BTC4617C3 [CYSTEKEC]
General Purpose NPN Epitaxial Planar Transistor; 通用NPN外延平面晶体管型号: | BTC4617C3 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | General Purpose NPN Epitaxial Planar Transistor |
文件: | 总4页 (文件大小:161K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTC4617C3
Description
The BTC4617C3 is designed for use in driver stage of AF amplifier and low speed switching.
Symbol
Outline
BTC4617C3
SOT-523
C
B:Base
C:Collector
E:Emitter
B
E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
60
50
7
V
V
V
150
mA
Power Dissipation @Ta=25℃
Derate above 25℃
Pd
150
mW
Junction Temperature
Storage Temperature
Tj
Tstg
150
-55~+150
°C
°C
BTC4617C3
CYStek Product Specification
Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min. Typ.
Max.
Unit
Test Conditions
μ
60
-
-
-
-
V
V
V
IC=50 A
BVCEO
BVEBO
ICBO
50
-
IC=1mA
IE=50µA
VCB=60V
VEB=7V
7
-
-
-
100
100
0.5
560
-
nA
nA
V
IEBO
-
-
-
*VCE(sat)
hFE
-
120
-
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
-
-
fT
Cob
180
2
MHz
pF
-
3.5
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Marking Code and Classification of hFE
Rank
Q
R
S
hFE Range
Marking
120-270
BQ
180-390
BR
270-560
BS
BTC4617C3
CYStek Product Specification
Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
100
10
HFE@VCE=6V
VCE(SAT)@IC=10IB
100
0.1
1
10
100
1000
0.1
1
10
100
1000
Collector Current --- IC(mA)
Collector Current --- IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1
1000
VBE(SAT)@IC=10IB
FT@VCE=12V
0.1
100
1
10
100
0.1
1
10
100
1000
Collector Current --- IC(mA)
Collector Current --- IC(mA)
Power Derating Curve
160
140
120
100
80
60
40
20
0
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTC4617C3
CYStek Product Specification
Spec. No. : C204C3
Issued Date : 2004.03.02
Revised Date :
CYStech Electronics Corp.
Page No. : 4/4
SOT-523 Dimension
Marking:
C
A
3
B_
D
K
B
_ : hFE Rank Code
1
2
F
G
H
I
E
3-Lead SOT-523 Plastic
Surface Mounted Package
CYStek Package Code: C3
J
Style: Pin 1.Base 2.Emitter 3.Collector
L
N
M
O
*: Typical
Inches
Min. Max.
Millimeters
Inches
Millimeters
DIM
DIM
Min.
Max.
0.40
1.70
0.50
0.85
0.50
0.30
0.30
-
Min.
*0.0197
Max.
-
Min.
Max.
A
B
C
D
E
F
0.0079 0.0157
0.0591 0.0669
0.0118 0.0197
0.0295 0.0335
0.0118 0.0197
0.0039 0.0118
0.0039 0.0118
0.20
1.50
0.30
0.75
0.30
0.10
0.10
*0.50
I
*0.50
1.55
0.70
0.57
0.05
0.10
0
-
J
0.0610 0.0650
0.0276 0.0315
0.0224 0.0248
0.0020 0.0059
0.0039 0.0118
1.65
0.80
0.63
0.15
0.30
0.08
K
L
M
N
O
G
H
0
0.0031
*0.0197
-
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4617C3
CYStek Product Specification
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