MTB180N06KV8 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB180N06KV8 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：774K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 1/ 10
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
60V
4.2A
2.6A
MTB180N06KV8
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=3A
RDS(ON)@VGS=4.5V, ID=2.5A
170mΩ(typ)
200mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
ESD protected gate
Pb-free lead plating and Halogen-free package
Symbol
Outline
MTB180N06KV8
DFN3×3
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
Shipping
DFN 3 ×3
MTB180N10KV8-0-T6-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 2/ 10
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
60
±20
4.2
2.7
2.6
2.1
10
Continuous Drain Current @TC=25C, VGS=10V
Continuous Drain Current @TC=100C, VGS=10V
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 5)
(Note 5)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
ID
IDSM
A
IDM
IAS
IS
Avalanche Current @L=0.1mH
Body Diode Continuous Forward Current
1
6.8
Single Pulse Avalanche Energy @ L=1mH, ID=0.4Amps, VDD=25V
EAS
EAR
0.08
(Note 4)
mJ
Repetitive Avalanche Energy
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
0.08
6.2
2.5
2.5
1.6
TC=25C
TC=100C
TA=25C
TA=70C
PD
Power Dissipation
W
PDSM
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Tj, Tstg -55~+150
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
20
50
Unit
C/W
°
Note : 1.The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=150°C.
°
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C. Guaranteed by design, not subject to
100% testing.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
.
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 3/ 10
CYStech Electronics Corp.
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
60
-
1
-
-
-
-
-
-
-
0.03
-
1.4
-
-
-
2.5
-
10
1
5
V
V/C
V
VGS=0V, ID=250μA
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=1A
*GFS
IGSS
S
±
±
VGS= 16V, VDS=0V
μA
-
-
VDS =48V, VGS =0V
VDS =48V, VGS =0V, Tj=55C
VGS =10V, ID=3A
IDSS
170
200
220
265
Ω
m
*RDS(ON)
VGS =4.5V, ID=2.5A
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
3.5
-
-
-
-
-
-
-
-
4.1
0.9
0.5
3.2
16.6
10.2
4.8
121
17
5.3
-
-
-
-
-
-
nC
VDS=40V, ID=1.8A, VGS=10V
Ω
ns
VDS=30V, ID=3A, VGS=10V, RG=1
180
Coss
Crss
Rg
-
-
-
pF
VGS=0V, VDS=30V, f=1MHz
f=1MHz
-
-
12
5.8
Ω
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
2.2
10
1.1
-
A
0.79
7.3
2.7
V
ns
nC
IS=0.45A, VGS=0V
VGS=0V, IF=0.5A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 4/ 10
CYStech Electronics Corp.
Recommended Soldering Footprint
unit : mm
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 5/ 10
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
10
9
8
7
6
5
4
3
2
1
0
10V
9V
4V
3.5V
8V
7V
6V
5V
4.5V
0.8
0.6
0.4
VGS=3V
ID=250μA,
VGS=0V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
1
2
3
VDS, Drain-Source Voltage(V)
4
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
VGS=4.5V
VGS=10V
Tj=150°C
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
400
350
300
250
200
150
100
50
2.4
VGS=10V, ID=3A
ID=3A
RDSON @ Tj=25°C : 170 mΩ typ
2
1.6
1.2
0.8
0.4
0
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 6/ 10
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1000
1.4
1.2
1
Ciss
ID=1mA
100
Coss
0.8
0.6
0.4
10
ID=250μA
Crss
1
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
1
10
VDS=10V
8
6
4
2
0
VDS=15V
0.1
0.01
VDS=40V
ID=1.8A
Ta=25°C
Pulsed
0
1
2
3
4
5
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3
100
2.5
2
RDSON
10
1
Limited
100μs
1ms
1.5
1
10ms
100ms
1s
TA=25°C, Tj=150°C
VGS=10V, RθJA=50°C/W
Single Pulse
0.1
0.5
0
TA=25°C, VGS=10V, RθJA=50°C/W
DC
0.01
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 7/ 10
CYStech Electronics Corp.
Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
10
100
80
60
40
20
0
VDS=10V
9
8
7
6
5
4
3
2
1
0
TJ(MAX)=150°C
TA=25°C
RθJA=50°C/W
0.001
0.01
0.1
1
Pulse Width(s)
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
0.1
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 8/ 10
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 9/ 10
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
240 +0/-5 C
260 +0/-5 C
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB180N06KV8
CYStek Product Specification
Spec. No. : C052V8
Issued Date : 2018.10.16
Revised Date : 2019.01.11
Page No. : 10/ 10
CYStech Electronics Corp.
DFN3×3 Dimension
Marking:
D D D D
B180
N06K
Date
Code
S
S
S
G
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
DIM
Inches
Millimeters
Inches
Min.
DIM
Min.
Max.
Min.
Max.
Min.
0.200
0.550
0.300
0.180
0.000
0.000
0.315
9°
Max.
0.400
0.750
0.500
0.480
0.100
0.100
0.515
13°
Max.
0.016
0.030
0.020
0.019
0.004
0.004
0.020
13°
A
A1
A2
D
0.605
0.850
0.026
0.033
b
e
L
L1
L2
L3
H
0.008
0.022
0.012
0.007
0.000
0.000
0.012
9°
0.152 REF
0.006 REF
0.000
2.900
2.300
2.900
3.150
1.535
0.050
3.100
2.600
3.100
3.450
1.935
0.000
0.114
0.091
0.114
0.124
0.060
0.002
0.122
0.102
0.122
0.136
0.076
D1
E
E1
E2
θ
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB180N06KV8
CYStek Product Specification
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