BTC4505A3 [CYSTEKEC]

High Voltage NPN Epitaxial Planar Transistor; 高电压NPN外延平面晶体管


型号：	BTC4505A3
厂家：	CYSTECH ELECTONICS CORP.
描述：	High Voltage NPN Epitaxial Planar Transistor 高电压NPN外延平面晶体管晶体晶体管
文件：	总4页 (文件大小：145K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C210A3-R

Issued Date : 2003.10.15

Revised Date :2004.04.02

Page No. : 1/4

CYStech Electronics Corp.

High Voltage NPN Epitaxial Planar Transistor

BTC4505A3

Features

• High breakdown voltage. (BV_CEO= 400V)

• Low saturation voltage, typically V_CE(sat) = 0.1V at I_C/ I_B=10mA / 1mA.

• Complementary to BTA1759A3

Symbol

Outline

BTC4505A3

TO-92

B：Base

C：Collector

E：Emitter

E B C

Limit

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

400

300

°C

Power Dissipation

625

Junction Temperature

Storage Temperature

Tstg

150

-55~+150

BTC4505A3

CYStek Product Specification

Spec. No. : C210A3-R

Issued Date : 2003.10.15

Revised Date :2004.04.02

Page No. : 2/4

CYStech Electronics Corp.

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BV_CBO

BV_CEO

BV_EBO

I_CBO

400

I_C=50µA, I_E=0

400

I_C=1mA, I_B=0

I_E=50µA, I_C=0

0.5

1.5

270

µA

V_CB=400V, I_E=0

V_CE=300V, R_EB=4k

V_EB=6V,I_C=0

I_CER

I_EBO

*V_CE(sat)

*V_BE(sat)

h_FE

0.1

I_C=10mA, I_B=1mA

100

MHz

V_CE=10V, I_C=10mA

f_T

Cob

V_CE=10V, I_C=10mA, f=10MHz

V_CB=10V, f=1MHz

*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%

BTC4505A3

CYStek Product Specification

Spec. No. : C210A3-R

Issued Date : 2003.10.15

Revised Date :2004.04.02

Page No. : 3/4

CYStech Electronics Corp.

Characteristic Curves

Current Gain vs Collector Current

Saturation Voltage vs Collector Current

1000

100

10000

1000

100

VCESAT@IC=10IB

HFE@VCE=10V

0.1

100

1000

0.1

100

1000

Collector Current ---IC(mA)

Power Derating Curve

Saturation Voltage vs Collector Current

700

600

500

400

300

200

100

10000

1000

100

VBESAT@IC=10IB

100

150

200

0.1

100

1000

Collector Current--- IC(mA)

Ambient Temperature---TA(℃)

BTC4505A3

CYStek Product Specification

Spec. No. : C210A3-R

Issued Date : 2003.10.15

Revised Date :2004.04.02

Page No. : 4/4

CYStech Electronics Corp.

TO-92 Dimension

Marking:

α2

C4505

α3

Style: Pin 1.Emitter 2.Base 3.Collector

α1

3-Lead TO-92 Plastic Package

CYStek Package Code: A3

*: Typical

Inches

Millimeters

Inches

Min. Max.

Millimeters

DIM

Min.

Max.

Min.

Max.

4.83

Min.

Max.

0.56

*2.54

*1.27

*5°

*2°

0.1704 0.1902

4.33

12.70

0.36

0.0142 0.0220

0.36

*0.1000

*0.0500

*5°

0.5000

0.0142 0.0220

*0.0500

0.1323 0.1480

0.56

*1.27

3.76

α1

α2

α3

*2°

3.36

*2°

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: 42 Alloy ; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTC4505A3

CYStek Product Specification

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