MTB025N04Q8-0-T3-G [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTB025N04Q8-0-T3-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：485K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

MTB025N04Q8

BV^DSS

ID @ TA=25°C, VGS=10V

40V

7.3A

RDS(ON)@VGS=10V, ID=6A

17.8 mΩ(typ)

RDS(ON)@VGS=4.5V, ID=5A

21.9mΩ(typ)

Features

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Repetitive Avalanche Rated

• Pb-free & Halogen-free package

Symbol

Outline

MTB025N04Q8

SOP-8

G：Gate D：Drain S：Source

Pin 1

Ordering Information

Device

Package

SOP-8

(RoHS compliant & Halogen-free package)

Shipping

MTB025N04Q8-0-T3-G

2500 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

±20

7.3

5.8

30 *1

Continuous Drain Current @ TA=25°C, VGS=10V

Continuous Drain Current @ TA=70°C, VGS=10V

Pulsed Drain Current

IDM

IAS

Avalanche Current @ L=0.1mH

Avalanche Energy @ L=1mH, ID=10A, VDD=15V

Repetitive Avalanche Energy @ L=0.05mH

EAS

EAR

50 *3

1.6 *2

2.5

TA=25 °C

Total Power Dissipation

1.6

TA=70 °C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : *1 Pulse width limited by maximum junction temperature

*2. Duty cycle ≤ 1%

*3. 100% tested by conditions of L=0.1mH, I^AS=6A, VGS=10V, VDD=15V

Thermal Data

Parameter

Thermal Resistance, Junction-to-case

Thermal Resistance, Junction-to-ambient (Note)

Symbol

RθJC

RθJA

Value

Unit

°C/W

Note : 40°C / W when mounted on a 1 in pad of 2 oz copper, t≤10s; 125 C/W when mounted on minimum pad.

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

G_FS

2.5

V_GS=0V, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=3A

5.4

100

I_GSS

V_GS= 20V, V_DS=0V

V_DS=32V, V_GS=0V

V_DS=32V, V_GS=0V, Tj=125°C

V_GS=10V, I_D=6A

I_DSS

μA

17.8

21.9

*R_DS(ON)

V_GS=4.5V, I_D=5A

Dynamic

Qgs

Qgd

6.3

1.4

2.9

499

*1, 2

V_DS=20V, V_GS=4.5V, I_D=7A

V_DS=20V, V_GS=0V, f=1MHz

Ciss

Coss

Crss

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

Characteristics (Cont. TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Dynamic

t_{d(ON) *1, 2}

6.2

17.6

5.8

4.8

VDS=20V, ID=1A, VGS=10V,

*1, 2

t_{d(OFF) *1, 2}

RGS=3.3Ω

t_f

*1, 2

f=1MHz

Source-Drain Diode Ratings and Characteristics

I_S

1.2

I_{SM *3}

V_{SD *1}

trr

0.75

7.9

4.3

IS=1A, VGS=0V

IF=7A, dIF/dt=100A/μs

Qrr

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended Soldering Footprint

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

3.5V

10V,9V,8V,7V,6V,5V,4.5V,4V

0.8

0.6

0.4

I_D=250 A,

V_GS=0V

V_GS=2.5V

-75 -50 -25

0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

V_DS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

1.2

100

1.0

0.8

0.6

0.4

0.2

Tj=25°C

V_GS=4.5V

V_GS=10V

Tj=150°C

0.1

100

I_DR, Reverse Drain Current(A)

I_D, Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

3.2

V_GS=10V, I_D=6A

R_DS(ON)@Tj=25°C : 17.8mΩ typ.

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

I_D=6A

-75 -50 -25

25 50 75 100 125 150 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

1000

1.4

1.2

1.0

0.8

0.6

0.4

Ciss

I_D=1mA

100

oss

Crss

I =250 A

f=1MHz

-75 -50 -25

25 50 75 100 125 150 175

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

V_DS=10V

Gate Charge Characteristics

V_DS=20V, 25V, 30V

from left to right

0.1

V_DS=15V

Pulsed

Ta=25°C

I_D=7A

0.01

0.001

0.01

0.1

I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

100

R_DS(ON)

Limited

100μs

1ms

10ms

100ms

T_A=25°C, Tj=150°C

0.1

0.01

V_GS=10V,R _JA=50°C/W

T_A=25°C,R _JA=50°C/W,V_GS=10V

Single Pulse

100

125

150

175

0.01

0.1

100

_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

Typical Transfer Characteristics

300

250

200

150

100

V_DS=10V

T_J(MAX)=150°C

T_A=25°C

_JA=50°C/W

0.0001 0.001

0.01

0.1

100

V_GS, Gate-Source Voltage(V)

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

1.R _JA(t)=r(t)*R

2.Duty Factor, D=t₁/t₂

0.1

3.T_JM-T_A=P_DM*R _JA(t)

0.05

0.02

0.01

4.R _JA=50°C/W

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(T^Smax)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB012N04Q8

CYStek Product Specification

Spec. No. : C884Q8

Issued Date : 2017.02.20

Revised Date :

CYStech Electronics Corp.

Page No. : 9/9

SOP-8 Dimension

Marking:

B025

N04

Device Name

Date Code

Date Code(counting from left to right) :

1^stcode: year code, the last digit of Christian year

^ndcode : month code, Jan→A, Feb→B, Mar→C, Apr→D

May→E, Jun→F, Jul→G, Aug→H, Sep→J,

Oct→K, Nov→L, Dec→M

3^rdand 4^thcodes : prodcution serial number, 01~99

8-Lead SOP-8 Plastic Package

CYStek Package Code: Q8

Millimeters

DIM

Inches

Min.

Millimeters

Inches

DIM

Min.

Max.

0.069

0.010

0.061

0.020

0.010

0.200

Min.

3.800

5.800

Max.

4.000

6.200

Min.

0.150

0.228

Max.

0.157

0.244

1.350

0.100

1.350

0.330

0.170

4.700

1.750

0.250

1.550

0.510

0.250

5.100

0.053

0.004

0.053

0.013

0.006

0.185

1.270 (BSC)

0.050 (BSC)

0.400

1.270

8°

0.016

0.050

8°

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB012N04Q8

CYStek Product Specification

相关型号：