BTC4226S3-5-T1-G [CYSTEKEC]

NPN Silicon Epitaxial Planar Transistor;
BTC4226S3-5-T1-G
型号: BTC4226S3-5-T1-G
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

NPN Silicon Epitaxial Planar Transistor

文件: 总7页 (文件大小:274K)
中文:  中文翻译
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Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/7  
Microwave Low Noise Amplifier  
NPN Silicon Epitaxial Planar Transistor  
BTC4226S3  
Description  
The BTC4226S3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and  
CATV band.  
Low Cre. Typ. Cob=0.7pF  
Pb-free and halogen-free package  
Symbol  
Outline  
SOT-323  
BTC4226S3  
BBase  
CCollector  
EEmitter  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Operating Junction Temperature Range  
Storage Temperature Range  
VCBO  
VCEO  
VEBO  
IC  
Pd  
RθJA  
Tj  
20  
12  
3
100  
150  
V
V
V
mA  
mW  
°C/W  
°C  
833  
-55~+150  
-65~+150  
Tstg  
°C  
BTC4226S3  
CYStek Product Specification  
Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/7  
Characteristics  
(Ta=25°C)  
Symbol  
BVCBO  
Min. Typ.  
Max.  
Unit  
Test Conditions  
20  
12  
3
-
-
-
-
-
-
V
V
V
nA  
nA  
mV  
V
IC=100μA  
IC=1mA  
IE=10μA  
VCB=20V  
VEB=2V  
BVCEO  
BVEBO  
ICBO  
-
-
-
-
100  
100  
150  
1.2  
0.95  
250  
-
IEBO  
*VCE(sat)  
*VBE(sat)  
*VBE(ON)  
*hFE  
-
-
IC=10mA, IB=1mA  
IC=10mA, IB=1mA  
VCE=3V, IC=10mA  
VCE=3V, IC=7mA  
VCE=3V, IC=7mA, f=1GHz  
VCE=3V, IC=7mA, f=1GHz  
VCE=3V, IE=0mA, f=1MHz  
-
-
0.7  
70  
7
0.82  
-
9
V
|
|²  
S21e  
fT  
dB  
GHz  
pF  
3
-
4.5  
0.7  
-
1.5  
Cre  
*Pulse Test: Pulse Width 300us, Duty Cycle2%  
Classification Of hFE  
Rank  
R24  
70~140  
R25  
125~250  
Range  
Ordering Information  
Device  
HFE Rank  
Package  
Shipping  
BTC4226S3-4-T1-G  
BTC4226S3-5-T1-G  
R24  
R25  
SOT-323 (Pb-free and halogen-free package)  
SOT-323 (Pb-free and halogen-free package)  
3000 pcs / Tape & Reel  
3000 pcs / Tape & Reel  
BTC4226S3  
CYStek Product Specification  
Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/7  
Typical Characteristics  
Emitter Grounded Output Characteristics  
Emitter Grounded Output Characteristics  
0.35  
0.3  
0.14  
0.12  
0.1  
1mA  
5mA  
0.25  
0.2  
2.5mA  
2mA  
0.08  
0.06  
0.04  
0.02  
0
1.5mA  
500uA  
400uA  
300uA  
0.15  
0.1  
200uA  
IB=500uA  
0.05  
0
IB=100uA  
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)  
VCE, Collector-to-Emitter Voltage(V)  
Current Gain vs Collector Current  
Current Gain vs Collector Current  
1000  
1000  
VCE=1V  
VCE=2V  
100  
100  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=0°C  
Ta=125°C  
Ta= 75°C  
Ta= 25°C  
Ta=0°C  
Ta=-40°C  
Ta=-40°C  
10  
10  
1
10  
100  
1
10  
IC, Collector Current(mA)  
100  
IC, Collector Current(mA)  
Current Gain vs Collector Current  
VCE=10V  
Current Gain vs Collector Current  
VCE=5V  
1000  
1000  
100  
100  
Ta=125°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=0°C  
Ta=75°C  
Ta=25°C  
Ta=0°C  
Ta=-40°C  
Ta=-40°C  
10  
10  
1
10  
IC, Collector Current(mA)  
100  
1
10  
IC, Collector Current(mA)  
