1.7
2.0
–
–
V
V
V
V
V
V
1
1
Output High Voltage
Output Low Voltage
–
0.7
1
VOL
–
0.4
1
Supply Voltage
VDD
VDDQ
2.375
2.375
2.625
2.625
1
Isolated Output Buffer Supply
1, 5
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
14
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 11: TQFP Capacitance
Note 10; notes appear following parameter tables on page 18
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
CI
CO
CA
4.2
3.5
4
5
4
5
5
pF
pF
pF
pF
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
TA = 25°C; f = 1 MHz
VDD = 3.3V
CCK
4.2
Table 12: FBGA Capacitance
Note 10; notes appear following parameter tables on page 18
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
CI
CO
CA
4
4
4
5
5
pF
pF
pF
pF
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
4.5
5
TA = 25°C; f = 1 MHz
VDD = 3.3V
CCK
5.5
Table 13: TQFP Thermal Resistance
Note 10; notes appear following parameter tables on page 18
DESCRIPTION
CONDITIONS
SYMBOL
TYP
28.9
4.2
UNITS
°C/W
Junction to Ambient
(Airflow if 1m/s, two-layer
board)
Test conditions follow standard test methods
and procedures for measuring thermal impedance, per
EIA/JESD51.
ꢁ
JA
ꢁ
Junction to Case (Top)
°C/W
JC
Table 14: FBGA Thermal Resistance
Note 10; notes appear following parameter tables on page 18
DESCRIPTION
CONDITIONS
SYMBOL
TYP
UNITS
Junction to Ambient
(Airflow if 1m/s, two-layer
board)
ꢁ
32
°C/W
JA
Test conditions follow standard test methods
and procedures for measuring thermal impedance, per
EIA/JESD51.
Junction to Case (Top)
ꢁ
1.7
°C/W
°C/W
JC
ꢁ
Junction to Board (Bottom)
10.4
JB
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
15
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 15: 3.3V VDD, IDD Operating Conditions and Maximum Limits
(1 Meg x 18 and 512K x 32/36)
Notes appear following parameter tables on page 18; 0ºC ? TA ? +70ºC; VDD and VDDQ = 3.3V 0.165V or 2.5V 0.125V
unless otherwise noted
MAX
DESCRIPTION
CONDITIONS
SYM
TYP -8.8
-10
-11 UNITS NOTES
Device selected; All inputs ?ꢀVIL
Power Supply
Current: Operating
t
IDD
280
100
8
330
150
30
315
300
130
30
mA
mA
mA
6, 7, 8
6, 7, 8
7, 8
or OꢀVIH; Cycle time Oꢀ KC (MIN);
VDD = MAX; Outputs open
Power Supply
Current: Idle
Device selected; VDD = MAX;
CKE# OꢀVIH; All inputs ?ꢀVSS + 0.2
IDD1
ISB2
140
30
t
or OꢀVDD - 0.2; Cycle time Oꢀ KC (MIN)
Device deselected; VDD = MAX;
All inputs ?ꢀVSS + 0.2 or OꢀVDD - 0.2;
All inputs static; CLK frequency = 0
CMOS Standby
Clock Running
Device deselected; VDD = MAX;
ADV/LD# OꢀVIH; All inputs ?ꢀVSS + 0.2
ISB4
100
8
150
30
140
30
130
30
mA
mA
7, 8
8
t
or OꢀVDD - 0.2; Cycle time Oꢀ KC (MIN)
Snooze Mode
ZZ OꢀVIH
ISB2Z
Table 16: 2.5V VDD, IDD Operating Conditions and Maximum Limits
(1 Meg x 18 and 512K x 32/36)
Notes appear following parameter tables on page 18; 0ºC ? TA ? +70ºC; VDD and VDDQ = 2.5V 0.125V unless otherwise
noted
MAX
DESCRIPTION
CONDITIONS
SYM
TYP -8.8
-10
-11 UNITS NOTES
Device selected; All inputs ?ꢀVIL
Power Supply
Current: Operating
t
IDD
180
80
8
220
120
30
210
200
100
30
mA
mA
mA
6, 7, 9
6, 7, 9
7, 9
or OꢀVIH; Cycle time Oꢀ KC (MIN);
VDD = MAX; Outputs open
Device selected; VDD = MAX;
Power Supply
Current: Idle
CKE# OꢀVIH; All inputs ?ꢀVSS + 0.2
IDD1
ISB2
110
30
t
or OꢀVDD - 0.2; Cycle time Oꢀ KC (MIN)
CMOS Standby
Clock Running
Device deselected; VDD = MAX;
