MTB050P10H8 [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;型号: | MTB050P10H8 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | P-Channel Enhancement Mode Power MOSFET |
文件: | 总11页 (文件大小:610K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 1/11
P-Channel Enhancement Mode Power MOSFET
BVDSS
-100V
-20A
MTB050P10H8
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
-4.4A
39.5mΩ
45.3mΩ
VGS=-10V, ID=-15A
Features
RDSON(TYP)
VGS=-4.5V, ID=-12A
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Symbol
Outline
DFN5×6
MTB050P10H8
Pin 1
D
D
D
D
D
D
D
D
S
G
S
S
S
S
S
G
G:Gate D:Drain S:Source
Pin 1
Ordering Information
Device
Package
Shipping
3000 pcs / Tape & Reel
DFN5×6
MTB050P10H8-0-T6-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 2/11
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
10s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-100
V
±20
-20
-12.7
Continuous Drain Current @ TC=25°C, VGS=-10V (Note1)
Continuous Drain Current @ TC=100°C, VGS=-10V (Note1)
Continuous Drain Current @ TA=25°C, VGS=-10V (Note2)
Continuous Drain Current @ TA=70°C, VGS=-10V (Note2)
ID
-7.4
-5.9
-4.4
A
IDSM
-3.5
Pulsed Drain Current
(Note3)
IDM
IAS
-80
-20
Avalanche Current@L=1mH
(Note4)
Avalanche Energy @ L=2mH, ID=-20A, VDD=-50V (Note4)
EAS
400
42
16.8
mJ
W
TC=25℃
TC=100℃
TA=25°C
TA=70°C
(Note1)
(Note1)
(Note2)
(Note2)
PD
Total Power Dissipation
5.4
3.4
1.9
1.2
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol Typical Maximum
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
Rth,j-c
2.5
18
50
3
23
65
t≤10s
Steady State
°C/W
Rth,j-a
(Note2)
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Pulse width limited by junction temperature TJ(MAX)=150 C.
°
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C. 100% tested by conditions of
L=1mH, IAS=-20A, VGS=-10V, VDD=-50V.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
-100
-1
-
-
-
-
-
-
-
-
-2.5
-
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-15V, ID=-10A
V
-
23
-
-
-
S
nA
*1
±
100
-1
±
IGSS
VGS= 20V
VDS =-80V, VGS =0V
VDS =-80V, VGS =0, Tj=70°C
VGS =-10V, ID=-15A
IDSS
μA
-10
50
60
39.5
45.3
Ω
m
RDS(ON) *1
VGS =-4.5V, ID=-12A
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 3/11
Dynamic *4
Ciss
-
-
-
-
-
-
-
-
-
-
-
2191
159
65
40.7
7.2
-
-
-
-
-
-
-
-
-
-
-
pF
VDS=-50V, VGS=0V, f=1MHz
Coss
Crss
Qg
*1, 2
nC
VDS=-80V, VGS=-10V, ID=-15A
VDS=-50V, ID=-15A, VGS=-10V
Qgs
*1, 2
Qgd
4.0
*1, 2
td(ON) *1, 2
13.4
23.6
68.6
21.2
4
tr
*1, 2
ns
Ω
A
Ω
RG=2.7
td(OFF) *1, 2
tf
*1, 2
Rg
f=1MHz
Source-Drain Diode
IS
-
-
-
-
-
-
-
-20
-80
-1
-
*1
ISM *3
VSD *1
trr
-0.71
28.4
40.9
V
ns
nC
IS=-2A, VGS=0V
IF=-15A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
*4.Guaranteed by design, not subject to production testing.
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 4/11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
80
10V
4
V
70
60
50
40
30
20
10
0
9V
8V
7V
6V
5V
0.8
0.6
0.4
3.5
V
ID=-250μA,
3V
VGS=0V
-VGS=2.5V
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
1
VGS=0V
VGS=-4.5V
VGS=-10V
Tj=25°C
0.8
0.6
0.4
0.2
Tj=150°C
10
0
2
4
6
8
10
0.1
1
10
100
-ID, Drain Current(A)
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=-10V, ID=-15A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
2.4
2
450
400
350
300
250
200
150
100
50
ID=-15A
1.6
1.2
0.8
0.4
0
RDS(ON)@ Tj=25°C : 39.5mΩ (typ.)