100  
BTC4226S3  
CYStek Product Specification  
Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/7  
Typical Characteristics(Cont.)  
Saturation Voltage vs Collector Current  
Saturation Voltage vs Collector Current  
1000  
1000  
VCESAT@IC=10IB  
VCESAT@IC=5IB  
100  
100  
Ta=125°C  
Ta=125°C  
Ta=75°C  
Ta=25°C  
Ta=0°C  
Ta=75°C  
Ta=25°C  
Ta=0°C  
Ta=-40°C  
Ta=-40°C  
10  
10  
1
10  
IC, Collector Current(mA)  
100  
100  
100  
1
10  
IC, Collector Current(mA)  
100  
Saturation Voltage vs Collector Current  
Saturation Voltage vs Collector Current  
VBESAT@IC=5IB  
10000  
10000  
VBESAT@IC=10IB  
1000  
1000  
Ta=-40°C  
Ta=0°C  
Ta=-40°C  
Ta=0°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
Ta=25°C  
Ta=75°C  
Ta=125°C  
100  
100  
1
10  
1
10  
100  
IC, Collector CurrentmA)  
IC, Collector CurrentmA)  
Power Derating Curve  
Capacitance vs Reverse-biased Voltage  
Cib  
10  
200  
150  
100  
50  
1
Cob  
0
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
VR, Reverse-biased Voltage(V)  
Ambient Temperature---TA(℃)  
BTC4226S3  
CYStek Product Specification  
Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/7  
Reel Dimension  
Carrier Tape Dimension  
BTC4226S3  
CYStek Product Specification  
Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/7  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 °C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3°C/second max.  
3°C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183°C  
60-150 seconds  
240 +0/-5 °C  
217°C  
60-150 seconds  
260 +0/-5 °C  
Peak Temperature(TP)  
Time within 5°C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
6°C/second max.  
6°C/second max.  
6 minutes max.  
8 minutes max.  
Time 25 °C to peak temperature  
Note : All temperatures refer to topside of the package, measured on the package body surface.  
BTC4226S3  
CYStek Product Specification  
Spec. No. : C622S3  
Issued Date : 2013.06.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 7/7  
SOT-323 Dimension  
3
Marking:  
Date Code  
A
Q
C
A1  
□□□  
Lp  
1
2
detail Z  
bp  
e1  
W
B
e
A
E
Z
□□□ :  
D
HFE Rank  
Marking Code  
R24 R25  
R24 R25  
θ
v
A
He  
mm  
2
0
1
scale  
3-Lead SOT-323 Plastic  
Surface Mounted Package  
CYStek Package Code: S3  
Style: Pin 1.Base 2.Emitter 3.Collector  
*: Typical  
Inches  
Min. Max.  
Millimeters  
Inches  
Millimeters  
DIM  
DIM  
Min.  
0.80  
0.00  
0.30  
0.10  
1.80  
1.15  
1.3  
Max.  
1.10  
0.10  
0.40  
0.25  
2.20  
1.35  
-
Min.  
0.0256  
Max.  
-
Min.  
0.65  
2.00  
0.15  
0.13  
0.2  
Max.  
-
2.25  
0.45  
0.23  
-
A
A1  
bp  
C
D
E
0.0315 0.0433  
0.0000 0.0039  
0.0118 0.0157  
0.0039 0.0098  
0.0709 0.0866  
0.0453 0.0531  
e1  
He  
Lp  
Q
v
w
0.0787 0.0886  
0.0059 0.0177  
0.0051 0.0091  
0.0079  
0.0079  
-
-
-
0.2  
-
e
0.0512  
-
-
θ
10°  
0°  
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: Pure tin plated  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
BTC4226S3  
CYStek Product Specification  

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