BTA1727J3 [CYSTEKEC]

High Voltage PNP Epitaxial Planar Transistor;


型号：	BTA1727J3
厂家：	CYSTECH ELECTONICS CORP.
描述：	High Voltage PNP Epitaxial Planar Transistor
文件：	总7页 (文件大小：433K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 1/7

High Voltage PNP Epitaxial Planar Transistor

BTA1727J3

Description

 High breakdown voltage. (BV_CEO=-400V)

 Low saturation voltage

 Wide SOA (safe operation area).

 Pb-free lead plating and halogen-free package

Symbol

Outline

TO-252(DPAK)

BTA1727J3

B：Base

B C E

C：Collector

E：Emitter

Ordering Information

Device

Package

TO-252

(RoHS compliant package)

Shipping

2500 pcs / Tape & Reel

BTA1727J3-0-T3-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3:2500 pcs/tape & reel, 13” reel

Product rank, zero for no rank products

Product name

BTP1727J3

CYStek Product Specification

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 2/7

Absolute Maximum Ratings (Ta=25C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation @ TA=25°C

Power Dissipation @ TC=25°C

Operating Junction Temperature Range

Storage Temperature Range

Symbol

Limits

Unit

VCBO

VCEO

VEBO

-400

-7

-500

-1

ICP

Tstg

-55~+150

C

Thermal Data

Parameter

Thermal Resistance, Junction-to-ambient, max

Thermal Resistance, Junction-to-case, max

Symbol

RθJA

RθJC

Value

125

12.5

Unit

C/W

Characteristics

(Ta=25C)

Symbol

BV_CBO

Min.

-400

-7

Typ.

Max.

Unit

Test Conditions

I_C=-100μA

BV_CEO

BV_EBO

I_CBO

I_C=-1mA

I_E=-10μA

V_CB=-400V

V_EB=-6V

-100

-200

-500

-1

-1.2

320

I_EBO

V_CE(sat)

*V_CE(sat)

I_C=-20mA, I_B=-2mA

I_C=-50mA, I_B=-5mA

I_C=-100mA, I_B=-10mA

V_CE=-5V, I_C=-50mA

V_CE=-10V, I_C=-100mA

V_CE=-10V, I_C=-10mA

V_CB=-10V, I_E=0A,f=1MHz

*V_BE(sat)

*h_FE

f_T

140

MHz

Cob

*Pulse Test: Pulse Width 380μs, Duty Cycle2%

BTP1727J3

CYStek Product Specification

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 3/7

Typical Characteristics

Current Gain vs Collector Current

Saturation Voltage vs Collector Current

1000

10000

1000

100

VCESAT

VCE=10V

IC=30IB

100

VCE=5V

IC=10IB

IC=20IB

100

1000

100

Collector Current ---IC(mA)

Transition Frequency vs Collector Current

Saturation Voltage vs Collector Current

100

10000

VCE=10V

VBESAT@IC=10IB

1000

100

1000

100

Collector Current--- IC(mA)

Capacitance Characteristics

Power Derating Curve

1000

100

1.2

0.8

0.6

0.4

0.2

Cib

Cob

f=1MHz

100

150

Ambient Temperature---TA(℃)

200

0.1

Reverse-biased Voltage---(V)

100

BTP1727J3

CYStek Product Specification

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 4/7

Power Derating Curve

100

150

200

CaseTemperature---TC(℃)

Recommended soldering footprint

BTP1727J3

CYStek Product Specification

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 5/7

Reel Dimension

Carrier Tape Dimension

BTP1727J3

CYStek Product Specification

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 6/7

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 C

260 +0/-5 C

Time within 5C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6C/second max.

6 minutes max.

8 minutes max.

Time 25 C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

BTP1727J3

CYStek Product Specification

Spec. No. : C236J3

Issued Date : 2018.05.29

Revised Date :

CYStech Electronics Corp.

Page No. : 7/7

TO-252 Dimension

Marking:

Device

Code

A1727

HFE

rank

□ □□

Date

Code

3-Lead TO-252 Plastic Surface Mount Package

CYStek Package Code: J3

Style: Pin 1.Base 2.Collector 3.Emitter

4.Collector

Inches

Min.

Millimeters

Inches

Millimeters

DIM

Max.

0.094

0.005

0.048

0.034

0.023

0.264

0.215

0.244

Min.

Max.

2.400

0.127

1.210

0.860

0.580

6.700

5.460

6.200

Min.

0.086

0.172

Max.

0.094

0.188

Min.

2.186

4.372

Max.

2.386

4.772

0.087

0.000

0.039

0.026

0.018

0.256

0.201

0.236

2.200

0.000

0.990

0.660

0.460

6.500

5.100

6.000

0.163 REF

0.190 REF

0.386 0.409

0.114 REF

4.140 REF

4.830 REF

9.800 10.400

2.900 REF

0.055

0.024

0.067

0.039

1.400

0.600

1.700

1.000

0.026 REF

0.211 REF

0.650 REF

5.350 REF

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

 Lead : Pure tin plated.

 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

 CYStek reserves the right to make changes to its products without notice.

 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTP1727J3

CYStek Product Specification

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