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB050P10H8
CYStek Product Specificatio
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 5/11
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=-1mA
1000
0.8
0.6
0.4
0.2
0
C
oss
100
10
ID=-250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
10
100
RDSON
Limited
8
6
4
2
0
10
1
100μs
1m
10ms
100ms
1s
0.1
0.01
VDS=-80V
TA=25°C, VGS=-10V,Tj=150°C
JA
ID=-15A
θ
R
=65°C/W, Single Pulse
DC
0
5
10 15 20 25 30 35 40 45
Qg, Total Gate Charge(nC)
0.01
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=-10V
Maximum Drain Current vs Junction Temperature
100
10
5
4
3
2
1
0
VDS=-15V
1
0.1
TA=25°C, VGS=-10V,
JA
Pulsed
Ta=25°C
θ
R
=65°C/W
0.01
25
50
75
100
125
150
175
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
Tj, Junction Temperature(°C)
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 6/11
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
VDS=-10V
TJ(MAX)=150°C
TA=25°C
θ
R
JA=65°C/W
0
0
1
2
3
4
5
6
7
8
0.0001 0.001 0.01
0.1
Pulse Width(s)
1
10
100 1000
-VGS, Gate-Source Voltage(V)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
25
20
15
10
5
100
RDSON
Limited
10
1
100μs
1ms
10ms
100ms
DC
JC
VGS=-10V, Rθ =3°C/W
TC=25°C, VGS=-10V,Tj=150°C
JC
θ
R
=3°C/W, Single Pulse
0
0.1
25
50
75
100
125
150
175
0.1
1
10
100
1000
TC, Case Temperature(°C)
-VDS, Drain-Source Voltage(V)
Single Pulse Maximum Power Dissipation
Power Derating Curve
50
600
500
400
300
200
100
0
45
40
35
30
25
20
15
10
5
TJ(MAX)=150°C
TC=25°C
θ
R
JC=3°C/W
0
0
25
50
75
100
125
150
175
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
TC, Case Temperature(℃)
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 7/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JA
JA
θ
θ
1.R (t)=r(t)*R
0.1
2.Duty Factor, D=t1/t2
JA
0.05
θ
3.TJM-TA=PDM*R (t)
JA
θ
4.R =65°C/W
0.02
0.01
0.01
0.001
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
1
D=0.5
JC
θ
1.RθJC(t)=r(t)*R
0.2
0.1
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
JC
θ
4.R =3 °C/W
0.05
0.02
0.01
0.1
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 8/11
Recommended Soldering Footprint & Stencil Design
unit : mm
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 9/11
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB050P10H8
CYStek Product Specification
Spec. No. : C975H8
Issued Date : 2016.08.01
Revised Date :
CYStech Electronics Corp.
Page No. : 11/11
DFN5×6 Dimension
Marking :
Device
Name
B050
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
Inches
Millimeters
Inches
Min.
0.047
0.014
DIM
Min.
Max.
Min.
Max.
Min.
1.190
0.350
Max.
1.390
0.450
Max.
0.055
0.018
DIM
A
0.900
1.000
0.035
0.039
k
b
A3
D
E
D1
E1
D2
E2
0.254 REF
0.010 REF
4.944
5.974
3.910
3.375
4.824
5.674
5.096
6.126
4.110
3.575
4.976
5.826
0.195
0.235
0.154
0.133
0.190
0.223
0.201
0.241
0.162
0.141
0.196
0.229
e
L
L1
H
θ
1.270 TYP.
0.050 TYP.
0.559
0.424
0.574
10°
0.711
0.576
0.726
12°
0.022
0.017
0.023
10°
0.028
0.023
0.029
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB050P10H8
CYStek Product Specification
相关型号:
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