MTD300N20J3-0-T3-G [CYSTEKEC]
N -Channel Enhancement Mode Power MOSFET;
| 型号： | MTD300N20J3-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N -Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=3A
RDS(ON)@VGS=4.5V, ID=2A
200V
8.3A
MTD300N20J3
302mΩ(typ)
303mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTD300N20J3
TO-252(DPAK)
G
D S
G：Gate D：Drain
S：Source
Ordering Information
Device
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
MTD300N20J3-0-T3-G
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
200
±20
V
A
8.3
5.3
18
4
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
ID
IDM
IAS
Avalanche Current
Avalanche Energy @ L=10mH, IAS=4A, VDD=50V, VGS=10V *3
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
EAS
EAR
80
5
50
mJ
PD
W
Total Power Dissipation @TC=100℃
20
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
.
Note : *1 Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=10mH, IAS=3A, VGS=10V, VDD=50V
Thermal Data
Parameter
Symbol
RƟJC
RƟJA
Value
2.5
110
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
∆BVDSS/∆Tj
VGS(th)
200
-
0.2
-
6
-
-
-
2.5
-
100
1
25
V
V/°C
V
S
nA
VGS=0V, ID=250μA
-
1
-
-
-
-
-
-
Reference to 25°C, ID=250μA
VDS =VGS, ID=250μA
VDS =15V, ID=2A
GFS
*1
±
±
IGSS
VGS= 20V, VDS=0V
-
-
VDS =160V, VGS =0V
VDS =160V, VGS =0V, Tj=125°C
VGS =10V, ID=3A
IDSS
μA
302
303
380
395
Ω
m
RDS(ON) *1
VGS =4.5V, ID=2A
Dynamic
Qg
Qgs
Qgd
td(ON) *1, 2
-
-
-
-
-
-
-
15.6
1.8
4.3
6.2
7.8
-
-
-
-
-
-
-
*1, 2
nC
ID=3A, VDS=160V, VGS=10V
VDS=100V, ID=3A, VGS=10V,
*1, 2
*1, 2
tr
*1, 2
ns
Ω
RG=25
td(OFF) *1, 2
55.8
35.4
tf
*1, 2
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Ciss
Coss
Crss
-
-
-
529
46
24
-
-
-
pF
VGS=0V, VDS=25V, f=1MHz
Source-Drain Diode
IS
-
-
-
-
-
-
-
8.3
18
1.2
-
*1
A
ISM *3
VSD *1
trr
0.78
54
97
V
ns
nC
IS=2A, VGS=0V
IF=3A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
18
16
14
12
10
8
10V,9V,8V,7V,6V,5V,4V
3
3
.5V
V
0.8
0.6
0.4
6
4
μ
ID=250 A,
VGS=0V
2
VGS=2.5V
15
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
20
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=4.5V
VGS=10V
Tj=150°C
100
0
2
4
6
8
10
0.01
0.1
1
10
100
ID, Drain Current(A)
I
DR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
2.4
ID=3A
900
800
700
600
500
400
300
200
2
1.6
1.2
0.8
0.4
0
VGS=10V, ID=3A
RDS(ON)@Tj=25°C : 302mΩ
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
1000
Ciss
μ
ID=250 A
100
C
oss
0.8
0.6
0.4
Crss
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
DS, Drain-Source Voltage(V)
25
30
V
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=100V
Forward Transfer Admittance vs Drain Current
100
10
10
VDS=10V
8
6
4
2
0
VDS=40V
1
VDS=15V
VDS=160V
ID=3A
0.1
0.01
Ta=25°C
Pulsed
0
2
4
6
8
10
12
14
16
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
100
μ
100 s
RDSON
Limited
10
1
1ms
10ms
100ms
1s
DC
0.1
0.01
TC=25°C, Tj=150°C
VGS=10V, R JC=2.5°C/W
Single Pulse
θ
θJC
VGS=10V, R =2.5°C/W
25
50
75
100
125
150
175
0.1
1
10
DS, Drain-Source Voltage(V)
100
1000
V
TC, Case Temperature(°C)
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
16
1000
900
800
700
600
500
400
300
200
100
0
VDS=10V
14
12
10
8
TJ(MAX)=150°C
TC=25°C
R
JC=2.5°C/W
θ
6
4
2
0
0.001
0.01
0.1 1
Pulse Width(s)
10
100
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
θ
1.R JC(t)=r(t)*R
θJC
0.1
0.1
1
2.Duty Factor, D=t /t
2
0.05
0.02
0.01
JM
C
DM
3.T -T =P *Rθ (t)
JC
θJC=2.5°C/W
4.R
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTD300N20J3
CYStek Product Specification
Spec. No. : C875J3
Issued Date : 2016.01.13
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
TO-252 Dimension
Marking:
4
Device
Name
D300
N20
□□□□
Date
Code
2
3
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Inches
Min.
Millimeters
Inches
Millimeters
DIM
DIM
Max.
0.094
0.005
0.048
0.034
0.034
0.023
0.023
0.264
0.215
0.244
Min.
Max.
2.400
0.127
1.210
0.860
0.860
0.580
0.580
6.700
5.460
6.200
Min.
0.086
0.172
Max.
0.094
0.188
Min.
2.186
4.372
Max.
2.386
4.772
A
A1
B
b
b1
C
C1
D
D1
E
0.087
0.000
0.039
0.026
0.026
0.018
0.018
0.256
0.201
0.236
2.200
0.000
0.990
0.660
0.660
0.460
0.460
6.500
5.100
6.000
e
e1
H
K
L
L1
L2
L3
P
0.163 REF
0.190 REF
0.386 0.409
0.114 REF
4.140 REF
4.830 REF
9.800 10.400
2.900 REF
0.055
0.024
0.067
0.039
1.400
0.600
1.700
1.000
0.026 REF
0.211 REF
0.650 REF
5.350 REF
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTD300N20J3
CYStek Product Specification
相关型号：
MTD3055E
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
MOTOROLA
MTD3055E
TRANSISTOR 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power
NSC
MTD3055E1
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
MOTOROLA
MTD3055EL
TRANSISTOR 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power
NSC
©2020 ICPDF网 联系我们和版权申明