BTA1759A3 [CYSTEKEC]
High Voltage PNP Epitaxial Planar Transistor; 高电压PNP外延平面晶体管型号: | BTA1759A3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | High Voltage PNP Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 1/4
CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTA1759A3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typical VCE(sat) = -0.2V at Ic / IB = -20mA /-2mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505A3.
Symbol
Outline
BTA1759A3
TO-92
B:Base
C:Collector
E:Emitter
E B C
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
-400
-400
-7
V
V
V
-300
625
mA
mW
°C
°C
Power Dissipation
Pd
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
BTA1759A3
CYStek Product Specification
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 2/4
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
-
V
IC=-50µA
BVCEO
BVEBO
ICBO
-400
-
-
V
IC=-1mA
-7
-
-
V
IE=-50µA
-
-
-10
-20
-10
-0.5
-1.2
270
-
µA
nA
µA
V
VCB=-400V
VCE=-300V, REB=4k
VEB=-6V
Ω
ICER
IEBO
-
-
-
-
-0.08
-
*VCE(sat)
*VBE(sat)
*hFE
-
IC=-20mA, IB=-2mA
-
100
-
V
-
MHz
pF
IC=-20mA, IB=-2mA
-
12
13
VCE=-10V, IC=-10mA
VCE=-10V, IC=-10mA, f=5MHz
VCB=-10V, f=1MHz
fT
Cob
-
-
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTA1759A3
CYStek Product Specification
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
100
10
1000
VCE=10V
VCE=6V
100
10
0.1
1
10
100
0.1
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1
1
VCE(sat)@IC=10IB
VBE(sat@IC=10IB
0.1
0.01
0.1
1
10
100
0.1
1
10
100
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
On Voltage vs Collector Current
700
600
500
400
300
200
100
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VBE(on)@VCE=3V
0.1
1
10
100
0
50
100
150
200
Collector Current---IC(mA)
Ambient Temperature---TA(℃)
BTA1759A3
CYStek Product Specification
Spec. No. : C309A3-R
Issued Date : 2003.10.15
Revised Date : 2004.04.02
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
Marking:
α2
A
B
1
2
3
A1759
α3
C
E
D
H
G
Style: Pin 1.Emitter 2.Base 3.Collector
α1
I
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
F
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
4.83
4.83
-
Min.
Max.
0.56
*2.54
*1.27
*5°
*2°
*2°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
4.33
4.33
12.70
0.36
-
G
H
0.0142 0.0220
0.36
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
0.5000
-
I
0.0142 0.0220
*0.0500
0.1323 0.1480
0.56
*1.27
3.76
α1
α2
α3
-
*2°
3.36
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1759A3
CYStek Product Specification
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