All inputs ?ꢀVSS + 0.2 or OꢀVDD - 0.2;
All inputs static; CLK frequency = 0
Device deselected; VDD = MAX;
ADV/LD# OꢀVIH; All inputs ?ꢀVSS + 0.2 or OꢀVDD
ISB4
80
8
120
30
110
30
100
30
mA
mA
7, 9
9
t
- 0.2; Cycle time Oꢀ KC (MIN)
ZZ OꢀVIH
ISB2Z
Snooze Mode
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
16
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 17: AC Electrical Characteristics and Recommended Operating Conditions
Notes 11–13; notes appear following parameter tables on page 18; 0ºC ? TA ? +70ºC; TJ ?ꢀ95ºC (commercial); TJ ?ꢀ110ºC
(industrial); VDD = 3.3V 0.165V unless otherwise noted
-8.8
MAX
-10
-11
DESCRIPTION
SYMBOL MIN
MIN
MAX
MIN
MAX
UNITS
NOTES
Clock
tKHKH
8.8
fKF
tKHKL
2.5
tKLKH
2.5
10.0
11.0
ns
MHz
ns
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
113
6.5
100
90
2.5
2.5
3.0
3.0
14
14
ns
Output Times
tKHQV
tKHQX
2.5
tKHQX1
2.5
tKHQZ
tGLQV
Clock to output valid
7.5
8.5
ns
ns
ns
ns
ns
ns
ns
3.0
3.0
3.0
3.0
15
Clock to output invalid
Clock to output in Low-Z
Clock to output in High-Z
OE# to output valid
10, 15, 16
10, 15, 16
11
4.0
3.5
5.0
4.0
5.0
5.0
tGLQX
0
tGHQZ
0
0
10, 15, 16
10, 15, 16
OE# to output in Low-Z
OE# to output in High-Z
3.5
4.0
5.0
Setup Times
tAVKH
2.0
tEVKH
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
ns
ns
ns
ns
17
17
17
17
Address
Clock enable (CKE#)
Control signals
Data-in
tCVKH
tDVKH
2.0
2.0
Hold Times
tKHAX
tKHEX
tKHCX
tKHDX
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
ns
ns
ns
ns
17
17
17
17
Address
Clock enable (CKE#)
Control signals
Data-in
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
17
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Notes
9. Typical values are measured at 2.±V, 2±ºC, and
12ns cycle time.
10. This parameter is sampled.
1. All voltages referenced to VSS (GND).
2. For 3.3V VDD:
t
Overshoot: VIH ? +4.6V for t ? KHKH/2 for
I ? 20mA
11. OE# can be considered a “Don’t Care” during
WRITEs; however, controlling OE# can help fine-
tune a system for turnaround timing.
t
Undershoot:VIL O -0.7V for t ? KHKH/2 for
I ? 20mA
12. Test conditions as specified with the output load-
ing shown in Figures 11 and 12 for 3.3V I/O and
Figures 13 and 14 for 2.±V I/O unless otherwise
noted.
13. A WRITE cycle is defined by R/W# LOW, having
been registered into the device at ADV/LD# LOW.
A READ cycle is defined by R/W# HIGH with ADV/
LD# LOW. Both cases must meet setup and hold
times.
14. Measured as HIGH above VIH and LOW below VIL.
1±. Refer to Technical Note TN-±±-01, “Designing
with ZBT SRAMs,” for a more thorough discussion
of these parameters.
16. This parameter is measure with the output load-
ing shown in Figure 12 for 3.3V I/O and Figure 14
for 2.±V I/O.
Power-up: VIH ? +3.6V and VDD ? 3.13±V for
t ? 200ms
3. For 2.±V VDD:
t
Overshoot: VIH ? +3.6V for t ? KHKH/2 for
I ? 20mA
t
Undershoot:VIL O -0.±V for t ? KHKH/2 for
I ? 20mA
Power-up: VIH ? +2.6±V and VDD ? 2.37±V for
t ? 200ms
4. The MODE and ZZ pins/balls have internal pull-
up/pull-down and input leakage = ±10µA.
±. VDDQ should never exceed VDD. VDD and VDDQ
can be externally wired together to the same
power supply.
6. IDD is specified with no output current and
increases with faster cycle times. IDDQ increases
with faster cycle times and greater output loading.
