BTC4226S3-5-T1-G [CYSTEKEC]
NPN Silicon Epitaxial Planar Transistor;型号: | BTC4226S3-5-T1-G |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | NPN Silicon Epitaxial Planar Transistor |
文件: | 总7页 (文件大小:274K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 1/7
Microwave Low Noise Amplifier
NPN Silicon Epitaxial Planar Transistor
BTC4226S3
Description
• The BTC4226S3 is a NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and
CATV band.
• Low Cre. Typ. Cob=0.7pF
• Pb-free and halogen-free package
Symbol
Outline
SOT-323
BTC4226S3
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
20
12
3
100
150
V
V
V
mA
mW
°C/W
°C
833
-55~+150
-65~+150
Tstg
°C
BTC4226S3
CYStek Product Specification
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min. Typ.
Max.
Unit
Test Conditions
20
12
3
-
-
-
-
-
-
V
V
V
nA
nA
mV
V
IC=100μA
IC=1mA
IE=10μA
VCB=20V
VEB=2V
BVCEO
BVEBO
ICBO
-
-
-
-
100
100
150
1.2
0.95
250
-
IEBO
*VCE(sat)
*VBE(sat)
*VBE(ON)
*hFE
-
-
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=3V, IC=10mA
VCE=3V, IC=7mA
VCE=3V, IC=7mA, f=1GHz
VCE=3V, IC=7mA, f=1GHz
VCE=3V, IE=0mA, f=1MHz
-
-
0.7
70
7
0.82
-
9
V
|
|²
S21e
fT
dB
GHz
pF
3
-
4.5
0.7
-
1.5
Cre
*Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Classification Of hFE
Rank
R24
70~140
R25
125~250
Range
Ordering Information
Device
HFE Rank
Package
Shipping
BTC4226S3-4-T1-G
BTC4226S3-5-T1-G
R24
R25
SOT-323 (Pb-free and halogen-free package)
SOT-323 (Pb-free and halogen-free package)
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
BTC4226S3
CYStek Product Specification
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.35
0.3
0.14
0.12
0.1
1mA
5mA
0.25
0.2
2.5mA
2mA
0.08
0.06
0.04
0.02
0
1.5mA
500uA
400uA
300uA
0.15
0.1
200uA
IB=500uA
0.05
0
IB=100uA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
VCE=1V
VCE=2V
100
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
Ta=-40°C
10
10
1
10
100
1
10
IC, Collector Current(mA)
100
IC, Collector Current(mA)
Current Gain vs Collector Current
VCE=10V
Current Gain vs Collector Current
VCE=5V
1000
1000
100
100
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=-40°C
10
10
1
10
IC, Collector Current(mA)
100
1
10
IC, Collector Current(mA)
100
BTC4226S3
CYStek Product Specification
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 4/7
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT@IC=10IB
VCESAT@IC=5IB
100
100
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Ta=-40°C
10
10
1
10
IC, Collector Current(mA)
100
100
100
1
10
IC, Collector Current(mA)
100
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
VBESAT@IC=5IB
10000
10000
VBESAT@IC=10IB
1000
1000
Ta=-40°C
Ta=0°C
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta=25°C
Ta=75°C
Ta=125°C
100
100
1
10
1
10
100
IC, Collector CurrentmA)
IC, Collector CurrentmA)
Power Derating Curve
Capacitance vs Reverse-biased Voltage
Cib
10
200
150
100
50
1
Cob
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
VR, Reverse-biased Voltage(V)
Ambient Temperature---TA(℃)
BTC4226S3
CYStek Product Specification
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTC4226S3
CYStek Product Specification
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC4226S3
CYStek Product Specification
Spec. No. : C622S3
Issued Date : 2013.06.05
Revised Date :
CYStech Electronics Corp.
Page No. : 7/7
SOT-323 Dimension
3
Marking:
Date Code
A
Q
C
A1
□□□
Lp
1
2
detail Z
bp
e1
W
B
e
A
E
Z
□□□ :
D
HFE Rank
Marking Code
R24 R25
R24 R25
θ
v
A
He
mm
2
0
1
scale
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
Inches
Min. Max.
Millimeters
Inches
Millimeters
DIM
DIM
Min.
0.80
0.00
0.30
0.10
1.80
1.15
1.3
Max.
1.10
0.10
0.40
0.25
2.20
1.35
-
Min.
0.0256
Max.
-
Min.
0.65
2.00
0.15
0.13
0.2
Max.
-
2.25
0.45
0.23
-
A
A1
bp
C
D
E
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
e1
He
Lp
Q
v
w
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
-
-
0.2
-
e
0.0512
-
-
θ
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4226S3
CYStek Product Specification
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