BTB1240I3 [CYSTEKEC]

Low Vcesat PNP Epitaxial Planar Transistor; 低VCESAT PNP外延平面晶体管


型号：	BTB1240I3
厂家：	CYSTECH ELECTONICS CORP.
描述：	Low Vcesat PNP Epitaxial Planar Transistor 低VCESAT PNP外延平面晶体管晶体晶体管
文件：	总4页 (文件大小：144K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C812I3

Issued Date : 2003.07.03

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Low Vcesat PNP Epitaxial Planar Transistor

BTB1240I3

Features

• Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A

• Excellent current gain characteristics

• Complementary to BTD1862I3

Symbol

Outline

BTB1240I3

TO-251

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

V^CBO

V^CEO

V^EBO

I^C

-40

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation (T^A=25℃)

Power Dissipation (T^C=25℃)

-2

I^CP

-5

(Note)

°C

Junction Temperature

Storage Temperature

150

-55~+150

Tstg

Note Single Pulse , Pw=10ms

BTB1240I3

CYStek Product Specification

Spec. No. : C812I3

Issued Date : 2003.07.03

Revised Date :

CYStech Electronics Corp.

Page No. : 2/4

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

I_C=-50µA, I_E=0

BV_CBO

BV_CEO

BV_EBO

I_CBO

-40

-30

-5

I_C=-1mA, I_B=0

I_E=-50µA, I_C=0

V_CB=-20V, I_E=0

V_EB=-4V, I_C=0

-1

560

µA

I_EBO

*V_CE(sat)

*h_FE

I_C=-3A, I_B=-0.1A

V_CE=-3V, I_C=-0.5A

f_T

Cob

100

MHz

V_CE=-5V, I_C=-0.1A, f=100MHz

V_CB=-10V, f =1MHz

*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%

Classification Of hFE

Rank

Range

82~180

120~270

180~390

270~560

BTB1240I3

CYStek Product Specification

Spec. No. : C812I3

Issued Date : 2003.07.03

Revised Date :

CYStech Electronics Corp.

Page No. : 3/4

Characteristic Curves

Saturation Voltage vs Collector Current

Current Gain vs Collector Current

1000

10000

1000

100

VCE(SAT) IC=40IB

VCE=6V

100

VCE=3V

IC=20IB

IC=40IB

VCE=1V

IC=10IB

100

1000

10000

200

100

1000

Collector Current---IC(mA)

10000

Collector Current---IC(mA)

Saturation Voltage vs Collector Current

Power Derating Curve

10000

1.2

VCE(SAT )@

IC=10IB

0.8

0.6

0.4

0.2

1000

100

150

200

100

1000

Collector Current---IC(mA)

Ambient Temperature---TA(℃)

Power Derating Curve

100

150

Case Temperature---TC(℃)

BTB1240I3

CYStek Product Specification

Spec. No. : C812I3

Issued Date : 2003.07.03

Revised Date :

CYStech Electronics Corp.

Page No. : 4/4

TO-251 Dimension

Marking:

B1240

Style: Pin 1.Base 2.Collector 3.Emitter

3-Lead TO-251 Plastic Package

CYStek Package Code: I3

*: Typical

Inches

Max.

Millimeters

Inches

Millimeters

DIM

Min.

Max.

0.55

1.50

0.60

2.40

6.80

7.20

Min.

Max.

Min.

Max.

0.0177

0.0354

0.0177

0.0866

0.2520

0.2677

0.0217

0.0591

0.0236

0.0945

0.2677

0.2835

0.45

0.90

0.45

2.20

6.40

6.80

0.2559

6.50

*0.1811

0.0354

0.0315

0.2165

*4.60

0.90

0.80

5.50

0.2047

5.20

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: 42 Alloy; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTB1240I3

CYStek Product Specification

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