BTA1727L3 [CYSTEKEC]
High Voltage PNP Epitaxial Planar Transistor; 高电压PNP外延平面晶体管型号: | BTA1727L3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | High Voltage PNP Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 1/4
CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTA1727L3
Features
• High breakdown voltage, BVCEO=-400V
• Low saturation voltage
• High switching speed.
• Complementary to BTD2568L3
• Pb-free package
Symbol
Outline
BTA1727L3
SOT-223
C
E
C
B:Base
C:Collector
E:Emitter
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
VCBO
VCEO
VEBO
IC
-400
-400
-6
V
V
V
-300
-1
mA
A
mA
ICP
IB
Pd
-100
5
Power Dissipation @TC=25℃
W
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
°C
°C
BTA1727L3
CYStek Product Specification
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 2/4
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-10µA, IC=0
VCB=-400V, IE=0
VEB=-4V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
VCE=-5V, IC=-50mA, f =100MHz
VCB=-20V, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
-400
-
-
V
-400
-
-
V
-6
-
-
-
V
-
-100
-100
-0.3
-0.5
-0.8
-0.95
-0.95
-
nA
nA
V
IEBO
-
-
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
1
-
-
2
1
2
-
-
V
-
-
V
-
-
V
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
-
-
V
50
90
90
40
-
-
-
-
260
260
-
-
-
-
-
-
-
-
90
7
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTA1727L3
CYStek Product Specification
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
10000
1000
100
VCESAT
VCE=10V
IC=30IB
100
VCE=5V
IC=20IB
IC=10IB
10
10
1
10
100
1000
1
10
100
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
10000
6
5
4
3
2
1
0
VBESAT@IC=10IB
1000
100
1
10
100
1000
0
50
100
150
200
Collector Current--- IC(mA)
Ambient Temperature---TA(℃)
BTA1727L3
CYStek Product Specification
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 4/4
CYStech Electronics Corp.
SOT-223 Dimension
A
Marking:
AJ
B
C
3
1
2
F
D
E
Style: Pin 1.Base 2.Collector 3.Emitter
a1
H
I
G
3-Lead SOT-223 Plastic
Surface Mounted Package
CYStek Package Code: L3
a2
*: Typical
Millimeters
Inches
Millimeters
Inches
Min.
DIM
DIM
Min.
Max.
0.1220
0.2874
0.1457
0.0315
-
Min.
Max.
3.10
7.30
3.70
0.80
-
Max.
0.0709
0.0138
0.0039
-
Min.
1.40
0.25
0.02
*13o
0 o
Max.
1.80
0.35
0.10
-
A
B
C
D
E
F
0.1142
0.2638
0.1299
0.0236
*0.0906
0.2480
2.90
6.70
3.30
0.60
*2.30
6.30
G
H
0.0551
0.0098
0.0008
*13o
I
a1
a2
0 o
10 o
10 o
0.2638
6.70
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1727L3
CYStek Product Specification
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