7. “Device deselected” means device is in power-
down mode as defined in the truth table. “Device
selected” means device is active (not in power-
down mode).
17. This is a synchronous device. All addresses must
meet the specified setup and hold times with sta-
ble logic levels for all rising edges of CLK when the
chip is enabled. To remain enabled, chip enable
must be valid at each rising edge of CLK when
ADV/LD# is LOW.
8. Typical values are measured at 3.3V, 2±ºC, and
12ns cycle time.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
18
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 8:
READ/WRITE Timing
1
2
3
4
5
6
7
8
9
10
t
KHKH
t
CLK
t
t
t
t
EVKH KHEX
KLKH
KHKL
CKE#
t
CVKH KHCX
CE#
ADV/LD#
R/W#
BWx#
A1
A2
A4
A3
A5
A6
A7
ADDRESS
DQ
t
KHQV
t
t
AVKH KHAX
t
t
t
t
KHQZ
KHQX
GLQV
KHQX1
D(A1)
t
D(A2)
D(A2+1)
Q(A3)
Q(A4)
Q(A4+1)
D(A5)
Q(A6)
D(A7)
t
GHQZ
t
DVKH KHDX
t
KHQX
t
GLQX
OE#
COMMAND
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
READ
Q(A3)
READ
Q(A4)
BURST
READ
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
D(A2+1)
Q(A4+1)
DON’T CARE
UNDEFINED
NOTE:
1. For these waveforms, ZZ is tied LOW.
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
19
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 9:
NOP, STALL, AND DESELECT Cycles
1
2
3
4
5
6
7
8
9
10
CLK
CKE#
CE#
ADV/LD#
R/W#
BWx#
A1
A2
A3
A4
A5
ADDRESS
t
KHQZ
D(A1)
Q(A2)
Q(A3)
D(A4)
Q(A5)
KHQX
DQ
t
COMMAND
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
DON’T CARE
UNDEFINED
NOTE:
1. The IGNORE CLOCK EDGE or STALL cycle (clock 3) illustrates CKE# being used to create a “pause.” A WRITE is not
performed during this cycle.
2. For these waveforms, ZZ and OE# are tied LOW.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
recent data may be from the input data register.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
20
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
SNOOZE MODE
SNOOZE MODE is a low-current, power-down
mode in which the device is deselected and current is
reduced to ISB2Z. The duration of SNOOZE MODE is
dictated by the length of time the ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become disabled and all outputs go
to High-Z.
The ZZ is an asynchronous, active HIGH input that
causes the device to enter SNOOZE MODE. When the
ZZ becomes a logic HIGH, ISB2Z is guaranteed after the
time tZZI is met. Any READ or WRITE operation pend-
ing when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed. Similarly, when exiting
SNOOZE MODE during tRZZ, only a DESELECT or
READ cycle should be given.
Table 18: SNOOZE MODE Electrical Characteristics
DESCRIPTION
CONDITIONS
SYMBOL
ISB2Z
tZZ
tRZZ
tZZI
tRZZI
MIN
MAX
30
tKHKH
UNITS
NOTES
Current during SNOOZE MODE
ZZ active to input ignored
ZZ O VIH
mA
ns
1
1
1
1
tKHKH
0
ns
ns
ns
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
tKHKH
NOTE:
1. This parameter is sampled.
Figure 10:
SNOOZE MODE Waveform
CLK
t
ZZ
t
RZZ
ZZ
t
ZZI
I
SUPPLY
I
ISB2Z
t
RZZI
ALL INPUTS
(except ZZ)
DESELECT or READ Only
Outputs (Q)
High-Z
DON’T CARE
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
21
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
3.3V VDD, 3.3V I/O AC Test Conditions
Input pulse levels ....................... VIH = (VDD/2.2) + 1.±V
..........................VIL = (VDD/2.2) - 1.±V
2.5V VDD, 2.5V I/O AC Test Conditions
Input pulse levels..........................VIH = (VDD/2) + 1.2±V
........................... VIL = (VDD/2) - 1.2±V
Input rise and fall times ..............................................1ns
Input timing reference levels..............................VDD/2.2
Output reference levels....................................VDDQ/2.2
Output load................................... See Figures 11 and 12
Input rise and fall times ............................................. 1ns
Input timing reference levels.................................VDD/2
Output reference levels.......................................VDDQ/2
Output load................................... See Figures 13 and 14
3.3V VDD, 2.5V I/O AC Test Conditions
Input pulse levels ....................VIH = (VDD/2.64) + 1.2±V
...................... VIL = (VDD/2.64) - 1.2±V
Input rise and fall times ..............................................1ns
Input timing reference levels............................VDD/2.64
Output reference levels.......................................VDDQ/2
Output load................................... See Figures 13 and 14
3.3V I/O Output Load Equivalents
Figure 11:
2.5V I/O Output Load Equivalents
Figure 13:
VT = VDDQ/2
VT = VDDQ/2.2
50Ω
50Ω
Q
Q
ZO= 50Ω
30pF
ZO= 50Ω
30pF
Figure 14:
Figure 12:
+2.5V
+3.3V
225Ω
5pF
317
5pF
Q
Q
351
225Ω
NOTE:
For Figures 11 and 13, 30pF = distributive test jig capacitance.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
22
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
IEEE 1149.1 Serial Boundary Scan
(JTAG)
Test Access Port (Tap)
Test Clock (TCK)
The test clock is used only with the TAP controller.
