DTA114EN3-0-T1-G [CYSTEKEC]
PNP Digital Transistors (Built-in Resistors);
| 型号： | DTA114EN3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | PNP Digital Transistors (Built-in Resistors) |
| 文件： | 总6页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C355N3
Issued Date : 2003.05.27
Revised Date :2015.09.18
Page No. : 1/6
CYStech Electronics Corp.
PNP Digital Transistors (Built-in Resistors)
DTA114EN3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTC114EN3
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-23
DTA114EN3
R1=10kΩ , R2=10 kΩ
IN(B) : Base
OUT(C) : Collector
GND(E) : Emitter
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
DTA114EN3-0-T1-G
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTA143EN3
CYStek Product Specification
Spec. No. : C355N3
Issued Date : 2003.05.27
Revised Date :2015.09.18
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
Input Voltage
Symbol
Limits
Unit
VCC
VIN
IO
IO(max)
Pd
Tj
Tstg
-50
-40~+10
-50
-100
200
150
-55~+150
V
V
mA
mA
mW
°C
Output Current
Power Dissipation
Junction Temperature
Storage Temperature
°C
Electrical Characteristics (Ta=25°C)
Parameter
Input Voltage
Symbol Min. Typ. Max. Unit
Test Conditions
VI(off)
VI(on)
VO(on)
II
-
-3
-
-
-
-
-0.5
-
-0.3
V
V
V
VCC=-5V, IO=-100μA
VO=-0.3V, Io=-10mA
IO/II=-10mA/-0.5mA
Output Voltage
Input Current
-
-
-0.88 mA VI=-5V
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
IO(off)
GI
R1
R2/R1
fT
-
30
7
0.8
-
-
-
-0.5
-
13
1.2
-
μA
-
kΩ
-
VCC=-50V, VI=0V
VO=-5V, IO=-5mA
-
-
10
1
250
MHz VCE=-10V, IC=-5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
DTA143EN3
CYStek Product Specification
Spec. No. : C252N3
Issued Date : 2003.05.27
Revised Date :2016.06.02
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Output Current
Output Voltage vs Output Current
10
1
1000
100
10
Vo = 5V
Io / Ii = 20
0.1
0.01
1
10
Output Current---I (mA)
100
0.1
1
10
100
Output Current---I (mA)
O
O
Output Current vs Input Voltage(OFF characteristics)
Input Voltage vs Output Current(ON characteristics)
Vo = 0.3V
10
100
10
1
V
CC
= 5 V
1
0.1
0.01
0.1
0
0.5
1
1.5
2
2.5
3
0.1
1
10
100
Output Current---I (mA)
Input Voltage---VI(OFF)(V)
O
Power Derating Curve
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---T (℃)
A
DTA114EN3
CYStek Product Specification
Spec. No. : C252N3
Issued Date : 2003.05.27
Revised Date :2016.06.02
Page No. : 4/6
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
DTA114EN3
CYStek Product Specification
Spec. No. : C252N3
Issued Date : 2003.05.27
Revised Date :2016.06.02
Page No. : 5/6
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTA114EN3
CYStek Product Specification
Spec. No. : C252N3
Issued Date : 2003.05.27
Revised Date :2016.06.02
Page No. : 6/6
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
Date Code: Year+Month
Year: 5→2015, 6→2016
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
DIM
Millimeters
Inches
Min. Max.
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.70
1.30
0.50
2.30
0.10
Min.
Max.
0.20
0.67
1.15
2.95
0.65
0.50
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
0.08
0.30
0.85
2.10
0.25
0.30
L1
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead :Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTA114EN3
CYStek Product Specification
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