BTB1243I3 [CYSTEKEC]
Low Vcesat PNP Epitaxial Planar Transistor; 低VCESAT PNP外延平面晶体管型号: | BTB1243I3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | Low Vcesat PNP Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:142K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C817I3
Issued Date : 2003.07.03
Revised Date : 2004.07.02
Page No. : 1/4
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1243I3
Features
• Low VCE(sat), VCE(sat)=-0.2 V (typical), at IC / IB = -2A / -0.1A
• Excellent current gain characteristics
• Complementary to BTD1864I3
Symbol
Outline
BTB1243I3
TO-251
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
-50
V
V
V
-50
-6
Collector Current (DC)
Collector Current (Pulse)
-3
A
ICP
-7
*1
Pd(TA=25℃)
Pd(TC=25℃)
Tj
1
15
Power Dissipation
W
Junction Temperature
Storage Temperature
150
-55~+150
°C
°C
Tstg
.
Note : *1 Single Pulse, Pw=10ms
BTB1243I3
CYStek Product Specification
Spec. No. : C817I3
Issued Date : 2003.07.03
Revised Date : 2004.07.02
Page No. : 2/4
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-50
-50
-6
-
-
-
V
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-30V, IE=0
VEB=-4V, IC=0
IC=-2A, IB=-0.1A
IC=-2A, IB=-0.2A
-
-
-
V
-
V
-
-1
-1
-0.5
-1.5
-
560
-
-
-
µA
µA
V
IEBO
-
-
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
-
-
-0.2
-1
-
V
52
82
52
-
-
VCE=-2V, IC=-20mA
VCE=-2V, IC=-0.1A
-
-
80
35
-
-
VCE=-2V, IC=-1A
MHz
pF
VCE=-5V, IC=-0.1A, f=100MHz
Cob
-
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank
P
Q
R
S
Range
82~180
120~270
180~390
270~560
BTB1243I3
CYStek Product Specification
Spec. No. : C817I3
Issued Date : 2003.07.03
Revised Date : 2004.07.02
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
100
10
1000
VCE(SAT)@IC=10IB
VCE=2V
1
100
0.1
1
10
100
1000 10000
0.1
1
10
100
1000 10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
Saturation Voltage & Collector Current
10000
1000
100
16
14
12
10
8
VBESAT@IC=10IB
6
4
2
0
0
50
100
150
200
0.1
1
10
100
1000 10000
Case Temperature---TC(℃)
Collector Current---IC(mA)
Power Derating Curve
1.2
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTB1243I3
CYStek Product Specification
Spec. No. : C817I3
Issued Date : 2003.07.03
Revised Date : 2004.07.02
Page No. : 4/4
CYStech Electronics Corp.
TO-251 Dimension
A
B
C
Marking:
D
H
B1243
F
G
3
I
K
E
2
1
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
J
*: Typical
Inches
Max.
Millimeters
Inches
Min.
Millimeters
DIM
DIM
Min.
Min.
Max.
0.55
1.50
0.60
2.40
6.80
7.20
Max.
-
Min.
6.50
Max.
-
A
B
C
D
E
F
0.0177
0.0354
0.0177
0.0866
0.2520
0.2677
0.0217
0.0591
0.0236
0.0945
0.2677
0.2835
0.45
0.90
0.45
2.20
6.40
6.80
G
H
I
J
K
0.2559
-
-
-
*0.1811
0.0354
0.0315
0.2165
-
-
-
*4.60
0.90
0.80
5.50
0.2047
5.20
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1243I3
CYStek Product Specification
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