All inputs are captured on the rising edge of TCK. All
outputs are driven from the falling edge of TCK.
The SRAM incorporates a serial boundary scan test
access port (TAP). This port operates in accordance
with IEEE Standard 1149.1-1990 but does not have the
set of functions required for full 1149.1 compliance.
These functions from the IEEE specification are
excluded because their inclusion places an added
delay in the critical speed path of the SRAM. Note that
the TAP controller functions in a manner that does not
conflict with the operation of other devices using
1149.1 fully compliant TAPs. The TAP operates using
JEDEC-standard 3.3V or 2.±V I/O logic levels.
The SRAM contains a TAP controller, instruction
register, boundary scan register, bypass register, and
ID register.
Test MODE SELECT (TMS)
The TMS input is used to give commands to the TAP
controller and is sampled on the rising edge of TCK. It
is allowable to leave this ball unconnected if the TAP is
not used. The ball is pulled up internally, resulting in a
logic HIGH level.
Test Data-In (TDI)
The TDI ball is used to serially input information
into the registers and can be connected to the input of
any of the registers. The register between TDI and TDO
is chosen by the instruction that is loaded into the TAP
instruction register. For information on loading the
instruction register, see Figure 1±. TDI is internally
pulled up and can be unconnected if the TAP is unused
in an application. TDI is connected to the most signifi-
cant bit (MSB) of any register. (See Figure 16.)
Disabling the JTAG Feature
These balls can be left floating (unconnected), if the
JTAG function is not to be implemented. Upon pow-
erup, the device will come up in a reset state which will
not interfere with the operation of the device.
Figure 15:
TAP Controller State Diagram
Test Data-Out (TDO)
The TDO output ball is used to serially clock data-
out from the registers. The output is active depending
upon the current state of the TAP state machine. (See
Figure 1±.) The output changes on the falling edge of
TCK. TDO is connected to the least significant bit
(LSB) of any register. (See Figure 16.)
TEST-LOGIC
1
RESET
0
1
1
1
RUN-TEST/
IDLE
SELECT
DR-SCAN
SELECT
IR-SCAN
0
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
Figure 16:
SHIFT-DR
0
SHIFT-IR
0
TAP Controller Block Diagram
1
1
1
1
EXIT1-DR
EXIT1-IR
0
0
0
Bypass Register
PAUSE-DR
1
0
PAUSE-IR
1
0
2
1 0
Selection
Circuitry
Selection
Circuitry
Instruction Register
31 30 29
Identification Register
0
0
TDI
TDO
EXIT2-DR
1
EXIT2-IR
1
.
.
. 2 1 0
UPDATE-DR
UPDATE-IR
x
.
.
.
.
. 2 1 0
1
0
1
0
Boundary Scan Register*
TCK
TMS
NOTE:
TAP CONTROLLER
The 0/1 next to each state represents the value
of TMS at the rising edge of TCK.
NOTE:
X = 74 for all configurations.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
23
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
one of the balls on the SRAM package. The MSB of the
register is connected to TDI, and the LSB is connected
to TDO.
Performing a TAP Reset
A RESET is performed by forcing TMS HIGH (VDD)
for five rising edges of TCK. This RESET does not affect
the operation of the SRAM and may be performed
while the SRAM is operating.
Identification (ID) Register
At power-up, the TAP is reset internally to ensure
that TDO comes up in a High-Z state.
The ID register is loaded with a vendor-specific, 32-
bit code during the Capture-DR state when the
IDCODE command is loaded in the instruction regis-
ter. The IDCODE is hardwired into the SRAM and can
be shifted out when the TAP controller is in the Shift-
DR state. The ID register has a vendor code and other
information described in the Identification Register
Definitions table.
