MTB4D0A03BDH8 [CYSTEKEC]
Dual N-Channel Enhancement Mode Power MOSFET;型号: | MTB4D0A03BDH8 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | Dual N-Channel Enhancement Mode Power MOSFET |
文件: | 总9页 (文件大小:376K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTB4D0A03BDH8
BVDSS
30V
44.9A
ID@VGS=10V, TC=25ꢀC
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
28.4A
9.7A
7.8A
ID@VGS=10V, TC=100ꢀC
ID@VGS=10V, TA=25ꢀC
ID@VGS=10V, TA=70ꢀC
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
5.3mΩ(typ)
7.1mΩ(typ)
Pb-free lead plating and Halogen-free package
Equivalent Circuit
Outline
DFN5×6
MTB4D0A03BDH8
Pin 1
Pin 1
G:Gate D:Drain S:Source
Ordering Information
Device
Package
Shipping
DFN 5 ×6
MTB4D0A03BDH8-0-T6-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
44.9
28.4
9.7
7.8
180
40
Continuous Drain Current @TC=25C, VGS=10V
Continuous Drain Current @TC=100C, VGS=10V
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current @L=0.1mH
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
ID
IDSM
A
IDM
IAS
Single Pulse Avalanche Energy @ L=0.1mH, ID=40Amps,
VDD=15V
Repetitive Avalanche Energy
EAS
EAR
80
(Note 5)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
3.1
31
12.4
1.5
1.0
TC=25C
PD
TC=100C
TA=25C
Power Dissipation
W
PDSM
TA=70C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Tj, Tstg -55~+150
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
4
85
Unit
C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The value in any given application depends on the user’s specific board design. The
°
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150 C.
°
.
3 Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C.
4. When mounted on1 in² copper pad of FR-4 board ; 125C/W when mounted on minimum copper pad.
5. 100% tested by conditions of L=0.5mH, IAS=15A, VGS=10V, VDD=15V.
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
∆BVDSS/∆Tj
VGS(th)
30
-
-
-
2.5
-
V
V/C
V
VGS=0V, ID=250μA
-
1.0
-
0.03
-
15.2
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=7A
*GFS
S
nA
ꢁ
ꢁ
IGSS
-
-
-
-
-
-
100
1
VGS= 20V, VDS=0V
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=85C
IDSS
μA
10
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 9
-
-
5.3
7.1
7
10
VGS =10V, ID=30A
VGS =4.5V, ID=20A
Ω
m
*RDS(ON)
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
33.4
4.8
8.6
47
-
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
nC
VDS=15V, ID=30A, VGS=10V
13.8
19.4
47.2
10.6
1538
287
212
1.6
22
29
65
22
2000
375
300
5
Ω
ns
VDS=15V, ID=19A, VGS=10V, RG=1
pF
VGS=0V, VDS=15V, f=1MHz
f=1MHz
-
0.5
Ω
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
26
104
1.2
23
A
0.82
14
7
V
ns
nC
IS=20A, VGS=0V
VGS=0V, IF=18A, dIF/dt=100A/μs
*Qrr
12
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
unit : mm
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
150
10V
9V
120
8V
7V
VGS=4V
6V
90
5V
VGS=3.5V
0.8
0.6
0.4
60
ID=250μA,
VGS=0V
VGS=3V
30
0
VGS=2.5V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(ꢀC)
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
10
1
1.2
1
0.8
0.6
0.4
0.2
Tj=25ꢀC
VGS=4.5V
VGS=10V
Tj=150ꢀC
0
4
8
12
16
20
0.01
0.1
1
10
100
IDR, Reverse Drain Current(A)
ID, Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
30
3
VGS=10V, ID=30A
2.5
2
25
20
15
10
5
ID=30A
RDS(ON)@ꢋꢌ=ꢍ5ꢀC : 5.3ꢈΩ ꢅyp
1.5
1
0.5
0
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(ꢀC)
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 9
Typical Characteristics (Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
ID=1mA
Ciss
1000
0.8
0.6
0.4
ID=250μA
Coss
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(ꢀC)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
8
6
4
2
0
VDS=10V
1
VDS=15V
VDS=10V
Pulsed
ꢋa=ꢍ5ꢀC
0.1
0.01
ID=30A
0
4
8
12 16 20 24 28 32 36
Total Gate Charge---Qg(nC)
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
1000
100
10
RDS(ON)
Limited
100μs
1ms
1
10ms
100ms
1s
TC=ꢍ5ꢀC, ꢋꢌ=ꢎ5ꢏꢀ, ꢐGS=10V
RθJC=85ꢀCꢑꢒ, ꢊꢄꢆgꢓe Pꢔꢓꢃe
0.1
0.01
VGS=10V, RθJA=85ꢀCꢑꢒ
DC
25
50
75
100
125
150
175
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction ꢋeꢈpeꢕaꢅꢔꢕeꢇꢀCꢉ
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
160
140
120
100
80
150
120
90
60
30
0
VDS=10V
TJ(MAX)=ꢎ5ꢏꢀC
TA=ꢍ5ꢀC
RθJC=85ꢀCꢑꢒ
60
40
20
0
0
1
2
3
4
5
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=85ꢀC/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
Soldering Time
5 +1/-1 seconds
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
Ramp down rate
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Time 25 C to peak temperature
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB4D0A03BDH8
CYStek Product Specification
Spec. No. : C092H8
Issued Date : 2018.08.06
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 9
DFN5×6 Dimension
Marking:
Device
Name
B4D0A
03BD
Date
Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
Min. Max.
0.050 BSC
DIM
Min.
Max.
Max.
0.043
0.020
0.012
0.197
0.156
0.240
0.228
0.149
Min.
Max.
A
b
0.900
0.330
0.200
4.800
3.610
5.900
5.700
3.380
1.100
0.510
0.300
5.000
3.960
6.100
5.800
3.780
0.035
0.013
0.008
0.189
0.142
0.232
0.224
0.133
e
H
K
1.270 BSC
0.410
1.100
0.510
0.060
0.500
0ꢀ
0.610
-
0.710
0.200
-
H
K
0.410
C
1.100
0.510
0.060
0.500
0ꢀ
D1
D2
E
L
L
L1
M
α
L1
M
α
12ꢀ
E1
E2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB4D0A03BDH8
CYStek Product Specification
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