MTB150N10J3-0-T3-G [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTB150N10J3-0-T3-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：441K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

BVDSS

100V

2.3A

MTB150N10J3

ID @ VGS=10V, TA=25°C

ID @ VGS=10V, TC=25°C

163 mΩ

178 mΩ

VGS=10V, ID=10A

RDSON(TYP)

VGS=4.5V, ID=10A

Features

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Repetitive Avalanche Rated

• Pb-free lead plating and halogen-free package

Equivalent Circuit

Outline

MTB150N10J3

TO-252(DPAK)

D S

G：Gate D：Drain S：Source

Ordering Information

Device

Shipping

2500 pcs / tape& reel

Package

TO-252

MTB150N10J3-0-T3-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

100

±20

Continuous Drain Current @ VGS=10V, TC=25°C

Continuous Drain Current @ VGS=10V, TC=100°C

Continuous Drain Current @ VGS=10V, TA=25°C

Continuous Drain Current @ VGS=10V, TA=70°C

Pulsed Drain Current

4.4

I^D

2.3

1.8

IDM

EAS

EAR

28 *1

24.5 *3

2.5

Avalanche Energy @ L=1mH, ID=7A, VDD=50V

Repetitive Avalanche Energy @ L=0.05mH

TC=25℃

TC=100℃

TA=25℃

T^A=70℃

P^D

Total Power Dissipation

2.5 *2

1.6 *2

P^DSM

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Note : 1. Pulse width limited by maximum junction temperature.

Symbol

RθJC

RθJA

Value

50 *2

Unit

°C/W

2. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by customer’s PCB characteristics.

125°C/W when mounted on a minimum pad of 2 oz. copper.

3. 100% tested by conditions of L=0.1mH, IAS=5A, VGS=10V, VDD=50V, rated 100V

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

V_GS(th)

G_FS

100

7.8

2.5

V_GS=0V, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=7A

100

I_GSS

V_GS= 20V

V_DS=80V, V_GS=0V

V_DS=80V, V_GS=0V, Tj=85°C

V_GS=10V, I_D=10A

I_DSS

μA

210

235

163

178

R_{DS(ON) *1}

Dynamic

V_GS=4.5V, I_D=10A

Ciss

Coss

Crss

258

6.3

1.1

3.0

V_DS=25V, V_GS=0V, f=1MHz

VDS=80V, VGS=10V, ID=10A

*1, 2

Qgs

Qgd

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

2.7

2.2

0.1

4.6

16.6

18.2

16.8

3.1

Max.

Unit

Test Conditions

*1, 2

V_DS=50V, V_GS=4.5V, I_D=5A

Qgs

*1, 2

Qgd

*1, 2

t_{d(ON) *1, 2}

*1, 2

VDS=50V, ID=1A, VGS=10V, RGS=6Ω

t_{d(OFF) *1, 2}

t_f

*1, 2

f=1MHz

Source-Drain Diode

I_S

I_{SM *3}

V_{SD *1}

trr

Qrr

1.2

0.91

IS=10A, VGS=0V

IF=10A, dIF/dt=100A/μs

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended soldering footprint

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V,9V,8V,7V,6V,5V

3.5V

0.8

0.6

0.4

I_D=250μA,

V_GS=0V

V_GS=2.5

-75 -50 -25

25 50 75 100 125 150 175

V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

1000

1.2

V_GS=0V

0.8

0.6

0.4

0.2

Tj=25°C

Tj=150°C

V_GS=4.5V

V_GS=10V

100

0.01

0.1

100

I_D, Drain Current(A)

_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

1000

900

800

700

600

500

400

300

200

100

I_D=10A

2.5

V_GS=10V, I_D=10A

1.5

0.5

R_DS(ON)@Tj=25°C : 163mΩ typ.

-65 -35

-5

85 115 145 175

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

1000

1.4

1.2

Ciss

I_D=1mA

100

0.8

0.6

0.4

oss

I_D=250μA

Crss

-65 -35

-5

85 115 145 175

_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

V_DS=10V

Gate Charge Characteristics

V_DS=50V

0.1

V_DS=15V

V_DS=20V

V_DS=80V

Ta=25°C

Pulsed

I_D=10A

0.01

0.001

0.01

0.1

I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

100

100 s

R_DSON

Limited

1ms

10ms

100ms

0.1

0.01

T_C=25°C, Tj=150°C

V_GS=10V, R _JC=5°C/W

V_GS=10V, R =5°C/W

Single Pulse

100

125

150

175

0.1

100

1000

V_DS, Drain-Source Voltage(V)

T_C, Case Temperature(°C)

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Case

Typical Transfer Characteristics

1000

900

800

700

600

500

400

300

200

100

V_DS=10V

T_J(MAX)=150°C

T_C=25°C

_JC=5°C/W

0.001

0.01

0.1

100

V_GS, Gate-Source Voltage(V)

Pulse Width(s)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.R _JC(t)=r(t)*R

0.1

2.Duty Factor, D=t /t

0.05

0.02

0.01

3.T -T =P *R_θ(t)

_JC=5°C/W

4.R

0.01

Single Pulse

1.E-02

0.001

1.E-04

1.E-03

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(T^Smax)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB150N10J3

CYStek Product Specification

Spec. No. : C868J3

Issued Date : 2016.06.06

Revised Date :

CYStech Electronics Corp.

Page No. : 9/9

TO-252 Dimension

Marking:

Device

Name

B150

N10

□□□□

Date

Code

3-Lead TO-252 Plastic Surface Mount Package

CYStek Package Code: J3

Style: Pin 1.Gate 2.Drain 3.Source

4.Drain

Inches

Min.

Millimeters

Inches

Millimeters

DIM

Max.

0.094

0.005

0.048

0.034

0.023

0.264

0.215

0.244

Min.

Max.

2.400

0.127

1.210

0.860

0.580

6.700

5.460

6.200

Min.

0.086

0.172

Max.

0.094

0.188

Min.

2.186

4.372

Max.

2.386

4.772

0.087

0.000

0.039

0.026

0.018

0.256

0.201

0.236

2.200

0.000

0.990

0.660

0.460

6.500

5.100

6.000

0.163 REF

0.190 REF

0.386 0.409

0.114 REF

4.140 REF

4.830 REF

9.800 10.400

2.900 REF

0.055

0.024

0.067

0.039

1.400

0.600

1.700

1.000

0.026 REF

0.211 REF

0.650 REF

5.350 REF

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead : Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB150N10J3

CYStek Product Specification

相关型号：