TAP Registers
Registers are connected between the TDI and TDO
balls and allow data to be scanned into and out of the
SRAM test circuitry. Only one register can be selected
at a time through the instruction register. Data is seri-
ally loaded into the TDI ball on the rising edge of TCK.
Data is output on the TDO ball on the falling edge of
TCK.
TAP Instruction Set
Overview
Eight different instructions are possible with the
three-bit instruction register. All combinations are
listed in the Instruction Codes table. Three of these
instructions are listed as RESERVED and should not be
used. The other five instructions are described in detail
below.
The TAP controller used in this SRAM is not fully
compliant to the 1149.1 convention because some of
the mandatory 1149.1 instructions are not fully imple-
mented. The TAP controller cannot be used to load
address, data or control signals into the SRAM and
cannot preload the I/O buffers. The SRAM does not
implement the 1149.1 commands EXTEST or INTEST
or the PRELOAD portion of SAMPLE/PRELOAD;
rather, it performs a capture of the I/O ring when these
instructions are executed.
Instructions are loaded into the TAP controller dur-
ing the Shift-IR state when the instruction register is
placed between TDI and TDO. During this state,
instructions are shifted through the instruction regis-
ter through the TDI and TDO balls. To execute the
instruction once it is shifted in, the TAP controller
needs to be moved into the Update-IR state.
Instruction Register
Three-bit instructions can be serially loaded into
the instruction register. This register is loaded when it
is placed between the TDI and TDO balls as shown in
Figure 16. Upon power-up, the instruction register is
loaded with the IDCODE instruction. It is also loaded
with the IDCODE instruction if the controller is placed
in a reset state as described in the previous section.
When the TAP controller is in the Capture-IR state,
the two LSBs are loaded with a binary “01” pattern to
allow for fault isolation of the board-level serial test
data path.
Bypass Register
To save time when serially shifting data through reg-
isters, it is sometimes advantageous to skip certain
chips. The bypass register is a single-bit register that
can be placed between the TDI and TDO balls. This
allows data to be shifted through the SRAM with mini-
mal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the
input and bidirectional balls on the SRAM. The SRAM
has a 7±-bit-long register.
The boundary scan register is loaded with the con-
tents of the RAM I/O ring when the TAP controller is in
the Capture-DR state and is then placed between the
TDI and TDO balls when the controller is moved to the
Shift-DR state. The EXTEST, SAMPLE/PRELOAD and
SAMPLE Z instructions can be used to capture the
contents of the I/O ring.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is
to be executed whenever the instruction register is
loaded with all 0s. EXTEST is not implemented in this
SRAM TAP controller, and therefore this device is not
compliant to 1149.1.
The TAP controller does recognize an all-0 instruc-
tion. When an EXTEST instruction is loaded into the
instruction register, the SRAM responds as if a SAM-
PLE/PRELOAD instruction has been loaded. There is
one difference between the two instructions. Unlike
The Boundary Scan Order tables show the order in
which the bits are connected. Each bit corresponds to
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
24
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
the SAMPLE/PRELOAD instruction, EXTEST places
the SRAM outputs in a High-Z state.
transition. The TAP may then try to capture a signal
while in transition (metastable state). This will not
harm the device, but there is no guarantee as to the
value that will be captured. Repeatable results may not
be possible.
IDCODE
The IDCODE instruction causes a vendor-specific,
32-bit code to be loaded into the instruction register. It
also places the instruction register between the TDI
and TDO balls and allows the IDCODE to be shifted
out of the device when the TAP controller enters the
Shift-DR state. The IDCODE instruction is loaded into
the instruction register upon power-up or whenever
the TAP controller is given a test logic reset state.
To guarantee that the boundary scan register will
capture the correct value of a signal, the SRAM signal
must be stabilized long enough to meet the TAP con-
t
troller’s capture setup plus hold time (tCS plus CH).
The SRAM clock input might not be captured correctly
if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an
issue, it is still possible to capture all other signals and
simply ignore the value of the CLK captured in the
boundary scan register.
Once the data is captured, it is possible to shift out
the data by putting the TAP into the Shift-DR state.
This places the boundary scan register between the
TDI and TDO balls.
Note that since the PRELOAD part of the command
is not implemented, putting the TAP to the Update-DR
state while performing a SAMPLE/PRELOAD instruc-
tion will have the same effect as the Pause-DR com-
mand.
