BTA1576S3 [CYSTEKEC]

General Purpose PNP Epitaxial Planar Transistor; 通用PNP外延平面晶体管


型号：	BTA1576S3
厂家：	CYSTECH ELECTONICS CORP.
描述：	General Purpose PNP Epitaxial Planar Transistor 通用PNP外延平面晶体管晶体晶体管
文件：	总4页 (文件大小：135K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C306S3

Issued Date : 2002.05.11

Revised Date : 2002.11.26

Page No. : 1/4

CYStech Electronics Corp.

General Purpose PNP Epitaxial Planar Transistor

BTA1576S3

Description

• The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose

amplification.

• Excellent hFE linearity

• Complementary to BTC4081S3.

Symbol

Outline

BTA1576S3

SOT-323

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VCBO

VCEO

VEBO

-60

-50

-6

-150

225

°C

Power Dissipation

Junction Temperature

Storage Temperature

Tstg

150

-55~+150

BTA1576S3

CYStek Product Specification

Spec. No. : C306S3

Issued Date : 2002.05.11

Revised Date : 2002.11.26

Page No. : 2/4

CYStech Electronics Corp.

Characteristics

(Ta=25°C)

Symbol

Min. Typ.

Max.

Unit

Test Conditions

BVCBO

-60

-50

-6

IC=-50uA

IC=-1mA

IE=-50uA

VCB=-60V

VEB=-6V

BVCEO

BVEBO

ICBO

-0.1

-0.5

820

IEBO

*VCE(sat)

*hFE

-0.2

IC=-50mA, IB=-5mA

120

VCE=-6V, IC=-1mA

140

4.0

MHz

VCE=-12V, IC=-2mA, f=30MHz

Cob

5.0

VCB=-12V, f=1MHz

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

Range

120-270

180-390

270-560

410-820

BTA1576S3

CYStek Product Specification

Spec. No. : C306S3

Issued Date : 2002.05.11

Revised Date : 2002.11.26

Page No. : 3/4

CYStech Electronics Corp.

Characteristic Curves

Current Gain vs Collector Current

Saturation Voltage vs Collector Current

1000

100

HFE@VCE=6V

VCE(SAT)@IC=10IB

100

0.1

100

1000

0.1

100

1000

Collector Current---IC(mA)

Saturation Voltage vs Collector Current

Cutoff Frequency vs Collector Current

1000

VBE(SAT)@IC=10IB

FT@VCE=12V

100

0.1

100

1000

100

Collector Current---IC(mA)

Power Derating Curve

250

200

150

100

150

200

Ambient Temperature --- Ta(℃ )

BTA1576S3

CYStek Product Specification

Spec. No. : C306S3

Issued Date : 2002.05.11

Revised Date : 2002.11.26

Page No. : 4/4

CYStech Electronics Corp.

SOT-323 Dimension

Marking:

detail Z

3-Lead SOT-323 Plastic

Surface Mounted Package

CYStek Package Code: S3

Style: Pin 1.Base 2.Emitter 3.Collector

scale

*: Typical

Inches

Min. Max.

Millimeters

Inches

Millimeters

DIM

Min.

0.80

0.00

0.30

0.10

1.80

1.15

1.3

Max.

1.10

0.10

0.40

0.25

2.20

1.35

Min.

0.0256

Max.

Min.

0.65

2.00

0.15

0.13

0.2

Max.

0.0315 0.0433

0.0000 0.0039

0.0118 0.0157

0.0039 0.0098

0.0709 0.0866

0.0453 0.0531

0.0787 0.0886

0.0059 0.0177

0.0051 0.0091

2.25

0.45

0.23

0.0079

0.2

10°

0°

0.0512

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: 42 Alloy ; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTA1576S3

CYStek Product Specification

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