MTA06N03J3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | MTA06N03J3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总7页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID
RDS(ON)
25V
80A
6mΩ
MTA06N03J3
Features
• 100% UIS testing, @VD=15V, L=0.1mH, VG=10V, IL=40V, rated VDS=25V N-CH
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
Outline
MTA06N03J3
TO-252
G：Gate
G D S
D：Drain
S：Source
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
25
±20
80
50
170
53
140
40
83
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
ID
A
(Note 1)
IDM
IAS
EAS
EAR
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω
mJ
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation @ TC=25℃
Total Power Dissipation @ TC=100℃
(Note 2)
Pd
W
45
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
°C
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
MTA06N03J3
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.8
75
Unit
°C/W
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
25
1
-
-
-
80
-
-
-
1.5
-
-
-
-
3
100
1
25
-
6
9.5
-
V
V
nA
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
±
±
VGS= 20, VDS=0V
VDS =20V, VGS =0V
IDSS
*ID(ON)
*RDS(ON)
*GFS
μA
VDS =20V, VGS =0V, Tj=125°C
VDS =10V, VGS =10V
VGS =10V, ID=30A
VGS =5V, ID=24A
VDS =5V, ID=24A
-
A
5.3
7.6
25
Ω
m
-
S
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
-
-
-
-
-
-
-
-
-
-
-
-
53
30
8
17
22
16
65
10
4840
620
435
1.2
-
-
-
-
-
-
-
-
-
-
-
-
nC
ns
ID=30A, VDS=15V, VGS=10V
VDS=15V, ID=25A, VGS=10V,
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
Ω
RGS=2.7
pF
VGS=0V, VDS=15V, f=1MHz
VGS=15mV, VDS=0V, f=1MHz
Ω
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
-
32
12
80
170
1.3
-
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, VGS=0, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
TO-252
(RoHS compliant & Halogen-free)
Shipping
Marking
A06N03
MTA06N03J3
2500 pcs / Tape & Reel
MTA06N03J3
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 3/7
Characteristic Curves
ON-REGION CHARACTERISTIC
ON- RESISTANCEVARIATION WITH DRAIN CURRENT AND GATEVOLTAGE
100
3
4.5V
7V
10V
5V
V GS= 3.5V
4.3V
4V
80
60
2.5
2
4.5V
4V
5V
3.8V
5.5V
40
20
0
1.5
1
6V
7V
3.5V
10V
0.5
0
2.5
3
0.5
1
1.5
2
0
60
80
100
20
40
V ,DRAIN- SOURCEVOLTAGE( V )
DS
ID ,DRAIN CURRENT( A )
ON- RESISTANCEVARIATION WITH TEMPERATURE
ON-RESISTANCE VARIATION WITH GATE-TO-SOURCE VOLTAGE
1.8
1.6
0.025
0.020
0.015
0.010
0.005
0
ID =30A
GS = 10V
ID = 30A
V
1.4
1.2
1.0
°
T = 125 C
A
°
T = 25 C
A
0.8
0.6
175
-50
25
50
75
100
125
150
-25
0
10
2
6
8
4
T ,JUNCTION TEMPERATURE(° C)
j
VGS ,GATETO SOURCEVOLTAGE
BODYDIODEFORWARD VOLTAGEVARIATION WITH SOURCE
CURRENT AND TEM PERATURE
TRANSFERCHARACTERISTICS
60
10
100
V = 0V
GS
VDS= 10V
T
A
= -55 ° C
T = 125°C
A
25 °C
125 °C
80
1
60
40
25°C
0.1
-55°C
0.01
20
0
0.001
0.0001
0
0.2
1.0
1.2
1.4
0.8
3
4
5
0.4
0.6
2
0
1
VGS,GATETOSOURCEVOLTAGE
V
SD ,BODYDIODEFORWARD VOLTAGE( V )
MTA06N03J3
CYStek Product Specificatio
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 4/7
Characteristic Curves(Cont.)
CA PA CITA N CE CH A RA CTERISTICS
G A T E C H A R G E C H A R A C T E R IS T IC S
ID = 3 0 A
4
3
2
1 2
1 0
1 0
1 0
Ciss
1 0
8
V
D S = 5 V
1 0 V
Co ss
Cr ss
1 5 V
6
4
2
0
f = 1 M H z
V
GS= 0 V
0
5
1 0
1 5
2 0
2 5
3 0
6 0
0
2 0
4 0
V
D S -D RA IN -t o -SO U RCE V LTA G E (V )
Q
g ,G A T E C H A R G E (n C )
MAXIMUM SAFE OPERATI NG AREA
SINGLEPULSEMAXIMUM POWERDISSIPATION
300
200
3000
2500
SINGLEPULSE
°
θJC
R
= 1.8 C/ W
°
T
C
= 25 C
100
50
2000
1500
1000
500
0
20
10
5
2
1
GS
V =10V
SINGLEPULSE
°
R = 1.8 C/W
θJC
°
Tc = 25 C
0.5
0.01
10
100
1000
0.1
1
50
5
30
20
0.5
1
2
3
10
SINGLEPULSETIME(SEC)
VDS ,DRAIN- SOURCE VOLTAGE
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.05
Notes:
0.05
DM
0.02
0.01
0.03
0.02
t1
t2
1.Duty Cycle,D =
θJC
2.R =1.8°C/W
3.T - TC = P * R (t )
θJC
J
Si n gl e Pul se
θJC
θJC
4.R (t)=r(t) * R
0.01
-2
10
-1
10
100
1000
10
1
t 1 ,Time (sec)
MTA06N03J3
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTA06N03J3
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA06N03J3
CYStek Product Specification
Spec. No. : C442J3
Issued Date : 2009.03.06
Revised Date :
CYStech Electronics Corp.
Page No. : 7/7
TO-252 Dimension
A
C
Marking:
D
B
Device Name
Date code
F
G
L
3
H
2
E
K
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Millimeters
Inches
Min. Max.
0.0866 0.1102
Millimeters
DIM
DIM
Min.
Max.
Min.
0.45
1.65
0.90
0.45
6.20
5.40
Max.
0.55
1.95
1.50
0.60
6.80
5.80
Min.
Max.
2.80
*2.30
1.14
0.88
5.50
1.60
A
B
C
D
E
F
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
G
H
I
J
K
L
2.20
-
-
-
*0.0906
0.0449
0.0346
-
-
-
0.2047 0.2165
0.0551 0.0630
5.20
1.40
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA06N03J3
CYStek Product Specification
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