SAMPLE Z
The SAMPLE Z instruction causes the boundary
scan register to be connected between the TDI and
TDO balls when the TAP controller is in a Shift-DR
state. It also places all SRAM outputs into a High-Z
state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruc-
tion. The PRELOAD portion of this instruction is not
implemented, so the device TAP controller is not fully
1149.1-compliant.
BYPASS
When the SAMPLE/PRELOAD instruction is loaded
into the instruction register and the TAP controller is in
the Capture-DR state, a snapshot of data on the inputs
and bidirectional balls is captured in the boundary
scan register.
The user must be aware that the TAP controller
clock can only operate at a frequency up to 10 MHz,
while the SRAM clock operates more than an order of
magnitude faster. Because there is a large difference in
the clock frequencies, it is possible that during the
Capture-DR state, an input or output will undergo a
When the BYPASS instruction is loaded in the
instruction register and the TAP is placed in a Shift-DR
state, the bypass register is placed between the TDI
and TDO balls. The advantage of the BYPASS instruc-
tion is that it shortens the boundary scan path when
multiple devices are connected together on a board.
Reserved
These instructions are not implemented but are
reserved for future use. Do not use these instructions.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
25
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 17:
TAP Timing
1
2
3
4
5
6
Test Clock
(TCK)
t
t
t
t
THTH
THTL
TLTH
t
t
MVTH
DVTH
THMX
Test Mode Select
(TMS)
t
THDX
Test Data-In
(TDI)
t
TLOV
t
TLOX
Test Data-Out
(TDO)
DON’T CARE
UNDEFINED
Table 19: TAP AC Electrical Characteristics
Notes 1, 2; 0ºC ? TA ? +70ºC; VDD = 3.3V 0.165V or 2.5V 0.125V
DESCRIPTION
SYMBOL
MIN
MAX
UNITS
Clock
tTHTH
fTF
tTHTL
tTLTH
100
ns
MHz
ns
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
10
40
40
ns
Output Times
tTLOX
tTLOV
tDVTH
tTHDX
TCK LOW to TDO unknown
0
ns
ns
ns
ns
20
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
10
10
Setup Times
tMVTH
tCS
10
10
ns
ns
TMS setup
Capture setup
Hold Times
tTHMX
tCH
TMS hold
10
10
ns
ns
Capture hold
NOTE:
t
1. CS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the loads in Figures 18 and 19.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
26
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
3.3V TAP AC Test Conditions
2.5V TAP AC Test Conditions
Input Pulse Levels........................................... Vss to 2.±V
Input rise and fall times ............................................. 1ns
Input timing reference levels.................................. 1.2±V
Output reference levels........................................... 1.2±V
Test load termination supply voltage .................... 1.2±V
Input Pulse Levels .......................................... Vss to 3.0V
Input rise and fall times ..............................................1ns
Input timing reference levels.................................... 1.±V
Output reference levels............................................. 1.±V
Test load termination supply voltage ...................... 1.±V
Figure 19:
2.5V TAP AC Output Load Equivalent
Figure 18:
3.3V TAP AC Output Load Equivalent
1.25V
1.5V
50Ω
50Ω
TDO
TDO
ZO= 50Ω
ZO= 50Ω
20pF
20pF
Table 20: 3.3V VDD, TAP DC Electrical Characteristics and Operating Conditions
0ºC ? TA ? +70ºC; VDD = 3.3V 0.165V unless otherwise noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
VIH
VIL
ILI
2.0
-0.3
-10
-10
VDD + 0.3
V
V
1, 2
1, 2
2
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
0.8
10
10
0V ? VIN ? VDD
µA
µA
Output Leakage Current
Output(s) disabled,
ILO
2
0V ? VIN ? VDD (TDO)
Output Low Voltage
Output High Voltage
IOLC = 100µA
IOLT = 2mA
VOL1
VOL2
VOH1
VOH2
0.7
0.8
V
V
V
V
1, 2
1, 2
1, 2
1, 2
IOHC = -100µA
IOHT = -2mA
2.9
2.0
Table 21: 2.5V VDD, TAP DC Electrical Characteristics and Operating Conditions
0ºC ? TA ? +70ºC;ꢀVDD = 2.5V 0.125V unless otherwise noted
DESCRIPTION
CONDITIONS
SYMBOL
MIN
MAX
UNITS
NOTES
VIH
VIL
ILI
1.7
-0.3
-10
-10
VDD + 0.3
V
V
1, 2
1, 2
2
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
0.7
10
10
0V ? VIN ? VDD
µA
µA
Output(s) disabled,
ILO
2
Output Leakage Current
0V ? VIN ? VDD (TDO)
IOLC = 100µA
IOLT = 2mA
VOL1
VOL2
VOH1
VOH2
0.2
0.7
V
V
V
V
1, 2
1, 2
1, 2
1, 2
Output Low Voltage
Output High Voltage
IOHC = -100µA
IOHT = -2mA
2.1
1.7
NOTE:
