MTB050N15BRH8 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTB050N15BRH8
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总10页 (文件大小：839K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 1/10

N-Channel Enhancement Mode Power MOSFET

MTB050N15BRH8

BV^DSS

150V

16A

ID@VGS=10V, TC=25°C

ID@VGS=10V, TA=25°C

4.2A

45mΩ

50mΩ

VGS=10V, ID=3.4A

Features

RDSON(TYP)

VGS=4.5V, ID=3.3A

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTB050N15BRH8

Pin 1

G：Gate D：Drain S：Source

Pin 1

Ordering Information

Device

Package

Shipping

DFN 5 ×6

MTB050N15BRH8-0-T6-G

3000 pcs / tape & reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 2/10

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

10s Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

150

±20

Continuous Drain Current @ TC=25°C, VGS=10V

Continuous Drain Current @ TC=100°C, VGS=10V (Note 1)

(Note 1)

I^D

6.4

5.1

4.6

4.2

3.4

3.0

Continuous Drain Current @ TA=25°C, VGS=10V

Continuous Drain Current @ TA=70°C, VGS=10V

Continuous Drain Current @ TA=85°C, VGS=10V

Pulsed Drain Current

Avalanche Current @ L=0.1mH

Avalanche Energy @ L=1mH, ID=16A, VDD=50V

Repetitive Avalanche Energy @ L=0.05mH

TC=25℃

(Note 2)

(Note 3)

(Note 4)

(Note 3)

(Note 1)

IDSM

IDM

IAS

EAS

EAR

64 *1

128

5 *2

14.4

TC=100℃

Total Power Dissipation

5.7

4.0

3.6

2.5

1.8

1.6

TA=25°C

TA=70°C

TA=85°C

(Note 2)

P^DSM

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol Typical Maximum Unit

t≤10s

Steady State

Thermal Resistance, Junction-to-ambient

(Note 2)

RθJA

°C/W

Thermal Resistance, Junction-to-case

RθJC

3.0

3.5

Note : 1 The power dissipation P_Dis based on T_J(MAX)=150 C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2 The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment

with T_A=25 C. The power dissipation P_DSMis based on R_θJAand the maximum allowed junction

temperature of 150°C. The value in any given application depends on the user’s specific board design.

3 Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150 C. Ratings are based on low frequency

and low duty cycles to keep initial TJ=25°C.

4.100% tested by conditions of L=0.1mH, I^AS=4.5A, VGS=10V, VDD=25V

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 3/10

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

G_FS

150

2.5

V_GS=0V, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=20A

22.7

100

I_GSS

V_GS= 20V, V_DS=0V

V_DS=120V, V_GS=0V

V_DS=120V, V_GS=0V, Tj=125°C

V_GS=10V, I_D=3.4A

I_DSS

μA

R_{DS(ON) *1}

Dynamic

V_GS=4.5V, I_D=3.3A

Ciss

Coss

Crss

1396

25.2

5.1

13.2

18.6

40.2

6.8

1.1

V_GS=0V, V_DS=75V, f=1MHz

V_DS=75V, V_GS=10V, I_D=3.4A

Qgs

Qgd

*1, 2

t_{d(ON) *1, 2}

V_DD=75V, I_D=3.4A, V_GS=10V,

*1, 2

t_{d(OFF) *1, 2}

RG=1Ω

t_f

*1, 2

f=1MHz

Source-Drain Diode

I_S

1.2

I_{SM *3}

V_{SD *1}

trr

0.79

43.1

70.8

IS=3.2A, VGS=0V

I^F=3.2A, dIF/dt=100A/μs

Qrr

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 4/10

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V

3.5V

0.8

0.6

0.4

I_D=250 A,

_GS=0V

V_GS=3V

_DS, Drain-Source Voltage(V)

-75 -50 -25

0 25 50 75 100 125 150 175

Tj, Junction Temperature(°C)

Reverse Drain Current vs Source-Drain Voltage

Static Drain-Source On-State resistance vs Drain Current

1.2

100

0.8

0.6

0.4

0.2

V_GS=4.5V

V_GS=10V

Tj=25°C

Tj=150°C

0.1

100

I_DR, Reverse Drain Current(A)

I_D, Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

150

120

2.8

2.4

V_GS=10V, I_D=3.4A

I_D=3.4A

1.6

1.2

0.8

0.4

R_DS(ON)@Tj=25°C : 45 mΩ typ

-75 -50 -25

25 50 75 100 125 150 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 5/10

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

1000

I_D=1mA

oss

100

0.8

0.6

0.4

I_D=250μA

Crss

f=1MHz

-75 -50 -25

25 50 75 100 125 150 175

10 20 30 40 50 60 70 80 90

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

100

V_DS=30V, 75V, 120V

from left to right

V_DS=10V

Pulsed

0.1

0.01

Ta=25°C

I_D=3.4A

0.001

0.01

0.1

100

I , Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

100

R_DS(ON)

Limited

100μs

1ms

10ms

100ms

T_C=25°C, Tj=150°C

V_GS=10V, R =3.5°C/W

V_GS=10V,R _JC=3.5°C/W

Single Pulse

0.1

100

125

150

175

0.1

100

1000

_DS, Drain-Source Voltage(V)

T_C, Case Temperature(°C)

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 6/10

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Case

Typical Transfer Characteristics

2000

1800

1600

1400

1200

1000

800

V_DS=10V

T_J(MAX)=150°C

T_C=25°C

_JC=3.5°C/W

600

400

200

0.0001 0.001

0.01

0.1

100

V_GS, Gate-Source Voltage(V)

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

1.R _JC(t)=r(t)*R

0.1

2.Duty Factor, D=t₁/t₂

0.05

3.T_JM-T_C=P_DM*R _JC(t)

4.R _JC=3.5°C/W

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 7/10

Recommended Soldering Footprint & Stencil Design

unit : mm

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 8/10

Reel Dimension

Carrier Tape Dimension

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 9/10

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(T^Smax)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB050N15BRH8

CYStek Product Specification

Spec. No. : C033H8

Issued Date : 2018.03.09

Revised Date :

CYStech Electronics Corp.

Page No. : 10/10

DFN5×6 Dimension

Marking:

B050N

15BR

Device Name

Date Code

8-Lead DFN5×6 Plastic Package

CYS Package Code : H8

Millimeters

DIM

Inches

Min.

Millimeters

Inches

DIM

Min.

0.90

0.00

0.33

0.20

4.80

3.61

5.90

5.70

Max.

0.043

0.002

0.020

0.012

0.197

0.156

Min.

3.38

Max.

3.78

Min.

Max.

1.10

0.05

0.51

0.30

5.00

3.96

6.10

5.80

0.035

0.000

0.013

0.008

0.189

0.142

0.133

0.149

1.27 BSC

0.050 BSC

0.41

1.10

0.51

0.06

8°

0.61

0.71

0.20

12°

0.016

0.043

0.020

0.002

8°

0.024

0.028

0.008

12°

0.232

0.224

0.240

0.228

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB050N15BRH8

CYStek Product Specification

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