MTDP4955Q8 [CYSTEKEC]

P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
MTDP4955Q8
型号: MTDP4955Q8
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P沟道增强型功率MOSFET

文件: 总5页 (文件大小:269K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C421Q8  
Issued Date : 2007.10.12  
Revised Date :  
CYStech Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET  
MTDP4955Q8  
Page No. : 1/5  
Description  
The MTDP4955Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best  
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.  
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications  
and suited for low voltage applications such as DC/DC converters.  
Features  
Ω
RDS(ON)=45m @VGS=-4.5V, ID=-5A  
Ω
RDS(ON)=65m @VGS=-2.5V, ID=-4A  
Simple drive requirement  
Low on-resistance  
Fast switching speed  
Pb-free package  
Applications  
Power management in notebook computer, portable equipment and battery powered systems.  
Equivalent Circuit  
Outline  
MTDP4955Q8  
SOP-8  
GGate  
SSource  
DDrain  
MTDP4955Q8  
CYStek Product Specification  
Spec. No. : C421Q8  
Issued Date : 2007.10.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/5  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
VDS  
VGS  
ID  
Limits  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
-20  
±20  
V
-5.6  
A
Continuous Drain Current @TA=25 °C (Note 1)  
Continuous Drain Current @TA=70 °C (Note 1)  
Pulsed Drain Current (Note 2)  
ID  
-4.5  
A
IDM  
Pd  
-20  
A
2
W
Total Power Dissipation (Note 1)  
Linear Derating Factor  
0.016  
-55~+150  
62.5  
W / °C  
°C  
°C/W  
Operating Junction and Storage Temperature Range  
Thermal Resistance, Junction-to-Ambient (Note 1)  
Tj, Tstg  
Rth,ja  
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad.  
2.Pulse width limited by maximum junction temperature  
Electrical Characteristics (Tj=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Static  
BVDSS  
ΔBVDSS/ΔTj  
VGS(th)  
IGSS  
-20  
-
-0.5  
-
-
-
-
-
-
-
-
V
V
V
nA  
μA  
μA  
VGS=0, ID=-250μA  
-0.01  
VGS=0, ID=-250μA  
VDS=VGS, ID=-250μA  
VGS=±20V, VDS=0  
VDS=-20V, VGS=0  
VDS=-16V, VGS=0, Tj=70  
ID=-5A, VGS=-4.5V  
ID=-4A, VGS=-2.5V  
-
-
-
-
-
-
-1.2  
±100  
-1  
-25  
45  
IDSS  
IDSS  
*RDS(ON)  
mΩ  
65  
*GFS  
-
9
-
S
VDS=-5V, ID=-5A  
Dynamic  
Ciss  
Coss  
Crss  
*td(ON)  
*tr  
*td(OFF)  
*tf  
*Qg  
-
-
-
-
-
-
-
-
-
-
1400  
270  
230  
9
10  
52  
24  
19  
3
2240  
pF  
ns  
VDS=-20V, VGS=0, f=1MHz  
VDS=-10V, ID=-1A,  
-
-
-
-
-
-
30  
-
Ω
Ω
VGS=-10V, RG=3.3 , RD=10  
VDS=-16V, ID=-5A,  
VGS=-4.5V  
nC  
*Qgs  
*Qgd  
6
-
Source-Drain Diode  
*VSD  
*Trr  
*Qrr  
-
-
-
-
32  
22  
-1.2  
-
-
V
ns  
nC  
VGS=0V, IS=-1.6A  
IS=-5A, VGS=0, dI/dt=100A/μs  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
MTDP4955Q8  
CYStek Product Specification  
Spec. No. : C421Q8  
Issued Date : 2007.10.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/5  
Characteristic Curves  
MTDP4955Q8  
CYStek Product Specification  
Spec. No. : C421Q8  
Issued Date : 2007.10.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/5  
Characteristic Curves(Cont.)  
MTDP4955Q8  
CYStek Product Specification  
Spec. No. : C421Q8  
Issued Date : 2007.10.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/5  
SOP-8 Dimension  
Right side View  
Top View  
A
Marking:  
G
I
Device Name  
4955SS  
Date Code  
□□□□  
C
B
H
J
D
Front View  
Part A  
E
K
Part A  
L
8-Lead SOP-8 Plastic Package  
CYStek Package Code: Q8  
N
M
O
F
*: Typical  
Inches  
DIM  
Millimeters  
Inches  
Millimeters  
DIM  
Min.  
Max.  
0.2007  
Min.  
Max.  
5.10  
3.95  
6.20  
1.32  
0.47  
3.88  
1.65  
5.10  
Min.  
Max.  
Min.  
Max.  
0.20  
0.70  
0.25  
0.52  
0.50  
0.13  
0.15  
A
B
C
D
E
F
0.1909  
0.1515  
0.2283  
0.0480  
0.0145  
0.1472  
0.0570  
0.1889  
4.85  
3.85  
5.80  
1.22  
0.37  
3.74  
1.45  
4.80  
I
J
0.0019  
0.0118  
0.0074  
0.0145  
0.0118  
0.0031  
0.0000  
0.0078  
0.0275  
0.0098  
0.0204  
0.0197  
0.0051  
0.0059  
0.05  
0.30  
0.19  
0.37  
0.30  
0.08  
0.00  
0.1555  
0.2441  
0.0519  
0.0185  
0.1527  
0.0649  
0.2007  
K
L
M
N
O
G
H
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: 42 Alloy; solder plating  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTDP4955Q8  
CYStek Product Specification  

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