1. All voltages referenced to VSS (GND).
2. TAP control balls only. For boundary scan ball specifications, please refer to the I/O DC Electrical Characteristics and
Operation Conditions tables.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
27
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 22: Identification Register Definitions
INSTRUCTION FIELD
BIT CONFIGURATION
DESCRIPTION
Revision Number
(31:28)
0000
Reserved for version number.
00111
00110
Device Depth
(27:23)
Defines depth of 1Mb.
Defines depth of 512K.
00011
00100
Device Width
(22:18)
Defines width of x18 bits.
Defines width of x32 or x 36 bits.
Micron Device ID
(17:12)
xxxxxx
00000101100
1
Reserved for future use.
Micron JEDEC ID Code
(11:1)
Allows unique identification of SRAM vendor.
Indicates the presence of an ID register.
ID Register Presence
Indicator (0)
Table 23: Scan Register Sizes
REGISTER NAME
BIT SIZE
Instruction
3
1
Bypass
ID
32
75
Boundary Scan: x18, x32, x36
Table 24: Instruction Codes
INSTRUCTION
CODE
DESCRIPTION
EXTEST
000
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant.
001
010
IDCODE
Loads the ID register with the vendor ID code and places the register between TDI and
TDO. This operation does not affect SRAM operations.
SAMPLE Z
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Forces all SRAM output drivers to a High-Z state.
RESERVED
011
100
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
Captures I/O ring contents. Places the boundary scan register between TDI and TDO.
Does not affect SRAM operation. This instruction does not implement 1149.1 preload
function and is therefore not 1149.1-compliant.
101
110
111
RESERVED
RESERVED
BYPASS
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
28
©2003 Micron Technology, Inc.
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 25: 165-Ball FBGA Boundary Scan Order (x18)
BIT#
SIGNAL NAME
BALL ID
BIT#
SIGNAL NAME
BALL ID
1
MODE (LBO#)
NF
1R
6N
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
CLK
NC
6B
11B
1A
6A
5B
5A
4A
4B
3B
3A
2A
2B
1B
1C
1D
1E
1F
2
3
NF
11P
8R
NC
4
SA
CE2#
BWa#
NC
5
SA
8P
6
SA
9R
7
SA
9P
BWb#
NC
8
SA
10R
10P
11R
11H
11N
11M
11L
11K
11J
10M
10L
10K
10J
11G
11F
11E
11D
11C
10F
10E
10D
10G
11A
10B
10A
9A
9
SA
CE2
CE#
SA
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SA
ZZ
NC
SA
NC
NC
NC
NC
NC
NC
NC
NC
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQPa
NC
NC
NC
1G
2D
2E
2F
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQPb
NC
2G
1J
1K
1L
1M
1N
2K
2L
NC
NC
NC
NC
SA
NC
2M
2J
SA
NC
SA
SA
3P
3R
4P
4R
6P
6R
SA
SA
SA
9B
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
8A
SA
8B
SA1
SA0
7A
7B
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
29
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 26: 165-Ball FBGA Boundary Scan Order (x32)
BIT#
SIGNAL NAME
BALL ID
BIT#
SIGNAL NAME
BALL ID
1
MODE (LB0#)
NF
1R
6N
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
CLK
NC
6B
11B
1A
6A
5B
5A
4A
4B
3B
3A
2A
2B
1B
1C
1D
1E
1F
2
3
NF
11P
8R
NC
4
SA
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
CE#
SA
5
SA
8P
6
SA
9R
7
SA
9P
8
SA
10R
10P
11R
11H
11N
11M
11L
11K
11J
10M
10L
10K
10J
11G
11F
11E
11D
10G
10F
10E
10D
11C
11A
10B
10A
9A
9
SA
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SA
ZZ
NF
SA
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
NF
NC
NF
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
DQd
DQd
DQd
DQd
NF
1G
2D
2E
2F
2G
1J
1K
1L
1M
2J
2K
2L
NC
2M
1N
3P
3R
4P
4R
6P
6R
SA
SA
SA
SA
SA
SA
9B
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
8A
SA
8B
SA1
SA0
7A
7B
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
30
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Table 27: 165-Ball FBGA Boundary Scan Order (x36)
BIT#
SIGNAL NAME
