BTB1236AT3 [CYSTEKEC]

Silicon PNP Epitaxial Planar Transistor; PNP硅外延平面晶体管


型号：	BTB1236AT3
厂家：	CYSTECH ELECTONICS CORP.
描述：	Silicon PNP Epitaxial Planar Transistor PNP硅外延平面晶体管晶体晶体管
文件：	总4页 (文件大小：175K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C854T3

Issued Date : 2005.08.23

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Silicon PNP Epitaxial Planar Transistor

BTB1236AT3

Description

• High BV_CEO

• High current capability

• Pb-free package

Symbol

Outline

BTB1236AT3

TO-126

B：Base

C：Collector

E：Emitter

E C B

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Power Dissipation @TA=25℃

Power Dissipation @TC=25℃

Junction Temperature

Storage Temperature

VCBO

VCEO

VEBO

-180

-160

-5

-1.5

-3

0.5

ICP

150

-55~+150

P^D

Tstg

°C

BTB1236AT3

CYStek Product Specification

Spec. No. : C854T3

Issued Date : 2005.08.23

Revised Date :

CYStech Electronics Corp.

Page No. : 2/4

Characteristics

(Ta=25°C)

Symbol

Min. Typ.

Max.

Unit

Test Conditions

I =-50 A, I =0

BV_CBO

-180

BV_CEO

BV_EBO

I_CBO

-160

I_C=-1mA, I_B=0

-5

I =-50 A, I =0

-1

-0.6

-1.5

200

µA

V_CB=-160V, I_E=0

V_EB=-4V, I_C=0

I_EBO

*V_CE(sat)

*V_BE(on)

h_FE1

I_C=-1A, I_B=-100mA

V_CE=-5V, I_C=-150mA

V_CE=-5V, I_C=-100mA

V_CE=-5V, I_C=-500mA

V_CE=-5V, I_C=-150mA

V_CB=-10V, I_E=0, f=1MHz

h_FE2

f_T

140

MHz

Cob

*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

Classification of hFE 1

Rank

Range

60~120

82~190

120~200

BTB1236AT3

CYStek Product Specification

Spec. No. : C854T3

Issued Date : 2005.08.23

Revised Date :

CYStech Electronics Corp.

Page No. : 3/4

Characteristic Curves

Current Gain vs Collector Current

Saturation Voltage vs Collector Current

1000

100

1000

100

VCE=5V

VCE(SAT)@IC=10IB

100

1000

10000

100

1000

10000

Collector Current---IC(mA)

Power Derating Curve

On Voltage vs Collector Current

10000

1000

100

1.2

VBE(ON)@VCE=5V

0.8

0.6

0.4

0.2

100

150

200

100

1000

10000

Ambient Temperature---TA(℃)

Collector Current---IC(mA)

Power Derating Curve

100

150

200

Case Temperature---TC(℃)

BTB1236AT3

CYStek Product Specification

Spec. No. : C854T3

Issued Date : 2005.08.23

Revised Date :

CYStech Electronics Corp.

Page No. : 4/4

TO-126 Dimension

Marking:

α 3

B1236A

α 4

Style: Pin 1.Emitter 2.Collector 3.Base

3-Lead TO-126 Plastic Package

CYStek Package Code: T3

α1

α 2

*: Typical

Inches

Millimeters

Inches

Min.

Millimeters

DIM

Min.

Max.

*3°

Min.

Max.

*3°

Max.

0.0319

0.0520

0.1890

0.1050

0.0550

*0.0217

0.1520

Min.

Max.

0.81

1.32

4.80

2.66

1.39

*0.55

3.86

0.0280

0.0480

0.1709

0.0950

0.0450

0.71

1.22

4.34

2.41

1.14

α1

α2

α3

α4

*3°

0.1500

0.2752

0.5315

0.2854

0.0374

0.1539

0.2791

0.6102

0.3039

0.0413

3.81

6.99

13.50

7.52

0.95

3.91

7.09

15.50

7.72

1.05

0.1378

3.50

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: 42 Alloy; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTB1236AT3

CYStek Product Specification

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