MTB020N03KN3 [CYSTEKEC]

N-Channel Enhancement Mode MOSFET;


型号：	MTB020N03KN3
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode MOSFET
文件：	总9页 (文件大小：470K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 1/9

CYStech Electronics Corp.

30V N-Channel Enhancement Mode MOSFET

BVDSS

30V

5.9A

MTB020N03KN3

ID@VGS=10V, TA=25°C

RDSON@VGS=10V, ID=5A

RDSON@VGS=4.5V, ID=4A

17.1mΩ(typ)

21.1mΩ(typ)

Features

• Simple drive requirement

• Small package outline

• ESD protected gate

• Pb-free lead plating and halogen-free package

Symbol

Outline

MTB020N03KN3

SOT-23

G：Gate

S：Source

D：Drain

Ordering Information

Device

Package

SOT-23

(Pb-free lead plating and halogen-free package)

Shipping

MTB020N03KN3-0-T1-G

3000 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T1 : 3000 pcs / tape & reel,7” reel

Product rank, zero for no rank products

Product name

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 2/9

CYStech Electronics Corp.

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

VDS

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

5.9

4.7

VGS

Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)

Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)

Pulsed Drain Current (Notes 1, 2)

IDM

1.38

Maximum Power Dissipation@ TA=25℃ (Note 3)

Linear Derating Factor

0.01

W/°C

°C

Operating Junction and Storage Temperature Range

Tj ; Tstg

-55~+150

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Thermal Performance

Parameter

Symbol

RθJA

Limit

Unit

Thermal Resistance, Junction-to-Ambient, max

Thermal Resistance, Junction-to-Case, max

(Note)

°C/W

RθJC

Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad

Electrical Characteristics (Tj=25°C, unless otherwise noted)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

V_GS(th)

I_GSS

2.5

V_GS=0V, I_D=250μA

V_DS=V_GS, I_D=250μA

V_GS= 16V, V_DS=0V

μA

V_DS=30V, V_GS=0V

V_DS=24V, V_GS=0V(Tj=70°C)

V_GS=10V, I_D=5A

I_DSS

17.1

21.1

*R_DS(ON)

*G_FS

mΩ

V_GS=4.5V, I_D=4A

4.5

V_DS=10V, I_D=4A

Dynamic

Ciss

Coss

Crss

t_d(ON)

t_r

450

V_DS=15V, V_GS=0V, f=1MHz

5.8

18.6

33.8

11.8

V_DS=15V, I_D=1A, V_GS=10V, R_G=6

t_d(OFF)

t_f

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 3/9

CYStech Electronics Corp.

Qgs

Qgd

1.2

3.8

V_DS=15V, I_D=5A, V_GS=10V

Source-Drain Diode

*I_S

*I_SM

*V_SD

Trr

1.8

7.2

1.2

0.78

10.5

3.8

V_GS=0V, I_S=1.5A

V_GS=0V, I_F=2.3A, dI_F/dt=100A/μs

Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Recommended Soldering Footprint

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 4/9

CYStech Electronics Corp.

Typical Characteristics

Brekdown Voltage vs Junction Temperature

Typical Output Characteristics

1.4

1.2

4.5V

10V,9V,8V,7V,6V,5V

0.8

0.6

0.4

3.5V

I =250 A,

V_GS=0V

V_GS=3V

-75 -50 -25

25 50 75 100 125 150 175

VDS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

V_GS=0V

Tj=25°C

0.8

0.6

0.4

0.2

V_GS=4.5V

V_GS=10V

Tj=150°C

0.01

0.1

100

I_D, Drain Current(A)

I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

1000

2.4

V_GS=10V, I_D=5A

R_DS(ON)@Tj=25°C : 17.1mΩ typ.

I_D=5A

1.6

1.2

0.8

0.4

800

600

400

200

V_GS=4.5V, I_D=4A

R_DS(ON)@Tj=25°C : 21.1mΩ typ.

-75 -50 -25

25 50 75 100 125 150 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 5/9

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

1.4

1.2

1000

100

Ciss

I_D=1mA

oss

0.8

0.6

0.4

Crss

I =250 A

-75 -50 -25

25 50 75 100 125 150 175

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

V_DS=10V

Gate Charge Characteristics

V_DS=24V

V_DS=15V

0.1

V_DS=15V

Ta=25°C

Pulsed

I_D=5A

0.01

0.001

0.01

0.1

I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

100

R_DSON

Limited

100μs

1ms

10ms

100ms

T_A=25°C, Tj=150°C

0.1

V_GS=10V, R _JA=90°C/W

T_A=25°C, V_GS=10V, R =90°C/W

Single Pulse

0.01

0.1

_DS, Drain-Source Voltage(V)

100

Tj, Junction Temperature(°C)

125

150

175

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 6/9

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Typical Transfer Characteristics

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

V_DS=10V

T_J(MAX)=150°C

T_A=25°C

_JA=90°C/W

0.001

0.01

0.1

Pulse Width(s)

100

1000

V_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

0.2

1.R _JA(t)=r(t)*R

0.1

2.Duty Factor, D=t /t

3.T -T =P *R_θ(t)

0.05

_JA=90°C/W

4.R

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 7/9

CYStech Electronics Corp.

Reel Dimension

Carrier Tape Dimension

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 8/9

CYStech Electronics Corp.

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

217°C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 °C

260 +0/-5 °C

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB020N03KN3

CYStek Product Specification

Spec. No. : C143N3

Issued Date : 2016.01.21

Revised Date : 2016.02.22

Page No. : 9/9

CYStech Electronics Corp.

SOT-23 Dimension

Marking:

Date Code

TYN3

3-Lead SOT-23 Plastic

Surface Mounted Package

CYStek Package Code: N3

Style: Pin 1.Gate 2.Source 3.Drain

Inches

DIM

Millimeters

Inches

Millimeters

DIM

Min.

Max.

Min.

Max.

3.04

1.70

1.30

0.50

2.30

0.10

Min.

Max.

Min.

Max.

0.20

0.67

1.15

2.95

0.65

0.50

0.1102 0.1204

0.0472 0.0669

0.0335 0.0512

0.0118 0.0197

0.0669 0.0910

0.0000 0.0040

2.80

1.20

0.89

0.30

1.70

0.00

0.0032

0.0118

0.0335

0.0830

0.0098

0.0118

0.0079

0.0266

0.0453

0.1161

0.0256

0.0197

0.08

0.30

0.85

2.10

0.25

0.30

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB020N03KN3

CYStek Product Specification

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