BALL ID
BIT#
SIGNAL NAME
BALL ID
1
MODE (LB0#)
NF
1R
6N
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
CLK
NC
6B
11B
1A
6A
5B
5A
4A
4B
3B
3A
2A
2B
1B
1C
1D
1E
1F
2
3
NF
11P
8R
NC
4
SA
CE2#
BWa#
BWb#
BWc#
BWd#
CE2
5
SA
8P
6
SA
9R
7
SA
9P
8
SA
10R
10P
11R
11H
11N
11M
11L
11K
11J
10M
10L
10K
10J
11G
11F
11E
11D
10G
10F
10E
10D
11C
11A
10B
10A
9A
9
SA
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
SA
CE#
ZZ
SA
DQPa
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQa
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQb
DQPb
NC
SA
NC
DQPc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQc
DQd
DQd
DQd
DQd
DQd
DQd
DQd
DQd
DQPd
SA
1G
2D
2E
2F
2G
1J
1K
1L
1M
2J
2K
2L
2M
1N
3P
3R
4P
4R
6P
6R
SA
SA
SA
SA
SA
9B
SA
ADV/LD#
OE# (G#)
CKE#
R/W#
8A
SA
8B
SA1
SA0
7A
7B
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
31
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 20: 100-Pin Plastic TQFP
(JEDEC LQFP)
+0.10
-0.20
22.10
20.10 0.10
0.65 TYP
0.32
+0.06
-0.10
0.625
SEE DETAIL A
14.00 0.10
16.00 0.20
PIN #1 ID
+0.03
0.15
1.40 0.05
-0.02
GAGE PLANE
0.60 0.15
1.60 MAX
0.10
+0.10
-0.05
0.10
1.00 TYP
0.25
DETAIL A
NOTE:
1. All dimensions in inches (millimeters) ------------- or typical where noted.
MAX
MIN
2. Package width and length do not include mold protrusion; allowable mold protrusion is 0.25mm per side.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
32
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Figure 21:
165-Ball FBGA
0.85 0.075
0.12
C
SEATING PLANE
C
BALL A11
165X Ø 0.45
10.00
SOLDER BALL DIAMETER REFERS
TO POST REFLOW CONDITION. THE
PRE-REFLOW DIAMETER IS Ø 0.40
BALL A1
PIN A1 ID
1.20 MAX
1.00
TYP
PIN A1 ID
7.50 0.05
14.00
15.00 0.10
7.00 0.05
1.00
TYP
MOLD COMPOUND: EPOXY NOVOLAC
SUBSTRATE: PLASTIC LAMINATE
6.50 0.05
5.00 0.05
13.00 0.10
SOLDER BALL MATERIAL: EUTECTIC 62% Sn, 36% Pb, 2% Ag
SOLDER BALL PAD: Ø .33mm
NOTE:
MAX
1. All dimensions in inches (millimeters) ------------- or typical where noted.
MIN
Data Sheet Designation
No Marking: This data sheet contains minimum and maximum limits specified over the complete power
supply and temperature range for production devices. Although considered final, these specifications are sub-
ject to change, as further product development and data characterization sometimes occur.
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks and/or service marks of Micron Technology, Inc.
ZBT and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc., and the architecture is supported by Micron Technology, Inc.,
and Motorola, Inc.
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
33
18Mb: 1 MEG x 18, 512K x 32/36
FLOW-THROUGH ZBT SRAM
Document Revision History
•
Rev D; Pub. 2/03..........................................................................................................................................................2/03
Changed designation from Preliminary to Production
•
Rev C; Pub. 12/02 ......................................................................................................................................................12/02
Added TJ specifications to the AC Electrical Characteristics table
Corrected Boundary Scan
Updated TQFP and FBGA Thermal Resistance values
Corrected grammatical errors
•
•
Rev B; PRELIMINARY ...............................................................................................................................................11/02
Changed designation from ADVANCE to PRELIMINARY
Corrected grammatical errors
New ADVANCE data sheet for 0.16µm process; Rev A; Pub. 6/02...........................................................................6/02
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
34
相关型号:
©2020 ICPDF网 联系我们和版权申明