BTB1236AM3 [CYSTEKEC]
Silicon PNP Epitaxial Planar Transistor; PNP硅外延平面晶体管型号: | BTB1236AM3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | Silicon PNP Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:173K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
Silicon PNP Epitaxial Planar Transistor
BTB1236AM3
Description
• High BVCEO
• High current capability
Symbol
Outline
BTB1236AM3
SOT-89
B C E
Limits
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
-180
-160
-5
V
V
V
A
Collector Current (DC)
Collector Current (Pulse)
-1.5
ICP
-3 (Note 1)
A
W
0.6
Power Dissipation
PD
1
2
(Note 2)
(Note 3)
W
W
208
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient
RθJA
125 (Note 2)
62.5 (Note 3)
150
Junction Temperature
Storage Temperature
Tj
Tstg
-55~+150
°C
≦
≦
Note : 1. Single Pulse Pw 350µs, Duty 2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area measuring 40×40×1 mm
BTB1236AM3
CYStek Product Specification
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
Min. Typ.
Max.
Unit
Test Conditions
I =-50 A, I =0
BVCBO
-180
-
-
V
µ
C
E
BVCEO
BVEBO
ICBO
-160
-
-
V
IC=-1mA, IB=0
-5
-
-
-
V
I =-50 A, I =0
µ
E
C
-
-1
-1
-0.6
-1.5
200
-
µA
µA
V
VCB=-160V, IE=0
IEBO
-
-
-
VEB=-4V, IC=0
*VCE(sat)
*VBE(on)
hFE1
-
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
-
-
V
60
30
-
-
-
hFE2
-
-
fT
140
27
-
-
MHz
pF
Cob
-
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
K
P
Q
60~120
82~190
120~200
BTB1236AM3
CYStek Product Specification
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
100
10
1000
100
10
VCE=5V
VCE(SAT)@IC=10IB
1
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
On Voltage vs Collector Current
Power Derating Curve
10000
1000
100
2.5
2
VBE(ON)@VCE=5V
See Note 3 on page 1
See Note 2 on page 1
1.5
1
0.5
0
0
50
100
150
200
1
10
100
1000
10000
Ambient Temperature---TA(℃)
Collector Current---IC(mA)
BTB1236AM3
CYStek Product Specification
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
CYStech Electronics Corp.
Page No. : 4/4
SOT-89 Dimension
Marking:
A
2
1
3
H
C
AV2
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min. Max.
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
4.60
4.25
1.70
2.60
0.51
Min.
1.48
2.96
1.40
0.35
Max.
1.527
3.04
1.60
0.41
A
B
C
D
E
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
4.40
4.05
1.50
2.40
0.36
F
G
H
I
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1236AM3
CYStek Product Specification
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