MTE013N12RFP-0-UB-S [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;型号: | MTE013N12RFP-0-UB-S |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | N-Channel Enhancement Mode Power MOSFET |
文件: | 总8页 (文件大小:649K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE013N12RFP
BVDSS
ID@VGS=10V, TC=25°C
120V
33A
8.5A
Features
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=16A
13 mΩ(typ)
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Symbol
Outline
TO-220FP
MTE013N12RFP
G:Gate
D:Drain
S:Source
G D S
Ordering Information
Device
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Package
TO-220FP
(RoHS compliant)
MTE013N12RFP-0-UB-S
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
VGS
120
±20
33*
23.5*
8.5
6.8
132*
28
Continuous Drain Current @TC=25C, VGS=10V
Continuous Drain Current @TC=100C, VGS=10V
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
Avalanche Current
(Note 1)
(Note 1)
(Note 2)
(Note 2)
ID
IDSM
A
IDM
IAS
Single Pulse Avalanche Energy @ L=0.5mH, ID=28 Amps,
VDD=50V
Repetitive Avalanche Energy
EAS
EAR
196
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
W
3.6
36
18
2.1
1.3
TC=25C
PD
TC=100C
TA=25C
Power Dissipation
PDSM
TA=70C
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TL
300
260
C
TPKG
Operating Junction and Storage Temperature
Tj, Tstg -55~+175
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
4.2
60
Unit
C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. 100% tested by condition of VDD=50V, ID=20A, L=0.5mH, VGS=10V.
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 8
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
120
-
0.1
-
11
-
-
-
13
-
-
4.0
-
100
1
5
V
V/C
V
S
nA
VGS=0V, ID=250μA
-
2.0
-
-
-
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=5A
*GFS
IGSS
±
±
VGS= 20V, VDS=0V
VDS =96V, VGS =0V
VDS =96V, VGS =0V, Tj=55C
VGS =10V, ID=16A
IDSS
μA
-
-
Ω
m
*RDS(ON)
Dynamic
*Qg
17
-
-
-
-
-
-
-
-
-
-
-
36
14.5
7.3
24.4
10.2
40.6
10.2
2559
218
15
-
-
-
-
-
-
-
-
-
-
-
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
nC
VDD=96V, ID=32A,VGS=10V
VDD=60V, ID=16A, VGS=10V,
ns
Ω
RG=4.7
pF
VGS=0V, VDS=60V, f=1MHz
f=1MHz
Ω
0.7
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
33
A
132
1.2
-
0.87
45.2
82.7
V
ns
nC
IS=32A, VGS=0V
VGS=0V, IF=32A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
80
70
60
50
40
30
20
10
0
10V, 9V, 8V, 7V
6V
0.8
0.6
0.4
5V
4.5V
ID=250μA,
VGS=0V
VGS=4V
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
1
2
3
4
5
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
1
VGS=0V
VGS=7V
Tj=25°C
0.8
0.6
0.4
0.2
VGS=10V
10
Tj=150°C
1
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
50
40
30
20
10
0
2.4
2.0
1.6
1.2
0.8
0.4
0.0
ID=16A
VGS=10V, ID=16A
RDS(ON)@Tj=25°C : 13mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 8
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
1000
100
10
Coss
0.8
0.6
0.4
0.2
ID=250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=24V, 60V, 96V
from left to right
8
6
4
2
0
1
VDS=5V
0.1
0.01
Ta=25°C
Pulsed
ID=32A
30
0
5
10
15
20
25
35
40
0.001
0.01
0.1
1
10
100
Qg, Total Gate Charge(nC)
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
40
35
30
25
20
15
10
5
1000
RDSON
100
10
1
Limited
10μs
100μs
1ms
10ms
TC=25°C, Tj=175°C
VGS=10V, RθJC=4.2°C/W
Single Pulse
100ms
VGS=10V, RθJC=4.2°C/W
DC
0
0.1
25
50
75
100
125
150 175
200
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 8
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
20
2000
1800
1600
1400
1200
1000
800
VDS=10V
18
16
14
12
10
8
TJ(MAX)=175°C
TC=25°C
RθJC=4.2°C/W
125°C
-40°C
25°C
600
6
400
4
200
2
0
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=4.2°C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE013N12RFP
CYStek Product Specification
Spec. No. : C734FP
Issued Date : 2019.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 8
TO-220FP Dimension
Marking:
E013
N12R
Device Name
Date Code
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
Style: Pin 1.Gate 2.Drain 3.Source
*Typical
Millimeters
Inches
Millimeters
Inches
DIM
DIM
Min.
Max.
Min.
4.35
Max.
4.65
Min.
0.246
Max.
0.258
Min.
6.25
Max.
6.55
A
A1
A2
A3
b
b1
b2
c
D
E
e
F
0.171
0.183
G
H
H1
H2
J
K
L
L1
L2
M
N
0.051 REF
1.300 REF
0.138 REF
0.055 REF
0.256 0.272
3.50 REF
1.40 REF
6.50 6.90
0.112
0.102
0.020
0.031
0.124
0.110
0.030
0.041
2.85
2.60
0.50
0.80
3.15
2.80
0.75
1.05
0.031 REF
0.020
0.80 REF
0.50 REF
0.047 REF
1.20 REF
1.102
0.043
0.036
1.118
0.051
0.043
28.00
1.10
0.92
28.40
1.30
1.08
0.020
0.396
0.583
0.030
0.404
0.598
0.500
10.06
14.80
0.750
10.26
15.20
0.067 REF
0.012 REF
1.70 REF
0.30 REF
0.100 *
0.106 REF
2.54*
2.70 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE013N12RFP
CYStek Product Specification
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